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MC33662LEFR2

hot MC33662LEFR2

MC33662LEFR2

For Reference Only

Part Number MC33662LEFR2
Manufacturer NXP
Description IC LIN INTERFACE W/WAKE 8SOIC
Datasheet MC33662LEFR2 Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 4238 piece(s)
Unit Price $ 0.49 *
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MC33662LEFR2 Specifications

ManufacturerNXP
CategoryIntegrated Circuits (ICs) - Interface - Drivers, Receivers, Transceivers
Datasheet MC33662LEFR2 Datasheet
Package8-SOIC (0.154", 3.90mm Width)
Series-
TypeTransceiver
ProtocolLIN
Number of Drivers/Receivers1/1
DuplexHalf
Receiver Hysteresis175mV
Data Rate20kbps
Voltage - Supply7 V ~ 18 V
Operating Temperature-40°C ~ 125°C
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

MC33662LEFR2 Datasheet

Page 1

Page 2

Document Number: MC33662 Rev. 7.0, 1/2014 Freescale Semiconductor Advance InformationLIN 2.1 / SAEJ2602-2, LIN Physical Layer The Local Interconnect Network (LIN) is a serial communication protocol, designed to support automotive networks in conjunction with a Controller Area Network (CAN). As the lowest level of a hierarchical network, LIN enables cost-effective communication with sensors and actuators when all the features of CAN are not required. The three 33662 versions are designed to operate at different maximum baud rates. The 33662LEF and 33662BLEF, and the 33662SEF and 33662BSEF, offer a normal baud rate (20 kbps), and the 33662JEF and 33662BJEF, a slow baud rate (10 kbps). They integrate a fast baud rate (above 100 kbps), as reported by the RXD pin for test and programming modes. They provide excellent EMC (Electromagnetic Compatibility) and Radiated Emission performance, ESD (Electrostatic Discharge) robustness, and safe behavior, in the event of a LIN bus short-to-ground, or a LIN bus leakage during low- power mode. This device is powered by SMARTMOS technology. Features • Operational from a VSUP of 7.0 to 18 V DC, functional up to 27 V DC, and handles 40 V during Load Dump • Compatible with LIN Protocol Specification 1.3, 2.0, 2.1, and SAEJ2602-2 • Active bus wave shaping, offering excellent radiated emission performance • Sustains up to 15.0 kV minimum ESD IEC61000-4-2 on the LIN Bus, 20 kV on the WAKE pin, and 25 kV on the VSUP pin • Very high immunity against electromagnetic interference • Low standby current in Sleep mode • Overtemperature protection • Local and remote Wake-up capability reported by the RXD pin • Fast baud rate selection reported by RXD pin • 5.0 V and 3.3 V compatible digital inputs without any required external components Figure 1. 33662 Master LIN Bus Simplified Application Diagram LINCELL 33662 EF SUFFIX (PB-FREE) 98ASB42564B 8-PIN SOICN Applications • Automotive Market: • Body electronics (BCM, gateway, roof, door, lighting, HVAC) • Powertrain (EMS, start & stop), BMS • Safety & Chassis (TPMS, seat belt) 33662 WAKE EN TXD VSUP INH LIN GND MCU VDD 12 V 5.0 V or 3.3 V VBAT LIN Interface RXD Regulator CAN SBC or* This document contains certain information on a new product. Specifications and information herein are subject to change without notice. © Freescale Semiconductor, Inc., 2011-2014. All rights reserved.

Page 3

DEVICE VARIATIONSDEVICE VARIATIONS Table 1. Device Variations Freescale Part No. (Add an R2 suffix for Tape and Reel orders) Maximum Baud Rate Temperature Range (TA) Package MC33662LEF (1) MC33662BLEF 20 kbps - 40 to 125 °C 8 SOICN MC33662SEF (1) MC33662BSEF 20 kbps with restricted limits for transmitter and receiver symmetry MC33662JEF (1) MC33662BJEF 10 kbps Notes 1. In Sleep mode, the total module current consumption may be higher than expected if the external pull-up resistor on the RxD pin is implemented. There may be an unexpected glitch on RxD as INH goes low.Analog Integrated Circuit Device Data 2 Freescale Semiconductor 33662

