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CA3127MZ

hot CA3127MZ

CA3127MZ

For Reference Only

Part Number CA3127MZ
Manufacturer Intersil
Description TRANSISTOR ARRAY NPN 16-SOIC
Datasheet CA3127MZ Datasheet
Package 16-SOIC (0.154", 3.90mm Width)
In Stock 30658 piece(s)
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Lead Time Can Ship Immediately
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CA3127MZ

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CA3127MZ Specifications

ManufacturerIntersil
CategoryDiscrete Semiconductor Products - Transistors - Bipolar (BJT) - RF
Datasheet CA3127MZ Datasheet
Package16-SOIC (0.154", 3.90mm Width)
Series-
Transistor Type5 NPN
Voltage - Collector Emitter Breakdown (Max)15V
Frequency - Transition1.15GHz
Noise Figure (dB Typ @ f)3.5dB @ 100MHz
Gain27dB ~ 30dB
Power - Max85mW
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 6V
Current - Collector (Ic) (Max)20mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case16-SOIC (0.154", 3.90mm Width)
Supplier Device Package16-SOIC

CA3127MZ Datasheet

Page 1

Page 2

FN662 Rev.5.00 Jun 5, 2006 CA3127 High Frequency NPN Transistor Array DATASHEETThe CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual transistors and a separate substrate connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors. Features • Gain Bandwidth Product (fT) . . . . . . . . . . . . . . . . . >1GHz • Power Gain . . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz • Noise Figure. . . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz • Five Independent Transistors on a Common Substrate • Pb-Free Plus Anneal Available (RoHS Compliant) Applications • VHF Amplifiers • Multifunction Combinations - RF/Mixer/Oscillator • Sense Amplifiers • Synchronous Detectors • VHF Mixers • IF Converter • IF Amplifiers • Synthesizers • Cascade Amplifiers Pinout CA3127 (SOIC) TOP VIEW Ordering Information PART NUMBER PART MARKING TEMP. RANGE (°C) PACKAGE PKG. DWG. # CA3127M CA3127 -55 to 125 16 Ld SOIC M16.15 CA3127MZ (Note) CA3127MZ -55 to 125 16 Ld SOIC (Pb-free) M16.15 NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 14 15 16 9 13 12 11 10 1 2 3 4 5 7 6 8 SUBSTRATE Q2 Q3 Q4 Q5 Q1FN662 Rev.5.00 Page 1 of 9 Jun 5, 2006

Page 3

CA3127Absolute Maximum Ratings Thermal Information The following ratings apply for each transistor in the device Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . .15V Collector-to-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . .20V Collector-to-Substrate Voltage, VCIO (Note 1) . . . . . . . . . . . . .20V Collector Current, IC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to 125°C Thermal Resistance (Typical, Note 2) JA (°C/W) SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 Maximum Power Dissipation, PD (Any One Transistor) . . . . .85mW Maximum Junction Temperature (Die). . . . . . . . . . . . . . . . . . . 175°C Maximum Junction Temperature (Plastic Packages). . . . . . . . 150°C Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C (SOIC - Lead Tips Only) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. The collector of each transistor of the CA3127 is isolated from the substrate by an integral diode. The substrate (Terminal 5) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. 2. JA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications TA = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNITS DC CHARACTERISTICS (For Each Transistor) Collector-to-Base Breakdown Voltage IC = 10A, IE = 0 20 32 - V Collector-to-Emitter Breakdown Voltage IC = 1mA, IB = 0 15 24 - V Collector-to-Substrate Breakdown-Voltage IC1 = 10A, IB = 0, IE = 0 20 60 - V Emitter-to-Base Breakdown Voltage (Note 3) IE = 10A, IC = 0 4 5.7 - V Collector-Cutoff-Current VCE = 10V IB = 0 - - 0.5 A Collector-Cutoff-Current VCB = 10V, IE = 0 - - 40 nA DC Forward-Current Transfer Ratio VCE = 6V IC = 5mA 35 88 - IC = 1mA 40 90 - IC = 0.1mA 35 85 - Base-to-Emitter Voltage VCE = 6V IC = 5mA 0.71 0.81 0.91 V IC = 1mA 0.66 0.76 0.86 V IC = 0.1mA 0.60 0.70 0.80 V Collector-to-Emitter Saturation Voltage IC = 10mA, IB = 1mA - 0.26 0.50 V Magnitude of Difference in VBE Q1 and Q2 Matched VCE = 6V, IC = 1mA - 0.5 5 mV Magnitude of Difference in IB - 0.2 3 A DYNAMIC CHARACTERISTICS Noise Figure f = 100kHz, RS = 500, IC = 1mA - 2.2 - dB Gain-Bandwidth Product VCE = 6V, IC = 5mA - 1.15 - GHz Collector-to-Base Capacitance VCB = 6V, f = 1MHz - See Fig. 5 - pF Collector-to-Substrate Capacitance VCI = 6V, f = 1MHz - - pF Emitter-to-Base Capacitance VBE = 4V, f = 1MHz - - pF Voltage Gain VCE = 6V, f = 10MHz, RL = 1k, IC = 1mA - 28 - dB Power Gain Cascode Configuration f = 100MHz, V+ = 12V, IC = 1mA 27 30 - dB Noise Figure - 3.5 - dBFN662 Rev.5.00 Page 2 of 9 Jun 5, 2006

