Page 37 - Diodes Incorporated Products - Transistors - FETs, MOSFETs - Single | Heisener Electronics
Contact Us
SalesDept@heisener.com +86-755-83210559 ext. 815
Login/Register
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Cart 0

Diodes Incorporated Products - Transistors - FETs, MOSFETs - Single

Records 2,523
Page  37/85
Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
DMN3066LVT-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 900mW
  • Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Package: -
Request a Quote
MOSFET (Metal Oxide)
30 V
3.6A (Ta)
2.5V, 4.5V
1.5V @ 250µA
4 nC @ 4.5 V
328 pF @ 10 V
±12V
-
900mW
67mOhm @ 2.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
DMT4003SCT
Diodes Incorporated

MOSFET N-CH 40V 205A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6865 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 156W
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
Package: -
Stock90
MOSFET (Metal Oxide)
40 V
205A (Tc)
10V
4V @ 250µA
75.6 nC @ 10 V
6865 pF @ 20 V
±20V
-
156W
3mOhm @ 90A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
DMP31D1UW-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT323 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 15 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 440mW
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
Package: -
Request a Quote
MOSFET (Metal Oxide)
30 V
600mA (Ta)
1.8V, 4.5V
1.1V @ 250µA
1.6 nC @ 8 V
54 pF @ 15 V
±8V
-
440mW
1Ohm @ 400mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
DMN61D9UT-13
Diodes Incorporated

2N7002 FAMILY SOT523 T&R 10K

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 260mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
Package: -
Request a Quote
MOSFET (Metal Oxide)
60 V
350mA (Ta)
1.8V, 5V
1V @ 250µA
0.4 nC @ 4.5 V
28.5 pF @ 30 V
±20V
-
260mW (Ta)
2Ohm @ 50mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
DMWSH120H28SM4Q
Diodes Incorporated

SIC MOSFET BVDSS: >1000V TO247-4

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 156.3 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): +19V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 429W (Tc)
  • Rds On (Max) @ Id, Vgs: 28.5mOhm @ 50A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
Package: -
Stock150
SiC (Silicon Carbide Junction Transistor)
1200 V
100A (Tc)
15V
3.6V @ 17.7mA
156.3 nC @ 15 V
-
+19V, -8V
-
429W (Tc)
28.5mOhm @ 50A, 15V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
DMN1032UCP4-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V X1-DSN1010-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 6 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 790mW (Ta)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X1-DSN1010-4 (Type B)
  • Package / Case: 4-XFBGA, DSBGA
Package: -
Request a Quote
MOSFET (Metal Oxide)
12 V
5A (Ta)
1.8V, 4.5V
1.2V @ 250µA
3.2 nC @ 4.5 V
325 pF @ 6 V
±8V
-
790mW (Ta)
28mOhm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
X1-DSN1010-4 (Type B)
4-XFBGA, DSBGA
DMG1012UWQ-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT323 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 460mW
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
Package: -
Stock8,040
MOSFET (Metal Oxide)
20 V
950mA (Ta)
1.8V, 4.5V
1V @ 250µA
1 nC @ 4.5 V
43 pF @ 16 V
±6V
-
460mW
450mOhm @ 600mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
DMT68M8LFV-7
Diodes Incorporated

MOSFET N-CH 60V 54.1A PWRDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8 (Type UX)
  • Package / Case: 8-PowerVDFN
Package: -
Stock4,389
MOSFET (Metal Oxide)
60 V
54.1A (Tc)
4.5V, 10V
3V @ 250µA
30 nC @ 10 V
2078 pF @ 30 V
±20V
-
2.7W (Ta), 41.7W (Tc)
9.5mOhm @ 13.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI3333-8 (Type UX)
8-PowerVDFN
DMT10H9M9LPSW-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMP3099LQ-13
Diodes Incorporated

