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FJYF2906TF

hot FJYF2906TF

FJYF2906TF

For Reference Only

Part Number FJYF2906TF
Manufacturer Fairchild/ON Semiconductor
Description TRANS PNP 40V 0.15A SOT563F
Datasheet FJYF2906TF Datasheet
Package SOT-563, SOT-666
In Stock 20724 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Feb 23 - Feb 28 (Choose Expedited Shipping)
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FJYF2906TF

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  • To learn about the specification of FJYF2906TF, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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FJYF2906TF Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
Datasheet FJYF2906TF Datasheet
PackageSOT-563, SOT-666
Series-
Transistor TypePNP
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)40V
Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Power - Max150mW
Frequency - Transition250MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563F

FJYF2906TF Datasheet

Page 1

Page 2

©2002 Fairchild Semiconductor Corporation Rev. A1, September 2002 F J Y F 2 90 6 Absolute Maximum Ratings TA=25°C unless otherwise noted Electrical Characteristics TA=25°C unless otherwise noted * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0% NOTE: All voltage (V) and currents (A) are negative for PNP transistors. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous 150 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 °C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BVCEO Collector-Emitter Breakdown Voltage IC = 1MA, IB = 0 40 V BVCBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 40 V BVEBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5 V ICEX Collector Cut-off Current VCE = 30V, VBE = 3V 50 NA On Characteristics hFE DC Current Gain * VCE = 1V, IC = 0.1MA VCE = 1V, IC = 1mA VCE = 1V, IC = 10mA VCE = 1V, IC = 50mA VCE = 1V, IC = 100mA 60 80 100 60 30 300 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA 0.3 0.5 V V VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA 0.65 0.95 1 V V Small Signal Characteristics fT Current gain Bandwidth Product VCE = 20V, IC = 10mA f = 100MHz 250 MHz Cobo Output Capacitance VCB = 5V, IE = 0, f = 1MHz 4.5 pF Cibo Input Capacitance VEB = 0.5V, IC = 0, f = 1MHz 10 pF FJYF2906 PNP Multi-Chip General Purpose Amplifier • Collector-Emitter Voltage: VCEO = 40V • Amplifier and Switching Application • E2 is on pin 1 E2 B2 B1 C2 E1 C1 SOT-563F Mark: S1 (Pin1)

Page 3

©2002 Fairchild Semiconductor Corporation F J Y F 2 90 6 Rev. A1, September 2002 Thermal Characteristics TA=25°C unless otherwise noted Symbol Parameter FJYF2906 Units PD Total Device Dissipation Derate above 25°C 150 1.2 mW mW/°C RθJA Thermal Resistance, Junction to Ambient 833 °C/W

Page 4

©2002 Fairchild Semiconductor Corporation F J Y F 2 90 6 Rev. A1, September 2002 Typical Characteristics Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage Figure 5. Collector Output Capacitance 1 10 100 1000 10 100 1000 Ta=125 0 C Ta=25 0 C Ta=-40 0 C VCE=-1V h F E , D C C U R R E N T G A IN IC[mA], COLLECTOR CURRENT -1 -10 -100 -0.01 -0.1 -1 Ta=125 0 C Ta=25 0 C Ta=-40 0 C IC=10IB V C E (S A T )[ V ], S A T U R A T IO N V O LT A G E I C [mA], COLLECTOR CURRENT 1 10 100 0.1 1 I C =10I B Ta=125 0 C Ta=25 0 C Ta=-40 0 C V B E (S A T )[ V ], S A T U R A T IO N V O LT A G E I C [mA], COLLECTOR CURRENT -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -20 -40 -60 -80 -100 -120 0 25 0 CTa=125 0 C -40 0 C V CE =-1V I C [m A ], C O LL E C T O R C U R R E N T V BE [V], BASE-EMITTER VOLTAGE -1 -10 -100 0 2 4 6 8 10 I E =0, f=1MHz C ob [p F ], O U T P U T C A P A C IT A N C E V CB [V], COLLECTOR-BASE VOLTAGE

Page 5

Package Dimensions F J Y F 2 90 6 SOT-563F Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A1, September 2002

FJYF2906TF Reviews

Average User Rating
5 / 5 (164)
★ ★ ★ ★ ★
5 ★
148
4 ★
16
3 ★
0
2 ★
0
1 ★
0

Zah*****Bates

September 19, 2019

Fast shipping, items are exactly as promised. Reliable company to work with.

Layl*****ltran

August 23, 2019

Excellent shopping cart process, various of products for selection and order fulfillment a good service quality. I rely on them heavily.

Malc*****Taylor

April 11, 2019

Very happy for the fast shipping and good price!

Ashl*****lake

March 31, 2019

Great price. Worked well for my needs.

Lilli*****Lyons

March 6, 2019

Excellent company. Product as described. Usually fast and well packed.Very nice.

Marl*****Steele

December 4, 2018

Very much appreciate the thoughtful system to hold multiple orders, including back ordered items, can be shipped at once rather than incremental shipments.

Ra*****Bali

November 15, 2018

I'm so sure that you're beating your competitor on delivery!

Jagg*****athe

November 9, 2018

Absolutely awesome, quick delivery, perfect product exactly as described!

Maken*****rayan

November 7, 2018

They worked as I expected. I'll definitely purchase again. Thank you!

Vero***** Trejo

June 3, 2018

Great condition, super kind person, quick shipping! and great price too!

FJYF2906TF Guarantees

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