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Diodes Incorporated - Bipolar transistors enable higher power density

Technology Cover
Post Date: 2019-04-04, Diodes Incorporated
Diodes Incorporated series of NPN and PNP power bipolar transistors are available in small size (3.3mm x 3.3mm), providing higher power density for applications requiring up to 100V and 3A. These NPN and PNP transistors are smaller in size and can provide higher power density designs in gate drive power MOSFETs and IGBTs, PNP LDOs, linear DC-DC buck regulators and load switching circuits. The DXTN07xxxxFG (NPN) and DXTP07xxxxFG (PNP) series are targeted at the industrial and consumer markets, and their VCEO series ranges from 25V to 100V. They also highlight the total power consumption of 2W and are rated up to + 175C. These transistors are packaged in a compact PowerDI3333 surface-mount package with a size of only 3.3mm x 3.3mm x 0.8mm, occupying 70% of PCB space than traditional SOT223, while generating similar power consumption in a more thermally efficient package. The package has wettable sides to increase PCB productivity, which helps increase the high-speed AOI of solder joints, eliminating the need for X-ray inspection.

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