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AP2111MPG-13

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AP2111MPG-13

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Part Number AP2111MPG-13
Manufacturer Diodes Incorporated
Description IC USB SWITCH 2.45A CURR 8MSOP
Datasheet AP2111MPG-13 Datasheet
Package 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
In Stock 21,014 piece(s)
Unit Price $ 0.1550 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 25 - Jan 30 (Choose Expedited Shipping)
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Part Number # AP2111MPG-13 (PMIC - Power Distribution Switches, Load Drivers) is manufactured by Diodes Incorporated and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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AP2111MPG-13 Specifications

ManufacturerDiodes Incorporated
CategoryIntegrated Circuits (ICs) - PMIC - Power Distribution Switches, Load Drivers
Datasheet AP2111MPG-13Datasheet
Package8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Series-
Switch TypeUSB Switch
Number of Outputs1
Ratio - Input:Output1:1
Output ConfigurationHigh Side
Output TypeP-Channel
InterfaceOn/Off
Voltage - Load2.7 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd)Not Required
Current - Output (Max)2A
Rds On (Typ)90 mOhm
Input TypeNon-Inverting
FeaturesLoad Discharge, Status Flag
Fault ProtectionCurrent Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Operating Temperature-35°C ~ 85°C (TA)
Package / Case8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package8-MSOP-EP

AP2111MPG-13 Datasheet

Page 1

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AP2101/AP2111 Document number: DS32015 Rev. 3 - 2 1 of 14 www.diodes.com January 2013 © Diodes Incorporated AP2101/AP2111 2A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH Description The AP2101 and AP2111 are integrated high-side power switches optimized for Universal Serial Bus (USB) and other hot-swap applications. The family of devices complies with USB 2.0 and available with both polarities of Enable input. They offer current and thermal limiting and short circuit protection as well as controlled rise time, under-voltage lockout and auto-discharge functionalities. A 7ms deglitch capability on the open-drain Flag output prevents false over-current reporting and does not require any external components. All devices are available in SO-8 and MSOP-8EP packages. Features • Single USB port power switches with auto-discharge • Short-circuit current and thermal protection • 2.45A accurate current limiting • Fast transient response time: 5μs • 90mΩ on-resistance • Reverse Current Blocking • Input voltage range: 2.7V – 5.5V • 0.6ms typical rise time • Very low shutdown current: 1μA (max) • Fault report (FLG) with blanking time (7ms typ) • ESD protection: 4kV HBM, 300V MM • Active low (AP2101) or active high (AP2111) enable • Ambient temperature range: -35°C to 85°C • SO-8 and MSOP-8EP (Exposed Pad): Available in “Green” Molding Compound (No Br, Sb) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) • UL Recognized, File Number E322375 • IEC60950-1 CB Scheme Certified Pin Assignments SO-8 ( Top View ) 1 2 3 4 8 7 6 5 NC OUT FLG OUT GND EN IN IN MSOP-8EP 1 2 3 4 8 7 6 5 NC OUT FLG OUT GND EN IN IN ( Top View ) Applications • Consumer electronics – LCD TV & Monitor, Game Machines • Communications – Set-Top-Box, GPS, Smartphone • Computing – Laptop, Desktop, Servers, Printers, Docking Station, HUB Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Typical Applications Circuit 0.1uF IN GNDEN OUT ON 120uF Power Supply 2.7V to 5.5V 0.1uF OFF FLG Load 10k 10uF AP2111 Enable Active High

Page 3

AP2101/AP2111 Document number: DS32015 Rev. 3 - 2 2 of 14 www.diodes.com January 2013 © Diodes Incorporated AP2101/AP2111 Available Options Part Number Channel Enable Pin (EN) Current Limit (Typical) Recommended Maximum Continuous Load Current AP2101 1 Active Low 2.45A 2.0A AP2111 1 Active High 2.45A 2.0A Pin Descriptions Pin Name Pin Number Functions SO-8 MSOP-8EP GND 1 1 Ground IN 2, 3 2, 3 Voltage input pin (all IN pins must be tied together externally) EN 4 4 Enable input, active low (AP2101) or active high (AP2111) FLG 5 5 Over-current and over-temperature fault report; open-drain flag is active low when triggered OUT 6, 7 6, 7 Voltage output pin (all OUT pins must be tied together externally) NC 8 8 No internal connection; recommend tie to OUT pins Exposed tab — Exposed tab Exposed pad. It should be connected to GND and thermal mass for enhanced thermal impedance. It should not be used as electrical ground conduction path. Functional Block Diagram Thermal Sense FLG OUT GND IN EN UVLO Current Limit Current Sense Deglitch Discharge Control Driver Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Parameter Ratings Units ESD HBM Human Body Model ESD Protection 4 kV ESD MM Machine Model ESD Protection 300 V VIN Input Voltage 6.5 V VOUT Output Voltage VIN +0.3 V VEN , VFLG Enable Voltage 6.5 V ILOAD Maximum Continuous Load Current Internal Limited A TJ(MAX) Maximum Junction Temperature 150 °C TST Storage Temperature Range (Note 4) -65 to +150 °C Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices Note: 4. UL Recognized Rating from -30°C to 70°C (Diodes qualified TST from -65°C to 150°C)

