ROHM - New ultra-low IR Schottky barrier diodes optimised for automotive applications | Heisener Electronics
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ROHM - New ultra-low IR Schottky barrier diodes optimised for automotive applications

Technology Cover
Post Date: 2019-12-09, Rohm Semiconductor
In ROHM now offers 200V ultra-low IR Schottky barrier diodes optimized for automotive applications that combine powertrain and xEV. The RBxx8BM / NS200 adds the SBD's RBxx8 series, which allows high-temperature operation, which has been confirmed in the Japanese automotive market. This new series has ultra-low leakage current characteristics and can provide a high withstand voltage of 200V. The company's new SBD replaces the fast recovery diodes and rectifier diodes typically used in vehicle systems, enabling it to significantly enhance forward voltage characteristics (11% lower than traditional FRD). This can reduce application power consumption and achieve smaller package designs by reducing heat generation, thereby saving more space. The company has been offering an ultra-low IR SBD series that can withstand voltages up to 150V and is compatible with high temperature automotive conditions. The latest series adds 200V models to meet new car needs. The device is targeted at automotive applications (such as xEV), such as powertrains, industrial inverters, and various types of power supplies.

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