Page 4

INTERNAL BLOCK DIAGRAMINTERNAL BLOCK DIAGRAM Figure 2. 33662 Simplified Internal Block Diagram VSUP INH LIN EN RXD TXD WAKE GND Control Unit X 1 200 k   EN_RXD INH_ON EN-SLEEP RXD_INT Receiver LIN_EN TXD_INT Slope Control 30 k 725 kAnalog Integrated Circuit Device Data Freescale Semiconductor 3 33662

Page 5

PIN CONNECTIONSPIN CONNECTIONS Figure 3. 33662 8-SOICN Pin Connections Table 2. 33662 8-SOICN Pin Definitions A functional description of each pin can be found in the Functional Pin Description section beginning on page 21. Pin PIN NAME Pin Function Formal Name Definition 1 RXD Output Data Output This pin is the receiver output of the LIN interface which reports the state of the bus voltage to the MCU interface. 2 EN Input Enable Control This pin controls the operation mode of the interface. 3 WAKE Input Wake Input This pin is a high-voltage input used to wake-up the device from Sleep mode. 4 TXD Input Data Input This pin is the transmitter input of the LIN interface which controls the state of the bus output. 5 GND Ground Ground This pin is the device ground pin. 6 LIN Input/Output LIN Bus This bidirectional pin represents the single-wire bus transmitter and receiver. 7 VSUP Power Power Supply This pin is the device battery level power supply. 8 INH Output Inhibit Output This pin can have two main functions: controlling an external switchable voltage regulator having an inhibit input, or driving an external bus resistor in the master node application. 1 2 3 4 5 6 7 8RXD EN WAKE TXD INH VSUP LIN GND Analog Integrated Circuit Device Data 4 Freescale Semiconductor 33662

Page 6

ELECTRICAL CHARACTERISTICS MAXIMUM RATINGSELECTRICAL CHARACTERISTICS MAXIMUM RATINGS Table 3. Maximum Ratings All voltages are with respect to ground, unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage to the device. Ratings Symbol Value Unit ELECTRICAL RATINGS Power Supply Voltage Normal Operation (DC) Transient input voltage with external component (according to ISO7637-2 & ISO7637- 3 & “Hardware Requirements for LIN, CAN and Flexray Interfaces in Automotive Applications” specification Rev1.1 / December 2nd, 2009) (See Table 4 and Figure 4) - Pulse 1 (test up to the limit for Damage - Class A(2)) - Pulse 2a (test up to the limit for Damage - Class A(2)) - Pulse 3a (test up to the limit for Damage - Class A(2)) - Pulse 3b (test up to the limit for Damage - Class A(2)) - Pulse 5b (Class A)(2) VSUP(SS) VSUP(S1) VSUP(S2A) VSUP(S3A) VSUP(S3B) VSUP(S5B) -0.3 to 27 -100 +75 -150 +100 -0.3 to 40 V WAKE Normal Operation within series 2*18 k resistor (DC) Transient input voltage with external component (according to ISO7637-2 & ISO7637- 3 & “Hardware Requirements for LIN, CAN and Flexray Interfaces in Automotive Applications” specification Rev1.1 / December 2nd, 2009) (See Table 4 and Figure 5) - Pulse 1 (test up to the limit for Damage - Class D(3)) - Pulse 2a (test up to the limit for Damage - Class D(3)) - Pulse 3a (test up to the limit for Damage - Class D(3)) - Pulse 3b (test up to the limit for Damage - Class D(3)) VWAKE(SS) VWAKE(S1) VWAKE(S2A) VWAKE(S3A) VWAKE(S3B) -27 to 40 -100 +75 -150 +100 V Logic Voltage (RXD, TXD, EN Pins) VLOG - 0.3 to 5.5 V LIN Bus Voltage Normal Operation (DC) Transient (Coupled Through 1.0 nF Capacitor, according to ISO7637-2 & ISO7637-3 & “Hardware Requirements for LIN, CAN and Flexray Interfaces in Automotive Applications” specification Rev1.1 / December 2nd, 2009) (See Table 4 and Figure 6) - Pulse 1 (test up to the limit for Damage - Class D(3)) - Pulse 2a (test up to the limit for Damage - Class D(3)) - Pulse 3a (test up to the limit for Damage - Class D(3)) - Pulse 3b (test up to the limit for Damage - Class D(3)) VBUS(SS) VBUS(S1) VBUS(S2A) VBUS(S3A) VBUS(S3B) -27 to 40 -100 +75 -150 +100 V INH Voltage / Current DC Voltage Transient (Coupled Through 1.0 nF Capacitor, according to ISO7637-2 & ISO7637-3 & “Hardware Requirements for LIN, CAN and Flexray Interfaces in Automotive Applications” specification Rev1.1 / December 2nd, 2009) (See Table 4 and Figure 7) - Pulse 1 (test up to the limit for Damage - Class D(3)) - Pulse 2a (test up to the limit for Damage - Class D(3)) - Pulse 3a (test up to the limit for Damage - Class D(3)) - Pulse 3b (test up to the limit for Damage - Class D(3)) VINH VINH(S1) VINH(S2A) VINH(S3A) VINH(S3B) - 0.3 to VSUP +0.3 -100 +75 -150 +100 V Notes 2. Class A: All functions of a device/system perform as designed during and after exposure to disturbance. 3. Class D: At least one function of the transceiver stops working properly during the test, and will return to proper operation automatically when the exposure to the disturbance has ended. No physical damage of the IC occurs.Analog Integrated Circuit Device Data Freescale Semiconductor 5 33662