Page 4

AP2101/AP2111 Document number: DS32015 Rev. 3 - 2 3 of 14 www.diodes.com January 2013 © Diodes Incorporated AP2101/AP2111 Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Symbol Parameter Min Max Units VIN Input voltage 2.7 5.5 V IOUT Output Current 0 2.0 A TA Operating Ambient Temperature -35 85 °C VIL EN Input Logic Low Voltage 0 0.8 V VIH EN Input Logic High Voltage 2 VIN V Electrical Characteristics (@TA = +25°C, VIN = +5.0V, unless otherwise specified.) Symbol Parameter Test Conditions (Note 5) Min Typ Max Unit VUVLO Input UVLO RLOAD = 1kΩ 1.6 1.9 2.5 V ISHDN Input Shutdown Current Disabled, IOUT = 0 0.5 1 µA IQ Input Quiescent Current Enabled, IOUT = 0 45 70 µA ILEAK Input Leakage Current Disabled, OUT grounded 1 µA IREV Reverse Leakage Current Disabled, VIN = 0V, VOUT = 5V, IREV at VIN 0.05 µA RDS(ON) Switch On-Resistance VIN = 5V, IOUT = 1.5A TA = +25°C MSOP8-EP 90 115 mΩ SO-8 95 115 -40°C ≤ TA ≤ +85°C 140 VIN = 3.3V, IOUT = 1.5A TA = 25°C 115 140 -40°C ≤ TA ≤ +85°C 170 ILIMIT Over-Load Current Limit VIN = 5V, VOUT = 4.5V, CL=120µF 2.1 2.45 2.8 A ITRIG Current Limiting Trigger Threshold Output Current Slew rate (<100A/s) , CL = 100µF 2.5 A ISHORT Short-Circuit Current Limit Enabled into short circuit, CL = 100µF 2.5 A TSHORT Short-Circuit Response Time VOUT = 0V to IOUT = ILIMIT (short applied to output) 5 µs VIL EN Input Logic Low Voltage VIN = 2.7V to 5.5V 0.8 V VIH EN Input Logic High Voltage VIN = 2.7V to 5.5V 2 V ISINK EN Input leakage VEN = 5V 1 µA TD(ON) Output Turn-On Delay Time CL = 1µF, RLOAD = 10Ω 50 µs TR Output Turn-On Rise Time CL = 1µF, RLOAD = 10Ω 0.6 1.5 ms TD(OFF) Output Turn-Off Delay Time CL = 1µF, RLOAD = 10Ω 4 µs TF Output Turn-Off Fall Time CL = 1µF, RLOAD = 10Ω 0.03 0.1 ms RFLG FLG Output FET On-Resistance IFLG =10mA, CL=100µF 20 40 Ω TBLANK FLG Blanking Time CIN = 10µF, CL = 100µF 4 7 15 ms RDIS Discharge Resistance (Note 6) VIN = 5V, disabled, IOUT = 1mA 290 Ω TSHDN Thermal Shutdown Threshold Enabled, RLOAD = 1kΩ 140 °C THYS Thermal Shutdown Hysteresis 25 °C θJA Thermal Resistance Junction-to- Ambient SO-8 (Note 7) 110 °C/W MSOP-8EP (Note 8) 60 °C/W Notes: 5. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. 6. The discharge function is active when the device is disabled (when enable is de-asserted). The discharge function offers a resistive discharge path for the external storage capacitor. This is suitable only to discharge filter capacitors for limited time and cannot dissipate steady state currents greater than 8mA. 7. Test condition for SO-8: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout. 8. Test condition for MSOP-8EP: Device mounted on 2” x 2” FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground plane.

