Page 7 - Cree/Wolfspeed Products | Heisener Electronics

Part Number	Manufacturer	Description	Package	Stock
CMF20120D	Cree/Wolfspeed	MOSFET N-CH 1200V 42A TO-247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90.8nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1915pF @ 800V Vgs (Max): +25V, -5V FET Feature: - Power Dissipation (Max): 215W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 20V Operating Temperature: -55°C ~ 135°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,632
C3M0120100J	Cree/Wolfspeed	MOSFET N-CH SIC 1KV 22A D2PAK-7 FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V Vgs (Max): +15V, -4V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Stock6,048
C2M0045170D	Cree/Wolfspeed	MOSFET NCH 1.7KV 72A TO247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 18mA Gate Charge (Qg) (Max) @ Vgs: 188nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3672pF @ 1kV Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 50A, 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock10,692
CRF24010PE	Cree/Wolfspeed	FET RF 120V 1.95GHZ 440196 Transistor Type: Silicon Carbide MESFET Frequency: 1.95GHz Gain: 15dB Voltage - Test: 48V Current Rating: 1.8A Noise Figure: 3.1dB Current - Test: 500mA Power - Output: 12W Voltage - Rated: 120V Package / Case: 440196 Supplier Device Package: 440196	Package: 440196	Stock5,216
CGH40010P	Cree/Wolfspeed	FET RF 28V 6GHZ 440196 Transistor Type: HEMT Frequency: 0Hz ~ 6GHz Gain: 14.5dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 200mA Power - Output: 12.5W Voltage - Rated: 28V Package / Case: 440196 Supplier Device Package: 440196	Package: 440196	Stock3,936
CGH55015F1	Cree/Wolfspeed	FET RF 84V 5.8GHZ 440166 Transistor Type: HEMT Frequency: 5.5GHz ~ 5.8GHz Gain: 11dB Voltage - Test: 28V Current Rating: 1.5A Noise Figure: - Current - Test: 115mA Power - Output: 15W Voltage - Rated: 84V Package / Case: 440196 Supplier Device Package: 440196	Package: 440196	Stock6,684
CGH60015D	Cree/Wolfspeed	RF MOSFET HEMT 28V DIE Transistor Type: HEMT Frequency: 6GHz Gain: 15dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 200mA Power - Output: 15W Voltage - Rated: 84V Package / Case: Die Supplier Device Package: Die	Package: Die	Stock5,408
CGH60060D-GP4	Cree/Wolfspeed	RF MOSFET HEMT 28V DIE Transistor Type: HEMT Frequency: 6GHz Gain: 13dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 400mA Power - Output: 60W Voltage - Rated: 84V Package / Case: Die Supplier Device Package: Die	Package: Die	Stock6,504
CGHV14500F	Cree/Wolfspeed	FET RF 125V 1.4GHZ 440117 Transistor Type: HEMT Frequency: 1.2GHz ~ 1.4GHz Gain: 17dB Voltage - Test: 50V Current Rating: 36A Noise Figure: - Current - Test: 500mA Power - Output: 500W Voltage - Rated: 125V Package / Case: 440117 Supplier Device Package: 440117	Package: 440117	Stock7,424
CGH40010F	Cree/Wolfspeed	FET RF 84V 6GHZ 440166 Transistor Type: HEMT Frequency: 0Hz ~ 6GHz Gain: 14.5dB Voltage - Test: 28V Current Rating: 3.5A Noise Figure: - Current - Test: 200mA Power - Output: 12.5W Voltage - Rated: 84V Package / Case: 440166 Supplier Device Package: 440166	Package: 440166	Stock15,240
CAS100H12AM1	Cree/Wolfspeed	MOSFET 2N-CH 1200V 168A MODULE FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 168A Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 3.1V @ 50mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 800V Power - Max: 568W Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	Package: Module	Stock7,872
CAS300M17BM2	Cree/Wolfspeed	MOSFET 2N-CH 1700V 325A MODULE FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 325A Rds On (Max) @ Id, Vgs: 10 mOhm @ 225A, 20V Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V Power - Max: 1760W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	Package: Module	Stock7,936
CCS050M12CM2	Cree/Wolfspeed	MOSFET 6N-CH 1200V 87A MODULE FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 87A Rds On (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 2.3V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2.810nF @ 800V Power - Max: 337W Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	Package: Module	Stock5,440
C4D10120E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 33A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 33A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 250µA @ 1200V Capacitance @ Vr, F: 754pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,736
C4D08120E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 24.5A TO252 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 24.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 250µA @ 1200V Capacitance @ Vr, F: 560pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,096
C4D05120E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 19A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 19A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 150µA @ 1200V Capacitance @ Vr, F: 390pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,568
C4D02120E	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 2A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: 167pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,328
C3D04065E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 650V 4A TO252 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 60µA @ 650V Capacitance @ Vr, F: 251pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,024
C3D06060F	Cree/Wolfspeed	DIODE SCHOTTKY 600V 6A TO220-F2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 294pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220-F2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2 Full Pack	Stock6,512
C3D1P7060Q	Cree/Wolfspeed	DIODE SCHOTTKY 600V 1.7A 10PQFN Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.7A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1.7A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 100pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 10-PowerTQFN Supplier Device Package: 10-Power QFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 160°C	Package: 10-PowerTQFN	Stock2,176
C3D16065A	Cree/Wolfspeed	DIODE SCHOTTKY 650V 39A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 39A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 16A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 95µA @ 650V Capacitance @ Vr, F: 878pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2	Stock18,828
C4D08120E	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 8A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 3V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 250µA @ 1200V Capacitance @ Vr, F: 560pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock34,110
C3D02060E	Cree/Wolfspeed	DIODE SCHOTTKY 600V 2A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 120pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock20,388
C3D10060G	Cree/Wolfspeed	DIODE SCHOTTKY 600V 10A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 480pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock26,490
CGHV40100P-TB	Cree/Wolfspeed	TEST FIXTURE FOR CGHV40100P Type: FET Frequency: 500MHz ~ 2.5GHz For Use With/Related Products: CGHV40100 Supplied Contents: Partially Populated Board - Main IC Not Included	Package: -	Stock3,420
CGH40180PP-TB	Cree/Wolfspeed	BOARD DEMO AMP CIRCUIT CGH40180 Type: HEMT Frequency: 2.5GHz For Use With/Related Products: CGH40180 Supplied Contents: Partially Populated Board - Main IC Not Included	Package: -	Stock8,514
CGHV31500F-TB	Cree/Wolfspeed	TEST FIXTURE FOR CGHV31500F Type: HEMT Frequency: 2.7GHz ~ 3.1GHz For Use With/Related Products: CGHV31500F Supplied Contents: Partially Populated Board - Main IC Not Included	Package: -	Stock4,356
CGH40120F-TB	Cree/Wolfspeed	BOARD DEMO AMP CIRCUIT CGH40120 Type: HEMT Frequency: 0Hz ~ 4GHz For Use With/Related Products: CGH40120F Supplied Contents: Partially Populated Board - Main IC Not Included	Package: -	Stock6,012
CGH55030F-TB	Cree/Wolfspeed	RF EVAL HEMT AMPLIFIER Type: Amplifier Frequency: 4.5GHz ~ 6GHz For Use With/Related Products: CGH55030 Supplied Contents: Partially Populated Board - Main IC Not Included	Package: -	Stock6,804
CGH40010F-TB	Cree/Wolfspeed	BOARD DEMO AMP CIRCUIT CGH40010 Type: HEMT Frequency: 0Hz ~ 6GHz For Use With/Related Products: CGH40010F/ CGH40010P Supplied Contents: Partially Populated Board - Main IC Not Included	Package: -	Stock8,640

