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FAN73833MX

hot FAN73833MX

FAN73833MX

For Reference Only

Part Number FAN73833MX
Manufacturer ON Semiconductor
Description IC HALF BRIDGE GATE DRIVER 8-SOP
Datasheet FAN73833MX Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 9066 piece(s)
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FAN73833MX Specifications

ManufacturerON Semiconductor
CategoryIntegrated Circuits (ICs) - PMIC - Gate Drivers
Datasheet FAN73833MX Datasheet
Package8-SOIC (0.154", 3.90mm Width)
Series-
Driven ConfigurationHalf-Bridge
Channel TypeIndependent
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Voltage - Supply11 V ~ 20 V
Logic Voltage - VIL, VIH1.2V, 2.5V
Current - Peak Output (Source, Sink)350mA, 650mA
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)600V
Rise / Fall Time (Typ)50ns, 30ns
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

FAN73833MX Datasheet

Page 1

Page 2

To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

Page 3

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com F A N 73833 — H alf-B rid g e G ate-D rive IC FAN73833 • Rev. 1.0.2 October 2012 FAN73833 Half-Bridge Gate-Drive IC Features  Floating Channel for Bootstrap Operation to +600V  Typically 350 mA / 650 mA Sourcing/Sinking Current Driving Capability for Both Channels  Extended Allowable Negative VS Swing to -9.8 V for Signal Propagation at VDD=VBS=15 V  3.3 V and 5 V Input Logic Compatible  Outputs in Phase with Input Signals  Built-in UVLO Functions for Both Channels  Built-on Shoot-Through Prevention Circuit  Built-in Common-Mode dv/dt Noise Canceling Circuit  Internal Dead-Time Typically 400 ns Applications  SMPS  Motor Drive Inverter  Fluorescent Lamp Ballast  HID Ballast Description The FAN73833 is a half-bridge gate-drive IC for driving MOSFETs and IGBTs, operating up to +600 V. Fairchild’s high-voltage process and common-mode noise canceling technique provide stable operation of high-side driver under high dv/dt noise circumstances. An advanced level-shift circuit allows high-side gate driver operation up to VS=-9.8 V (typical) for VBS=15 V. The UVLO circuits for both channels prevent malfunction when VDD and VBS are lower than the specified thresh- old voltage. Output drivers typically source/sink 350 mA / 650 mA, respectively, which is suitable for all kinds of half- and full-bridge inverters. Ordering Information 8-SOP Part Number Package Operating Temperature Range Packing Method FAN73833M 8-SOP -40°C to +125°C Tube FAN73833MX Tape & Reel

Page 4

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN73833 • Rev.1.0.2 2 F A N 73833 — H alf-B rid g e G ate-D rive IC Typical Application Circuit Figure 1. Application Circuit for Half-Bridge Internal Block Diagram Figure 2. Functional Block Diagram VDD 1 3 2 VDD LO VB VS HO COM LIN 4 8 5 6 7 DBOOT CBOOT HIN RBOOT Up to 600V LIN HIN Load HIN VDD COM LO VB HO VS UVLO D R IV E R P U L S E G E N E R A T O R 1 3 4 8 6 R R S Q D R IV E R HS(ON/OFF) LS(ON/OFF) DELAY UVLO2 SCHMITT TRIGGER INPUT SHOOT-THROUGH PREVENTION DEAD-TIME { 400ns } NOISE CANCELLER 5 100K 100K 7 LIN

Page 5

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN73833 • Rev.1.0.2 3 F A N 73833 — H alf-B rid g e G ate-D rive IC Pin Configuration Figure 3. Pin Configuration (Top View) Pin Definitions Pin # Name Description 1 LIN Logic Input for Low-Side Driver 2 HIN Logic Input for High-Side Driver 3 VDD Low-Side Supply Voltage 4 COM Logic Ground and Low-Side Driver Return 5 LO Low-Side Driver Output 6 VS High-Side Floating Supply Return 7 HO High-Side Driver Output 8 VB High-Side Floating Supply LO LIN VS HO VB COM 1 2 3 4 8 7 6 5 F A N 73833 HIN VDD

Page 6

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN73833 • Rev.1.0.2 4 F A N 73833 — H alf-B rid g e G ate-D rive IC Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA=25°C, unless otherwise specified. Notes: 1. Mounted on 76.2 x 114.3 x 1.6 mm PCB (FR-4 glass epoxy material). 2. Refer to the following standards: JESD51-2: Integral circuits thermal test method environmental conditions - natural convection JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages 3. Do not exceed PD under any circumstances. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol Parameter Min. Max. Unit VS High-side offset voltage VB-25 VB+0.3 V VB High-side floating supply voltage -0.3 625 V VHO High-side floating output voltage HO VS-0.3 VB+0.3 V VDD Low-side and logic-fixed supply voltage -0.3 25 V VLO Low-side output voltage LO -0.3 VDD+0.3 V VIN Logic input voltage (HIN/LIN) -0.3 VDD+0.3 V COM Logic ground and low-side driver return VDD-25 VDD+0.3 V dVS/dt Allowable offset voltage slew rate 50 V/ns PD (1)(2)(3) Power dissipation 0.625 W JA Thermal resistance, junction-to-ambient 200 C/W TJ Junction temperature 150 C TSTG Storage temperature -55 150 C Symbol Parameter Min. Max. Unit VB High-side floating supply voltage VS+11 VS+20 V VS High-side floating supply offset voltage 6-VDD 600 V VDD Low-side supply voltage 11 20 V VHO High-side (HO) output voltage VS VB V VLO Low-side (LO) output voltage COM VDD V VIN Logic input voltage (HIN/LIN) COM VDD V TA Ambient temperature -40 125 C