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AP2101/AP2111 Document number: DS32015 Rev. 3 - 2 4 of 14 www.diodes.com January 2013 © Diodes Incorporated AP2101/AP2111 Typical Performance Characteristics VEN 90% VOUT TD(ON) 10% TD(OFF) 50% 50% TR 10% 90% TF VEN 90% VOUT TD(ON) 10% TD(OFF) 50% 50% TR 10% 90% TF Figure 1. Voltage Waveforms: AP2101 (left), AP2111 (right) All Enable Plots are for AP2111 Active High Turn-On Delay and Rise Time 400µs/div Turn-Off Delay and Fall Time 400µs/div Turn-On Delay and Rise Time 400µs/div Turn-Off Delay and Fall Time 400µs/div Vout 2V/div Ven 5V/div CL = 1µF TA = +25°C RL = 5Ω Vout 2V/div Ven 5V/div CL = 1µF TA = 25°C RL = 5Ω Vout 2V/div Ven 5V/div CL = 100µF TA = +25°C RL = 5Ω Vout 2V/div Ven 5V/div CL = 100µF TA = +25°C RL = 5Ω

Page 6

AP2101/AP2111 Document number: DS32015 Rev. 3 - 2 5 of 14 www.diodes.com January 2013 © Diodes Incorporated AP2101/AP2111 Typical Performance Characteristics (cont.) Short Circuit Current, Device Enabled Into Short 500us/div Inrush Current 1ms/div 0.6 Ω Load Connected to Enabled Device 2ms/div Short Circuit with Blanking Time and Recovery 50ms/div Power On 1ms/div Power Off 10ms/div Iout 1A/div Vflag 5V/div VIN = 5V TA = +25°C CL = 100µF TA = +25°C CL = 100µF RL = 2.5Ω Iout 2A/div Vout 5V/div Vout 5V/div Vflag 5V/div VIN = 5V TA = +25°C CL = 100µF Vflag 5V/div Iout 1A/div Vin 5V/div Iout 500mA/div Ven 5V/div VIN = 5V TA = +25°C CL = 100µF Iout 500mA/div Ven 5V/div VIN = 5V TA = +25°C RL = 2.5Ω CL=470µF CL=220µF CL=100µF Vflag 5V/div Iout 1A/div Vin 5V/div Vout 5V/div TA = +25°C CL = 100µF RL = 2.5Ω

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AP2101/AP2111 Document number: DS32015 Rev. 3 - 2 6 of 14 www.diodes.com January 2013 © Diodes Incorporated AP2101/AP2111 Typical Performance Characteristics (cont.) Device Enabled 1ms/div Device Disabled 1ms/div UVLO Increasing 1ms/div UVLO Decreasing 10ms/div Turn-On Time vs Input Voltage 250 350 450 550 650 750 850 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 Input Voltage (V) T u rn -O n T im e (u s) Turn-Off Time vs Input Voltage 25 30 35 40 45 50 55 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 Input Voltage (V) T u rn -O ff T im e (u s) Vflag 5V/div Iout 1A/div Ven 5V/div Vout 5V/div Vflag 5V/div Iout 1A/div Ven 5V/div Vout 5V/div CL = 1µF RL = 10Ω TA = +25°C CL = 1µF RL = 10Ω TA = +25°C Iout 500mA/div TA = +25°C CL = 100µF RL = 2.5Ω Vin 2V/div Iout 500mA/div TA = +25°C CL = 100µF RL = 2.5Ω Vin 2V/div VIN = 5V TA = +25°C CL = 100µF RL = 2.5Ω VIN = 5V TA = +25°C CL = 100µF RL = 2.5Ω

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AP2101/AP2111 Document number: DS32015 Rev. 3 - 2 7 of 14 www.diodes.com January 2013 © Diodes Incorporated AP2101/AP2111 Typical Performance Characteristics (cont.) Rise Time vs Input Voltage 300 350 400 450 500 550 600 650 2 2.5 3 3.5 4 4.5 5 5.5 6 Input Voltage (V) R is e T im e (u s) Fall Time vs Input Voltage 19 20 21 22 23 24 25 2 2.5 3 3.5 4 4.5 5 5.5 6 Input Voltage (V) F al l T im e (u s) Supply Current, Output Enabled vs Ambient Temperature 27 32 37 42 47 52 -60 -40 -20 0 20 40 60 80 100 Ambient Temperature (°C) S u p p ly C u rr en t, O u tp u t E n ab le d ( u A ) Supply Current, Output Disabled vs Ambient Temperature 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -60 -40 -20 0 20 40 60 80 100 Ambient Temperature (°C) S u p p ly C u rr en t, O u tp u t D is ab le d ( u A ) Static Drain-Source On-State Resistance vs Ambient Temperature 70 80 90 100 110 120 130 140 -60 -40 -20 0 20 40 60 80 100 Ambient Temperature (°C) S ta ti c D ra in -S o u rc e O n -S ta te R es is ta n ce ( m Ω ) Short-Circuit Output Current vs Ambient Temperature 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 -60 -40 -20 0 20 40 60 80 100 Ambient Temperature (°C) S h o rt -C ir cu it O u tp u t C u rr en t (A ) Vin=3.3V Vin=5.0V Vin=3.3V CL = 120µF Vin=5.0V Vin=3.3V Vin=5.5V Vin=5.0V Vin=5.5V Vin=3.3V CL = 1µF RL = 10Ω TA = +25°C CL = 1µF RL = 10Ω TA = +25°C Vin=5.0V

