Page 1
Page 2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 1
Rev. G
06/02/2014
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest
version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
1M x 16 HIGH-SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY JUNE 2014
FEATURES
• High-speed access times:
8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater
noise immunity
• Easy memory expansion with CE and OE op-
tions
• CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single power supply
Vdd 1.65V to 2.2V (IS61WV102416ALL)
speed = 20ns for Vdd 1.65V to 2.2V
Vdd 2.4V to 3.6V (IS61/64WV102416BLL)
speed = 10ns for Vdd 2.4V to 3.6V
speed = 8ns for Vdd 3.3V + 5%
• Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 48-pin TSOP (Type I)
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ISSI IS61WV102416ALL/BLL and IS64WV102416BLL
are high-speed, 16M-bit static RAMs organized as 1024K
words by 16 bits. It is fabricated using ISSI's high-perfor-
mance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields
high-performance and low power consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be re-
duced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The device is packaged in the JEDEC standard 48-pin
TSOP Type I and 48-pin Mini BGA (9mm x 11mm).
A0-A19
CE
OE
WE
1024K x 16
MEMORY ARRAYDECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
UB
LB
Page 3
2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
PIN DESCRIPTIONS
A0-A19 Address Inputs
I/O0-I/O15 Data Inputs/Outputs
CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input
LB Lower-byte Control (I/O0-I/O7)
UB Upper-byte Control (I/O8-I/O15)
NC No Connection
Vdd Power
GND Ground
48-pin mini BGA (9mmx11mm)
1 2 3 4 5 6
A
B
C
D
E
F
G
H
LB OE A0 A1 A2 NC
I/O8 UB A3 A4 CE I/O0
I/O9 I/O10 A5 A6 I/O1 I/O2
GND I/O11 A17 A7 I/O3 VDD
VDD I/O12 NC A16 I/O4 GND
I/O14 I/O13 A14 A15 I/O5 I/O6
I/O15 A19 A12 A13 WE I/O7
A18 A8 A9 A10 A11 NC
Page 4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 3
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
PIN DESCRIPTIONS
A0-A19 Address Inputs
I/O0-I/O15 Data Inputs/Outputs
CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input
LB Lower-byte Control (I/O0-I/O7)
UB Upper-byte Control (I/O8-I/O15)
NC No Connection
Vdd Power
GND Ground
48-pin TSOP-I (12mm x 20mm)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A4
A3
A2
A1
A0
NC
CE
I/O0
I/O1
I/O2
I/O3
VDD
GND
I/O4
I/O5
I/O6
I/O7
WE
NC
A19
A18
A17
A16
A15
A5
A6
A7
A8
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
VDD
I/O11
I/O10
I/O9
I/O8
NC
A9
A10
A11
A12
A13
A14
Page 5
4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter Value Unit
Vterm Terminal Voltage with Respect to GND –0.5 to Vdd + 0.5 V
Vdd Vdd Relates to GND –0.3 to 4.0 V
tstg Storage Temperature –65 to +150 °C
Pt Power Dissipation 1.0 W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol Parameter Conditions Max. Unit
Cin Input Capacitance Vin = 0V 6 pF
Ci/O Input/Output Capacitance VOut = 0V 8 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: Ta = 25°C, f = 1 MHz, Vdd = 3.3V.
TRUTH TABLE
I/O PIN
Mode WE CE OE LB UB I/O0-I/O7 I/O8-I/O15 VDD Current
Not Selected X H X X X High-Z High-Z isb1, isb2
Output Disabled H L H X X High-Z High-Z iCC
X L X H H High-Z High-Z
Read H L L L H dOut High-Z iCC
H L L H L High-Z dOut
H L L L L dOut dOut
Write L L X L H din High-Z iCC
L L X H L High-Z din
L L X L L din din
Page 6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 5
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
OPERATING RANGE (VDD) (IS61WV102416BLL)(1)
Range Ambient Temperature VDD (8 nS) VDD (10 nS)
Commercial 0°C to +70°C 3.3V + 5% 2.4V-3.6V
Industrial –40°C to +85°C 3.3V + 5% 2.4V-3.6V
Note:
1. When operated in the range of 2.4V-3.6V, the device meets 10ns. When operated in the range of
3.3V + 5%, the device meets 8ns.