CMF20120D

Cree/Wolfspeed

MOSFET N-CH 1200V 42A TO-247-3

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90.8nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1915pF @ 800V
Vgs (Max): +25V, -5V
FET Feature: -
Power Dissipation (Max): 215W (Tc)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 20V
Operating Temperature: -55°C ~ 135°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

Package: TO-247-3

Stock7,632

C3M0120100J

Cree/Wolfspeed

MOSFET N-CH SIC 1KV 22A D2PAK-7

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
Vgs (Max): +15V, -4V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Stock6,048

C2M0045170D

Cree/Wolfspeed

MOSFET NCH 1.7KV 72A TO247

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 4V @ 18mA
Gate Charge (Qg) (Max) @ Vgs: 188nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3672pF @ 1kV
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 70 mOhm @ 50A, 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

Package: TO-247-3

Stock10,692

CRF24010PE

Cree/Wolfspeed

FET RF 120V 1.95GHZ 440196

Transistor Type: Silicon Carbide MESFET
Frequency: 1.95GHz
Gain: 15dB
Voltage - Test: 48V
Current Rating: 1.8A
Noise Figure: 3.1dB
Current - Test: 500mA
Power - Output: 12W
Voltage - Rated: 120V
Package / Case: 440196
Supplier Device Package: 440196

Package: 440196

Stock5,216

CGH40010P

Cree/Wolfspeed

FET RF 28V 6GHZ 440196

Transistor Type: HEMT
Frequency: 0Hz ~ 6GHz
Gain: 14.5dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 200mA
Power - Output: 12.5W
Voltage - Rated: 28V
Package / Case: 440196
Supplier Device Package: 440196

Package: 440196

Stock3,936

CGH55015F1

Cree/Wolfspeed

FET RF 84V 5.8GHZ 440166

Transistor Type: HEMT
Frequency: 5.5GHz ~ 5.8GHz
Gain: 11dB
Voltage - Test: 28V
Current Rating: 1.5A
Noise Figure: -
Current - Test: 115mA
Power - Output: 15W
Voltage - Rated: 84V
Package / Case: 440196
Supplier Device Package: 440196

Package: 440196

Stock6,684

CGH60015D

Cree/Wolfspeed

RF MOSFET HEMT 28V DIE

Transistor Type: HEMT
Frequency: 6GHz
Gain: 15dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 200mA
Power - Output: 15W
Voltage - Rated: 84V
Package / Case: Die
Supplier Device Package: Die

