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PC817X7

hot PC817X7

PC817X7

For Reference Only

Part Number PC817X7
Manufacturer Sharp Microelectronics
Description OPTOISOLATOR 5KV TRANS 4DIP
Datasheet PC817X7 Datasheet
Package 4-DIP (0.300", 7.62mm)
In Stock 360 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
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PC817X7

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  • To learn about the specification of PC817X7, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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PC817X7 Specifications

ManufacturerSharp Microelectronics
CategoryIsolators - Optoisolators - Transistor, Photovoltaic Output
Datasheet PC817X7 Datasheet
Package4-DIP (0.300", 7.62mm)
Series-
Number of Channels1
Voltage - Isolation5000Vrms
Current Transfer Ratio (Min)200% @ 5mA
Current Transfer Ratio (Max)600% @ 5mA
Rise / Fall Time (Typ)4µs, 3µs
Input TypeDC
Output TypeTransistor
Voltage - Output (Max)80V
Current - Output / Channel50mA
Voltage - Forward (Vf) (Typ)1.2V
Current - DC Forward (If) (Max)50mA
Vce Saturation (Max)200mV
Operating Temperature-30°C ~ 100°C
Mounting TypeThrough Hole
Package / Case4-DIP (0.300", 7.62mm)

PC817X7 Datasheet

Page 1

Page 2

PC817X Series 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC817) 2. Package resin : UL flammability grade (94V-0) ■ Features ■ Agency approvals/Compliance 1. I/O isolation for MCUs (Micro Controller Units) 2. Noise suppression in switching circuits 3. Signal transmission between circuits of different po- tentials and impedances ■ Applications DIP 4pin General Purpose Photocoupler 1. 4pin DIP package 2. Double transfer mold package (Ideal for Flow Solder- ing) 3. High collector-emitter voltage (VCEO:80V(*)) 4. Current transfer ratio (CTR : MIN. 50% at IF=5 mA, VCE=5V) 5. Several CTR ranks available 6. High isolation voltage between input and output (Viso(rms) : 5.0 kV) (*) Up to Date code "P7" (July 2002) VCEO : 35V. From the production Date code "J5" (May 1997) to "P7" (July 2002), however the products were screened by BVCEO≥70V. ∗4-channel package type is also available. (model No. PC847X Series) ■ Description PC817X Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4pin DIP, available in wide-lead spacing option and SMT gullwing lead-form option. Input-output isolation voltage(rms) is 5.0kV. Collector-emitter voltage is 80V(*) and CTR is 50% to 600% at input current of 5mA. 1 Sheet No.: D2-A03101EN Date Sep. 30. 2003 © SHARP Corporation Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. PC817X Series

Page 3

■ Internal Connection Diagram Anode Cathode Emitter Collector 1 1 2 3 4 2 4 3 2 Sheet No.: D2-A03101EN ■ Outline Dimensions Product mass : approx. 0.21g (Unit : mm) 1. Through-Hole [ex. PC817X] 2. SMT Gullwing Lead-Form [ex. PC817XI] 3. Wide Through-Hole Lead-Form [ex. PC817XF] 4. Wide SMT Gullwing Lead-Form [ex. PC817XFP] 6.5±0.5 7.62±0.3 4.58 ±0.5 θ θ θ : 0 to 13˚ Epoxy resin 3 .5 ±0 .5 3 .0 ±0 .5 0 .5 T Y P . 0 .6 ±0 .2 1 .2 ±0 .3 1 2 4 .5 8 ±0 .5 2 .5 4 ±0 .2 5 4 3 Anode mark Rank mark Factory identification mark Date code PC817 2 .7 ±0 .5 0.5±0.1 0.26±0.1 0 .6 ±0 .2 1 .2 ±0 .3 6.5±0.5 7.62±0.3 0 .2 6 ±0 .1 4.58±0.5 2.54±0.25 Epoxy resin 3 .5 ±0 .5 4 .5 8 ±0 .5 2 .5 4 ±0 .2 5 4 3 Anode mark Rank mark Factory identification mark Date code 1.0+0.4−0 1.0 +0.4 −0 10.0+0−0.5 0 .3 5 ±0 .2 5 1 2 P C 8 1 7 P C 8 1 7 4 .5 8 ±0 .5 0 .6 ±0 .2 1 .2 ±0 .3 1 .0 ±0 .1 2 .5 4 ±0 .2 5 6.5±0.5 Anode mark Factory identification mark Date code 4 3 7.62±0.3 10.16±0.5 0.26±0.1 4.58±0.5 0.5±0.1 Epoxy resin 3 .5 ±0 .5 2 .7 M IN . Rank mark 1 2 P C 8 1 7 0 .6 ±0 .2 1 .2 ±0 .3 1 .0 ±0 .1 6.5±0.5 10.16±0.5 0.75±0.250.75±0.25 4 .5 8 ±0 .5 2 .5 4 ±0 .2 5 Anode mark Rank mark Factory identification mark Date code 4 3 7.62±0.3 12.0MAX 4.58±0.5 Epoxy resin 3 .5 ±0 .5 0 .2 6 ±0 .1 0.5±0.1 0 .2 5 ±0 .2 5 1 2 PC817X Series