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AP2101/AP2111 Document number: DS32015 Rev. 3 - 2 8 of 14 www.diodes.com January 2013 © Diodes Incorporated AP2101/AP2111 Typical Performance Characteristics (cont.) Undervoltage Lockout vs Ambient Temperature 1.90 1.95 2.00 2.05 2.10 2.15 -60 -40 -20 0 20 40 60 80 100 Ambient Temperature (°C) U n d er vo lt ag e L o ck o u t (V ) Threshold Trip Current vs Input Voltage 3.08 3.10 3.12 3.14 3.16 3.18 3.20 3.22 3.24 2.8 3.3 3.8 4.3 4.8 5.3 Input Voltage (V) T h re sh o ld T ri p C u rr en t (A ) Current Limit Response vs Peak Current 0 5 10 15 20 25 30 35 40 45 0 2 4 6 8 10 12 Peak Current (A) C u rr en t L im it R es p o n se ( u s) UVLO Falling UVLO Rising TA = +25°C CL = 68µF VIN = 5V TA = +25°C

Page 10

AP2101/AP2111 Document number: DS32015 Rev. 3 - 2 9 of 14 www.diodes.com January 2013 © Diodes Incorporated AP2101/AP2111 Application Information Power Supply Considerations A 0.1-μF to 1-μF X7R or X5R ceramic bypass capacitor between IN and GND, close to the device, is recommended. Placing a high-value electrolytic capacitor on the input (10-μF minimum) and output pin(s) is recommended when the output load is heavy. This precaution reduces power-supply transients that may cause ringing on the input. Additionally, bypassing the output with a 0.01-μF to 0.1-μF ceramic capacitor improves the immunity of the device to short-circuit transients. Over-Current and Short Circuit Protection An internal sensing FET is employed to check for over-current conditions. Unlike current-sense resistors, sense FETs do not increase the series resistance of the current path. When an overcurrent condition is detected, the device maintains a constant output current and reduces the output voltage accordingly. Complete shutdown occurs only if the fault stays long enough to activate thermal limiting. Three possible overload conditions can occur. In the first condition, the output has been shorted to GND before the device is enabled or before VIN has been applied. The AP2101/AP2111 senses the short circuit and immediately clamps output current to a certain safe level namely ILIMIT. In the second condition, an output short or an overload occurs while the device is enabled. At the instance the overload occurs, higher current may flow for a very short period of time before the current limit function can react. After the current limit function has tripped (reached the over- current trip threshold), the device switches into current limiting mode and the current is clamped at ILIMIT. In the third condition, the load has been gradually increased beyond the recommended operating current. The current is permitted to rise until the current-limit threshold (ITRIG) is reached or until the thermal limit of the device is exceeded. The AP2101/AP2111 is capable of delivering current up to the current-limit threshold without damaging the device. Once the threshold has been reached, the device switches into its current limiting mode and is set at ILIMIT. To protect against short circuit to GND at extremely low temperature (< -30°C), a minimum 120-μF electrolytic capacitor on the output pin is recommended. A correct capacitor type with capacitor voltage rating and temperature characteristics must be properly chosen so that capacitance value does not drop too low at the extremely low temperature operation. A recommended capacitor should have temperature characteristics of less than 10% variation of capacitance change when operated at extremely low temp. Our recommended aluminum electrolytic capacitor type is Panasonic FC series. At low input voltage condition (VIN < 3V), the short circuit protection current may rise as high as twice the typical value. FLG Response When an over-current or over-temperature shutdown condition is encountered, the FLG open-drain output goes active low after a nominal 7-ms deglitch timeout. The FLG output remains low until both over-current and over-temperature conditions are removed. Connecting a heavy capacitive load to the output of the device can cause a momentary over-current condition, which does not trigger the FLG due to the 7-ms deglitch timeout. The AP2101/AP2111 is designed to eliminate false over-current reporting without the need of external components to remove unwanted pulses. Power Dissipation and Junction Temperature The low on-resistance of the internal MOSFET allows the small surface-mount packages to pass large current. Using the maximum operating ambient temperature (TA) and RDS(ON), the power dissipation can be calculated by: PD = RDS(ON)× I 2 Finally, calculate the junction temperature: TJ = PD x RθJA + TA Where: TA= Ambient temperature °C RθJA = Thermal resistance PD = Total power dissipation

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December 23, 2020

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December 22, 2020

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