Page 4

CA3127Test Circuits Input Resistance Common-Emitter Configuration VCE = 6V, IC = 1mA, f = 200 MHz - 400 -  Output Resistance - 4.6 - k Input Capacitance - 3.7 - pF Output Capacitance - 2 - pF Magnitude of Forward Transadmittance - 24 - mS NOTE: 3. When used as a zener for reference voltage, the device must not be subjected to more than 0.1mJ of energy from any possible capacitance or electrostatic discharge in order to prevent degradation of the junction. Maximum operating zener current should be less than 10mA. Electrical Specifications TA = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNITS FIGURE 1. VOLTAGE-GAIN TEST CIRCUIT USING CURRENT-MIRROR BIASING FOR Q2 FIGURE 2. 100MHz POWER-GAIN AND NOISE-FIGURE TEST CIRCUIT 7 8 4 2 3 6 GEN 10k BIAS-CURRENT ADJ V+ RL 470 0.01 1F VO Q2 0.01F 470pF 51 VI Q3 0.01 1F pF F F 470pF 1000 pF NOTES: 4. This circuit was chosen because it conveniently represents a close approximation in performance to a properly unilateralized single transistor of this type. The use of Q3 in a current-mirror configuration facilitates simplified biasing. The use of the cascode circuit in no way implies that the transistors cannot be used individually. 5. E.F. Johnson number 160-104-1 or equivalent. 4 3 2 13 12 14 6 7 5 8 SHIELD Q5 620 Q2 C1 1.8pF 0.3H1000pFVI OHMITE Z144 (NOTE 5) Q3 25k 1000 pF 1000 pF 560 750 1% 1000 pF 8.2 k 0.47H 1.5 - 8pF VO +12V C2 TEST POINT (NOTE 5)FN662 Rev.5.00 Page 3 of 9 Jun 5, 2006

Page 5

CA3127FIGURE 3A. POWER GAIN SET-UP FIGURE 3B. NOISE FIGURE SET-UP FIGURE 3. BLOCK DIAGRAMS OF POWER-GAIN AND NOISE-FIGURE TEST SET-UPS ATTN 100MHz BOONTON 91C RF VOLTMETER 12VDC POWER SUPPLY TEST SET GENERAL RADIO 1021-P1 100MHz GENERATOR 100MHz 100MHz NOISE FIGURE METER POST AMPLIFIER VHF NOISE SOURCE HEWLETT PACKARD HP343A TEST SET HEWLETT PACKARD HP342A 12VDC POWER SUPPLY 15VDC POWER SUPPLY Typical Performance Curves FIGURE 4. NOISE FIGURE vs COLLECTOR CURRENT FIGURE 5. NOISE FIGURE vs COLLECTOR CURRENT 30 20 10 0 N O IS E F IG U R E ( d B ) 0.01 0.1 1.0 COLLECTOR CURRENT (mA) TA = 25°C RSOURCE = 500 f = 10Hz f = 100Hz f = 1kHz f = 10kHz f = 100kHz VCE = 6V 30 20 10 0 N O IS E F IG U R E ( d B ) 0.01 0.1 1.0 COLLECTOR CURRENT (mA) f = 10Hz f = 100Hz f = 1kHz f = 10kHz f = 100kHz TA = 25°C RSOURCE = 1k VCE = 6VFN662 Rev.5.00 Page 4 of 9 Jun 5, 2006

