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MD7IC21100NBR1

MD7IC21100NBR1

MD7IC21100NBR1

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Part Number MD7IC21100NBR1
Manufacturer NXP
Description IC PWR AMP RF 2170MHZ TO-272-14
Datasheet MD7IC21100NBR1 Datasheet
Package TO-272-14 Variant, Flat Leads
In Stock 397 piece(s)
Unit Price Request a Quote
Lead Time To be Confirmed
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Part Number # MD7IC21100NBR1 (RF Amplifiers) is manufactured by NXP and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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MD7IC21100NBR1 Specifications

ManufacturerNXP
CategoryRF/IF and RFID - RF Amplifiers
Datasheet MD7IC21100NBR1Datasheet
PackageTO-272-14 Variant, Flat Leads
Series-
Frequency2.11GHz ~ 2.17GHz
P1dB50.4dBm (110W)
Gain28.5dB
Noise Figure-
RF TypeW-CDMA
Voltage - Supply32V
Current - Supply925mA
Test Frequency-
Package / CaseTO-272-14 Variant, Flat Leads
Supplier Device PackageTO-272 WB-14

MD7IC21100NBR1 Datasheet

Page 1

Page 2

MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 1 RF Device Data Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MD7IC21100N wideband integrated circuit is designed with on--chip matching that makes it usable from 2110 to 2170 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD--SCDMA. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1A + IDQ1B = 190 mA, IDQ2A + IDQ2B = 925 mA, Pout = 32 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 28.5 dB Power Added Efficiency — 30% Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — --38 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, Pout = 110 Watts CW (3 dB Input Overdrive from Rated Pout) • Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 100 Watts CW Pout. • Typical Pout @ 1 dB Compression Point ≃ 110 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S-Parameters • On--Chip Matching (50 Ohm Input, on a per side basis, DC Blocked) • Internally Matched for Ease of Use • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. Figure 1. Functional Block Diagram Figure 2. Pin Connections Quiescent Current Temperature Compensation (1) VDS1A RFinA VGS1A RFout1/VDS2A VGS2A Note: Exposed backside of the package is the source terminal for the transistors. Quiescent Current Temperature Compensation (1) VDS1B RFinB VGS1B RFout2/VDS2B VGS2B VDS1A NC NC NC RFout1/VDS2A 1 2 3 4 7 8 14 VGS1B 9 10 11 VGS2A VGS1A RFinA RFinB VGS2B NC VDS1B RFout2/VDS2B13 6 12 (Top View) 5 1. Refer to AN1977,Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987,Quiescent Current Control for theRF IntegratedCircuit DeviceFamily.Go to http://www.freescale.com/rf. SelectDocumentation/ApplicationNotes -- AN1977orAN1987. Document Number: MD7IC21100N Rev. 2, 2/2012 Freescale Semiconductor Technical Data 2110--2170 MHz, 32 W AVG., 28 V SINGLE W--CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 CASE 1618--02 TO--270 WB--14 PLASTIC MD7IC21100NR1 CASE 1621--02 TO--270 WB--14 GULL PLASTIC MD7IC21100GNR1 CASE 1617--02 TO--272 WB--14 PLASTIC MD7IC21100NBR1 © Freescale Semiconductor, Inc., 2008, 2011--2012. All rights reserved.

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2 RF Device Data Freescale Semiconductor, Inc. MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --0.5, +6.0 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Input Power Pin 29 dBm Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case (Case Temperature 76°C, 32 W CW) Stage 1, 28 Vdc, IDQ1A + IDQ1B = 190 mA (Case Temperature 76°C, 32 W CW) Stage 2, 28 Vdc, IDQ2A + IDQ2B = 925 mA RθJC 2.7 0.7 °C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 0 Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) III Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Stage 1 — Off Characteristics (4) Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Stage 1 — On Characteristics (4) Gate Threshold Voltage (VDS = 10 Vdc, ID = 50 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1A + IDQ1B = 190 mAdc) VGS(Q) — 2.9 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1A + IDQ1B = 190 mAdc, Measured in Functional Test) VGG(Q) 5.5 6.3 7 Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Each side of device measured separately. (continued)