OPERATING RANGE (VDD) (IS64WV102416BLL)
Range Ambient Temperature VDD (10 nS)
Automotive –40°C to +125°C 2.4V-3.6V
OPERATING RANGE (VDD) (IS61WV102416ALL)
Range Ambient Temperature VDD (20 nS)
Commercial 0°C to +70°C 1.65V-2.2V
Industrial –40°C to +85°C 1.65V-2.2V
Automotive –40°C to +125°C 1.65V-2.2V
Page 7
6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 2.4V-3.6V
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage Vdd = Min., iOH = –1.0 mA 1.8 — V
VOL Output LOW Voltage Vdd = Min., iOL = 1.0 mA — 0.4 V
ViH Input HIGH Voltage 2.0 Vdd + 0.3 V
ViL Input LOW Voltage(1) –0.3 0.8 V
iLi Input Leakage GND ≤ Vin ≤ Vdd –1 1 µA
iLO Output Leakage GND ≤ VOut ≤ Vdd, Outputs Disabled –1 1 µA
Note:
1. ViL (min.) = –0.3V DC; ViL (min.) = –2.0V AC (pulse width 2.0 ns). Not 100% tested.
ViH (max.) = Vdd + 0.3V dC; ViH (max.) = Vdd + 2.0V aC (pulse width 2.0 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 3.3V + 5%
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage Vdd = Min., iOH = –4.0 mA 2.4 — V
VOL Output LOW Voltage Vdd = Min., iOL = 8.0 mA — 0.4 V
ViH Input HIGH Voltage 2 Vdd + 0.3 V
ViL Input LOW Voltage(1) –0.3 0.8 V
iLi Input Leakage GND ≤ Vin ≤ Vdd –1 1 µA
iLO Output Leakage GND ≤ VOut ≤ Vdd, Outputs Disabled –1 1 µA
Note:
1. ViL (min.) = –0.3V DC; ViL (min.) = –2.0V AC (pulse width 2.0 ns). Not 100% tested.
ViH (max.) = Vdd + 0.3V dC; ViH (max.) = Vdd + 2.0V aC (pulse width 2.0 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 1.65V-2.2V
Symbol Parameter Test Conditions VDD Min. Max. Unit
VOH Output HIGH Voltage iOH = -0.1 mA 1.65-2.2V 1.4 — V
VOL Output LOW Voltage iOL = 0.1 mA 1.65-2.2V — 0.2 V
ViH Input HIGH Voltage 1.65-2.2V 1.4 Vdd + 0.2 V
ViL(1) Input LOW Voltage 1.65-2.2V –0.2 0.4 V
iLi Input Leakage GND ≤ Vin ≤ Vdd –1 1 µA
iLO Output Leakage GND ≤ VOut ≤ Vdd, Outputs Disabled –1 1 µA
Notes:
1. ViL (min.) = –0.3V dC; ViL (min.) = –2.0V AC (pulse width -2.0ns). Not 100% tested.
ViH (max.) = Vdd + 0.3V dC; ViH (max.) = Vdd + 2.0V AC (pulse width -2.0ns). Not 100% tested.
Page 8
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 7
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
AC TEST LOADS
Figure 1.
319 Ω
5 pF
Including
jig and
scope
353 Ω
OUTPUT
3.3V
Figure 2.
ZO = 50Ω
1.5V
50Ω
OUTPUT
30 pF
Including
jig and
scope
AC TEST CONDITIONS (HIGH SPEED)
Parameter Unit Unit Unit
(2.4V-3.6V) (3.3V + 5%) (1.65V-2.2V)
Input Pulse Level 0.4V to Vdd-0.3V 0.4V to Vdd-0.3V 0.4V to Vdd-0.2V
Input Rise and Fall Times 1.5ns 1.5ns 1.5ns
Input and Output Timing Vdd/2 Vdd/2 + 0.05 Vdd/2
and Reference Level (VRef)
Output Load See Figures 1 and 2 See Figures 1 and 2 See Figures 1 and 2
Page 9
8 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-8 -10 -20
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Unit
iCC Vdd Dynamic Operating Vdd = Max., Com. — 110 — 90 — 50 mA
Supply Current iOut = 0 mA, f = fmaX Ind. — 115 — 95 — 60
Vin = 0.4V or Vdd –0.3V Auto. — — — 140 — 100
typ.(2) 60
iCC1 Operating Vdd = Max., Com. — 85 — 85 — 45 mA
Supply Current iOut = 0 mA, f = 0 Ind. — 90 — 90 — 55
Vin = 0.4V or Vdd –0.3V Auto. — — — 110 — 90
isb1 TTL Standby Current Vdd = Max., Com. — 30 — 30 — 30 mA
(TTL Inputs) Vin = ViH or ViL Ind. — 35 — 35 — 35
CE ≥ ViH, f = 0 Auto. — — — 70 — 70
isb2 CMOS Standby Vdd = Max., Com. — 20 — 20 — 20 mA
Current (CMOS Inputs) CE ≥ Vdd – 0.2V, Ind. — 25 — 25 — 25
Vin ≥ Vdd – 0.2V, or Auto. — — — 60 — 60
Vin ≤ 0.2V, f = 0 typ.(2) 4
Note:
1. At f = fmaX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at Vdd = 3.0V, Ta = 25oC and not 100% tested.
Page 10
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 9
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-8 -10
Symbol Parameter Min. Max. Min. Max. Unit
trC Read Cycle Time 8 — 10 — ns
taa Address Access Time — 8 — 10 ns
tOHa Output Hold Time 2.5 — 2.5 — ns
taCe CE Access Time — 8 — 10 ns
tdOe OE Access Time — 5.5 — 6.5 ns
tHzOe(2) OE to High-Z Output — 3 — 4 ns
tLzOe(2) OE to Low-Z Output 0 — 0 — ns
tHzCe(2 CE to High-Z Output 0 3 0 4 ns
tLzCe(2) CE to Low-Z Output 3 — 3 — ns
tba LB, UB Access Time — 5.5 — 6.5 ns
tHzb(2) LB, UB to High-Z Output 0 3 0 3 ns
tLzb(2) LB, UB to Low-Z Output 0 — 0 — ns
tPu Power Up Time 0 — 0 — ns
tPd Power Down Time — 8 — 10 ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V
and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage.
Page 11
10 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-20 ns
Symbol Parameter Min. Max. Unit
trC Read Cycle Time 20 — ns
taa Address Access Time — 20 ns
tOHa Output Hold Time 2.5 — ns
taCe CE Access Time — 20 ns
tdOe OE Access Time — 8 ns
tHzOe(2) OE to High-Z Output 0 8 ns
tLzOe(2) OE to Low-Z Output 0 — ns
tHzCe(2 CE to High-Z Output 0 8 ns
tLzCe(2) CE to Low-Z Output 3 — ns
tba LB, UB Access Time — 8 ns
tHzb LB, UB to High-Z Output 0 8 ns
tLzb LB, UB to Low-Z Output 0 — ns
Notes:
1. Test conditions assume signal transition times of 1.5 ns or less, timing reference levels of 1.25V, input pulse levels of 0.4V to
Vdd-0.3V and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
Page 12
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 11
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
t RC
t OHAt AA
t DOE
t LZOE
t ACE
t LZCE
t HZOE
HIGH-Z
DATA VALID
CE_RD2.eps
ADDRESS
OE
CE
DOUT
t HZCE
READ CYCLE NO. 2(1,3) (CE and OE Controlled)
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE = ViL.
3. Address is valid prior to or coincident with CE LOW transitions.
AC WAVEFORMS
READ CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = ViL)
DATA VALID
READ1.eps
PREVIOUS DATA VALID
t AA
t OHA t OHA
t RC
DOUT
ADDRESS
Page 13
12 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)
-8 -10
Symbol Parameter Min. Max. Min. Max. Unit
twC Write Cycle Time 8 — 10 — ns
tsCe CE to Write End 6.5 — 8 — ns
taw Address Setup Time 6.5 — 8 — ns
to Write End
tHa Address Hold from Write End 0 — 0 — ns
tsa Address Setup Time 0 — 0 — ns
tPwb LB, UB Valid to End of Write 6.5 — 8 — ns
tPwe1 WE Pulse Width 6.5 — 8 — ns
tPwe2 WE Pulse Width (OE = LOW) 8.0 — 10 — ns
tsd Data Setup to Write End 5 — 6 — ns
tHd Data Hold from Write End 0 — 0 — ns
tHzwe(2) WE LOW to High-Z Output — 3.5 — 5 ns
tLzwe(2) WE HIGH to Low-Z Output 2 — 2 — ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states to initi-
ate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising
or falling edge of the signal that terminates the write. Shaded area product in development
Page 14
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 13
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range)
-20 ns
Symbol Parameter Min. Max. Unit
twC Write Cycle Time 20 — ns
tsCe CE to Write End 12 — ns
taw Address Setup Time 12 — ns
to Write End
tHa Address Hold from Write End 0 — ns
tsa Address Setup Time 0 — ns
tPwb LB, UB Valid to End of Write 12 — ns
tPwe1 WE Pulse Width (OE = HIGH) 12 — ns
tPwe2 WE Pulse Width (OE = LOW) 17 — ns
tsd Data Setup to Write End 9 — ns
tHd Data Hold from Write End 0 — ns
tHzwe(3) WE LOW to High-Z Output — 9 ns
tLzwe(3) WE HIGH to Low-Z Output 3 — ns
Notes:
1. Test conditions for IS61WV6416LL assume signal transition times of 1.5ns or less, timing reference
levels of 1.25V, input pulse levels of 0.4V to Vdd-0.3V and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not
100% tested.
3. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals
must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data
Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates
the write.
