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BSS8402DW-7-F

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BSS8402DW-7-F

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Part Number BSS8402DW-7-F
Manufacturer Diodes Incorporated
Description MOSFET N/P-CH 60V/50V SC70-6
Datasheet BSS8402DW-7-F Datasheet
Package 6-TSSOP, SC-88, SOT-363
In Stock 354,962 piece(s)
Unit Price $ 0.1488 *
Lead Time Can Ship Immediately
Estimated Delivery Time Sep 29 - Oct 4 (Choose Expedited Shipping)
Request for Quotation

Part Number # BSS8402DW-7-F (Transistors - FETs, MOSFETs - Arrays) is manufactured by Diodes Incorporated and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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BSS8402DW-7-F Specifications

ManufacturerDiodes Incorporated
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Datasheet BSS8402DW-7-FDatasheet
Package6-TSSOP, SC-88, SOT-363
Series-
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V, 50V
Current - Continuous Drain (Id) @ 25°C115mA, 130mA
Rds On (Max) @ Id, Vgs7.5 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
Power - Max200mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSOT-363

BSS8402DW-7-F Datasheet

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BSS8402DW Document number: DS30380 Rev. 22 - 2 1 of 8 www.diodes.com March 2018 © Diodes Incorporated BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BVDSS RDS(ON) Max ID TA = +25°C Q1 60V 13.5Ω @ VGS = 10V 115mA Q2 -50V 10Ω @ VGS = -5V -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  General Purpose Interfacing Switch  Power Management Functions  Analog Switch Features and Benefits  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Complementary Pair  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Mechanical Data  Case: SOT363  Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208  Terminal Connections: See Diagram  Weight: 0.006 grams (Approximate) Ordering Information (Note 5) Part Number Compliance Case Packaging BSS8402DW-7-F Standard SOT363 3,000/Tape & Reel BSS8402DW-13-F Standard SOT363 10,000/Tape & Reel BSS8402DWQ-7 Automotive SOT363 3,000/Tape & Reel BSS8402DWQ-13 Automotive SOT363 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information Date Code Key Year 2003 2004 2005 2006 ~ 2018 2019 2020 2021 2022 2023 2024 2025 2026 Code P R S T ~ F G H I J K L M N Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D SOT363 Top View Top View Internal Schematic S2 D2 Q1 Q2 D1 S1 G2 G1 e3 KNP = Product Type Marking Code YM or YM= Date Code Marking Y or Y = Year (ex: F = 2018) M = Month (ex: 9 = September)

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BSS8402DW Document number: DS30380 Rev. 22 - 2 2 of 8 www.diodes.com March 2018 © Diodes Incorporated BSS8402DW Maximum Ratings – Total Device (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 6) PD 200 mW Thermal Resistance, Junction to Ambient RθJA 625 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Maximum Ratings N-CHANNEL – Q1, 2N7002 Section (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS  1.0MΩ VDGR 60 V Gate-Source Voltage Continuous Pulsed VGSS ±20 ±40 V Drain Current (Note 6) Continuous Continuous @ +100°C Pulsed ID 115 73 800 mA Maximum Ratings P-CHANNEL – Q2, BSS84 Section (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -50 V Drain-Gate Voltage RGS  20KΩ VDGR -50 V Gate-Source Voltage Continuous VGSS 20 V Drain Current (Note 6) Continuous ID -130 mA Note: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Incorporated’s suggested pad layout document, which can be found on our website at http://www.diodes.com/package-outlines.html.