MOSFET P-CH 30V 3.8A SOT23 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 563 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.08W
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: -
Stock23,970
MOSFET (Metal Oxide)
30 V
3.8A (Ta)
4.5V, 10V
2.1V @ 250µA
11 nC @ 10 V
563 pF @ 25 V
±20V
-
1.08W
65mOhm @ 3.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMP2110UFDBQ-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V U-DFN2020-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type B)
  • Package / Case: 6-UDFN Exposed Pad
Package: -
Stock15,849
MOSFET (Metal Oxide)
20 V
3.5A (Ta)
2.5V, 4.5V
1V @ 250µA
6 nC @ 4.5 V
443 pF @ 10 V
±10V
-
800mW (Ta)
80mOhm @ 2.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type B)
6-UDFN Exposed Pad
DMN52D0UQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT23 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: -
Request a Quote
MOSFET (Metal Oxide)
50 V
400mA (Ta)
1.8V, 5V
1V @ 250µA
1.5 nC @ 10 V
39 pF @ 25 V
±12V
-
500mW
2Ohm @ 50mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMTH10H009LFG-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
Package: -
Request a Quote
MOSFET (Metal Oxide)
100 V
14A (Ta), 55A (Tc)
4.5V, 10V
2.5V @ 250µA
41 nC @ 10 V
2361 pF @ 50 V
±20V
-
2.5W (Ta)
8.5mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMTH4M70SPGW-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI808

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 117.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10053 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.6W (Ta), 428W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI8080-5
  • Package / Case: SOT-1235
Package: -
Request a Quote
MOSFET (Metal Oxide)
40 V
460A (Tc)
10V
4V @ 250µA
117.1 nC @ 10 V
10053 pF @ 20 V
±20V
-
5.6W (Ta), 428W (Tc)
0.7mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI8080-5
SOT-1235
DMP2120U-13
Diodes Incorporated

MOSFET P-CH 20V 3.8A SOT23 T&R 1

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 487 pF @ 20 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 800mW
  • Rds On (Max) @ Id, Vgs: 62mOhm @ 4.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: -
Request a Quote
MOSFET (Metal Oxide)
20 V
3.8A (Ta)
1.8V, 4.5V
1V @ 250µA
6.3 nC @ 4.5 V
487 pF @ 20 V
±8V
-
800mW
62mOhm @ 4.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMTH10H2M2LPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 153A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6239 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
Package: -
Request a Quote
MOSFET (Metal Oxide)
100 V
153A (Tc)
4.5V, 10V
2.5V @ 250µA
116 nC @ 10 V
6239 pF @ 50 V
±20V
-
4W (Ta), 150W (Tc)
3.2mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
DMN3731U-13
Diodes Incorporated

MOSFET N-CH 30V 900MA SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 400mW
  • Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: -
Stock28,320
MOSFET (Metal Oxide)
30 V
900mA (Ta)
1.8V, 4.5V
950mV @ 250µA
5.5 nC @ 4.5 V
73 pF @ 25 V
±8V
-
400mW
460mOhm @ 200mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMNH6009SPS-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W
  • Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
Package: -
Request a Quote
MOSFET (Metal Oxide)
60 V
95A (Tc)
4.5V, 10V
3V @ 250µA
37.3 nC @ 10 V
1882 pF @ 30 V
±20V
-
1.6W
7.3mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
DMN6066SSSQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V SO-8 T&R 2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta)
  • Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Package: -
Stock7,500
MOSFET (Metal Oxide)
60 V
3.7A (Ta)
4.5V, 10V
3V @ 250µA
10.3 nC @ 10 V
502 pF @ 30 V
±20V
-
1.56W (Ta)
66mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
DMN2025UFDF-7
Diodes Incorporated

MOSFET N-CH 20V 6.5A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 486 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
Package: -
Request a Quote
MOSFET (Metal Oxide)
20 V
6.5A (Ta)
1.8V, 4.5V
1V @ 250µA
12.3 nC @ 10 V
486 pF @ 10 V
±10V
-
700mW (Ta)
25mOhm @ 4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
DMP2079LCA3-7
Diodes Incorporated