Page 4

MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 3 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Stage 2 — Off Characteristics (1) Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Stage 2 — On Characteristics (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 270 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2A + IDQ2B = 925 mAdc) VGS(Q) — 2.8 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2A + IDQ2B = 925 mAdc, Measured in Functional Test) VGG(Q) 5.3 5.9 6.8 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) 0.1 0.3 0.8 Vdc Stage 2 — Dynamic Characteristics (1,2) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 380 — pF Functional Tests (3) (In Freescale Wideband 2110--2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A + IDQ1B = 190 mA, IDQ2A + IDQ2B = 925 mA, Pout = 32 W Avg., f = 2167.5 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 27 28.5 32 dB Power Added Efficiency PAE 27 30 — % Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 5.6 6.1 — dB Adjacent Channel Power Ratio ACPR — --38 --36 dBc Input Return Loss IRL — --15 --9 dB Typical Performances (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A + IDQ1B = 190 mA, IDQ2A + IDQ2B = 925 mA, 2110--2170 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 110 — W IMD Symmetry @ 112 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym — 50 — MHz VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 50 — MHz Gain Flatness in 60 MHz Bandwidth @ Pout = 32 W Avg. GF — 0.3 — dB Quiescent Current Accuracy over Temperature with 4.7 kΩ Gate Feed Resistors (--30 to 85°C) (4) ∆IQT — ±3 — % Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 110 W CW Φ — 0.6 — ° Average Group Delay @ Pout = 110 W CW, f = 2140 MHz Delay — 2.6 — ns Part--to--Part Insertion Phase Variation @ Pout = 110 W CW, f = 2140 MHz, Six Sigma Window ∆Φ — 35 — ° Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.042 — dB/°C Output Power Variation over Temperature (--30°C to +85°C) ∆P1dB — 0.003 — dB/°C 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in a single--ended configuration. 4. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.

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4 RF Device Data Freescale Semiconductor, Inc. MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 Figure 3. MD7IC21100NR1(GNR1)(NBR1) Test Circuit Schematic RF INPUT VGG2 Z3 RF OUTPUT C11 VDD2 1 2 3 4 5 8 9 14 12 11 10 DUT Z8 Quiescent Current Temperature Compensation Z9 R3 6 7 13 C8 Z7Z6 C4C3 VDD1 Z2 Z6 0.066″ x 0.821″ Microstrip Z7 0.066″ x 0.533″ Microstrip Z8, Z9 0.080″ x 0.902″ Microstrip PCB Rogers RO4350B, 0.030″, εr = 3.5 Z1 0.066″ x 2.193″ Microstrip Z2 0.141″ x 0.126″ Microstrip Z3 0.628″ x 0.045″ Microstrip Z4 0.628″ x 0.340″ Microstrip Z5 0.066″ x 0.581″ Microstrip R5 VGG1 Z1 Z4 Z5 C2 VDD1 R4 NC NC R2 VGG1 R1 VGG2 C1 R6 Quiescent Current Temperature Compensation C14 C15C13C12 C18C16C9 C6C5C19C17C10 NC C7 NC Table 6. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3, C4, C5, C6 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata C7, C8, C9, C10 5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC C11 10 pF Chip Capacitor ATC100B100JT500XT ATC C12, C13, C14 1.2 pF Chip Capacitors ATC100B1R2CT500XT ATC C15 0.5 pF Chip Capacitor ATC100B0R5CT500XT ATC C16, C17 0.1 μF, 100 V Chip Capacitors GRM32NR72A104KA01B Murata C18, C19 1 μF, 100 V Chip Capacitors GRM32EER72A105KA01L Murata R1, R2, R3, R4 4.7 kΩ, 1/4 W Chip Resistors CRCW12064701FKEA Vishay R5, R6 2 Ω,1/2 W Chip Resistors CRCW12102R00FKEA Vishay

Page 6

MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 5 RF Device Data Freescale Semiconductor, Inc. Figure 4. MD7IC21100NR1(GNR1)(NBR1) Test Circuit Component Layout MD7IC21100N Rev. 2 VGG2 R1 VGG1 R2 R6 C1 VDD1 C7 R3 R4 VGG1 VGG2 C2 R5 C8 C10 C19 C17 C6 C5 C13 C15 C12 C14 C11 C4 C3C18 C16C9 C U T O U T A R E A

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6 RF Device Data Freescale Semiconductor, Inc. MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 TYPICAL CHARACTERISTICS AC PR (d Bc ) IR L, IN PU T R ET U R N LO SS (d B) 2220 26 30 2060 --42 31 f, FREQUENCY (MHz) Figure 5. Output Peak--to--Average Ratio Compression (PARC) versus Broadband Performance @ Pout = 32 Watts Avg. --25 --10 --13 --16 --19 --22 G ps ,P O W ER G AI N (d B) η D ,D R AI N EF FI C IE N C Y (% ) 29.6 29.2 28.8 28.4 27.6 28 27.2 26.8 26.4 30 29 28 27 --37 --38 --39 --40 --41 2080 2100 2120 2140 2160 2180 2200 --2 --1 --1.2 --1.4 --1.6 --1.8 PA R C (d B) 300 25 30 1 1156 mA Pout, OUTPUT POWER (WATTS) CW Figure 6. Power Gain versus Output Power @ IDQ1A + IDQ1B = 190 mA VDD = 28 Vdc IDQ1A + IDQ1B = 190 mA f = 2140 MHz G ps ,P O W ER G AI N (d B) 29 28 27 26 10 100 463 mA 300 22 32 1 238 mA IDQ1A + IDQ1B = 285 mA 190 mA Pout, OUTPUT POWER (WATTS) CW Figure 7. Power Gain versus Output Power @ IDQ2A + IDQ2B = 925 mA VDD = 28 Vdc IDQ2A + IDQ2B = 925 mA f = 2140 MHz G ps ,P O W ER G AI N (d B) 30 28 26 24 10 100 143 mA 95 mA 100 --60 --10 1 IM3--U TWO--TONE SPACING (MHz) Figure 8. Intermodulation Distortion Products versus Tone Spacing IM D ,I N TE R M O D U LA TI O N D IS TO RT IO N (d Bc ) 10 --20 --30 --40 --50 IM3--L IM5--U IM5--L IM7--U IM7--L ηD IRL Gps ACPR PARC Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ1A + IDQ1B = 190 mA IDQ2A + IDQ2B = 925 mA, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth 694 mA 925 mA VDD = 28 Vdc, Pout = 112 W (PEP), IDQ1A + IDQ1B = 190 mA IDQ2A + IDQ2B = 925 mA, Two--Tone Measurements (f1+f2)/2 = Center Frequency of 2140 MHz IDQ2A + IDQ2B = 1388 mA

