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BC558BRL1

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BC558BRL1

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Part Number BC558BRL1
Manufacturer ON Semiconductor
Description TRANS PNP 30V 0.1A TO-92
Datasheet BC558BRL1 Datasheet
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
In Stock 335 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Aug 6 - Aug 11 (Choose Expedited Shipping)
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Part Number # BC558BRL1 (Transistors - Bipolar (BJT) - Single) is manufactured by ON Semiconductor and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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BC558BRL1 Specifications

ManufacturerON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
Datasheet BC558BRL1Datasheet
PackageTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Series-
Transistor TypePNP
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)30V
Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 2mA, 5V
Power - Max625mW
Frequency - Transition360MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device PackageTO-92-3

BC558BRL1 Datasheet

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© Semiconductor Components Industries, LLC, 2005 September, 2005 − Rev. 2 1 Publication Order Number: BC556B/D BC556B, BC557A, B, C, BC558B, C Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage BC556 BC557 BC558 VCEO −65 −45 −30 Vdc Collector - Base Voltage BC556 BC557 BC558 VCBO −80 −50 −30 Vdc Emitter - Base Voltage VEBO −5.0 Vdc Collector Current − Continuous Collector Current − Peak IC ICM −100 −200 mAdc Base Current − Peak IBM −200 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RJA 200 °C/W Thermal Resistance, Junction−to−Case RJC 83.3 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com COLLECTOR 1 2 BASE 3 EMITTER BC55x = Device Code x = 6, 7, or 8 A = Assembly Location Y = Year WW = Work Week  = Pb−Free Package (Note: Microdot may be in either location) TO−92 CASE 29 STYLE 17 3 2 1 See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ORDERING INFORMATION BC 55xx AYWW   MARKING DIAGRAM

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BC556B, BC557A, B, C, BC558B, C http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = −2.0 mAdc, IB = 0) BC556 BC557 BC558 V(BR)CEO −65 −45 −30 − − − − − − V Collector−Base Breakdown Voltage (IC = −100 Adc) BC556 BC557 BC558 V(BR)CBO −80 −50 −30 − − − − − − V Emitter−Base Breakdown Voltage (IE = −100 Adc, IC = 0) BC556 BC557 BC558 V(BR)EBO −5.0 −5.0 −5.0 − − − − − − V Collector−Emitter Leakage Current (VCES = −40 V) BC556 (VCES = −20 V) BC557 BC558 (VCES = −20 V, TA = 125°C) BC556 BC557 BC558 ICES − − − − − − −2.0 −2.0 −2.0 − − − −100 −100 −100 −4.0 −4.0 −4.0 nA A ON CHARACTERISTICS DC Current Gain (IC = −10 Adc, VCE = −5.0 V) A Series Device B Series Devices C Series Devices (IC = −2.0 mAdc, VCE = −5.0 V) BC557 A Series Device B Series Devices C Series Devices (IC = −100 mAdc, VCE = −5.0 V) A Series Device B Series Devices C Series Devices hFE − − − 120 120 180 420 − − − 90 150 270 − 170 290 500 120 180 300 − − − 800 220 460 800 − − − − Collector−Emitter Saturation Voltage (IC = −10 mAdc, IB = −0.5 mAdc) (IC = −10 mAdc, IB = see Note 1) (IC = −100 mAdc, IB = −5.0 mAdc) VCE(sat) − − − −0.075 −0.3 −0.25 −0.3 −0.6 −0.65 V Base−Emitter Saturation Voltage (IC = −10 mAdc, IB = −0.5 mAdc) (IC = −100 mAdc, IB = −5.0 mAdc) VBE(sat) − − −0.7 −1.0 − − V Base−Emitter On Voltage (IC = −2.0 mAdc, VCE = −5.0 Vdc) (IC = −10 mAdc, VCE = −5.0 Vdc) VBE(on) −0.55 − −0.62 −0.7 −0.7 −0.82 V SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 V, f = 100 MHz) BC556 BC557 BC558 fT − − − 280 320 360 − − − MHz Output Capacitance (VCB = −10 V, IC = 0, f = 1.0 MHz) Cob − 3.0 6.0 pF Noise Figure (IC = −0.2 mAdc, VCE = −5.0 V, BC556 RS = 2.0 k, f = 1.0 kHz, f = 200 Hz) BC557 BC558 NF − − − 2.0 2.0 2.0 10 10 10 dB Small−Signal Current Gain (IC = −2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC557 A Series Device B Series Devices C Series Devices hfe 125 125 240 450 − − − − 900 260 500 900 − 1. IC = −10 mAdc on the constant base current characteristics, which yields the point IC = −11 mAdc, VCE = −1.0 V.