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BSS8402DW Document number: DS30380 Rev. 22 - 2 3 of 8 www.diodes.com March 2018 © Diodes Incorporated BSS8402DW Electrical Characteristics N-CHANNEL – Q1, 2N7002 Section (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 70  V VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current @ TC = +25°C @ TC = +125°C IDSS   1.0 500 µA VDS = 60V, VGS = 0V Gate-Body Leakage IGSS   ±10 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 1.0  2.5 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance @ TJ = +25°C @ TJ = +125°C RDS(ON)  3.2 4.4 7.5 13.5 Ω VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A On-State Drain Current ID(ON) 0.5 1.0  A VGS = 10V, VDS = 7.5V Forward Transconductance gFS 80   mS VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS Input Capacitance Ciss  22 50 pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss  11 25 pF Reverse Transfer Capacitance Crss  2.0 5.0 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON)  7.0 20 ns VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω Turn-Off Delay Time tD(OFF)  11 20 ns Electrical Characteristics P-CHANNEL – Q2, BSS84 Section (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -50   V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS       -1 -2 -100 µA µA nA VDS = -50V, VGS = 0V, TJ = +25°C VDS = -50V, VGS = 0V, TJ = +125°C VDS = -25V, VGS = 0V, TJ = +25°C Gate-Body Leakage IGSS   10 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) -0.8  -2.0 V VDS = VGS, ID = -1mA Static Drain-Source On-Resistance RDS(ON)   10 Ω VGS = -5V, ID = -0.100A Forward Transconductance gFS 0.05   S VDS = -25V, ID = -0.1A DYNAMIC CHARACTERISTICS Input Capacitance Ciss   45 pF VDS = -25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss   25 pF Reverse Transfer Capacitance Crss   12 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON)  10  ns VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V Turn-Off Delay Time tD(OFF)  18  ns Note: 7. Short duration pulse test used to minimize self-heating effect.

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BSS8402DW Document number: DS30380 Rev. 22 - 2 4 of 8 www.diodes.com March 2018 © Diodes Incorporated BSS8402DW N-CHANNEL – 2N7002 Section 0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 V , DRAIN-SOURCE VOLTAGE (V) Figure 1 On-Region Characteristics DS I , D R A IN -S O U R C E C U R R E N T ( A ) D 0 1 2 3 4 5 0 0.2 I , DRAIN CURRENT (A) Figure 2 On-Resistance vs. Drain Current D T = 25 Cj ° 6 7 0.4 0.6 0.8 1.0 R , S T A T IC D R A IN -S O U R C E O N -R E S IS T A N C E ( ) D S (O N )  1.0 1.5 2.0 2.5 3.0 -55 -30 -5 20 45 70 95 120 145 T , JUNCTION TEMPERATURE ( C) Figure 3 On-Resistance vs. Junction Temperature J ° V = 10V, I GS D = 200mA R , S T A T IC D R A IN -S O U R C E O N -R E S IS T A N C E ( ) D S (O N )  0 V , GATE TO SOURCE VOLTAGE (V) Figure 4 On-Resistance vs. Gate-Source Voltage GS 1 2 3 4 5 6 0 2 4 6 8 10 12 14 16 18 R , S T A T IC D R A IN -S O U R C E O N -R E S IS T A N C E ( ) D S (O N )  0 2 1 4 3 0 0.2 0.4 0.6 0.8 1 V G A T E -S O U R C E C U R R E N T ( V ) G S , I , DRAIN CURRENT (A) Figure 5 Typical Transfer Characteristics D 6 5 8 7 10 9 V = 10VDS 0 50 100 150 200 250 0 25 50 75 100 125 150 175 200 P , P O W E R D IS S IP A T IO N ( m W ) D T , AMBIENT TEMPERATURE ( C) Figure 6 Max Power Dissipation vs. Ambient Temperature A °