MOSFET P-CH 20V 3.4A X4DSN1006-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 10 V
  • Vgs (Max): -12V
  • FET Feature: -
  • Power Dissipation (Max): 810mW
  • Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X4-DSN1006-3 (Type B)
  • Package / Case: 3-XFDFN
Package: -
Request a Quote
MOSFET (Metal Oxide)
20 V
3.4A (Ta)
1.8V, 8V
1.2V @ 250µA
1.1 nC @ 4.5 V
152 pF @ 10 V
-12V
-
810mW
78mOhm @ 500mA, 8V
-55°C ~ 150°C (TJ)
Surface Mount
X4-DSN1006-3 (Type B)
3-XFDFN
DMTH6005LFGQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3223 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.38W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
Package: -
Request a Quote
MOSFET (Metal Oxide)
60 V
17A (Ta), 98A (Tc)
4.5V, 10V
2.5V @ 250µA
47.5 nC @ 10 V
3223 pF @ 30 V
±20V
-
2.38W (Ta), 75W (Tc)
4.1mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMT10H010LSSQ-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V SO-8 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 58.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4166 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Package: -
Request a Quote
MOSFET (Metal Oxide)
100 V
12A (Ta)
4.5V, 10V
2.8V @ 250µA
58.4 nC @ 10 V
4166 pF @ 50 V
±20V
-
1.9W (Ta)
9.5mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
DMN2310UW-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT323 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 450mW (Ta)
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 300mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
Package: -
Request a Quote
MOSFET (Metal Oxide)
20 V
1.3A (Ta)
1.8V, 4.5V
950mV @ 250µA
0.7 nC @ 4.5 V
38 pF @ 10 V
±8V
-
450mW (Ta)
200mOhm @ 300mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
DMN2710UFBQ-7B
Diodes Incorporated

MOSFET BVDSS: 8V~24V X1-DFN1006-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 720mW (Ta)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X1-DFN1006-3
  • Package / Case: 3-UFDFN
Package: -
Request a Quote
MOSFET (Metal Oxide)
20 V
1.3A (Ta)
1.8V, 4.5V
1V @ 250µA
0.6 nC @ 4.5 V
42 pF @ 16 V
±6V
-
720mW (Ta)
450mOhm @ 600mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X1-DFN1006-3
3-UFDFN
DMN62D4LFB-7B
Diodes Incorporated

MOSFET BVDSS: 41V~60V X2-DFN1006

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 407mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X1-DFN1006-3
  • Package / Case: 3-UFDFN
Package: -
Stock30,000
MOSFET (Metal Oxide)
60 V
407mA (Ta)
5V, 10V
2.5V @ 250µA
1.1 nC @ 10 V
40 pF @ 30 V
±20V
-
500mW
2Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
X1-DFN1006-3
3-UFDFN
DMN3069L-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 309 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: -
Request a Quote
MOSFET (Metal Oxide)
30 V
5.3A (Ta)
4.5V, 10V
1.8V @ 250µA
8.1 nC @ 10 V
309 pF @ 15 V
±20V
-
800mW
30mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMTH8003STLW-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI10

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8191 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.6W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI1012-8
  • Package / Case: 8-PowerSFN
Package: -
Request a Quote
MOSFET (Metal Oxide)
80 V
173A (Tc)
10V
4V @ 250µA
124 nC @ 10 V
8191 pF @ 40 V
±20V
-
5.6W (Ta), 150W (Tc)
2.5mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI1012-8
8-PowerSFN
DMTH10H032LFVW-7
Diodes Incorporated

MOSFET BVDSS: 61V~100V PowerDI33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
Package: -
Request a Quote
MOSFET (Metal Oxide)
100 V
26A (Tc)
4.5V, 10V
2.5V @ 250µA
11.9 nC @ 10 V
683 pF @ 50 V
±20V
-
1.7W (Ta)
30mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMN3061SWQ-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT323 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 490mW (Ta)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
Package: -
Stock1,461
MOSFET (Metal Oxide)
30 V
2.7A (Ta)
3.3V, 10V
1.8V @ 250µA
3.5 nC @ 4.5 V
278 pF @ 15 V
±20V
-
490mW (Ta)
60mOhm @ 3.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323