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Microsemi Corporation |
N CHANNEL JFET
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,568 |
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Microsemi Corporation |
N CHANNEL JFET
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,136 |
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Microsemi Corporation |
N CHANNEL JFET
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 8V @ 500pA
- Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-72
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Package: TO-206AF, TO-72-4 Metal Can |
Stock3,328 |
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Microsemi Corporation |
N CHANNEL JFET
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 50V
- Drain to Source Voltage (Vdss): 50V
- Current - Drain (Idss) @ Vds (Vgs=0): 2.5mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 4V @ 0.5nA
- Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-72
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Package: TO-206AF, TO-72-4 Metal Can |
Stock3,840 |
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Microsemi Corporation |
N CHANNEL JFET
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
- Resistance - RDS(On): 30 Ohm
- Power - Max: 1.8W
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,776 |
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Microsemi Corporation |
N CHANNEL JFET
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock14,040 |
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Microsemi Corporation |
N CHANNEL JFET
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,656 |
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Microsemi Corporation |
JFET N-CH 40V 0.36W SMD
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 175mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 10V @ 500pA
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
- Resistance - RDS(On): 25 Ohm
- Power - Max: 360mW
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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Package: 3-SMD, No Lead |
Stock6,176 |
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Microsemi Corporation |
JFET N-CH 35V 0.3W 4SMD
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35V
- Drain to Source Voltage (Vdss): 35V
- Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 300mW
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: 4-SMD
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Package: 4-SMD, No Lead |
Stock7,040 |
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Microsemi Corporation |
JFET N-CH 40V 0.36W SMD
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
- Resistance - RDS(On): 80 Ohm
- Power - Max: 360mW
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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Package: 3-SMD, No Lead |
Stock6,588 |
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Microsemi Corporation |
JFET N-CH 40V 0.36W SMD
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
- Resistance - RDS(On): 50 Ohm
- Power - Max: 360mW
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: 4-SMD
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Package: 4-SMD, No Lead |
Stock6,400 |
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Microsemi Corporation |
JFET N-CH 40V 360MW TO-18
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
- Resistance - RDS(On): 50 Ohm
- Power - Max: 360mW
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
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Package: TO-206AA, TO-18-3 Metal Can |
Stock6,912 |
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Microsemi Corporation |
JFET N-CH 40V 360MW TO-18
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
- Resistance - RDS(On): 30 Ohm
- Power - Max: 360mW
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
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Package: TO-206AA, TO-18-3 Metal Can |
Stock5,952 |
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Microsemi Corporation |
JFET N-CH 30V 360MW TO-18
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 175mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 10V @ 500pA
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
- Resistance - RDS(On): 25 Ohm
- Power - Max: 360mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
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Package: TO-206AA, TO-18-3 Metal Can |
Stock13,542 |
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Microsemi Corporation |
INSULATED GATE BIPOLAR TRANSISTO
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 135A
- Current - Collector Pulsed (Icm): 380A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 95A
- Power - Max: 446W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 420nC
- Td (on/off) @ 25°C: 29ns/226ns
- Test Condition: 433V, 95A, 4.3 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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Package: SOT-227-4, miniBLOC |
Stock5,264 |
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Microsemi Corporation |
IGBT 600V 150A 625W TO264
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 150A
- Current - Collector Pulsed (Icm): 190A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
- Power - Max: 625W
- Switching Energy: 456µJ (on), 635µJ (off)
- Input Type: Standard
- Gate Charge: 165nC
- Td (on/off) @ 25°C: 19ns/85ns
- Test Condition: 400V, 50A, 4.3 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264
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Package: TO-264-3, TO-264AA |
Stock6,432 |
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Microsemi Corporation |
IGBT 600V 54A 250W TO220
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 54A
- Current - Collector Pulsed (Icm): 113A
- Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
- Power - Max: 250W
- Switching Energy: 570µJ (off)
- Input Type: Standard
- Gate Charge: 145nC
- Td (on/off) @ 25°C: 16ns/360ns
- Test Condition: 400V, 30A, 9.1 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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Package: TO-220-3 |
Stock3,248 |
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Microsemi Corporation |
IGBT 600V 78A 337W TO247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 78A
- Current - Collector Pulsed (Icm): 130A
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 26A
- Power - Max: 337W
- Switching Energy: 409µJ (on), 450µJ (off)
- Input Type: Standard
- Gate Charge: 128nC
- Td (on/off) @ 25°C: 16ns/102ns
- Test Condition: 400V, 26A, 4.7 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 [B]
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Package: TO-247-3 |
Stock587,100 |
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Microsemi Corporation |