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BC556B, BC557A, B, C, BC558B, C http://onsemi.com 3 BC557/BC558 Figure 1. Normalized DC Current Gain IC, COLLECTOR CURRENT (mAdc) 2.0 Figure 2. “Saturation” and “On” Voltages IC, COLLECTOR CURRENT (mAdc) −0.2 0.2 Figure 3. Collector Saturation Region IB, BASE CURRENT (mA) Figure 4. Base−Emitter Temperature Coefficient IC, COLLECTOR CURRENT (mA) −0.6 −0.7 −0.8 −0.9 −1.0 −0.5 0 −0.2 −0.4 −0.1 −0.3 1.6 1.2 2.0 2.8 2.4 −1.2 −1.6 −2.0 −0.02 −1.0 −10 0 −20−0.1 −0.4 −0.8 h F E , N O R M A LI Z E D D C C U R R E N T G A IN V, V O LT A G E ( V O LT S ) V C E , C O LL E C T O R −E M IT T E R V O LT A G E ( V ) V B , T E M P E R A T U R E C O E F F IC IE N T ( m V / C ) ° θ 1.5 1.0 0.7 0.5 0.3 −0.2 −10 −100−1.0 TA = 25°C VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE(on) @ VCE = −10 V VCE = −10 V TA = 25°C −55°C to +125°C IC = −100 mA IC = −20 mA −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 IC = −200 mAIC = −50 mAIC = −10 mA Figure 5. Capacitances VR, REVERSE VOLTAGE (VOLTS) 10 Figure 6. Current−Gain − Bandwidth Product IC, COLLECTOR CURRENT (mAdc) −0.4 1.0 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 −0.5 C , C A P A C IT A N C E ( pF ) f , C U R R E N T −G A IN − B A N D W ID T H P R O D U C T ( M H z) T TA = 25°C Cob Cib −0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40 150 −1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50 VCE = −10 V TA = 25°C TA = 25°C 1.0

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BC556B, BC557A, B, C, BC558B, C http://onsemi.com 4 BC556 Figure 7. DC Current Gain IC, COLLECTOR CURRENT (mA) Figure 8. “On” Voltage IC, COLLECTOR CURRENT (mA) −0.8 −1.0 −0.6 −0.2 −0.4 1.0 2.0 −0.1 −1.0 −10 −200−0.2 0.2 0.5 −0.2 −1.0 −10 −200 TJ = 25°C VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE @ VCE = −5.0 V Figure 9. Collector Saturation Region IB, BASE CURRENT (mA) Figure 10. Base−Emitter Temperature Coefficient IC, COLLECTOR CURRENT (mA) −1.0 −1.2 −1.6 −2.0 −0.02 −1.0 −10 0 −20−0.1 −0.4 −0.8 V C E , C O LL E C T O R −E M IT T E R V O LT A G E ( V O LT S ) V B , T E M P E R A T U R E C O E F F IC IE N T ( m V / C ) ° θ −0.2 −2.0 −10 −200−1.0 TJ = 25°C IC = −10 mA h F E , D C C U R R E N T G A IN ( N O R M A LI Z E D ) V, V O LT A G E ( V O LT S ) VCE = −5.0 V TA = 25°C 0 −0.5 −2.0 −5.0 −20 −50 −100 −0.05 −0.2 −0.5 −2.0 −5.0 −100 mA−20 mA −1.4 −1.8 −2.2 −2.6 −3.0 −0.5 −5.0 −20 −50 −100 −55°C to 125°C VB for VBE −2.0 −5.0 −20 −50 −100 Figure 11. Capacitance VR, REVERSE VOLTAGE (VOLTS) 40 Figure 12. Current−Gain − Bandwidth Product IC, COLLECTOR CURRENT (mA) −0.1 −0.2 −1.0 −50 2.0 −2.0 −10 −100 100 200 500 50 20 20 10 6.0 4.0 −1.0 −10 −100 VCE = −5.0 V C , C A P A C IT A N C E ( pF ) f , C U R R E N T −G A IN − B A N D W ID T H P R O D U C T T −0.5 −5.0 −20 TJ = 25°C Cob Cib 8.0 −50 mA −200 mA

