ON Semiconductor Products - Transistors - Programmable Unijunction | Heisener Electronics
Contact Us
SalesDept@heisener.com +86-755-83210559 ext. 813
Language Translation

* Please refer to the English Version as our Official Version.

ON Semiconductor Products - Transistors - Programmable Unijunction

Records 11
Page  1/1
Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
Power Dissipation (Max)
Voltage - Output
Voltage - Offset (Vt)
Current - Gate to Anode Leakage (Igao)
Current - Valley (Iv)
Current - Peak
Package / Case
hot 2N6028RLRPG
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock5,072
300mW
11V
600mV
10nA
25µA
150nA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6028RLRMG
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock4,544
300mW
11V
600mV
10nA
25µA
150nA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot 2N6027RL1G
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock26,400
300mW
11V
1.6V
10nA
50µA
2µA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6028RLRP
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock7,568
300mW
11V
600mV
10nA
25µA
150nA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot 2N6028G
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Package: TO-226-3, TO-92-3 (TO-226AA)
Stock6,972
300mW
11V
600mV
10nA
25µA
150nA
TO-226-3, TO-92-3 (TO-226AA)
2N6027RL1
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock5,120
300mW
11V
1.6V
10nA
50µA
2µA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot 2N6027G
ON Semiconductor

TRANS PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Package: TO-226-3, TO-92-3 (TO-226AA)
Stock229,920
300mW
11V
1.6V
10nA
50µA
2µA
TO-226-3, TO-92-3 (TO-226AA)
2N6028RLRAG
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock5,840
300mW
11V
600mV
10nA
25µA
150nA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot 2N6027RLRAG
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock20,856
300mW
11V
1.6V
10nA
50µA
2µA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6028RLRA
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock3,440
300mW
11V
600mV
10nA
25µA
150nA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot 2N6027RLRA
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock60,000
300mW
11V
1.6V
10nA
50µA
2µA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)