Page 7

ELECTRICAL CHARACTERISTICS MAXIMUM RATINGSELECTRICAL RATINGS (CONTINUED) ESD Capability - AECQ100 Human Body Model - JESD22/A114 (CZAP = 100 pF, RZAP = 1500 ) LIN pin versus GND Wake pin versus GND All other pins Charge Device Model - JESD22/C101 (CZAP = 4.0 pF Corner pins (Pins 1, 4, 5 and 8) All other pins (Pins 2, 3, 6 and 7) Machine Model - JESD22/A115 (CZAP = 220 pF, RZAP = 0 ) All pins According to “Hardware Requirements for LIN, CAN and Flexray Interfaces in Automotive Applications” specification Rev1.1 / December 2nd, 2009 (CZAP = 150 pF, RZAP = 330 ) Contact Discharge, Unpowered LIN pin without capacitor LIN pin with 220 pF capacitor VSUP (10 µF to ground) WAKE (2*18 k serial resistor) INH pin LIN pin with 220 pF capacitor and indirect ESD coupling (according to ISO10605 - Annex F) According to ISO10605 - Rev 2008 test specification (2.0 k / 150 pF) - Unpowered - Contact discharge LIN pin without capacitor LIN pin with 220 pF capacitor VSUP (10 µF to ground) WAKE (2*18 k serial resistor) (2.0 k / 330 pF) - Powered - Contact discharge LIN pin without capacitor LIN pin with 220 pF capacitor VSUP (10 µF to ground) WAKE (2*18 k serial resistor) VESD1-1 VESD1-2 VESD1-4 VESD2-1 VESD2-2 VESD3-1 VESD4-1 VESD4-2 VESD4-3 VESD4-4 VESD4-5 VESD4-6 VESD5-1 VESD5-2 VESD5-3 VESD5-4 VESD6-1 VESD6-2 VESD6-3 VESD6-4 ± 10.0 k ± 8.0 k ± 4.0 k ± 750 ± 500 ± 200 ± 15 k ± 15 k ±25 k ±20 k ±2.0 k >± 15 k ± 20 k ± 25 k ±25 k ±25 k ± 8 k ± 10 k ±12 k ±15 k V THERMAL RATINGS Operating Temperature Ambient Junction TA TJ - 40 to 125 - 40 to 150 C Storage Temperature TSTG - 40 to 150 C Thermal Resistance, Junction to Ambient RJA 150 °C/W Peak Package Reflow Temperature During Solder Mounting (4) TSOLDER 240 °C Thermal Shutdown Temperature TSHUT 150 to 200 °C Thermal Shutdown Hysteresis Temperature THYST 20 °C Notes 4. Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may cause malfunction or permanent damage to the device. Table 3. Maximum Ratings (continued) All voltages are with respect to ground, unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage to the device. Ratings Symbol Value UnitAnalog Integrated Circuit Device Data 6 Freescale Semiconductor 33662

