Microsemi Corporation Products - Transistors - FETs, MOSFETs - Single | Heisener Electronics
Contact Us
SalesDept@heisener.com +86-755-83210559 ext. 803
Login/Register
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Cart 0

Microsemi Corporation Products - Transistors - FETs, MOSFETs - Single

Records 613
Page  1/21
Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
APL502LG
Microsemi Corporation

MOSFET N-CH 500V 58A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 730W (Tc)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 29A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
Package: TO-264-3, TO-264AA
Stock7,560
MOSFET (Metal Oxide)
500V
58A (Tc)
15V
4V @ 2.5mA
-
9000pF @ 25V
±30V
-
730W (Tc)
90 mOhm @ 29A, 12V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT50M65JFLL
Microsemi Corporation

MOSFET N-CH 500V 58A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 58A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7010pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 29A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
Package: SOT-227-4, miniBLOC
Stock6,432
MOSFET (Metal Oxide)
500V
58A
10V
5V @ 2.5mA
141nC @ 10V
7010pF @ 25V
±30V
-
520W (Tc)
65 mOhm @ 29A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT40SM120S
Microsemi Corporation

MOSFET N-CH 1200V 41A D3PAK

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 273W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3Pak
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Stock18,444
SiCFET (Silicon Carbide)
1200V
41A (Tc)
20V
3V @ 1mA (Typ)
130nC @ 20V
2560pF @ 1000V
+25V, -10V
-
273W (Tc)
100 mOhm @ 20A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
D3Pak
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
hot APT37M100L
Microsemi Corporation

MOSFET N-CH 1000V 37A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9835pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1135W (Tc)
  • Rds On (Max) @ Id, Vgs: 330 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264
  • Package / Case: TO-264-3, TO-264AA
Package: TO-264-3, TO-264AA
Stock6,288
MOSFET (Metal Oxide)
1000V
37A (Tc)
10V
5V @ 2.5mA
305nC @ 10V
9835pF @ 25V
±30V
-
1135W (Tc)
330 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264
TO-264-3, TO-264AA
hot APT7M120B
Microsemi Corporation

MOSFET N-CH 1200V 8A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 335W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
Package: TO-247-3
Stock104,256
MOSFET (Metal Oxide)
1200V
8A (Tc)
10V
5V @ 1mA
80nC @ 10V
2565pF @ 25V
±30V
-
335W (Tc)
2.5 Ohm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
APT5020SVRG
Microsemi Corporation

MOSFET N-CH 500V 26A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Package: -
Request a Quote
MOSFET (Metal Oxide)
500 V
26A (Tc)
10V
4V @ 1mA
225 nC @ 10 V
4440 pF @ 25 V
-
-
-
200mOhm @ 500mA, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
JANSF2N7383
Microsemi Corporation

P CHANNEL MOSFET TO-257

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Package: -
Request a Quote
-
-
6.5A (Tc)
-
-
-
-
-
-
-
-
-
-
-
-
APT5SM170B
Microsemi Corporation

SICFET N-CH 1700V 5A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 249 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2.5A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Package: -
Request a Quote
SiCFET (Silicon Carbide)
1700 V
5A (Tc)
20V
3.2V @ 500µA
21 nC @ 20 V
249 pF @ 1000 V
+25V, -10V
-
65W (Tc)
1.25Ohm @ 2.5A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
APT5SM170S
Microsemi Corporation

SICFET N-CH 1700V 4.6A D3PAK

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Package: -
Request a Quote
SiCFET (Silicon Carbide)
1700 V
4.6A (Tc)
20V
3.2V @ 500µA
29 nC @ 20 V
325 pF @ 1000 V
+25V, -10V
-
52W (Tc)
1.2Ohm @ 2A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
JANSR2N7389U
Microsemi Corporation

MOSFET P-CH 100V 6.5A 18ULCC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 12V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 18-ULCC (9.14x7.49)
  • Package / Case: 18-CLCC
Package: -
Request a Quote
MOSFET (Metal Oxide)
100 V
6.5A (Tc)
12V
4V @ 1mA
45 nC @ 12 V
-
±20V
-
25W (Tc)
350mOhm @ 6.5A, 12V
-55°C ~ 150°C
Surface Mount
18-ULCC (9.14x7.49)
18-CLCC
MSC090SMA120B
Microsemi Corporation

