Page 5 - Diodes Incorporated Products - Transistors - FETs, MOSFETs - Single | Heisener Electronics
Contact Us
SalesDept@heisener.com +86-755-83210135-818
Login/Register
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Cart 0

Diodes Incorporated Products - Transistors - FETs, MOSFETs - Single

Records 1,285
Page  5/43
Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
DMN2990UFA-7B
Diodes Incorporated

MOSFET N-CH 20V 0.51A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 510mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-X2-DFN0806
  • Package / Case: 3-XFDFN
Package: 3-XFDFN
Stock349,866
MOSFET (Metal Oxide)
20V
510mA (Ta)
1.2V, 4.5V
1V @ 250µA
0.5nC @ 4.5V
27.6pF @ 16V
±8V
-
400mW (Ta)
990 mOhm @ 100mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
3-X2-DFN0806
3-XFDFN
DMN1019USN-7
Diodes Incorporated

MOSFET N-CH 12V 9.3A SC59

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2426pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 680mW (Ta)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 9.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-59
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock21,840
MOSFET (Metal Oxide)
12V
9.3A (Ta)
1.2V, 2.5V
800mV @ 250µA
50.6nC @ 8V
2426pF @ 10V
±8V
-
680mW (Ta)
10 mOhm @ 9.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-59
TO-236-3, SC-59, SOT-23-3
DMN1019UVT-7
Diodes Incorporated

MOSFET N-CH 12V 10.7A TSOT26

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50.4nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2588pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.73W (Ta)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 9.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Package: SOT-23-6 Thin, TSOT-23-6
Stock28,776
MOSFET (Metal Oxide)
12V
10.7A (Ta)
1.2V, 4.5V
800mV @ 250µA
50.4nC @ 8V
2588pF @ 10V
±8V
-
1.73W (Ta)
10 mOhm @ 9.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
DMN3016LFDE-7
Diodes Incorporated

MOSFET N-CH 30V 10A U-DFN2020-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 730mW (Ta)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type E)
  • Package / Case: 6-UDFN Exposed Pad
Package: 6-UDFN Exposed Pad
Stock241,434
MOSFET (Metal Oxide)
30V
10A (Ta)
4.5V, 10V
2V @ 250µA
25.1nC @ 10V
1415pF @ 15V
±20V
-
730mW (Ta)
12 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type E)
6-UDFN Exposed Pad
hot ZXMN2F30FHTA
Diodes Incorporated

MOSFET N-CH 20V 4.1A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 452pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 2.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock2,385,024
MOSFET (Metal Oxide)
20V
4.1A (Ta)
2.5V, 4.5V
1.5V @ 250µA
4.8nC @ 4.5V
452pF @ 10V
±12V
-
960mW (Ta)
45 mOhm @ 2.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMN4060SVT-7
Diodes Incorporated

MOSFET N-CH 45V 4.8A TSOT26

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Package: SOT-23-6 Thin, TSOT-23-6
Stock121,116
MOSFET (Metal Oxide)
45V
4.8A (Ta)
4.5V, 10V
3V @ 250µA
22.4nC @ 10V
1287pF @ 25V
±20V
-
1.2W (Ta)
46 mOhm @ 4.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
hot DMN3018SSS-13
Diodes Incorporated

MOSFET N CH 30V 7.3A 8-SO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 15V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Package: 8-SOIC (0.154", 3.90mm Width)
Stock360,000
MOSFET (Metal Oxide)
30V
7.3A (Ta)
4.5V, 10V
2.1V @ 250µA
13.2nC @ 10V
697pF @ 15V
±25V
-
1.4W (Ta)
21 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
DMG7430LFG-7
Diodes Incorporated

MOSFET N-CH 30V 10.5A PWRDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1281pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8
  • Package / Case: 8-PowerWDFN
Package: 8-PowerWDFN
Stock88,728
MOSFET (Metal Oxide)
30V
10.5A (Ta)
4.5V, 10V
2.5V @ 250µA
26.7nC @ 10V
1281pF @ 15V
±20V
-
900mW (Ta)
11 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI3333-8
8-PowerWDFN
hot DMG6402LDM-7
Diodes Incorporated

MOSFET N-CH 30V 5.3A SOT26

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.12W (Ta)
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-26
  • Package / Case: SOT-23-6
Package: SOT-23-6
Stock36,000
MOSFET (Metal Oxide)
30V
5.3A (Ta)
4.5V, 10V
2V @ 250µA
9.2nC @ 10V
404pF @ 15V
±20V
-
1.12W (Ta)
27 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-26
SOT-23-6
DMN3053L-7
Diodes Incorporated