Page 8

ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS Figure 4. Test Circuit for Transient Test Pulses (VSUP) Figure 5. Test Circuit for Transient Test Pulses (WAKE) Figure 6. Test Circuit for Transient Test Pulses (LIN) Figure 7. Test Circuit for Transient Test Pulses (INH) Table 4. Limits / Maximum Test Voltage for Transient Immunity Tests Test Pulse VS [V] Pulse repetition frequency [Hz] (1/T1) Test Duration [min] Ri [] Remarks 1 -100 2 1 for function test 10 for damage test 10 t2 = 0 s 2a +75 2 2 3a -150 10000 50 3b +100 10000 50 VSUP Transient Pulse Generator (Note) Note Waveform per ISO 7637-2. Test Pulses 1, 2a, 3a, 3b. GND DUT DUT GND D1 10 µF WAKE Transient Pulse Generator 1.0 nF (Note) 18 k Note Waveform per ISO 7637-2. Test Pulses 1, 2a, 3a, 3b. GND DUT DUT GND 18 k LIN Transient Pulse Generator 1.0 nF (Note) Note Waveform per ISO 7637-2. Test Pulses 1, 2a, 3a, 3b. GND DUT DUT GND INH Transient Pulse Generator 1.0 nF (Note) Note Waveform per ISO 7637-2. Test Pulses 1, 2a, 3a, 3b. GND DUT DUT GNDAnalog Integrated Circuit Device Data Freescale Semiconductor 7 33662

Page 9

ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICSSTATIC ELECTRICAL CHARACTERISTICS Table 5. Static Electrical Characteristics Characteristics under conditions 7.0 V  VSUP  18 V, - 40C  TA  125C, GND = 0 V, unless otherwise noted. Typical values reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted. Characteristic Symbol Min Typ Max Unit VSUP PIN (DEVICE POWER SUPPLY) Nominal Operating Voltage VSUP 7.0 13.5 18.0 V Functional Operating Voltage(5) VSUPOP 6.7 – 27 V Load Dump VSUPLD – – 40 V Power-On Reset (POR) Threshold VSUP Ramp Down and INH goes High to Low VPOR 3.5 – 5.3 V Power-On Reset (POR) Hysteresis VPORHYST – 270 – mV VSUP Undervoltage Threshold (positive and negative) Transmission disabled and LIN bus goes in recessive state VUVL, VUVH 5.8 – 6.7 V VSUP Undervoltage Hysteresis (VUVL - VUVH) VUVHYST – 130 – mV Supply Current in Sleep Mode VSUP  13.5 V, Recessive State 13.5 V < VSUP < 27 V VSUP  13.5 V, Shorted to GND IS1 IS2 IS3 — — — 6.0 — 24 11 20 70 A Supply Current in Normal or Slow or Fast Mode Bus Recessive, Excluding INH Output Current Bus Dominant, Excluding INH Output Current IS(REC) IS(DOM) — — 4.0 6.0 6.0 8.0 mA RXD OUTPUT PIN (LOGIC) Low Level Output Voltage IIN  1.5 mA VOL 0 — 0.9 V High Level Output Voltage VEN = 5.0 V, IOUT  250 A VEN = 3.3 V, IOUT  250 A VOH 4.25 3.0 — — 5.25 3.5 V TXD INPUT PIN (LOGIC) Low Level Input Voltage VIL — — 0.8 V High Level Input Voltage VIH 2.0 — — V Input Threshold Voltage Hysteresis VINHYST 100 300 600 mV Pull-up Current Source VEN = 5.0 V, 1.0 V < VTXD < 3.5 V IPU - 60 - 35 - 20 A EN INPUT PIN (LOGIC) Low Level Input Voltage VIL — — 0.8 V High Level Input Voltage VIH 2.0 — — V Input Voltage Threshold Hysteresis VINHYST 100 400 600 mV Pull-down Resistor RPD 100 230 350 kohm 5. For the functional operating voltage, the device is functional and all features are operating. The electrical parameters are noted under conditions 7.0 V VSUP 18V, -40 oC TA 125 o C, GND = 0 V.Analog Integrated Circuit Device Data 8 Freescale Semiconductor 33662

