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ROHM - New SiC MOSFETs offer lower switching loss over conventional packages

Technology Cover
Post Date: 2019-10-27, Rohm Semiconductor
ROHM provides six new types of trench gate structure SiC MOSFETs (650V / 1200V) of the SCT3xxx xR series, which are very suitable for server power supplies, solar inverters, UPS systems and EV charging stations that require high efficiency. This series uses a four-pin package (TO-247-4L) to maximize switching performance and reduce switching losses by up to 35% compared to traditional three-pin packages. This increases power consumption in various applications. The company also provides solutions that facilitate application evaluation, including the SiC MOSFET evaluation board P02SCT3040KR-EVK-001, which is equipped with a gate driver IC (BM6101FV-C), multiple power ICs, and discrete optimized for SiC device driving. element.

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