MOSFET N-CH 1200V TO247

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-247-3
TO-247-3
JANSR2N7269U
Microsemi Corporation

MOSFET N-CH 200V 26A U1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 26A, 12V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: U1 (SMD-1)
  • Package / Case: 3-SMD, No Lead
Package: -
Request a Quote
MOSFET (Metal Oxide)
200 V
26A (Tc)
12V
4V @ 1mA
170 nC @ 12 V
-
±20V
-
150W (Tc)
110mOhm @ 26A, 12V
-55°C ~ 150°C
Surface Mount
U1 (SMD-1)
3-SMD, No Lead
JANSR2N7261U
Microsemi Corporation

MOSFET N-CH 100V 8A 18ULCC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 8A, 12V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 18-ULCC (9.14x7.49)
  • Package / Case: 18-CLCC
Package: -
Request a Quote
MOSFET (Metal Oxide)
100 V
8A (Tc)
12V
4V @ 1mA
50 nC @ 12 V
-
±20V
-
25W (Tc)
185mOhm @ 8A, 12V
-55°C ~ 150°C
Surface Mount
18-ULCC (9.14x7.49)
18-CLCC
JANSR2N7262U
Microsemi Corporation

MOSFET N-CH 200V 5.5A 18ULCC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 364mOhm @ 5.5A, 12V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 18-ULCC (9.14x7.49)
  • Package / Case: 18-CLCC
Package: -
Request a Quote
MOSFET (Metal Oxide)
200 V
5.5A (Tc)
12V
4V @ 1mA
50 nC @ 12 V
-
±20V
-
25W (Tc)
364mOhm @ 5.5A, 12V
-55°C ~ 150°C
Surface Mount
18-ULCC (9.14x7.49)
18-CLCC
JANSR2N7268U
Microsemi Corporation

MOSFET N-CH 100V 34A U1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 34A, 12V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: U1 (SMD-1)
  • Package / Case: 3-SMD, No Lead
Package: -
Request a Quote
MOSFET (Metal Oxide)
100 V
34A (Tc)
12V
4V @ 1mA
160 nC @ 12 V
-
±20V
-
150W (Tc)
70mOhm @ 34A, 12V
-55°C ~ 150°C
Surface Mount
U1 (SMD-1)
3-SMD, No Lead
APT130SM70J
Microsemi Corporation

SICFET N-CH 700V 78A SOT227

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 700 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 273W (Tc)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 60A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227 (ISOTOP®)
  • Package / Case: SOT-227-4, miniBLOC
Package: -
Request a Quote
SiCFET (Silicon Carbide)
700 V
78A (Tc)
20V
2.4V @ 1mA
270 nC @ 20 V
3950 pF @ 700 V
+25V, -10V
-
273W (Tc)
45mOhm @ 60A, 20V
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227 (ISOTOP®)
SOT-227-4, miniBLOC
APT130SM70B
Microsemi Corporation

SICFET N-CH 700V 110A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 700 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 556W (Tc)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 60A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Package: -
Request a Quote
SiCFET (Silicon Carbide)
700 V
110A (Tc)
20V
2.4V @ 1mA
220 nC @ 20 V
3950 pF @ 700 V
+25V, -10V
-
556W (Tc)
45mOhm @ 60A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
APT130SM70S
Microsemi Corporation

MOSFET N-CH 700V D3PAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
APT35SM70B
Microsemi Corporation

SICFET N-CH 700V 35A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 700 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 176W (Tc)
  • Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Package: -
Request a Quote
SiCFET (Silicon Carbide)
700 V
35A (Tc)
20V
2.5V @ 1mA
67 nC @ 20 V
1035 pF @ 700 V
+25V, -10V
-
176W (Tc)
145mOhm @ 10A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
APT35SM70S
Microsemi Corporation

SICFET 700V 35A TO247-3

  • FET Type: -
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 35A
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Package: -
Request a Quote
SiCFET (Silicon Carbide)
700 V
35A
-
-
-
-
-
-
-
-
-
Through Hole
TO-247-3
TO-247-3
JANSR2N7380
Microsemi Corporation

