ON Semiconductor - Robust and cost-effective Trench technology insulated gate bipolar transistors (NGTB75N60SWG) | Heisener Electronics
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ON Semiconductor - Robust and cost-effective Trench technology insulated gate bipolar transistors (NGTB75N60SWG)

Technology Cover
Post Date: 2015-11-24, ON Semiconductor
ON Semiconductor's NGTB 25-75A Insulated Gate Bipolar Transistor (IGBT) has a robust and cost-effective Trench structure. This device provides excellent performance in demanding switching applications while providing low on-voltage and minimal switching losses. They are particularly suitable for welding applications. Integrated in the device is a soft fast co-packaged freewheeling diode with low forward voltage.