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Vishay Siliconix |
MOSFET N-CH 20V 13A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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Package: PowerPAK? SO-8 |
Stock13,176 |
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Vishay Siliconix |
MOSFET N-CH 250V 790MA SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 790mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 470mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock5,824 |
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Vishay Siliconix |
MOSFET P-CH 60V 6.7A TO-262
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7,472 |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock137,112 |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1036pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock419,052 |
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Vishay Siliconix |
MOSFET N-CH 250V 14A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 280 mOhm @ 8.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,680 |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 43A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock17,712 |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2038pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 8.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock7,408 |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1018pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock68,580 |
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Vishay Siliconix |
MOSFET P-CH 200V 4.3A TO220FP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock855,180 |
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Vishay Siliconix |
MOSFET P-CH 60V 5.1A I-PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251AA
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock180,984 |
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Vishay Siliconix |
MOSFET N-CH 200V 9.9A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 5.9A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock14,814 |
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Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock84,000 |
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Vishay Siliconix |
MOSFET N-CH 30V 17A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,110,052 |
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Vishay Siliconix |
MOSFET 2P-CH 20V 1.6A 6-TSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.6A
- Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.9A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 800mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock1,401,540 |
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Vishay Siliconix |
MOSFET 2N-CH 25V 8A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 13V
- Power - Max: 2.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,520 |
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Vishay Siliconix |
IC REG LINEAR 4.5V 150MA TSC75-6
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 6V
- Voltage - Output (Min/Fixed): 4.5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.22V @ 150mA
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 85µA
- PSRR: 75dB ~ 40dB (1kHz ~ 100kHz)
- Control Features: Enable
- Protection Features: Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? TSC-75-6
- Supplier Device Package: PowerPAK? TSC75-6
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Package: PowerPAK? TSC-75-6 |
Stock3,776 |
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Vishay Siliconix |
LOAD SWITCH 4WCSP
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 1.2 V ~ 5.5 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 1.2A
- Rds On (Typ): 50 mOhm
- Input Type: Non-Inverting
- Features: Slew Rate Controlled
- Fault Protection: Reverse Current
- Operating Temperature: -40°C ~ 125°C (TJ)
- Package / Case: 4-UFBGA, WLCSP
- Supplier Device Package: 4-WLCSP (0.76x0.76)
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Package: 4-UFBGA, WLCSP |
Stock7,312 |
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Vishay Siliconix |
IC SW W/CTRL SLEW RATE WCSP
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 1.2 V ~ 5.5 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 1.2A
- Rds On (Typ): 50 mOhm
- Input Type: Non-Inverting
- Features: Load Discharge, Slew Rate Controlled
- Fault Protection: Reverse Current
- Operating Temperature: -40°C ~ 125°C (TJ)
- Package / Case: 4-UFBGA, CSPBGA
- Supplier Device Package: 4-WCSP (0.79x0.79)
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Package: 4-UFBGA, CSPBGA |
Stock5,232 |
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Vishay Siliconix |
IC SWITCH QUAD SPST 16TSSOP
- Switch Circuit: SPST - NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 85 Ohm
- Channel-to-Channel Matching (ΔRon): 1.7 Ohm
- Voltage - Supply, Single (V+): 4 V ~ 44 V
- Voltage - Supply, Dual (V±): ±4 V ~ 22 V
- Switch Time (Ton, Toff) (Max): 200ns, 150ns
- -3db Bandwidth: -
- Charge Injection: 1pC
- Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -95dB @ 100kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
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Package: 16-TSSOP (0.173", 4.40mm Width) |
Stock12,756 |
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Vishay Siliconix |
IC ANALOG SWITCH SPDT LV 6TSOP
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 1
- On-State Resistance (Max): 30 Ohm
- Channel-to-Channel Matching (ΔRon): 400 mOhm
- Voltage - Supply, Single (V+): 2.7 V ~ 5 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 75ns, 50ns
- -3db Bandwidth: -
- Charge Injection: 2pC
- Channel Capacitance (CS(off), CD(off)): 7pF
- Current - Leakage (IS(off)) (Max): 100pA
- Crosstalk: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock219,228 |