IGBT 600V 183A 780W TO247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 183A
- Current - Collector Pulsed (Icm): 307A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
- Power - Max: 780W
- Switching Energy: 1.354mJ (on), 1.614mJ (off)
- Input Type: Standard
- Gate Charge: 294nC
- Td (on/off) @ 25°C: 28ns/212ns
- Test Condition: 400V, 62A, 4.7 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: -
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Package: TO-247-3 Variant |
Stock4,640 |
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Microsemi Corporation |
IGBT 600V 155A 536W TO264
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 155A
- Current - Collector Pulsed (Icm): 225A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
- Power - Max: 536W
- Switching Energy: 2500µJ (on), 2140µJ (off)
- Input Type: Standard
- Gate Charge: 485nC
- Td (on/off) @ 25°C: 47ns/385ns
- Test Condition: 400V, 75A, 1 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: -
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Package: TO-264-3, TO-264AA |
Stock2,992 |
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Microsemi Corporation |
IGBT 1200V 64A 357W TO264
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 64A
- Current - Collector Pulsed (Icm): 75A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
- Power - Max: 357W
- Switching Energy: 1.315mJ (on), 1.515mJ (off)
- Input Type: Standard
- Gate Charge: 170nC
- Td (on/off) @ 25°C: 14ns/185ns
- Test Condition: 800V, 25A, 4.3 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264 [L]
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Package: TO-264-3, TO-264AA |
Stock7,888 |
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Microsemi Corporation |
IGBT 600V 64A 250W TO220
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 64A
- Current - Collector Pulsed (Icm): 110A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Power - Max: 250W
- Switching Energy: 525µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 145nC
- Td (on/off) @ 25°C: 12ns/225ns
- Test Condition: 400V, 30A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220 [K]
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Package: TO-220-3 |
Stock7,408 |
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Microsemi Corporation |
IGBT 1200V 32A 200W TO247
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 32A
- Current - Collector Pulsed (Icm): 64A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
- Power - Max: 200W
- Switching Energy: 2.7mJ
- Input Type: Standard
- Gate Charge: 95nC
- Td (on/off) @ 25°C: 17ns/105ns
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 [B]
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Package: TO-247-3 |
Stock14,568 |
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Microsemi Corporation |
IGBT 1200V 36A 200W TO247
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 36A
- Current - Collector Pulsed (Icm): 64A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
- Power - Max: 200W
- Switching Energy: 895µJ (on), 840µJ (off)
- Input Type: Standard
- Gate Charge: 100nC
- Td (on/off) @ 25°C: 10ns/120ns
- Test Condition: 800V, 15A, 4.3 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 [B]
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Package: TO-247-3 |
Stock2,016 |
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Microsemi Corporation |
IGBT 600V 42A 184W TO220
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 42A
- Current - Collector Pulsed (Icm): 45A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
- Power - Max: 184W
- Switching Energy: 150µJ (on), 215µJ (off)
- Input Type: Standard
- Gate Charge: 75nC
- Td (on/off) @ 25°C: 6ns/105ns
- Test Condition: 400V, 15A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220 [K]
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Package: TO-220-3 |
Stock4,976 |
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Microsemi Corporation |
IGBT 900V 43A 250W TO220
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 900V
- Current - Collector (Ic) (Max): 43A
- Current - Collector Pulsed (Icm): 60A
- Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A
- Power - Max: 250W
- Switching Energy: 200µJ (off)
- Input Type: Standard
- Gate Charge: 60nC
- Td (on/off) @ 25°C: 9ns/33ns
- Test Condition: 600V, 15A, 4.3 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220 [K]
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Package: TO-220-3 |
Stock2,016 |
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Microsemi Corporation |
IGBT 600V 56A 250W TO220
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 56A
- Current - Collector Pulsed (Icm): 65A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
- Power - Max: 250W
- Switching Energy: 130µJ (on), 121µJ (off)
- Input Type: Standard
- Gate Charge: 55nC
- Td (on/off) @ 25°C: 8ns/29ns
- Test Condition: 400V, 15A, 5 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220 [K]
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Package: TO-220-3 |
Stock2,592 |
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Microsemi Corporation |
IGBT 1200V 45A 195W TO220
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 45A
- Current - Collector Pulsed (Icm): 45A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Power - Max: 195W
- Switching Energy: 410µJ (on), 950µJ (off)
- Input Type: Standard
- Gate Charge: 90nC
- Td (on/off) @ 25°C: 10ns/150ns
- Test Condition: 800V, 15A, 4.3 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220 [K]
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Package: TO-220-3 |
Stock5,920 |
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Microsemi Corporation |
IGBT 1200V 41A 250W TO220
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 41A
- Current - Collector Pulsed (Icm): 50A
- Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A
- Power - Max: 250W
- Switching Energy: 114µJ (on), 165µJ (off)
- Input Type: Standard
- Gate Charge: 55nC
- Td (on/off) @ 25°C: 9ns/28ns
- Test Condition: 600V, 13A, 5 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220 [K]
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Package: TO-220-3 |
Stock3,264 |
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Microsemi Corporation |
IGBT 1200V 25A 156W TO220
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 25A
- Current - Collector Pulsed (Icm): 44A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
- Power - Max: 156W
- Switching Energy: 300µJ (on), 285µJ (off)
- Input Type: Standard
- Gate Charge: 65nC
- Td (on/off) @ 25°C: 7ns/100ns
- Test Condition: 800V, 8A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220 [K]
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Package: TO-220-3 |
Stock7,856 |
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