Page 6 - Cree/Wolfspeed Products | Heisener Electronics

Part Number	Manufacturer	Description	Package	Stock
CPMF-1200-S080B	Cree/Wolfspeed	MOSFET N-CH SICFET 1200V 50A DIE FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90.8nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1915pF @ 800V Vgs (Max): +25V, -5V FET Feature: - Power Dissipation (Max): 313mW (Tj) Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: Die	Stock5,232
C2M0080120D	Cree/Wolfspeed	MOSFET N-CH 1200V 31.6A TO247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,104
C3M0120090J-TR	Cree/Wolfspeed	MOSFET N-CH 900V 22A FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V Vgs (Max): +18V, -8V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Stock6,736
C3M0065090J	Cree/Wolfspeed	MOSFET N-CH 900V 35A D2PAK-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 2.1V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V Vgs (Max): +19V, -8V FET Feature: - Power Dissipation (Max): 113W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Stock62,232
CGHV27100F	Cree/Wolfspeed	FET RF 50V 2.7GHZ 440162 Transistor Type: HEMT Frequency: 2.5GHz ~ 2.7GHz Gain: 18dB Voltage - Test: 50V Current Rating: 6A Noise Figure: - Current - Test: 500mA Power - Output: 100W Voltage - Rated: 50V Package / Case: 440162 Supplier Device Package: 440162	Package: 440162	Stock7,968
CGHV35150F	Cree/Wolfspeed	FET RF 125V 3.5GHZ 440193 Transistor Type: HEMT Frequency: 2.9GHz ~ 3.5GHz Gain: 13.3dB Voltage - Test: 50V Current Rating: 12A Noise Figure: - Current - Test: 500mA Power - Output: 170W Voltage - Rated: 125V Package / Case: 440193 Supplier Device Package: 440193	Package: 440193	Stock5,312
CGHV60040D	Cree/Wolfspeed	RF MOSFET HEMT 50V DIE Transistor Type: HEMT Frequency: 6GHz Gain: 17dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 65mA Power - Output: 40W Voltage - Rated: 150V Package / Case: Die Supplier Device Package: Die	Package: Die	Stock8,208
CGHV31500F	Cree/Wolfspeed	FET RF 125V 24A 440217 Transistor Type: HEMT Frequency: 2.7GHz ~ 3.1GHz Gain: 13.5dB Voltage - Test: 50V Current Rating: 24A Noise Figure: - Current - Test: 500mA Power - Output: 500W Voltage - Rated: 125V Package / Case: 440217 Supplier Device Package: 440217	Package: 440217	Stock5,904
CGHV35400F	Cree/Wolfspeed	FET RF 125V 3.5GHZ 440210 Transistor Type: HEMT Frequency: 2.9GHz ~ 3.5GHz Gain: 11dB Voltage - Test: 45V Current Rating: 24A Noise Figure: - Current - Test: 500mA Power - Output: 455W Voltage - Rated: 125V Package / Case: 440210 Supplier Device Package: 440210	Package: 440210	Stock7,520
CGH40090PP	Cree/Wolfspeed	FET RF 84V 4GHZ 440199 Transistor Type: HEMT Frequency: 0Hz ~ 4GHz Gain: 12.5dB Voltage - Test: 28V Current Rating: 28A Noise Figure: - Current - Test: 1A Power - Output: 100W Voltage - Rated: 84V Package / Case: 440199 Supplier Device Package: 440199	Package: 440199	Stock6,276
CGH80030D-GP4	Cree/Wolfspeed	RF MOSFET HEMT 28V DIE Transistor Type: HEMT Frequency: 8GHz Gain: 16.5dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 200mA Power - Output: 30W Voltage - Rated: 84V Package / Case: Die Supplier Device Package: Die	Package: Die	Stock6,816
CGH40006P	Cree/Wolfspeed	FET RF 84V 6GHZ 440109 Transistor Type: HEMT Frequency: 0Hz ~ 6GHz Gain: 13dB Voltage - Test: 28V Current Rating: 3.5A Noise Figure: - Current - Test: 100mA Power - Output: 8W Voltage - Rated: 84V Package / Case: 440109 Supplier Device Package: 440109	Package: 440109	Stock9,324
CAS300M12BM2	Cree/Wolfspeed	MOSFET 2N-CH 1200V 404A MODULE FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 404A Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 300A, 20V Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 11700pF @ 600V Power - Max: 1660W Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module, Screw Terminals Supplier Device Package: Module	Package: Module, Screw Terminals	Stock5,248