Page 8

MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 7 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS Figure 9. Output Peak--to--Average Ratio Compression (PARC) versus Output Power 1 Pout, OUTPUT POWER (WATTS) --1 --3 --5 30 0 --2 --4 O U TP U T C O M PR ES SI O N AT 0. 01 % PR O BA BI LI TY O N C C D F (d B) 15 45 60 90 15 45 40 35 30 25 20 η D ,D R AI N EF FI C IE N C Y (% ) 75 ηD ACPR PARC AC PR (d Bc ) --50 --20 --25 --30 --40 --35 --45 29 G ps ,P O W ER G AI N (d B) 28.5 28 27.5 27 26.5 26 Gps 1 Gps ACPR Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power --10 --20 15 45 0 60 50 40 30 20 η D ,D R AI N EF FI C IE N C Y (% ) ηD G ps ,P O W ER G AI N (d B) 40 35 10 100 200 10 --60 AC PR (d Bc ) 30 25 20 0 --30 --40 --50 TC = --30°C 25°C 85°C 85°C --30°C 25°C Figure 11. Broadband Frequency Response 0 30 1650 f, FREQUENCY (MHz) VDD = 28 Vdc Pout = 19 dBm IDQ1A + IDQ1B = 190 mA IDQ2A + IDQ2B = 925 mA 20 15 10 1850 G AI N (d B) 25 Gain 1950 2050 2150 2250 2350 2450 2650 IRL --30 0 --5 --10 --15 --20 IR L (d B) 5 --25 VDD = 28 Vdc, IDQ1A + IDQ1B = 190 mA, IDQ2A + IDQ2B = 925 mA f = 2140 MHz, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 25°C 1750 2550 Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF IDQ1A + IDQ1B = 190 mA IDQ2A + IDQ2B = 925 mA, f = 2140 MHz --1 dB = 28.79 W --2 dB = 38.93 W --3 dB = 52.51 W --30°C VDD = 28 Vdc

Page 9

8 RF Device Data Freescale Semiconductor, Inc. MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 W--CDMA TEST SIGNAL 0.0001 100 0 PEAK--TO--AVERAGE (dB) Figure 12. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 10 1 0.1 0.01 0.001 2 4 6 8 PR O BA BI LI TY (% ) W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF Input Signal 10 --60 --100 10 (d B) --20 --30 --40 --50 --70 --80 --90 3.84 MHz Channel BW 7.21.8 5.43.60--1.8--3.6--5.4--9 9 f, FREQUENCY (MHz) Figure 13. Single--Carrier W--CDMA Spectrum --7.2 --ACPR in 3.84 MHz Integrated BW +ACPR in 3.84 MHz Integrated BW --10 0 1 3 5 7 9

Page 10

MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 9 RF Device Data Freescale Semiconductor, Inc. Zo = 50Ω Zload Zsource f = 2220 MHz f = 2060 MHz f = 2220 MHz f = 2060 MHz VDD = 28 Vdc, IDQ1A + IDQ1B = 190 mA, IDQ2A + IDQ2B = 925 mA, Pout = 32 W Avg. f MHz Zsource (1) Ω Zload Ω 2060 40.60 -- j16.80 1.99 -- j2.90 2080 40.51 -- j16.95 1.90 -- j2.74 2100 40.42 -- j17.10 1.82 -- j2.58 2120 40.32 -- j17.26 1.75 -- j2.41 2140 40.21 -- j17.42 1.68 -- j2.24 2160 40.10 -- j17.58 1.62 -- j2.08 2180 39.97 -- j17.75 1.55 -- j1.92 2200 39.84 -- j17.91 1.48 -- j1.77 2220 39.70 -- j18.08 1.41 -- j1.60 (1) Both 50 Ω inputs in parallel as per the product test fixture. Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Figure 14. Series Equivalent Source and Load Impedance Zsource Z load Input Matching Network Device Under Test Output Matching Network

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