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BC556B, BC557A, B, C, BC558B, C http://onsemi.com 5 Figure 13. Thermal Response t, TIME (ms) 1.0 r( t) , T R A N S IE N T T H E R M A L 2.0 5.01.00.50.20.1 R E S IS TA N C E ( N O R M A LI Z E D ) 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 20 5010 200 500100 1.0k 2.0k 5.0k 10 Figure 14. Active Region − Safe Operating Area VCE, COLLECTOR−EMITTER VOLTAGE (V) −200 −1.0 I C , C O LL E C T O R C U R R E N T ( m A ) TA = 25°C D = 0.5 0.2 0.1 0.05 SINGLE PULSE SINGLE PULSE BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 3 ms TJ = 25°C ZJC(t) = (t) RJC RJC = 83.3°C/W MAX ZJA(t) = r(t) RJA RJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RJC(t) t1 t2 P(pk) DUTY CYCLE, D = t1/t2 −100 −50 −10 −5.0 −2.0 −5.0 −10 −30 −45 −65 −100 1 s BC558 BC557 BC556 The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.

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BC556B, BC557A, B, C, BC558B, C http://onsemi.com 6 DEVICE ORDERING INFORMATION Device Package Shipping† BC556B TO−92 5000 Units / Bulk BC556BG TO−92 (Pb−Free) 5000 Units / Bulk BC556BZL1 TO−92 2000 / Ammo Box BC556BZL1G TO−92 (Pb−Free) 2000 / Ammo Box BC557AZL1 TO−92 2000 / Ammo Box BC557AZL1G TO−92 (Pb−Free) 2000 / Ammo Box BC557B TO−92 5000 Units / Bulk BC557BG TO−92 (Pb−Free) 5000 Units / Bulk BC557BRL1 TO−92 2000 / Tape & Reel BC557BRL1G TO−92 (Pb−Free) 2000 / Tape & Reel BC557BZL1 TO−92 2000 / Ammo Box BC557BZL1G TO−92 (Pb−Free) 2000 / Ammo Box BC557C TO−92 5000 Units / Bulk BC557CG TO−92 (Pb−Free) 5000 Units / Bulk BC557CZL1 TO−92 2000 / Ammo Box BC557CZL1G TO−92 (Pb−Free) 2000 / Ammo Box BC558BRL TO−92 2000 / Tape & Reel BC558BRLG TO−92 (Pb−Free) 2000 / Tape & Reel BC558BRL1 TO−92 2000 / Tape & Reel BC558BRL1G TO−92 (Pb−Free) 2000 / Tape & Reel BC558BZL1 TO−92 2000 / Ammo Box BC558BZL1G TO−92 (Pb−Free) 2000 / Ammo Box BC558CZL1 TO−92 2000 / Ammo Box BC558CZL1G TO−92 (Pb−Free) 2000 / Ammo Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

BC558BRL1 Reviews

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Adri***** Nath

July 18, 2020

Heisener is awesome! Never any issues whatsoever. Product selection is good and delivery is on time.

Alfr*****Blake

July 17, 2020

I like this way to add a project, choose existing project to add components. I use this method frequently to keep track of my projects. Thanks Heisener!

Anast*****Handa

July 17, 2020

Very good, fast shipping, super reliable seller.

Quin*****ndrews

June 30, 2020

What I like was it was shipped fast and no damage.

Mais*****onrad

June 26, 2020

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Bon***** Fox

June 26, 2020

Heisener.com is a good company. Pleasant transaction, communicative , thank you

Walte*****nivas

June 25, 2020

Didn’t need so many but it was cheap. I did have to solder extra wire on each end to make fit better but exactly you need of your looking for this particular mod.

Alexi*****lahan

June 3, 2020

received with well packed and good parts, every piece of the BC558BRL1 works well.

Noe*****ine

June 2, 2020

Purchasing from Heisener means the real part is obtained no worried for product quality.

Hold*****alters

June 1, 2020

This product is very easy to replace and solved my problem.

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