Page 4

Date code (2 digit) Rank mark Refer to the Model Line-up table A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 Mark A B C D E F H J K L M N Mark P R S T U V W X A B C Mark 1 2 3 4 5 6 7 8 9 O N D Month January February March April May June July August September October November December A.D 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 ··· ··· 2nd digit Month of production 1st digit Year of production Factory identification mark Factory identification Mark no mark Country of origin Japan Indonesia Philippines China * This factory marking is for identification purpose only. Please contact the local SHARP sales representative to see the actural status of the production. 3 repeats in a 20 year cycle Sheet No.: D2-A03101EN PC817X Series

Page 5

Sheet No.: D2-A03101EN ■ Electro-optical Characteristics Parameter Conditions Forward voltage Peak forward voltage Reverse current Collector dark current T ra ns fe r ch ar ac te ri st ic s Collector current Collector-emitter saturation voltage Isolation resistance Floating capacitance Cut-off frequency MIN. − − − − 2.5 − 5×1010 − − − − TYP. 1.2 − − − − 0.1 1×1011 0.6 80 4 3 MAX. 1.4 3.0 10 100 30.0 0.2 − 1.0 − 18 18 Unit V V µA nA mA V Ω pF kHz µs µs Symbol VF VFM IR ICEO IC VCE (sat) RISO fc tr tf Cf Response time Rise time Fall time IF=20mA IFM=0.5A VR=4V Terminal capacitance − 30 250 pFCt V=0, f=1kHz VCE=50V, IF=0 IF=5mA, VCE=5V IF=20mA, IC=1mA V=0, f=1MHz VCE=2V, IC=2mA, RL=100Ω VCE=5V, IC=2mA, RL=100Ω, −3dB DC500V, 40 to 60%RH (Ta=25˚C) *5 From the production Date code "J5" (May 1997) to "P7" (July 2002), however the products were screened by BVCEO≥70V. Collector-emitter breakdown voltage 80 − − VBVCEO IC=0.1mA, IF=0 Emitter-collector breakdown voltage 6 − − VBVECO IE=10µA, IF=0 In p u t O u tp u t *5 ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Unit In p u t Forward current mA *1 Peak forward current A Power dissipation mW O u tp u t Collector-emitter voltage V Emitter-collector voltage V Collector current mA Collector power dissipation mW Total power dissipation mW *2 Isolation voltage Operating temperature ˚C Storage temperature ˚C *3 Soldering temperature IF IFM P VCEO VECO IC PC Ptot Viso (rms) Topr Tstg Tsol ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1minute, f=60Hz *3 For 10s *4 Up to Date code "P7" (July 2002) VCEO : 35V. Rating 50 1 Reverse voltage VVR 6 70 80 6 50 150 200 −30 to +100 −55 to +125 260 5.0 kV *4 4 PC817X Series

Page 6

Sheet No.: D2-A03101EN ■ Model Line-up Lead Form Package Through-Hole PC817X PC817X1 PC817X2 PC817X3 PC817X4 PC817X5 PC817X6 PC817X7 PC817X8 PC817X9 PC817X0 Wide Through-Hole PC817XF PC817XF1 PC817XF2 PC817XF3 PC817XF4 PC817XF5 PC817XF6 PC817XF7 PC817XF8 PC817XF9 PC817XF0 PC817XI PC817XI1 PC817XI2 PC817XI3 PC817XI4 PC817XI5 PC817XI6 PC817XI7 PC817XI8 PC817XI9 PC817XI0 Taping PC817XP PC817XP1 PC817XP2 PC817XP3 PC817XP4 PC817XP5 PC817XP6 PC817XP7 PC817XP8 PC817XP9 PC817XP0 Wide SMT Gullwing PC817XFP − − − − − − − − − − Sleeve 2 000pcs/reel100pcs/sleeve SMT Gullwing Model No. IC [mA] (IF=5mA, VCE=5V, Ta=25˚C)Rank mark with or without A B C D A or B B or C C or D A, B or C B, C or D A, B, C or D 2.5 to 30.0 4.0 to 8.0 6.5 to 13.0 10.0 to 20.0 15.0 to 30.0 4.0 to 13.0 6.5 to 20.0 10.0 to 30.0 4.0 to 20.0 6.5 to 30.0 4.0 to 30.0 5 Please contact a local SHARP sales representative to inquire about production status and Lead-Free options. PC817X Series