CSD10060A	Cree/Wolfspeed	DIODE SCHOTTKY 600V 16.5A TO220 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 16.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 550pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2	Stock10,092
CPW3-1700-S025B-WP	Cree/Wolfspeed	DIODE SILICON 1.7KV 25A CHIP Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 2V @ 25A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 1700V Capacitance @ Vr, F: 2250pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 175°C	Package: Die	Stock5,664
C3D04060E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 600V 15.5A TO252 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 251pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock10,356
C3D03060E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 600V 11.5A TO252 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 11.5A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 155pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock102,312
C3D02060A	Cree/Wolfspeed	DIODE SCHOTTKY 600V 2A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 120pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2	Stock3,952
C3D08060G	Cree/Wolfspeed	DIODE SCHOTTKY 600V 8A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 441pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock14,772
C3D08060A	Cree/Wolfspeed	DIODE SCHOTTKY 600V 8A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 441pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2	Stock34,488
C4D02120A	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 2A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: 167pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2	Stock24,792
CSD01060E	Cree/Wolfspeed	DIODE SCHOTTKY 600V 1A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: 80pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock109,674
C4D30120D	Cree/Wolfspeed	DIODE ARRAY SCHOTTKY 1200V 21.5A Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 21.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 1200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: TO-247-3	Stock3,712
C3D20060D	Cree/Wolfspeed	DIODE ARRAY SCHOTTKY 600V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: TO-247-3	Stock4,592
CGHV27060MP-AMP1	Cree/Wolfspeed	EVAL BOARD FOR CGHV27060 Type: HEMT Frequency: 0Hz ~ 2.7GHz For Use With/Related Products: CGHV27060 Supplied Contents: Board	Package: -	Stock4,950
CGH40035F-TB	Cree/Wolfspeed	BOARD DEMO AMP CIRCUIT CGH40035 Type: HEMT Frequency: 0Hz ~ 6GHz For Use With/Related Products: CGH40035F Supplied Contents: Partially Populated Board - Main IC Not Included	Package: -	Stock6,912
CGHV27100-TB	Cree/Wolfspeed	EVAL BOARD FOR CGHV27100 Type: HEMT Frequency: 2.5GHz ~ 2.7GHz For Use With/Related Products: CGHV27100 Supplied Contents: Partially Populated Board - Main IC Not Included	Package: -	Stock8,298
CGHV40030-TB	Cree/Wolfspeed	TEST FIXTURE FOR CGHV40300F Type: FET Frequency: 960MHz ~ 1.4GHz For Use With/Related Products: CGHV40030 Supplied Contents: Partially Populated Board - Main IC Not Included	Package: -	Stock6,732
CMPA5585030F	Cree/Wolfspeed	IC Frequency: 5.5GHz ~ 8.5GHz P1dB: - Gain: 26dB Noise Figure: - RF Type: - Voltage - Supply: 28V Current - Supply: - Test Frequency: - Package / Case: 440213 Supplier Device Package: 440213	Package: 440213	Stock2,466
CMPA0060025F	Cree/Wolfspeed	IC AMP GAN HEMT MMIC 780019 Frequency: 20MHz ~ 6GHz P1dB: - Gain: 17dB Noise Figure: - RF Type: - Voltage - Supply: 10 V ~ 50 V Current - Supply: 20mA ~ 12A Test Frequency: 20MHz ~ 6GHz Package / Case: 780019 Supplier Device Package: 780019	Package: 780019	Stock4,356

