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ZTX605

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ZTX605

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Part Number ZTX605
Manufacturer Diodes Incorporated
Description TRANS NPN DARL 120V 1A E-LINE
Datasheet ZTX605 Datasheet
Package E-Line-3
In Stock 2,332 piece(s)
Unit Price $ 0.9500 *
Lead Time Can Ship Immediately
Estimated Delivery Time Dec 4 - Dec 9 (Choose Expedited Shipping)
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Part Number # ZTX605 (Transistors - Bipolar (BJT) - Single) is manufactured by Diodes Incorporated and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For ZTX605 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add ZTX605 with quantity into BOM. Heisener.com does NOT require any registration to request a quote of ZTX605.

ZTX605 Specifications

ManufacturerDiodes Incorporated
CategoryDiscrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
Datasheet ZTX605Datasheet
PackageE-Line-3
Series-
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)120V
Vce Saturation (Max) @ Ib, Ic1.5V @ 1mA, 1A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 1A, 5V
Power - Max1W
Frequency - Transition150MHz
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseE-Line-3
Supplier Device PackageE-Line (TO-92 compatible)

ZTX605 Datasheet

Page 1

Page 2

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 120 Volt V CEO * 1 Amp continuous current * Gain of 2K at I C =1 Amp * P tot = 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX604 ZTX605 UNIT Collector-Base Voltage VCBO 120 140 V Collector-Emitter Voltage VCEO 100 120 V Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 4 A Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL ZTX604 ZTX605 UNIT CONDITIONS. MIN. MAX. MIN. MAX. Collector-Base Breakdown Voltage V(BR)CBO 120 140 V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 100 120 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 10 10 V IE=100µA Collector Cut-Off Current ICBO 0.01 10 0.01 10 µA µA µA µA VCB=100V VCB=120V VCB=100V,Tamb=100°C VCB=120V,Tamb=100°C Emitter Cut-Off Current IEBO 0.1 0.1 µA VEB=8V Colllector-Emitter Cut-Off Current ICES 10 10 µA VCES=100V VCES=120V Collector-Emitter Saturation Voltage VCE(sat) 1.0 1.5 1.0 1.5 V V IC=250mA, IB=0.25mA* IC=1A, IB=1mA* Base-Emitter Saturation Voltage VBE(sat) 1.8 1.8 V IC=1A, IB=1mA* Base-Emitter Turn-On Voltage VBE(on) 1.7 1.7 V IC=1A, VCE=5V* ZTX604 ZTX605 3-212 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL ZTX604 ZTX605 UNIT CONDITIONS. MIN. MAX. MIN. MAX. Static Forward Current Transfer Ratio hFE 2K 5K 2K 0.5K 100K 2K 5K 2K 0.5K 100K IC=50mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* Transition Frequency fT 150 150 MHz IC=100mA, VCE=10V f=20MHz Input Capacitance Cibo 90 Typical pF VEB=500mV, f=1MHz Output Capacitance Cobo 15 Typical pF VCB=10V, f=1MHz Switching Times ton 0.5 Typical µs IC=500mA, VCE=10V IB1=IB2=0.5mA toff 1.6 Typical µs *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% The maximum permissible operational temperature can be obtained from this graph using the following equation T amb (max ) = Power(max ) − Power(act) 0.0057 +25°C Tamb(max )= Maximum operating ambient temperature Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE and source resistance (RS) Power(actual)= Actual power dissipation in users circuit C B E E-Line TO92 Compatible ZTX604 ZTX605 Voltage Derating Graph VCE - Collector-Emitter Voltage (Volts) 1.0 0.8 0.6 0.4 0 0.2 1 10 100 DC Conditions RS= 100KΩ RS= ∞ M a x im u m P o w e r D is s ip a ti o n (W ) 200 RS= 1MΩ RS= 20KΩ ZTX605 ZTX604 3-213

Page 3

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 120 Volt V CEO * 1 Amp continuous current * Gain of 2K at I C =1 Amp * P tot = 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX604 ZTX605 UNIT Collector-Base Voltage VCBO 120 140 V Collector-Emitter Voltage VCEO 100 120 V Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 4 A Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL ZTX604 ZTX605 UNIT CONDITIONS. MIN. MAX. MIN. MAX. Collector-Base Breakdown Voltage V(BR)CBO 120 140 V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 100 120 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 10 10 V IE=100µA Collector Cut-Off Current ICBO 0.01 10 0.01 10 µA µA µA µA VCB=100V VCB=120V VCB=100V,Tamb=100°C VCB=120V,Tamb=100°C Emitter Cut-Off Current IEBO 0.1 0.1 µA VEB=8V Colllector-Emitter Cut-Off Current ICES 10 10 µA VCES=100V VCES=120V Collector-Emitter Saturation Voltage VCE(sat) 1.0 1.5 1.0 1.5 V V IC=250mA, IB=0.25mA* IC=1A, IB=1mA* Base-Emitter Saturation Voltage VBE(sat) 1.8 1.8 V IC=1A, IB=1mA* Base-Emitter Turn-On Voltage VBE(on) 1.7 1.7 V IC=1A, VCE=5V* ZTX604 ZTX605 3-212 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL ZTX604 ZTX605 UNIT CONDITIONS. MIN. MAX. MIN. MAX. Static Forward Current Transfer Ratio hFE 2K 5K 2K 0.5K 100K 2K 5K 2K 0.5K 100K IC=50mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* Transition Frequency fT 150 150 MHz IC=100mA, VCE=10V f=20MHz Input Capacitance Cibo 90 Typical pF VEB=500mV, f=1MHz Output Capacitance Cobo 15 Typical pF VCB=10V, f=1MHz Switching Times ton 0.5 Typical µs IC=500mA, VCE=10V IB1=IB2=0.5mA toff 1.6 Typical µs *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% The maximum permissible operational temperature can be obtained from this graph using the following equation T amb (max ) = Power(max ) − Power(act) 0.0057 +25°C Tamb(max )= Maximum operating ambient temperature Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE and source resistance (RS) Power(actual)= Actual power dissipation in users circuit C B E E-Line TO92 Compatible ZTX604 ZTX605 Voltage Derating Graph VCE - Collector-Emitter Voltage (Volts) 1.0 0.8 0.6 0.4 0 0.2 1 10 100 DC Conditions RS= 100KΩ RS= ∞ M a x im u m P o w e r D is s ip a ti o n (W ) 200 RS= 1MΩ RS= 20KΩ ZTX605 ZTX604 3-213

ZTX605 Reviews

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Mika*****Dubey

November 21, 2020

Great price. Worked well for my needs.

Kay***** Dunn

November 18, 2020

The prices are very competitive, I've had a few transactions lately and all were smooth as glass. I'm a very satisfied customer!

Bria*****erce

November 18, 2020

Fantastic quality products with fair and prompt shipping. Would save much time crossing all the features. Thank you for all your effort.

Sere*****alone

November 15, 2020

Heisener is on a very short list of companies I highly recommend without any hesitation. From stock, pricing, ease of ordering and great service, they have it all.

Addis*****nchal

November 11, 2020

Rec today in good order & condition . Thanks for speedy delivery.Regards.

Ann*****aba

November 4, 2020

Super easy to replace and labelled terminals made it a quick replacement.

Bray*****levins

November 1, 2020

I love your products are well organized. You make it easy to spend $$$! Lol. Keep up the good work folks!

ZTX605 Guarantees

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Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantee

Quality Guarantees

We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

ZTX605 Packaging

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