Page 7

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN73833 • Rev.1.0.2 5 F A N 73833 — H alf-B rid g e G ate-D rive IC Electrical Characteristics VBIAS (VDD, VBS) = 15.0 V, andTA=25C, unless otherwise specified. The VIN and IIN parameters are referenced to COM. The VO and IO parameters are referenced to VS and COM and are applicable to respective outputs HO and LO. Note: 4. This parameter is guaranteed by design. Symbol Parameter Condition Min. Typ. Max. Unit SUPPLY CURRENT SECTION IQBS Quiescent VBS supply current VIN=0 V or 5 V 35 100 µA IQDD Quiescent VDD supply current VIN=0 V or 5 V 80 200 µA IPBS Operating VBS supply current fIN=20 kHz, rms value 420 750 µA IPDD Operating VDD supply current fIN=20 kHz, rms value 420 750 µA ILK Offset supply leakage current VB=VS=600 V 10 µA POWER SUPPLY SECTION VDDUV+ VBSUV+ VDD and VBS supply under-voltage  positive going threshold 8.2 9.2 10.1 V VDDUV- VBSUV- VDD and VBS supply under-voltage  negative going threshold 7.2 8.3 9.2 V VDDUVH VBSUVH VDD supply under-voltage lockout  hysteresis 0.9 V GATE DRIVER OUTPUT SECTION VOH High-level output voltage, VBIAS-VO IO=20 mA 1.0 V VOL Low-level output voltage, VO 0.6 V IO+ (4) Output high short-circuit pulse current VO=0 V, VIN=5 V with PW<10 µs 250 350 mA IO- (4) Output low short-circuit pulsed current VO=15 V, VIN=0 V with PW<10 µs 500 650 mA VS Allowable negative VS pin voltage for IN signal propagation to HO -9.8 -7.0 V LOGIC INPUT SECTION (INPUT and SHUTDOWN) VIH Logic "1" input voltage 2.5 V VIL Logic "0" input voltage 1.2 V IIN+ Logic "1" input bias current VIN=5 V 50 100 µA IIN- Logic "0" input bias current VIN=0 V 2.0 µA RPD Input pull-down resistance 100 K

Page 8

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN73833 • Rev.1.0.2 6 F A N 73833 — H alf-B rid g e G ate-D rive IC Dynamic Electrical Characteristics VBIAS (VDD, VBS)=15.0 V, VS=COM, CL=1000 pF, and TA = 25C, unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit tON Turn-on propagation delay time VS=0 V 150 270 ns tOFF Turn-off propagation delay time VS=0 V 140 250 ns tR Turn-on rising time 50 100 ns tF Turn-off falling time 30 80 ns DT Dead-time 330 450 580 ns

Page 9

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN73833 • Rev.1.0.2 7 F A N 73833 — H alf-B rid g e G ate-D rive IC Typical Characteristics Figure 4. Turn-on Propagation Delay vs. Temp. Figure 5. Turn-off Propagation Delay vs. Temp. Figure 6. Turn-on Rise Time vs. Temp. Figure 7. Turn-off Fall Time vs. Temp. Figure 8. Dead Time vs. Temp. Figure 9. Logic Input High Bias Current vs. Temp. -40 -20 0 20 40 60 80 100 120 0 50 100 150 200 250 300 t O N [n s] Temperature [°C] -40 -20 0 20 40 60 80 100 120 0 50 100 150 200 250 300 t O F F [n s] Temperature [°C] -40 -20 0 20 40 60 80 100 120 0 20 40 60 80 100 120 t R [n s] Temperature [°C] -40 -20 0 20 40 60 80 100 120 0 20 40 60 80 t F [n s] Temperature [°C] -40 -20 0 20 40 60 80 100 120 200 300 400 500 600 700 D T [n s] Temperature [°C] -40 -20 0 20 40 60 80 100 120 0 20 40 60 80 100 I IN + [ A ] Temperature [°C]

Page 10

F A N 73 833 — H alf-B rid g e G ate-D riv e IC © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN73833 • Rev. 1.0.2 8 Typical Characteristics (Continued) Figure 10. Quiescent VDD Supply Current vs. Temp. Figure 11. Quiescent VBS Supply Current vs. Temp. Figure 12. Operating VDD Supply Current vs. Temp. Figure 13. Operating VBS Supply Current vs. Temp. Figure 14. VDD UVLO+ vs. Temp. Figure 15. VDD UVLO- vs. Temp. -40 -20 0 20 40 60 80 100 120 0 40 80 120 160 200 I Q D D [ A ] Temperature [°C] -40 -20 0 20 40 60 80 100 120 0 20 40 60 80 100 I Q B S [ A ] Temperature [°C] -40 -20 0 20 40 60 80 100 120 0 150 300 450 600 750 I P D D [ A ] Temperature [°C] -40 -20 0 20 40 60 80 100 120 0 150 300 450 600 750 I P B S [ A ] Temperature [°C] -40 -20 0 20 40 60 80 100 120 8.4 8.8 9.2 9.6 10.0 V D D U V + [V ] Temperature [°C] -40 -20 0 20 40 60 80 100 120 7.2 7.6 8.0 8.4 8.8 9.2 V D D U V - [ V ] Temperature [°C]

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