CPMF-1200-S080B

Cree/Wolfspeed

MOSFET N-CH SICFET 1200V 50A DIE

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90.8nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1915pF @ 800V
Vgs (Max): +25V, -5V
FET Feature: -
Power Dissipation (Max): 313mW (Tj)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

Package: Die

Stock5,232

C2M0080120D

Cree/Wolfspeed

MOSFET N-CH 1200V 31.6A TO247

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 192W (Tc)
Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

Package: TO-247-3

Stock7,104

C3M0120090J-TR

Cree/Wolfspeed

MOSFET N-CH 900V 22A

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
Vgs (Max): +18V, -8V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Stock6,736

C3M0065090J

Cree/Wolfspeed

MOSFET N-CH 900V 35A D2PAK-7

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 2.1V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
Vgs (Max): +19V, -8V
FET Feature: -
Power Dissipation (Max): 113W (Tc)
Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Stock62,232

CGHV27100F

Cree/Wolfspeed

FET RF 50V 2.7GHZ 440162

Transistor Type: HEMT
Frequency: 2.5GHz ~ 2.7GHz
Gain: 18dB
Voltage - Test: 50V
Current Rating: 6A
Noise Figure: -
Current - Test: 500mA
Power - Output: 100W
Voltage - Rated: 50V
Package / Case: 440162
Supplier Device Package: 440162

Package: 440162

Stock7,968

CGHV35150F

Cree/Wolfspeed

FET RF 125V 3.5GHZ 440193

Transistor Type: HEMT
Frequency: 2.9GHz ~ 3.5GHz
Gain: 13.3dB
Voltage - Test: 50V
Current Rating: 12A
Noise Figure: -
Current - Test: 500mA
Power - Output: 170W
Voltage - Rated: 125V
Package / Case: 440193
Supplier Device Package: 440193

Package: 440193

Stock5,312

CGHV60040D

Cree/Wolfspeed

RF MOSFET HEMT 50V DIE

Transistor Type: HEMT
Frequency: 6GHz
Gain: 17dB
Voltage - Test: 50V
Current Rating: -
Noise Figure: -
Current - Test: 65mA
Power - Output: 40W
Voltage - Rated: 150V
Package / Case: Die
Supplier Device Package: Die

Package: Die

Stock8,208

CGHV31500F

Cree/Wolfspeed

FET RF 125V 24A 440217

Transistor Type: HEMT
Frequency: 2.7GHz ~ 3.1GHz
Gain: 13.5dB
Voltage - Test: 50V
Current Rating: 24A
Noise Figure: -
Current - Test: 500mA
Power - Output: 500W
Voltage - Rated: 125V
Package / Case: 440217
Supplier Device Package: 440217

Package: 440217

Stock5,904

CGHV35400F

Cree/Wolfspeed

FET RF 125V 3.5GHZ 440210

Transistor Type: HEMT
Frequency: 2.9GHz ~ 3.5GHz
Gain: 11dB
Voltage - Test: 45V
Current Rating: 24A
Noise Figure: -
Current - Test: 500mA
Power - Output: 455W
Voltage - Rated: 125V
Package / Case: 440210
Supplier Device Package: 440210

Package: 440210

Stock7,520

CGH40090PP

Cree/Wolfspeed

FET RF 84V 4GHZ 440199

Transistor Type: HEMT
Frequency: 0Hz ~ 4GHz
Gain: 12.5dB
Voltage - Test: 28V
Current Rating: 28A
Noise Figure: -
Current - Test: 1A
Power - Output: 100W
Voltage - Rated: 84V
Package / Case: 440199
Supplier Device Package: 440199

Package: 440199

Stock6,276

CGH80030D-GP4

Cree/Wolfspeed

RF MOSFET HEMT 28V DIE

Transistor Type: HEMT
Frequency: 8GHz
Gain: 16.5dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 200mA
Power - Output: 30W
Voltage - Rated: 84V
Package / Case: Die
Supplier Device Package: Die

