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BSS138DW-7-F

hot BSS138DW-7-F

BSS138DW-7-F

For Reference Only

Part Number BSS138DW-7-F
Manufacturer Diodes Incorporated
Description MOSFET 2N-CH 50V 0.2A SC70-6
Datasheet BSS138DW-7-F Datasheet
Package 6-TSSOP, SC-88, SOT-363
In Stock 36502 piece(s)
Unit Price $ 0.1361 *
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BSS138DW-7-F

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BSS138DW-7-F Specifications

ManufacturerDiodes Incorporated
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Datasheet BSS138DW-7-F Datasheet
Package6-TSSOP, SC-88, SOT-363
Series-
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25��C200mA
Rds On (Max) @ Id, Vgs3.5 Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds50pF @ 10V
Power - Max200mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSOT-363

BSS138DW-7-F Datasheet

Page 1

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BSS138DW Document number: DS30203 Rev. 13 - 2 1 of 6 www.diodes.com January 2014 © Diodes Incorporated BSS138DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS RDS(ON) max ID max TA = +25°C 50V 3.5Ω @ VGS = 10V 200mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Load Switch Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Notes 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: SOT-363  Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208  Terminal Connections: See Diagram  Weight: 0.006 grams (approximate) Ordering Information (Note 4) Part Number Case Packaging BSS138DW-7-F SOT-363 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 Code S T U V W X Y Z A B C D E F G Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D SOT-363 TOP VIEW K38 K38 YM YM S1 D1 D2 S2 G1 G2 TOP VIEW Internal Schematic K38 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) K38 K38 YM YM

Page 3

BSS138DW Document number: DS30203 Rev. 13 - 2 2 of 6 www.diodes.com January 2014 © Diodes Incorporated BSS138DW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol BSS138DW Units Drain-Source Voltage VDSS 50 V Drain-Gate Voltage (Note 7) VDGR 50 V Gate-Source Voltage Continuous VGSS 20 V Drain Current (Note 5) Continuous ID 200 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol BSS138DW Units Total Power Dissipation (Note 5) PD 200 mW Thermal Resistance, Junction to Ambient RθJA 625 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS 50 75  V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS   0.5 µA VDS = 50V, VGS = 0V Gate-Body Leakage IGSS   100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) 0.5 1.2 1.5 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON)  1.4 3.5 Ω VGS = 10V, ID = 0.22A Forward Transconductance gFS 100   mS VDS =25V, ID = 0.2A, f = 1.0KHz DYNAMIC CHARACTERISTICS Input Capacitance Ciss   50 pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss   25 pF Reverse Transfer Capacitance Crss   8.0 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON)   20 ns VDD = 30V, ID = 0.2A, RGEN = 50Ω Turn-Off Delay Time tD(OFF)   20 ns Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 6. Short duration pulse test used to minimize self-heating effect. 7. RGS  20K.

Page 4

BSS138DW Document number: DS30203 Rev. 13 - 2 3 of 6 www.diodes.com January 2014 © Diodes Incorporated BSS138DW 0 0.1 0.2 0.3 0.4 0.5 0.6 10 32 54 76 8 9 10 I , D R A IN -S O U R C E C U R R E N T ( A ) D V , DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage DS T = 25 Cj ° V = 3.5VGS V = 3.25VGS V = 3.0VGS V = 2.75VGS V = 2.5VGS 0 V , GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics GS 0.1 0.2 0.3 0.5 0.4 0.6 0.7 0.8 0 1 1.50.5 2 3.5 4 4.52.5 3 I , D R A IN -S O U R C E C U R R E N T ( A ) D -55 C° 150 C° 25 C° V = 1VDS 0.65 T , JUNCTION TEMPERATURE (°C) Fig. 3 Drain-Source On Resistance vs. Junction Temperature j 0.85 1.05 1.25 1.65 1.45 1.85 2.05 2.25 2.45 -55 -5 45 95 145 V = 10VGS V = 4.5VGS I = 0.5AD I = 0.075AD R , N O R M A L IZ E D D R A IN -S O U R C E O N -R E S IS TA N C E ( ) D S (O N )  0 0.2 0.4 0.6 0.8 1 1.4 1.2 2 1.8 1.6 -55 -25 50 10075 V , G A T E T H R E S H O L D V O LT A G E ( V ) G S (t h ) T , JUNCTION TEMPERATURE (°C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature j 125250 150 0 I , DRAIN-CURRENT (A) Fig. 5 Drain-Source On-Resistance vs. Drain-Current D 1 2 3 4 5 6 7 8 0 0.02 0.04 0.06 0.08 0.160.140.120.1 150 C° -55 C° 25 C° V = 2.5VGS R , D R A IN -S O U R C E O N -R E S IS TA N C E ( ) D S (O N )  0 I , DRAIN-CURRENT (A) Fig. 6 Drain-Source On-Resistance vs. Drain-Current D 1 2 3 5 4 6 7 8 9 0 0.05 0.1 0.20.15 0.25 150 C° -55 C° 25 C° V = 2.75VGS R , D R A IN -S O U R C E O N -R E S IS TA N C E ( ) D S (O N ) 

Page 5

BSS138DW Document number: DS30203 Rev. 13 - 2 4 of 6 www.diodes.com January 2014 © Diodes Incorporated BSS138DW 0 1 2 3 4 5 6 0 0.5 I , DRAIN-CURRENT (A) Fig. 7 Drain-Source On-Resistance vs. Drain-Current D 150 C° -55 C° 25 C° V = 4.5VGS R , D R A IN -S O U R C E O N -R E S IS TA N C E ( ) D S (O N )  0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 I , DRAIN-CURRENT (A) Fig. 8 Drain-Source On-Resistance vs. Drain-Current D 150 C° -55 C° 25 C° V = 10VGS R , D R A IN -S O U R C E O N -R E S IS TA N C E ( ) D S (O N )  I , D IO D E C U R R E N T ( A ) D 0.001 0.01 0.1 1 V , DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage SD 0 0.2 0.4 0.6 0.8 1 1.2 150 C° -55 C° 25 C° C , C A P A C IT A N C E ( pF ) 1 10 100 V , DRAIN-SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain-Source Voltage DS 0 5 10 15 20 25 30 V = 0V f = 1MHz GS Crss Coss Ciss

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BSS138DW Document number: DS30203 Rev. 13 - 2 5 of 6 www.diodes.com January 2014 © Diodes Incorporated BSS138DW Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SOT363 Dim Min Max Typ A 0.10 0.30 0.25 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 Typ F 0.40 0.45 0.425 H 1.80 2.20 2.15 J 0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.22 0.11  0° 8° - All Dimensions in mm Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 A M J LD B C H K F X Z Y C1 C2C2 G

BSS138DW-7-F Reviews

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Sea*****enon

February 21, 2020

Always have what I need, fast and easy for making an order, fast shipping and great service! That about covers it! Many Thanks!

Journe*****iamson

December 1, 2019

I tested some and all look good.

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November 6, 2019

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November 2, 2019

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October 18, 2019

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October 8, 2019

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October 1, 2019

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Chan*****arin

September 27, 2019

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Kyle*****Wilson

August 22, 2019

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Mal*****Rojas

August 2, 2019

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