Page 6

CA3127FIGURE 6. GAIN-BANDWIDTH PRODUCT vs COLLECTOR CURRENT FIGURE 7. BASE-TO-EMITTER VOLTAGE vs COLLECTOR CURRENT FIGURE 8A. CAPACITANCE vs BIAS VOLTAGE FOR Q2 FIGURE 8B. TYPICAL CAPACITANCE VALUES AT f = 1MHz. THREE TERMINAL MEASUREMENT. GUARD ALL TERMINALS EXCEPT THOSE UNDER TEST. Typical Performance Curves (Continued) TA = 25°C VCE = 6V G A IN -B A N D W ID T H P R O D U C T ( G H z) 1.2 1.1 1.0 0.9 0.8 1 2 3 4 5 6 7 8 9 10 COLLECTOR CURRENT (mA) 0 B A S E -T O -E M IT T E R V O LT A G E ( V ) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.1 COLLECTOR CURRENT (mA) 1 10 TA = 25°C TA = -55°C TA = 125°C C A P A C IT A N C E ( p F ) BIAS VOLTAGE (V) 2.25 1.25 1.00 0.75 0.50 0.25 0 1 2 3 4 5 6 7 8 9 10 CCB CCI CEB TA = 25°C f = 1MHz 1.50 1.75 2.00 CAPACITANCE (pF) CCB CCE CEB CCI TRAN- SISTOR PKG TOTAL PKG TOTAL PKG TOTAL PKG TOTAL BIAS (V) - 6V - 6V - 4V - 6V Q1 0.025 0.190 0.090 0.125 0.365 0.610 0.475 1.65 Q2 0.015 0.170 0.225 0.265 0.130 0.360 0.085 1.35 Q3 0.040 0.200 0.215 0.240 0.360 0.625 0.210 1.40 Q4 0.040 0.190 0.225 0.270 0.365 0.610 0.085 1.25 Q5 0.010 0.165 0.095 0.115 0.140 0.365 0.090 1.35FN662 Rev.5.00 Page 5 of 9 Jun 5, 2006

Page 7

CA3127FIGURE 9. VOLTAGE GAIN vs FREQUENCY FIGURE 10. VOLTAGE GAIN vs FREQUENCY FIGURE 11. DC FORWARD-CURRENT TRANSFER RATIO (hFE) vs COLLECTOR CURRENT FIGURE 12. INPUT ADMITTANCE (Y11) vs FREQUENCY Typical Performance Curves (Continued) TA = 25°C, VCE = 6V, RL = 100 FOR TEST CIRCUIT SEE FIGURE 19 V O LT A G E G A IN ( d B ) FREQUENCY (Hz) IC = 0.2mA IC = 0.5mA IC = 1mA IC = 5mA 40 35 30 25 20 15 10 5 0 -5 -10 1M 10M 100M 1G V O LT A G E G A IN ( d B ) FREQUENCY (Hz) IC = 0.2mA IC = 0.5mA IC = 1mA IC = 5mA 40 35 30 25 20 15 10 5 0 -5 -10 1M 10M 100M 1G TA = 25°C, VCE = 6V, RL = 1k FOR TEST CIRCUIT SEE FIGURE 19 D C F O R W A R D C U R R E N T T R A N S F E R R A T IO 100 90 80 70 60 50 0.1 1.0 10 COLLECTOR CURRENT (mA) 40 TA = 25°C VCE = 6V IN P U T C O N D U C TA N C E ( g 11 ) O R S U S C E P TA N C E ( b 11 ) (m S ) FREQUENCY (Hz) b11 g11 8 7 6 5 4 3 2 1 0 100M 1G TA = 25°C, VCE = 6V, IC = 1mAFN662 Rev.5.00 Page 6 of 9 Jun 5, 2006