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Vishay Siliconix |
IC SWITCH 2XSPDT 500MOHM MINIQFN
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 2
- On-State Resistance (Max): 500 mOhm
- Channel-to-Channel Matching (ΔRon): 60 mOhm
- Voltage - Supply, Single (V+): 1.65 V ~ 4.3 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 78ns, 58ns
- -3db Bandwidth: 50MHz
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): 55pF
- Current - Leakage (IS(off)) (Max): 2nA
- Crosstalk: -70dB @ 100kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 10-UFQFN
- Supplier Device Package: 10-miniQFN (1.4x1.8)
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Package: 10-UFQFN |
Stock2,656 |
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Vishay Siliconix |
IC SWITCH QUAD SPST 16-SOIC
- Switch Circuit: SPST - NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 45 Ohm
- Channel-to-Channel Matching (ΔRon): 2 Ohm
- Voltage - Supply, Single (V+): 10 V ~ 18 V
- Voltage - Supply, Dual (V±): ±10 V ~ 15 V
- Switch Time (Ton, Toff) (Max): 35ns, 25ns
- -3db Bandwidth: 500MHz
- Charge Injection: 4pC
- Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
- Current - Leakage (IS(off)) (Max): 250pA
- Crosstalk: -87dB @ 5MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
|
Package: 16-SOIC (0.154", 3.90mm Width) |
Stock6,352 |
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Vishay Siliconix |
IC SWITCH DUAL SPDT 10MICRO
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 2
- On-State Resistance (Max): 400 mOhm
- Channel-to-Channel Matching (ΔRon): 50 mOhm (Max)
- Voltage - Supply, Single (V+): 2.7 V ~ 3.3 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 82ns, 73ns
- -3db Bandwidth: -
- Charge Injection: 21pC
- Channel Capacitance (CS(off), CD(off)): 145pF
- Current - Leakage (IS(off)) (Max): 2nA
- Crosstalk: -69dB @ 100kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 10-WFBGA
- Supplier Device Package: 10-Micro Foot? (4x3)
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Package: 10-WFBGA |
Stock3,072 |
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Vishay Siliconix |
IC SWITCH DUAL SPDT 8MICRO
- Switch Circuit: SPST - NO/NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 2
- On-State Resistance (Max): 3.5 Ohm
- Channel-to-Channel Matching (ΔRon): 200 mOhm (Max)
- Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 41ns, 37ns
- -3db Bandwidth: 360MHz
- Charge Injection: 1pC
- Channel Capacitance (CS(off), CD(off)): 8pF
- Current - Leakage (IS(off)) (Max): 2nA
- Crosstalk: -66dB @ 10MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 8-WFBGA
- Supplier Device Package: 8-MicroFoot?
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Package: 8-WFBGA |
Stock4,512 |
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Vishay Siliconix |
IC SWITCH QUAD CMOS 16TSSOP
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 85 Ohm
- Channel-to-Channel Matching (ΔRon): 2 Ohm
- Voltage - Supply, Single (V+): 4.5 V ~ 25 V
- Voltage - Supply, Dual (V±): ±4.5 V ~ 22 V
- Switch Time (Ton, Toff) (Max): 300ns, 200ns
- -3db Bandwidth: -
- Charge Injection: 1pC
- Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -95dB @ 100kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
|
Package: 16-TSSOP (0.173", 4.40mm Width) |
Stock2,832 |
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Vishay Siliconix |
IC ANALOG SWITCH CMOS 8DIP
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 1
- On-State Resistance (Max): 35 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): 12V
- Voltage - Supply, Dual (V±): ±15V
- Switch Time (Ton, Toff) (Max): 175ns, 145ns
- -3db Bandwidth: -
- Charge Injection: 60pC
- Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
- Current - Leakage (IS(off)) (Max): 250pA
- Crosstalk: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock17,304 |
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Vishay Siliconix |
IC SWITCH QUAD SPST 16DIP
- Switch Circuit: SPST - NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 85 Ohm
- Channel-to-Channel Matching (ΔRon): 2 Ohm
- Voltage - Supply, Single (V+): 4.5 V ~ 25 V
- Voltage - Supply, Dual (V±): ±4.5 V ~ 22 V
- Switch Time (Ton, Toff) (Max): 300ns, 200ns
- -3db Bandwidth: -
- Charge Injection: 1pC
- Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -95dB @ 100kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-DIP
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Package: 16-DIP (0.300", 7.62mm) |
Stock16,380 |
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Vishay Siliconix |
IC ANALOG SWITCH 6-TSOP
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 2
- On-State Resistance (Max): 3.2 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): 3 V ~ 16 V
- Voltage - Supply, Dual (V±): ±3 V ~ 8 V
- Switch Time (Ton, Toff) (Max): 36ns, 22ns
- -3db Bandwidth: 161MHz
- Charge Injection: 19pC
- Channel Capacitance (CS(off), CD(off)): 34pF, 36pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -
- Operating Temperature: -40°C ~ 85°C
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock6,144 |
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Vishay Siliconix |
INTEGRATED POWER STAGE POWERPAK
- Output Configuration: Half Bridge (2)
- Applications: Synchronous Buck Converters
- Interface: PWM
- Load Type: Inductive, Capacitive
- Technology: Power MOSFET
- Rds On (Typ): -
- Current - Output / Channel: 50A
- Current - Peak Output: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Voltage - Load: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Features: Bootstrap Circuit, Diode Emulation, Status Flag
- Fault Protection: Shoot-Through, UVLO
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® MLP55-31L
- Supplier Device Package: PowerPAK® MLP55-31L
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Package: PowerPAK® MLP55-31L |
Stock6,960 |
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