The latest LPDDR4X offers high performance and energy efficiency, while significantly increasing the heat resistance level of automotive applications that typically require working in extreme environments.
The 10nm class DRAM will also allow the industry's fastest automotive DRAM-based LPDDR4X interface to reach the highest density.
"16Gb LPDDR4X DRAM is our most advanced automotive solution that provides global automotive manufacturers with outstanding reliability, durability, speed, capacity and energy efficiency," said Sewon Chun, senior vice president of Samsung's memory market.
Samsung's 16Gb LPDDR4X exceeds 20nm "automotive grade 2" DRAM and can withstand temperatures from -40°C to 105°C, meets automotive-level standards, and raises the high-end threshold to 125°C. By meeting the stringent internal thermal cycling tests of global automotive manufacturers, 16Gb LPDDR4X enhances the reliability of a wide range of automotive applications in many of the world's most challenging environments.
In addition to high temperature reliability, advanced 10nm node production is critical to providing leading performance and power efficiency for 16Gb LPDDR4X. Even at temperatures up to 125°C, data processing speeds reach 4 266 megabits per second (Mbps), a 14% increase over 8Gb LPDDR4 DRAMs based on 20nm process technology, and new memory power efficiency is increased by 30%. .
With the launch of the 256GB embedded universal flash memory (eUFS) driver announced in February, Samsung has expanded its advanced memory solution family to accommodate future automotive applications, using 10nm-class 16Gb LPDDR4X DRAM, with 12Gb and 16Gb on the market, 24Gb and 32Gb capacity. While expanding its 10nm-class DRAM products, the company also plans to strengthen its technical partnerships for automotive solutions, including visual ADAS (advanced driver assistance systems), autonomous driving, infotainment systems and gateways.