Package: Die

Stock5,408

CGH60060D-GP4

Cree/Wolfspeed

RF MOSFET HEMT 28V DIE

Transistor Type: HEMT
Frequency: 6GHz
Gain: 13dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 400mA
Power - Output: 60W
Voltage - Rated: 84V
Package / Case: Die
Supplier Device Package: Die

Package: Die

Stock6,504

CGHV14500F

Cree/Wolfspeed

FET RF 125V 1.4GHZ 440117

Transistor Type: HEMT
Frequency: 1.2GHz ~ 1.4GHz
Gain: 17dB
Voltage - Test: 50V
Current Rating: 36A
Noise Figure: -
Current - Test: 500mA
Power - Output: 500W
Voltage - Rated: 125V
Package / Case: 440117
Supplier Device Package: 440117

Package: 440117

Stock7,424

CGH40010F

Cree/Wolfspeed

FET RF 84V 6GHZ 440166

Transistor Type: HEMT
Frequency: 0Hz ~ 6GHz
Gain: 14.5dB
Voltage - Test: 28V
Current Rating: 3.5A
Noise Figure: -
Current - Test: 200mA
Power - Output: 12.5W
Voltage - Rated: 84V
Package / Case: 440166
Supplier Device Package: 440166

Package: 440166

Stock15,240

CAS100H12AM1

Cree/Wolfspeed

MOSFET 2N-CH 1200V 168A MODULE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 168A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 3.1V @ 50mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 800V
Power - Max: 568W
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

Package: Module

Stock7,872

CAS300M17BM2

Cree/Wolfspeed

MOSFET 2N-CH 1700V 325A MODULE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 325A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 225A, 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V
Power - Max: 1760W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

Package: Module

Stock7,936

CCS050M12CM2

Cree/Wolfspeed

MOSFET 6N-CH 1200V 87A MODULE

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 87A
Rds On (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 2.3V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 2.810nF @ 800V
Power - Max: 337W
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

Package: Module

Stock5,440

C4D10120E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 33A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 33A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,736

C4D08120E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 24.5A TO252

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 24.5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,096

C4D05120E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 19A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 19A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 150µA @ 1200V
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,568

C4D02120E

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 2A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,328

C3D04065E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 650V 4A TO252

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 60µA @ 650V
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,024

C3D06060F

Cree/Wolfspeed

DIODE SCHOTTKY 600V 6A TO220-F2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 294pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220-F2
Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-220-2 Full Pack

Stock6,512

C3D1P7060Q

Cree/Wolfspeed

DIODE SCHOTTKY 600V 1.7A 10PQFN

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.7A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1.7A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 100pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 10-PowerTQFN
Supplier Device Package: 10-Power QFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 160°C

Package: 10-PowerTQFN

Stock2,176

C3D16065A

Cree/Wolfspeed

DIODE SCHOTTKY 650V 39A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 39A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 16A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 95µA @ 650V
Capacitance @ Vr, F: 878pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-220-2

Stock18,828

C4D08120E

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 8A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 3V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock34,110

C3D02060E

Cree/Wolfspeed

DIODE SCHOTTKY 600V 2A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock20,388

C3D10060G

Cree/Wolfspeed

DIODE SCHOTTKY 600V 10A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock26,490

CGHV40100P-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV40100P

Type: FET
Frequency: 500MHz ~ 2.5GHz
For Use With/Related Products: CGHV40100
Supplied Contents: Partially Populated Board - Main IC Not Included

Package: -

Stock3,420

CGH40180PP-TB

Cree/Wolfspeed

BOARD DEMO AMP CIRCUIT CGH40180

Type: HEMT
Frequency: 2.5GHz
For Use With/Related Products: CGH40180
Supplied Contents: Partially Populated Board - Main IC Not Included

Package: -

Stock8,514

CGHV31500F-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV31500F

Type: HEMT
Frequency: 2.7GHz ~ 3.1GHz
For Use With/Related Products: CGHV31500F
Supplied Contents: Partially Populated Board - Main IC Not Included

Package: -

Stock4,356

CGH40120F-TB

Cree/Wolfspeed

BOARD DEMO AMP CIRCUIT CGH40120

Type: HEMT
Frequency: 0Hz ~ 4GHz
For Use With/Related Products: CGH40120F
Supplied Contents: Partially Populated Board - Main IC Not Included

Package: -

Stock6,012

CGH55030F-TB

Cree/Wolfspeed

RF EVAL HEMT AMPLIFIER

Type: Amplifier
Frequency: 4.5GHz ~ 6GHz
For Use With/Related Products: CGH55030
Supplied Contents: Partially Populated Board - Main IC Not Included

Package: -

Stock6,804

CGH40010F-TB

Cree/Wolfspeed

BOARD DEMO AMP CIRCUIT CGH40010

Type: HEMT
Frequency: 0Hz ~ 6GHz
For Use With/Related Products: CGH40010F/ CGH40010P
Supplied Contents: Partially Populated Board - Main IC Not Included

Package: -

Stock8,640