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BSS8402DW Document number: DS30380 Rev. 22 - 2 5 of 8 www.diodes.com March 2018 © Diodes Incorporated BSS8402DW P-CHANNEL – BSS84 Section 0 -600 -500 -400 -300 -200 -100 0 -2-1 -5-4-3 I , D R A IN -S O U R C E C U R R E N T ( m A ) D V , DRAIN-SOURCE (V)DS Figure 9 Drain-Source Current vs. Drain-Source Voltage T = 25 CA ° -0.0 -1.0 -0.8 -0.6 -0.4 -0.2 0 -2 -3 -4-1 -8-7-6-5 I , D R A IN C U R R E N T ( A ) D V , GATE-TO-SOURCE VOLTAGE (V)GS Figure 10 Drain Current vs. Gate-Source Voltage V , G A T E T H R E S H O L D V O L T A G E ( V ) G S ( T H ) 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Junction Temperature J V G S (T H ), G A T E T H R E S H O L D V O L T A G E ( V ) V , DRAIN-SOURCE VOLTAGE (V) DS Figure 7 Typical Drain-Source Leakage Current vs. Voltage I , D R A I N L E A K A G E C U R R E N T ( n A ) D S S 1000 5 10 15 20 25 30 35 40 45 50 55 60 T = 25°C A T = 85°C A T = 125°C A T = 150°C A 100 10 1 I D S S , D R A IN L E A K A G E C U R R E N T ( n A ) 0 1 2 4 5 3 6 8 7 10 9 0 -1 -2 -3 -4 -5 V , GATE TO SOURCE (V) Figure 11 On-Resistance vs. Gate-Source Voltage GS T = 25 CA ° T = 125 CA ° R , S T A T IC D R A IN -S O U R C E O N -R E S IS T A N C E ( ) D S (O N )  0 3 6 9 12 15 -50 -25 0 25 50 12510075 150 T , JUNCTION TEMPERATURE (癈 ) Figure 12 On-Resistance vs. Junction Temperature J V = -10V I = -0.13A GS D R , O N -R E S IS T A N C E ( ) D S  VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) °C

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BSS8402DW Document number: DS30380 Rev. 22 - 2 6 of 8 www.diodes.com March 2018 © Diodes Incorporated BSS8402DW 0.0 5.0 10.0 -0.0 -0.2 -0.4 -0.6 -0.8 1.0 I , DRAIN CURRENT (A) Figure 13 On-Resistance vs. Drain Current D 15.0 20.0 25.0 V = -8V GS V = -10V GS V = -3V GS V = -3.5V GS V = -4V GS V = -6V GS V = -5V GS R , O N -R E S IS T A N C E ( ) D S  - V , G A T E T H R E S H O L D V O L T A G E ( V ) G S ( T H ) T , JUNCTION TEMPERATURE (°C) Figure 15 Gate Threshold Variation vs. Junction Temperature J 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 -V G S (T H ), G A T E T H R E S H O L D V O L T A G E ( V ) -V , DRAIN-SOURCE VOLTAGE (V) DS Figure 14 Typical Drain-Source Leakage Current vs. Voltage - I , D R A I N L E A K A G E C U R R E N T ( n A ) D S S 1000 5 10 15 20 25 30 35 40 45 50 T = 25°C A T = 85°C A T = 125°C A T = 150°C A 100 10 1 -I D S S , D R A IN L E A K A G E C U R R E N T ( n A )

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BSS8402DW Document number: DS30380 Rev. 22 - 2 7 of 8 www.diodes.com March 2018 © Diodes Incorporated BSS8402DW Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 SOT363 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 0.95 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 0° 8° -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 e D L E1 b E F A2 A1 c a Dimensions Value (in mm) C 0.650 G 1.300 X 0.420 Y 0.600 Y1 2.500 Y1 G Y X C

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Rodri*****rnett

August 21, 2020

Order arrived to Estonia in 3 days. Item as described. Well packed.

Lilia*****haman

August 20, 2020

Great seller, would recommend buying from. , good communication and problem solving

Nichola*****acharyya

August 19, 2020

Very effective shopping path, service steady as a rock, keep up the great work.

Kings*****hosla

August 12, 2020

Received the parts, and all parts are in tight packaging without any problems, professional seller.

Ell*****Meka

August 7, 2020

These function just as well. You do need to spend some time modifying the harness, but no big deal.

Arie*****Salvi

August 5, 2020

Great seller, item shipped quickly and in great packaging. I will come next time .

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August 5, 2020

Boundless range of products, ease of search and fast delivery continue to impress. Heisener is always my first stop for electronic components.

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August 1, 2020

I am very happy with how Heisener do business. Will definitely buy their products in the future as I have confidence in their customer service.

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July 10, 2020

Completely satisfied of BSS8402DW-7-F , I always find what I need. The site is easy to get the components .

Just*****utton

July 8, 2020

Very quick dispatch, arrived the next day. Item as described. Thanks!

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