MOSFET N-CH 30V 4A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 676pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 760mW (Ta)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock25,392
MOSFET (Metal Oxide)
30V
4A (Ta)
2.5V, 10V
1.4V @ 250µA
17.2nC @ 10V
676pF @ 15V
±12V
-
760mW (Ta)
45 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
hot DMP3030SN-7
Diodes Incorporated

MOSFET P-CH 30V 700MA SC59-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 400mA, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-59-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock463,740
MOSFET (Metal Oxide)
30V
700mA (Ta)
4.5V, 10V
3V @ 1mA
-
160pF @ 10V
±20V
-
500mW (Ta)
250 mOhm @ 400mA, 10V
-65°C ~ 150°C (TJ)
Surface Mount
SC-59-3
TO-236-3, SC-59, SOT-23-3
hot BSS123TA
Diodes Incorporated

MOSFET N-CH 100V 170MA SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock138,840
MOSFET (Metal Oxide)
100V
170mA (Ta)
4.5V, 10V
2.8V @ 1mA
-
20pF @ 25V
±20V
-
360mW (Ta)
6 Ohm @ 100mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
hot DMP2215L-7
Diodes Incorporated

MOSFET P-CH 20V 2.7A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.08W (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock355,728
MOSFET (Metal Oxide)
20V
2.7A (Ta)
2.5V, 4.5V
1.25V @ 250µA
5.3nC @ 4.5V
250pF @ 10V
±12V
-
1.08W (Ta)
100 mOhm @ 2.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
BSS127SSN-7
Diodes Incorporated

MOSFET N-CH 600V 50MA SC59

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.08nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 21.8pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 610mW (Ta)
  • Rds On (Max) @ Id, Vgs: 160 Ohm @ 16mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-59
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock104,640
MOSFET (Metal Oxide)
600V
50mA (Ta)
5V, 10V
4.5V @ 250µA
1.08nC @ 10V
21.8pF @ 25V
±20V
-
610mW (Ta)
160 Ohm @ 16mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SC-59
TO-236-3, SC-59, SOT-23-3
DMP31D0U-7
Diodes Incorporated

MOSFET P-CH 30V 530MA SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 76pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 450mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 400mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock25,620
MOSFET (Metal Oxide)
30V
530mA (Ta)
1.8V, 4.5V
1.1V @ 250µA
0.9nC @ 4.5V
76pF @ 15V
±8V
-
450mW (Ta)
1 Ohm @ 400mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
hot DMG2301U-7
Diodes Incorporated

MOSFET P-CH 20V 2.5A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 6V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock628,380
MOSFET (Metal Oxide)
20V
2.5A (Ta)
2.5V, 4.5V
1V @ 250µA
6.5nC @ 4.5V
608pF @ 6V
±8V
-
800mW (Ta)
130 mOhm @ 2.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMG2301LK-7
Diodes Incorporated

MOSFET P-CHA 20V 2.4A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 6V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 840mW (Ta)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock112,482
MOSFET (Metal Oxide)
20V
2.4A (Ta)
1.8V, 4.5V
1V @ 250µA
3.4nC @ 10V
156pF @ 6V
±12V
-
840mW (Ta)
160 mOhm @ 1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
hot DMN3150L-7
Diodes Incorporated

MOSFET N-CH 28V 3.2A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 28V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 5V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock456,000
MOSFET (Metal Oxide)
28V
3.8A (Ta)
2.5V, 10V
1.4V @ 250µA
-
305pF @ 5V
±12V
-
1.4W (Ta)
85 mOhm @ 3.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
hot DMN2004WK-7
Diodes Incorporated

MOSFET N-CH 20V 540MA SC70-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
Package: SC-70, SOT-323
Stock660,000
MOSFET (Metal Oxide)
20V
540mA (Ta)
1.8V, 4.5V
1V @ 250µA
-
150pF @ 16V
±8V
-
200mW (Ta)
550 mOhm @ 540mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
hot DMG3402L-7
Diodes Incorporated

MOSFET N-CH 30V 4A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 464pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock6,928
MOSFET (Metal Oxide)
30V
4A (Ta)
2.5V, 10V
1.4V @ 250µA
11.7nC @ 10V
464pF @ 15V
±12V
-
1.4W (Ta)
52 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
DMP21D0UT-7
Diodes Incorporated