Page 8

CA3127FIGURE 13. INPUT ADMITTANCE (Y11) vs COLLECTOR CURRENT FIGURE 14. OUTPUT ADMITTANCE (Y22) vs FREQUENCY FIGURE 15. OUTPUT ADMITTANCE (Y22) vs COLLECTOR CURRENT FIGURE 16. FORWARD TRANSADMITTANCE (Y21) vs COLLECTOR CURRENT Typical Performance Curves (Continued) IN P U T C O N D U C TA N C E ( g 11 ) O R S U S C E P TA N C E ( b 11 ) (m S ) b11 g118 7 6 5 4 3 2 1 0 1 100 2 3 4 5 6 7 8 9 TA = 25°C VCE = 6V f = 200MHz 9 COLLECTOR CURRENT (mA) O U T P U T C O N D U C TA N C E ( g 2 2) ( m S ) O U T P U T S U S C E P TA N C E ( b 22 ) (m S ) TA = 25°C VCE = 6V IC = 1mA 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 100M 8 7 6 5 4 3 2 1 0 1G FREQUENCY (Hz) b22 g22 O U T P U T C O N D U C TA N C E ( g 22 ) (m S ) b22 g22 0.375 0.350 0.325 0.300 0.275 0.250 0.225 0.200 0.175 1 100 2 3 4 5 6 7 8 9 TA = 25°C VCE = 6V f = 200MHz 0.400 COLLECTOR CURRENT (mA) 2.7 2.6 2.5 2.4 2.3 2.2 2.1 2.0 1.9 2.8 O U T P U T S U S C E P TA N C E ( b 22 ) (m S ) 11 12 M A G N IT U D E O F F O R W A R D 21 80 60 40 20 1 100 2 3 4 5 6 7 8 9 TA = 25°C VCE = 6V f = 200MHz COLLECTOR CURRENT (mA) T R A N S A D M IT TA N C E ( |Y 21 |) ( m S ) P H A S E -A N G L E O F F O R W A R D T R A N S A D M IT TA N C E ( | 21 |) ( °) 100 |Y21| 11 12 -20 -40 -60 -80 -100 0 FN662 Rev.5.00 Page 7 of 9 Jun 5, 2006

Page 9

CA3127FIGURE 17. FORWARD TRANSADMITTANCE (Y21) vs FREQUENCY FIGURE 18. REVERSE TRANSADMITTANCE (Y12) vs COLLECTOR CURRENT FIGURE 19. REVERSE TRANSADMITTANCE (Y12) vs FREQUENCY Typical Performance Curves (Continued) M A G N IT U D E O F F O R W A R D |Y21| 21 30 20 10 0 1G100M TA = 25°C VCE = 6V IC = 1mA -20 -30 -40 -50 -60 -70 -80 -90 -100 -10 T R A N S A D M IT TA N C E ( |Y 21 |) ( m S ) P H A S E -A N G L E O F F O R W A R D T R A N S A D M IT TA N C E ( | 21 |) ( °) FREQUENCY (Hz) 150M 200M M A G N IT U D E O F R E V E R S E 12 0.21 1 100 2 3 4 5 6 7 8 9 TA = 25°C VCE = 6V f = 200MHz -110 -120 -130 -140 -150 -80 T R A N S A D M IT TA N C E ( |Y 12 |) ( m S ) P H A S E -A N G L E O F R E V E R S E T R A N S A D M IT TA N C E ( | 1 2| ) (° ) |Y12| -100 -90 COLLECTOR CURRENT (mA) 11 12 M A G N IT U D E O F R E V E R S E 12 0 1G100M TA = 25°C VCE = 6V IC = 1mA 0.4 0.3 0.2 -115 -120T R A N S A D M IT TA N C E ( |Y 12 |) ( m S ) P H A S E -A N G L E O F R E V E R S E T R A N S A D M IT TA N C E ( | 12 |) ( °) |Y12| 0.5 0.6 0.1 -100 -105 -110 -95 -90 FREQUENCY (Hz)FN662 Rev.5.00 Page 8 of 9 Jun 5, 2006

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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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