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The new power MOSFETs provide low resistance, increasing efficiency and power density

Post Date: 2018-01-29

Summary

The new power MOSFETs provide low resistance, increasing efficiency and power density

Product Image

Recently, Vishay Intertechnology represented a new power MOSFET transistor IV Generation n-channel 25V, claiming that he has a Vishay Siliconix SiRA20DP with 0.58 milliohms to 10V The lowest resistance industrial input offers a wide range of applications Higher power density and efficiency Depending on the resistance The device's utility index (FOM) strength of less than 0.6 mΩ provides a minimum load on the gate and shutter loads.

The PowerPAK SO-8, 6mmx5mm size unit of the housing is considered to have one of the world's two 25V MOS transistors with a maximum firing resistance of less than 0.6 milliohms. In contrast, SiRA20DP offers a typical lower input load of 61 nK and a lower 32% FOM of 0.035 ohm * nC. The connection resistance of all other MOS transistors of channel n 25 V is 11% or more.

The low resistance of the SiRA20DP minimizes power dissipation, increasing system efficiency and providing higher power density, making it ideal for use in redundant power architectures or functions. The low FOM MOSFET improves DC-DC conversion power and communications servers, memory battery switching systems and from 5V to 12V. Switching load and input voltage rail switching characteristics

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