Page 15
14 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
AC WAVEFORMS
WRITE CYCLE NO. 1(1,2) (CE Controlled, OE = HIGH or LOW)
DATA UNDEFINED
t WC
VALID ADDRESS
t SCE
t PWE1
t PWE2
t AW
t HA
HIGH-Z
t HD
t SA
t HZWE
ADDRESS
CE
WE
DOUT
DIN DATAIN VALID
t LZWE
t SD
CE_WR1.eps
Page 16
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 15
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
AC WAVEFORMS
WRITE CYCLE NO. 2 (WE Controlled. OE is HIGH During Write Cycle) (1,2)
DATA UNDEFINED
LOW
t WC
VALID ADDRESS
t PWE1
t AW
t HA
HIGH-Z
t PBW
t HD
t SA
t HZWE
ADDRESS
CE
UB, LB
WE
DOUT
DIN
OE
DATAIN VALID
t LZWE
t SD
UB_CEWR2.eps
WRITE CYCLE NO. 3 (WE Controlled. OE is LOW During Write Cycle) (1)
DATA UNDEFINED
t WC
VALID ADDRESS
LOW
LOW
t PWE2
t AW
t HA
HIGH-Z
t PBW
t HD
t SA
t HZWE
ADDRESS
CE
UB, LB
WE
DOUT
DIN
OE
DATAIN VALID
t LZWE
t SD
UB_CEWR3.eps
Page 17
16 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
AC WAVEFORMS
WRITE CYCLE NO. 4 (LB, UB Controlled, Back-to-Back Write) (1,3)
DATA UNDEFINED
t WC
ADDRESS 1 ADDRESS 2
t WC
HIGH-Z
t PBW
WORD 1
LOW
WORD 2
UB_CEWR4.eps
t HD
t SA
t HZWE
ADDRESS
CE
UB, LB
WE
DOUT
DIN
OE
DATAIN
VALID
t LZWE
t SD
t PBW
DATAIN
VALID
t SD
t HD
t SA
t HA t HA
Notes:
1. The internal Write time is defined by the overlap of CE = LOw, UB and/or LB = LOw, and WE = LOW. All signals must be in valid states to
initiate a Write, but any can be deasserted to terminate the Write. The t sa, t Ha, t sd, and t Hd timing is referenced to the rising or falling edge
of the signal that terminates the Write.
2. Tested with OE HIGH for a minimum of 4 ns before WE = LOW to place the I/O in a HIGH-Z state.
3. WE may be held LOW across many address cycles and the LB, UB pins can be used to control the Write function.
Page 18
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 17
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
DATA RETENTION WAVEFORM (CE Controlled)
VDD
CE ≥ VDD - 0.2V
tSDR tRDR
VDR
CE
GND
1.65V
1.4V
Data Retention Mode
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter Test Condition Min. Max. Unit
Vdr Vdd for Data Retention See Data Retention Waveform 1.2 3.6 V
idr Data Retention Current Vdd = 1.2V, CE ≥ Vdd – 0.2V Ind. — 20 mA
Auto. — 50
tsdr Data Retention Setup Time See Data Retention Waveform 0 — ns
trdr Recovery Time See Data Retention Waveform trC — ns
Page 19
18 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
ORDERING INFORMATION
Industrial Range: -40°C to +85°C
Voltage Range: 2.4V to 3.6V
Speed (ns) Order Part No. Package
10 (81) IS61WV102416BLL-10MI 48 mini BGA (9mm x 11mm)
IS61WV102416BLL-10MLI 48 mini BGA (9mm x 11mm), Lead-free
IS61WV102416BLL-10TLI TSOP (Type I), Lead-free
Note:
1. Speed = 8ns for Vdd = 3.3V + 5%. Speed = 10ns for Vdd = 2.4V - 3.6V
Industrial Range: -40°C to +85°C
Voltage Range: 1.65V to 2.2V
Speed (ns) Order Part No. Package
20 IS61WV102416ALL-20MI 48 mini BGA (9mm x 11mm)
IS61WV102416ALL-20MLI 48 mini BGA (9mm x 11mm), Lead-free
IS61WV102416ALL-20TLI TSOP (Type I), Lead-free
Automotive Range: -40°C to +125°C
Voltage Range: 2.4V to 3.6V
Speed (ns) Order Part No. Package
10 IS64WV102416BLL-10MA3 48 mini BGA (9mm x 11mm)
IS64WV102416BLL-10MLA3 48 mini BGA (9mm x 11mm), Lead-free
IS64WV102416BLL-10CTLA3 TSOP (Type I), Copper Leadframe, Lead-free
Page 20
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 19
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
2.
R
ef
er
en
ce
d
oc
um
en
t :
J
E
D
E
C
M
O
-2
07
1.
C
O
N
TR
O
LL
IN
G
D
IM
E
N
S
IO
N
:
M
M
.
N
O
TE
:
08
/2
1/
20
08
