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Vishay Siliconix |
MOSFET N-CH 40V .1NA TO-18
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
- Resistance - RDS(On): 100 Ohm
- Power - Max: 1.8W
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
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Package: TO-206AA, TO-18-3 Metal Can |
Stock4,896 |
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Vishay Siliconix |
MOSFET N-CH 30V 32A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7765pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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Package: PowerPAK? SO-8 |
Stock36,000 |
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Vishay Siliconix |
MOSFET N-CH 100V 60A POLARPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 14.2 mOhm @ 13.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 10-PolarPAK? (L)
- Package / Case: 10-PolarPAK? (L)
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Package: 10-PolarPAK? (L) |
Stock7,488 |
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Vishay Siliconix |
MOSFET N-CH 30V 8.5A PPAK 1212-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 13.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
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Package: PowerPAK? 1212-8 |
Stock854,196 |
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Vishay Siliconix |
MOSFET N-CH 30V 2.7A SOT363
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6 (SOT-363)
- Package / Case: 6-TSSOP, SC-88, SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock144,000 |
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Vishay Siliconix |
MOSFET P-CH 8V 12A SC70-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 4V
- Vgs (Max): ±5V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-70-6 Single
- Package / Case: PowerPAK? SC-70-6
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Package: PowerPAK? SC-70-6 |
Stock892,116 |
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Vishay Siliconix |
MOSFET P-CH 20V 12A PPAK CHIPFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 17.8W (Tc)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? ChipFet Single
- Package / Case: PowerPAK? ChipFET? Single
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Package: PowerPAK? ChipFET? Single |
Stock4,656 |
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Vishay Siliconix |
MOSFET N-CH 100V 5.6A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
- Rds On (Max) @ Id, Vgs: 540 mOhm @ 3.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,792 |
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Vishay Siliconix |
MOSFET N-CH 150V 100A TO247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock2,128 |
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Vishay Siliconix |
MOSFET N-CH 600V 9A D-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 778pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Rds On (Max) @ Id, Vgs: 368 mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252AA)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,616 |
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Vishay Siliconix |
MOSFET P-CH 60V 18A TO-220AB
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock61,908 |
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Vishay Siliconix |
MOSFET N-CH 150V 53.7A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1286pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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Package: PowerPAK? SO-8 |
Stock18,864 |
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Vishay Siliconix |
MOSFET P-CH 40V 18A 1212-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 9.3A, 10V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
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Package: PowerPAK? 1212-8 |
Stock3,952 |
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Vishay Siliconix |
MOSFET P-CH 60V 190MA SC-75A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250mW (Ta)
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-75A
- Package / Case: SC-75A
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Package: SC-75A |
Stock332,280 |
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Vishay Siliconix |
MOSFET P-CH 20V 11A MICROFOOT
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.7V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-Micro Foot?
- Package / Case: 6-MICRO FOOT?
|
Package: 6-MICRO FOOT? |
Stock6,736 |
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Vishay Siliconix |
MOSFET N-CH 40V 20.7A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 7.1W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,936 |
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Vishay Siliconix |
MOSFET P-CH 40V 50A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3590pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 136W (Tc)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,720 |
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Vishay Siliconix |
MOSFET N-CH 20V 14A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock115,524 |
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Vishay Siliconix |
MOSFET N-CH 20V 7.8A SC70-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 13.6W (Tc)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 4.5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-70-6 Single
- Package / Case: PowerPAK? SC-70-6
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Package: PowerPAK? SC-70-6 |
Stock6,176 |
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Vishay Siliconix |
MOSFET N-CH 60V 6A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock14,820 |
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Vishay Siliconix |
MOSFET P-CH 20V 6A SOT-23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 835pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,285,128 |
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Vishay Siliconix |
MOSFET N-CH 40V 30A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
- Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock65,976 |
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Vishay Siliconix |
MOSFET 2P-CH 30V 7A PPAK SO-8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
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Package: PowerPAK? SO-8 Dual |
Stock45,480 |
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Vishay Siliconix |
MOSFET 2N-CH 20V 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock618,240 |
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Vishay Siliconix |
IC REG DL BCK/LNR SYNC 32MLPQ
- Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
- Function: Any Function
- Number of Outputs: 2
- Frequency - Switching: 200kHz ~ 1MHz
- Voltage/Current - Output 1: 0.6 V ~ 5.5 V, 15A
- Voltage/Current - Output 2: Adj to 0.75V, 200mA
- Voltage/Current - Output 3: -
- w/LED Driver: No
- w/Supervisor: No
- w/Sequencer: No
- Voltage - Supply: 3 V ~ 17 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 32-PowerWFQFN
- Supplier Device Package: PowerPAK? MLP55-32
|
Package: 32-PowerWFQFN |
Stock7,120 |
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Vishay Siliconix |
IC MOSFET DRIVER N-CH 40MLP
- Output Configuration: Half Bridge
- Applications: Synchronous Buck Converters
- Interface: PWM
- Load Type: Inductive
- Technology: DrMOS
- Rds On (Typ): -
- Current - Output / Channel: 40A
- Current - Peak Output: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Voltage - Load: 4.5 V ~ 24 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: Bootstrap Circuit, Diode Emulation, Status Flag
- Fault Protection: Over Temperature, Shoot-Through, UVLO
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? MLP66-40
- Supplier Device Package: PowerPAK? MLP66-40
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Package: PowerPAK? MLP66-40 |
Stock5,680 |
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Vishay Siliconix |
IC SWITCH DUAL SPST 8SOIC
- Switch Circuit: SPST - NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 2
- On-State Resistance (Max): 60 Ohm
- Channel-to-Channel Matching (ΔRon): 400 mOhm
- Voltage - Supply, Single (V+): 2.7 V ~ 12 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 75ns, 50ns
- -3db Bandwidth: -
- Charge Injection: 2pC
- Channel Capacitance (CS(off), CD(off)): 7pF
- Current - Leakage (IS(off)) (Max): 100pA
- Crosstalk: -90dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,872 |
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Vishay Siliconix |
IC SWITCH 2 X SPST 8 OHM SOT23-8
- Switch Circuit: SPST - NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 2
- On-State Resistance (Max): 800 mOhm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): 1.5 V ~ 3.6 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 30ns, 28ns
- -3db Bandwidth: -
- Charge Injection: 5.8pC
- Channel Capacitance (CS(off), CD(off)): 81pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -89dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: SOT-23-8
- Supplier Device Package: SOT-23-8
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Package: SOT-23-8 |
Stock3,392 |
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Vishay Siliconix |
IC SWITCH QUAD SPST 16DIP
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 80 Ohm
- Channel-to-Channel Matching (ΔRon): 2 Ohm
- Voltage - Supply, Single (V+): 12V
- Voltage - Supply, Dual (V±): ±15V
- Switch Time (Ton, Toff) (Max): 220ns, 120ns
- -3db Bandwidth: -
- Charge Injection: -1pC
- Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -95dB @ 100kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-DIP
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Package: 16-DIP (0.300", 7.62mm) |
Stock3,520 |
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Vishay Siliconix |
IC ANALOG SWITCH CMOS 8SOIC
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 1
- On-State Resistance (Max): 20 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): 2.7 V ~ 12 V
- Voltage - Supply, Dual (V±): ±3 V ~ 6 V
- Switch Time (Ton, Toff) (Max): 43ns, 31ns
- -3db Bandwidth: -
- Charge Injection: 1pC
- Channel Capacitance (CS(off), CD(off)): 5pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -71dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,512 |
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