Page 10

ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS33662 LIN PHYSICAL LAYER - TRANSCEIVER LIN(6) Operating Voltage Range(7) VBAT 8.0 – 18 V Supply Voltage Range VSUP 7.0 – 18 V Voltage Range (within which the device is not destroyed) VSUP_NON_OP -0.3 – 40 V Current Limitation for Driver Dominant State Driver ON, VBUS = 18 V IBUS_LIM 40 90 200 mA Input Leakage Current at the Receiver Driver off; VBUS = 0 V; VBAT = 12 V IBUS_PAS_DOM -1.0 – – mA Leakage Output Current to GND Driver Off; 8.0 V VBAT  18 V; 8.0 V VBUS  18 V; VBUS  VBAT; VBUS VSUP IBUS_PAS_REC – – 20 µA Control Unit Disconnected from Ground(8) GNDDEVICE = VSUP; VBAT = 12 V; 0 < VBUS < 18 V IBUS_NO_GND -1.0 – 1.0 mA VBAT Disconnected; VSUP_DEVICE = GND; 0 V < VBUS < 18 V (9) IBUSNO_BAT – – 10 µA Receiver Dominant State(10) VBUSDOM – – 0.4 VSUP Receiver Recessive State(11) VBUSREC 0.6 – – VSUP Receiver Threshold Center (VTH_DOM + VTH_REC)/2 VBUS_CNT 0.475 0.5 0.525 VSUP Receiver Threshold Hysteresis (VTH_REC - VTH_DOM) VHYS – – 0.175 VSUP LIN dominant level with 500 680  and 1.0 k load on the LIN bus VLINDOM_LEVEL – – 0.25 VSUP VBAT_SHIFT VSHIFT_BAT 0 – 11.5% VBAT GND_SHIFT VSHIFT_GND 0 – 11.5% VBAT LIN Wake-up Threshold from Sleep Mode VBUSWU – 4.3 5.3 V LIN Pull-up Resistor to VSUP RSLAVE 20 30 60 k LIN Internal Capacitor(12) CLIN 30 pF Overtemperature Shutdown(13) TLINSD 150 160 200 °C Overtemperature Shutdown Hysteresis TLINSD_HYS – 20 – °C Notes 6. Parameters guaranteed for 7.0 V VSUP  18 V. 7. Voltage range at the battery level, including the reverse battery diode. 8. Loss of local ground must not affect communication in the residual network. 9. Node has to sustain the current that can flow under this condition. The bus must remain operational under this condition. 10. LIN threshold for a dominant state. 11. LIN threshold for a recessive state. 12. This parameter is guaranteed by process monitoring but not production tested. 13. When an overtemperature shutdown occurs, the LIN transmitter and receiver are in recessive state and INH switched off. This parameter is tested with a test mode on ATE and characterized at laboratory. Table 5. Static Electrical Characteristics (continued) Characteristics under conditions 7.0 V  VSUP  18 V, - 40C  TA  125C, GND = 0 V, unless otherwise noted. Typical values reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted. Characteristic Symbol Min Typ Max UnitAnalog Integrated Circuit Device Data Freescale Semiconductor 9

MC33662LEFR2 Reviews

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Zar*****oshi

January 5, 2020

Very good contact, well packed, hope to buy from you again.

Rene*****nder

December 15, 2019

So far so good. I need to see how they hold up.

Rile*****nzales

November 30, 2019

Very user friendly to find part and specs. Easy to deal with the transaction for different payment types. Thanks!

Bill*****nder

October 16, 2019

These function just as well. You do need to spend some time modifying the harness, but no big deal.

Rud*****ulati

September 11, 2019

Item came in time and looks as described.

Brend*****evara

July 22, 2019

I've never had a problem with Heisener. Packages arrive on time and in great condition.

Amara*****erson

July 19, 2019

I was able to make my list of needed parts and use suggested products. The big plus is the fact they show inventory quantity.

Mich***** Yang

June 1, 2019

Thanks a lot! Ease of ordering and I love when they upgrade my shipping for free. What a nice thing to do.

Jame*****Ahuja

April 2, 2019

They work great exactly what I needed.

Elli*****Lamb

January 30, 2019

It gives you a good quality product, with a great variety.. I will for sure order this set again when i start to run low.

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