MOSFET N-CH 100V 14.4A TO257

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 14.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 14.4A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-257
  • Package / Case: TO-257-3
Package: -
Request a Quote
MOSFET (Metal Oxide)
100 V
14.4A (Tc)
12V
4V @ 1mA
40 nC @ 12 V
-
±20V
-
2W (Ta), 75W (Tc)
200mOhm @ 14.4A, 12V
-55°C ~ 150°C (TJ)
Through Hole
TO-257
TO-257-3
JANSR2N7381
Microsemi Corporation

MOSFET N-CH 200V 9.4A TO257

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 490mOhm @ 9.4A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-257
  • Package / Case: TO-257-3
Package: -
Request a Quote
MOSFET (Metal Oxide)
200 V
9.4A (Tc)
12V
4V @ 1mA
50 nC @ 12 V
-
±20V
-
2W (Ta), 75W (Tc)
490mOhm @ 9.4A, 12V
-55°C ~ 150°C (TJ)
Through Hole
TO-257
TO-257-3
JANSR2N7389
Microsemi Corporation

MOSFET P-CH 100V 6.5A TO205AF

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 12V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-205AF (TO-39)
  • Package / Case: TO-205AF Metal Can
Package: -
Request a Quote
MOSFET (Metal Oxide)
100 V
6.5A (Tc)
12V
4V @ 1mA
45 nC @ 12 V
-
±20V
-
25W (Tc)
350mOhm @ 6.5A, 12V
-55°C ~ 150°C
Through Hole
TO-205AF (TO-39)
TO-205AF Metal Can
JANSR2N7269
Microsemi Corporation

MOSFET N-CH 200V 26A TO254AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 26A, 12V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-254AA
  • Package / Case: TO-254-3, TO-254AA
Package: -
Request a Quote
MOSFET (Metal Oxide)
200 V
26A (Tc)
12V
4V @ 1mA
170 nC @ 12 V
-
±20V
-
150W (Tc)
110mOhm @ 26A, 12V
-55°C ~ 150°C
Through Hole
TO-254AA
TO-254-3, TO-254AA
APT50M80B2VRG
Microsemi Corporation

MOSFET N-CH 500V 58A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 423 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8797 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 29A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX™ [B2]
  • Package / Case: TO-247-3 Variant
Package: -
Request a Quote
MOSFET (Metal Oxide)
500 V
58A (Tc)
10V
4V @ 2.5mA
423 nC @ 10 V
8797 pF @ 25 V
-
-
-
80mOhm @ 29A, 10V
-
Through Hole
T-MAX™ [B2]
TO-247-3 Variant
APT6017B2LLG
Microsemi Corporation

MOSFET N-CH 600V 35A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 17.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX™ [B2]
  • Package / Case: TO-247-3 Variant
Package: -
Request a Quote
MOSFET (Metal Oxide)
600 V
35A (Tc)
10V
5V @ 2.5mA
100 nC @ 10 V
4500 pF @ 25 V
±30V
-
500W (Tc)
170mOhm @ 17.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX™ [B2]
TO-247-3 Variant
APT8024LVRG
Microsemi Corporation

MOSFET N-CH 800V 33A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7740 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 16.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
Package: -
Request a Quote
MOSFET (Metal Oxide)
800 V
33A (Tc)
10V
4V @ 2.5mA
425 nC @ 10 V
7740 pF @ 25 V
-
-
-
240mOhm @ 16.5A, 10V
-
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
MSC280SMA120S
Microsemi Corporation

SICFET N-CH 1.2KV D3PAK

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Package: -
Request a Quote
SiCFET (Silicon Carbide)
1200 V
-
-
-
-
-
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT10043JVR
Microsemi Corporation

MOSFET N-CH 1000V 22A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 430mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
Package: -
Request a Quote
MOSFET (Metal Oxide)
1000 V
22A (Tj)
-
4V @ 1mA
480 nC @ 10 V
9000 pF @ 25 V
-
-
-
430mOhm @ 500mA, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
MSC750SMA120B
Microsemi Corporation

MOSFET N-CH 1200V TO247

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-