Page 7

Sheet No.: D2-A03101EN C u rr en t tr an sf er r at io C T R ( % ) Forward current IF (mA) 0.1 1 10 0 800 700 600 500 400 300 200 100 VCE=5V Ta=25˚C Fig.6 Current Transfer Ratio vs. Forward Current Duty ratio 5 5 Pulse width≤100µs Ta=25˚C 10 20 100 50 200 500 210 −3 10 −2 5 2 10 −1 5 2 5 P ea k f o rw ar d c u rr en t I F M ( m A ) 1 10 000 5 000 2 000 1 000 Fig.5 Peak Forward Current vs. Duty Ratio 6 PC817X Series F o rw ar d c u rr en t I F ( m A ) Ambient temperature Ta (˚C) 0 50 40 30 20 10 −30 0 25 50 55 75 100 125 Fig.1 Forward Current vs. Ambient Temperature D io d e p o w er d is si p at io n P ( m W ) Ambient temperature Ta (˚C) 0 100 80 70 60 40 20 −30 0 25 50 55 75 100 125 Fig.2 Diode Power Dissipation vs. Ambient Temperature C o ll ec to r p o w er d is si p at io n P C ( m W ) Ambient temperature Ta (˚C) 0 250 200 150 100 50 −30 0 25 50 75 100 125 Fig.3 Collector Power Dissipation vs. Ambient Temperature Fig.4 Total Power Dissipation vs. Ambient Temperature T o ta l P o w er d is si p at io n P to t (m W ) Ambient temperature Ta (˚C) 0 250 200 150 100 50 −30 0 25 50 75 100 125

Page 8

Sheet No.: D2-A03101EN C o ll ec to r- em it te r sa tu ra ti o n v o lt ag e V C E ( sa t) ( V ) Forward current IF (mA) 0 0 1 2 3 4 5 5 10 6 15 7mA 1mA 3mA 5mA IC=0.5mA Ta=25˚C Fig.12 Collector-emitter Saturation Voltage vs. Forward Current 5 5 5 5 5 5 806040200−30 100 10 −5 10 −6 10 −7 10 −8 10 −9 10 −10 10 −11 C o ll ec to r d ar k c u rr en t I C E O ( A ) Ambient temperature Ta (˚C) VCE=50V Fig.11 Collector Dark Current vs. Ambient Temperature R el at iv e cu rr en t tr an sf er r at io ( % ) 0% 150% 100% 50% −40 0−20 20 40 60 80 100 Ambient temperature Ta (˚C) IF=1mA,VCE=5V IF=5mA,VCE=5V Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 C ol le ct or -e m it te r sa tu ra ti on v ol ta ge V C E ( sa t) ( V ) IF=20mA IC=1mA Ambient temperature Ta (˚C) −40 0−20 20 40 60 80 100 Fig.10 Collector - emitter Saturation Voltage vs. Ambient Temperature 7 PC817X Series 50˚C 25˚C 0˚C 0 2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 5 10 20 50 100 200 500 1 −25˚C Ta=75˚C F o rw ar d c u rr en t I F ( m A ) Forward voltage VF (V) Fig.7 Forward Current vs. Forward Voltage 0 0 5 1 10 15 20 25 30 2 3 4 5 6 7 8 9 20mA 10mA 5mA C o ll ec to r cu rr en t I C ( m A ) Collector-emitter voltage VCE (V) IF=30mA PC (MAX.) Ta=25˚C Fig.8 Collector Current vs. Collector-emitter Voltage

Page 9

Sheet No.: D2-A03101EN Frequency f (kHz) −20 0 0.5 1 2 5 −10 200100502010 500 1kΩ 100Ω V o lt ag e g ai n A v ( d B ) RL=10kΩ VCE=5V IC=2mA Ta=25˚C Fig.15 Frequency Response VCC RL Output Please refer to the conditions in Fig.15. RD VCE Fig.16 Test Circuit for Frequency Response Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. 8 PC817X Series VCC tftr ts 90% 10% td Output Input RLInput OutputRD Please refer to the conditions in Fig.13. VCE Fig.14 Test Circuit for Response TimeFig.13 Response Time vs. Load Resistance 0.01 0.1 1 10 500 200 50 0.2 0.5 2 10 0.1 1 5 20 100 50 R es p o n se t im e (µ s) VCE=2V IC=2mA Ta=25˚C ts td tf tr Load resistance RL (kΩ)

Page 10

Sheet No.: D2-A03101EN ■ Design Considerations While operating at IF<1.0mA, CTR variation may increase. Please make design considering this fact. This product is not designed against irradiation and incorporates non-coherent IRED. ● Degradation In general, the emission of the IRED used in photocouplers will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5years) into the design consideration. ● Recommended Foot Print (reference) ✩ For additional design assistance, please review our corresponding Optoelectronic Application Notes. 9 SMT Gullwing Lead-form Wide SMT Gullwing Lead-form 10.2 2 .5 4 1 .7 2.2 8.2 2 .5 4 1 .7 2.2 (Unit : mm) ● Design guide PC817X Series

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