MOSFET P-CH 20V 0.59A SOT523

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.54nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 240mW (Ta)
  • Rds On (Max) @ Id, Vgs: 495 mOhm @ 400mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
Package: SOT-523
Stock67,728
MOSFET (Metal Oxide)
20V
590mA (Ta)
1.8V, 4.5V
700mV @ 250µA
1.54nC @ 8V
80pF @ 10V
±8V
-
240mW (Ta)
495 mOhm @ 400mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
hot DMN2990UFZ-7B
Diodes Incorporated

MOSFET N-CH 20V .25A X2-DFN0606

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 55.2pF @ 16V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 320mW (Ta)
  • Rds On (Max) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN0606-3
  • Package / Case: 3-XFDFN
Package: 3-XFDFN
Stock238,944
MOSFET (Metal Oxide)
20V
250mA (Ta)
1.2V, 4.5V
1V @ 250µA
0.5nC @ 4.5V
55.2pF @ 16V
±8V
-
320mW (Ta)
990 mOhm @ 100mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN0606-3
3-XFDFN
DMN31D5UFZ-7B
Diodes Incorporated

MOSFET N-CH 30V .22A X2-DFN0606-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 22.2pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 393mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN0606-3
  • Package / Case: 3-XFDFN
Package: 3-XFDFN
Stock93,702
MOSFET (Metal Oxide)
30V
220mA (Ta)
1.2V, 4.5V
1V @ 250µA
0.35nC @ 4.5V
22.2pF @ 15V
±12V
-
393mW (Ta)
1.5 Ohm @ 100mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN0606-3
3-XFDFN
DMN3067LW-7
Diodes Incorporated

MOSFET N-CH 30V 2.6A SOT-323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 447pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 67 mOhm @ 2.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
Package: SC-70, SOT-323
Stock25,974
MOSFET (Metal Oxide)
30V
2.6A (Ta)
2.5V, 4.5V
1.5V @ 250µA
4.6nC @ 4.5V
447pF @ 10V
±12V
-
500mW (Ta)
67 mOhm @ 2.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
DMP32D4SW-7
Diodes Incorporated

MOSFET P-CH 30V 0.25A SOT323

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 51.16pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
Package: SC-70, SOT-323
Stock22,116
MOSFET (Metal Oxide)
30V
250mA (Ta)
4.5V, 10V
2.4V @ 250µA
1.2nC @ 10V
51.16pF @ 15V
±20V
-
300mW (Ta)
2.4 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
DMG6402LVT-7
Diodes Incorporated

MOSFET N-CH 30V 6A TSOT26

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 498pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Ta)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Package: SOT-23-6 Thin, TSOT-23-6
Stock22,140
MOSFET (Metal Oxide)
30V
6A (Ta)
4.5V, 10V
2V @ 250µA
11.4nC @ 10V
498pF @ 15V
±20V
-
1.75W (Ta)
30 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
hot DMP2160U-7
Diodes Incorporated

MOSFET P-CH 20V 3.2A SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 627pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock42,360
MOSFET (Metal Oxide)
20V
3.2A (Ta)
1.8V, 4.5V
900mV @ 250µA
-
627pF @ 10V
±12V
-
1.4W (Ta)
80 mOhm @ 1.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMN10H700S-7
Diodes Incorporated

MOSFET N-CHA 100V 700MA SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock82,008
MOSFET (Metal Oxide)
100V
700mA (Ta)
6V, 10V
4V @ 250µA
4.6nC @ 10V
235pF @ 50V
±20V
-
400mW (Ta)
700 mOhm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
DMP2100U-7
Diodes Incorporated

MOSFET P CH 20V 4.3A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 216pF @ 15V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock345,990
MOSFET (Metal Oxide)
20V
4.3A (Ta)
1.8V, 10V
1.4V @ 250µA
9.1nC @ 4.5V
216pF @ 15V
±10V
-
800mW (Ta)
38 mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
DMP32D4S-13
Diodes Incorporated

MOSFET P-CH 30V 300MA SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 51.16pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 370mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 300mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock224,262
MOSFET (Metal Oxide)
30V
300mA (Ta)
4.5V, 10V
2.4V @ 250µA
0.6nC @ 4.5V
51.16pF @ 15V
±20V
-
370mW (Ta)
2.4 Ohm @ 300mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3