Package: Die

Stock6,816

CGH40006P

Cree/Wolfspeed

FET RF 84V 6GHZ 440109

Transistor Type: HEMT
Frequency: 0Hz ~ 6GHz
Gain: 13dB
Voltage - Test: 28V
Current Rating: 3.5A
Noise Figure: -
Current - Test: 100mA
Power - Output: 8W
Voltage - Rated: 84V
Package / Case: 440109
Supplier Device Package: 440109

Package: 440109

Stock9,324

CAS300M12BM2

Cree/Wolfspeed

MOSFET 2N-CH 1200V 404A MODULE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 404A
Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 300A, 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 11700pF @ 600V
Power - Max: 1660W
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module, Screw Terminals
Supplier Device Package: Module

Package: Module, Screw Terminals

Stock5,248

CSD10060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 16.5A TO220

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 16.5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-220-2

Stock10,092

CPW3-1700-S025B-WP

Cree/Wolfspeed

DIODE SILICON 1.7KV 25A CHIP

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 2V @ 25A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 1700V
Capacitance @ Vr, F: 2250pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C

Package: Die

Stock5,664

C3D04060E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 600V 15.5A TO252

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15.5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock10,356

C3D03060E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 600V 11.5A TO252

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 11.5A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock102,312

C3D02060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 2A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-220-2

Stock3,952

C3D08060G

Cree/Wolfspeed

DIODE SCHOTTKY 600V 8A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 441pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock14,772

C3D08060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 8A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 441pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-220-2

Stock34,488

C4D02120A

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 2A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-220-2

Stock24,792

CSD01060E

Cree/Wolfspeed

DIODE SCHOTTKY 600V 1A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock109,674

C4D30120D

Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 1200V 21.5A

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 21.5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

Package: TO-247-3

Stock3,712

C3D20060D

Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 600V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

Package: TO-247-3

Stock4,592

CGHV27060MP-AMP1

Cree/Wolfspeed

EVAL BOARD FOR CGHV27060

Type: HEMT
Frequency: 0Hz ~ 2.7GHz
For Use With/Related Products: CGHV27060
Supplied Contents: Board

Package: -

Stock4,950

CGH40035F-TB

Cree/Wolfspeed

BOARD DEMO AMP CIRCUIT CGH40035

Type: HEMT
Frequency: 0Hz ~ 6GHz
For Use With/Related Products: CGH40035F
Supplied Contents: Partially Populated Board - Main IC Not Included

Package: -

Stock6,912

CGHV27100-TB

Cree/Wolfspeed

EVAL BOARD FOR CGHV27100

Type: HEMT
Frequency: 2.5GHz ~ 2.7GHz
For Use With/Related Products: CGHV27100
Supplied Contents: Partially Populated Board - Main IC Not Included

Package: -

Stock8,298

CGHV40030-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV40300F

Type: FET
Frequency: 960MHz ~ 1.4GHz
For Use With/Related Products: CGHV40030
Supplied Contents: Partially Populated Board - Main IC Not Included

Package: -

Stock6,732

CMPA5585030F

Cree/Wolfspeed

IC

Frequency: 5.5GHz ~ 8.5GHz
P1dB: -
Gain: 26dB
Noise Figure: -
RF Type: -
Voltage - Supply: 28V
Current - Supply: -
Test Frequency: -
Package / Case: 440213
Supplier Device Package: 440213

Package: 440213

Stock2,466

CMPA0060025F

Cree/Wolfspeed

IC AMP GAN HEMT MMIC 780019

Frequency: 20MHz ~ 6GHz
P1dB: -
Gain: 17dB
Noise Figure: -
RF Type: -
Voltage - Supply: 10 V ~ 50 V
Current - Supply: 20mA ~ 12A
Test Frequency: 20MHz ~ 6GHz
Package / Case: 780019
Supplier Device Package: 780019

Package: 780019

Stock4,356