Diodes Incorporated Products

FH2400049

Diodes Incorporated

CRYSTAL 24MHZ 10PF SMD

• Type: MHz Crystal
• Frequency: 24MHz
• Frequency Stability: ±30ppm
• Frequency Tolerance: ±30ppm
• Load Capacitance: 10pF
• ESR (Equivalent Series Resistance): 50 Ohm
• Operating Mode: Fundamental
• Operating Temperature: -40°C ~ 85°C
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
• Height - Seated (Max): 0.028" (0.70mm)

Package: 4-SMD, No Lead

DMT6002LPS-13

Diodes Incorporated

MOSFET BVDSS: 41V 60V POWERDI506

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 130.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6555pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.3W
• Rds On (Max) @ Id, Vgs: 2 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI5060-8
• Package / Case: 8-PowerTDFN

Package: 8-PowerTDFN

DMN5L06VA-7

Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT-563

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 280mA
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 200mA, 2.7V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
• Power - Max: 150mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Package: SOT-563, SOT-666

DDTB143EC-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT23-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 4.7k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

Package: TO-236-3, SC-59, SOT-23-3

DDC115EU-7-F

Diodes Incorporated

TRANS 2NPN PREBIAS 0.2W SOT363

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 100k
• Resistor - Emitter Base (R2) (Ohms): 100k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

Package: 6-TSSOP, SC-88, SOT-363

DDZ9707S-7

Diodes Incorporated

DIODE ZENER 20V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 50nA @ 15.2V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

Package: SC-76, SOD-323

DDZ30D-7

Diodes Incorporated

DIODE ZENER 30V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±2.5%
• Power - Max: 310mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 23V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

Package: SOD-123

DDZ7V5C-7

Diodes Incorporated

DIODE ZENER 7.5V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±3%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 6 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 6V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

Package: SOD-123

PR1004L-T

Diodes Incorporated

DIODE GEN PURP 400V 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -65°C ~ 150°C

Package: DO-204AL, DO-41, Axial

PDU340-13

Diodes Incorporated

DIODE GEN PURP 400V 3A POWERDI5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI? 5
• Supplier Device Package: PowerDI? 5
• Operating Temperature - Junction: -65°C ~ 175°C

Package: PowerDI? 5

US1MDFQ-13

Diodes Incorporated

DIODE GEN PURP 1KV 1A DFLAT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: D-Flat
• Operating Temperature - Junction: -55°C ~ 150°C

Package: 2-SMD, Flat Lead

UF1001-T

Diodes Incorporated

DIODE GEN PURP 50V 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -65°C ~ 150°C

Package: DO-204AL, DO-41, Axial

MBRB20150CT

Diodes Incorporated

DIODE SCHOTTKY 150V 20A D2PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 150V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PBPC1004

Diodes Incorporated

RECT BRIDGE 10A 400V PBPC8

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Operating Temperature: -65°C ~ 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, PBPC-8
• Supplier Device Package: PBPC-8

Package: 4-Square, PBPC-8

AZ431LBNTR-G1

Diodes Incorporated

IC VREF SHUNT ADJ SOT23

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 1.24V
• Voltage - Output (Max): 18V
• Current - Output: 100mA
• Tolerance: ±1%
• Temperature Coefficient: 20ppm/°C Typical
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 80µA
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

Package: TO-236-3, SC-59, SOT-23-3

AP1701AWL-7

Diodes Incorporated

IC MPU RESET CIRC 4.63V SC59-3

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active Low
• Reset Timeout: 100 ms Minimum
• Voltage - Threshold: 4.63V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SC-59-3

Package: TO-236-3, SC-59, SOT-23-3

APX803S05-23SA-7

Diodes Incorporated

RESET GENERATOR SOT23

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 20 ms Minimum
• Voltage - Threshold: 2.25V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

PT8A95A06QE

Diodes Incorporated

HEATER CONTROLLER QSOP-24

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

PI3B16209AE

Diodes Incorporated

IC 18BIT BUS EXCHANGE SW 48TSSOP

• Type: Bus FET Exchange Switch
• Circuit: 9 x 2:2
• Independent Circuits: 1
• Current - Output High, Low: -
• Voltage Supply Source: Single Supply
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.240", 6.10mm Width)
• Supplier Device Package: 48-TSSOP

Package: 48-TFSOP (0.240", 6.10mm Width)

APX358SG-13

Diodes Incorporated

IC OPAMP GP 1MHZ RRO 8SOP

• Amplifier Type: General Purpose
• Number of Circuits: 2
• Output Type: Rail-to-Rail
• Slew Rate: 1 V/µs
• Gain Bandwidth Product: 1MHz
• -3db Bandwidth: -
• Current - Input Bias: 15nA
• Voltage - Input Offset: 1.7mV
• Current - Supply: 190µA
• Current - Output / Channel: 90mA
• Voltage - Supply, Single/Dual (±): 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

Package: 8-SOIC (0.154", 3.90mm Width)

PT8A2648WE

Diodes Incorporated

PIR CONTROLLER SO-16

• Type: Infrared (IR)
• Input Type: -
• Output Type: -
• Interface: -
• Current - Supply: 120µA
• Operating Temperature: -20°C ~ 70°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

PI6C20800SAE

Diodes Incorporated

IC CLOCK BUFFER 1:8 48TSSOP

• PLL: Yes
• Main Purpose: PCI Express (PCIe)
• Input: HCSL
• Output: HCSL
• Number of Circuits: 1
• Ratio - Input:Output: 1:8
• Differential - Input:Output: Yes/Yes
• Frequency - Max: 400MHz
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.240", 6.10mm Width)
• Supplier Device Package: 48-TSSOP

Package: 48-TFSOP (0.240", 6.10mm Width)

ABZ1117EH-5.0TRG1

Diodes Incorporated

IC REG LDO 1.0A SOT223

• Output Configuration: -
• Output Type: -
• Number of Regulators: -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: -
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

DMTH46M7SFVWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
• Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerDI3333-8 (SWP) Type UX
• Package / Case: 8-PowerVDFN

Package: -

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ZXMD63C02XTA

Diodes Incorporated

MOSFET N/P-CH 20V 8-MSOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A
• Rds On (Max) @ Id, Vgs: 130mOhm @ 1.7A, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V
• Power - Max: 1.04W
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: 8-MSOP

Package: -

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EMF21-7

Diodes Incorporated

TRANS NPN PREBIAS/PNP SOT563

• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (Ic) (Max): 100mA, 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V, 12V
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): 10kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 270 @ 10mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz, 280MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Package: -

Request a Quote

BZX84C7V5-7-F-79

Diodes Incorporated

DIODE ZENER 7.5V 300MW SOT23

• Voltage - Zener (Nom) (Vz): 7.5 V
• Tolerance: ±6%
• Power - Max: 300 mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 5 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

Package: -

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DMT3020LFDBQ-7

Diodes Incorporated

MOSFET 2N-CH 30V 7.7A 6UDFN

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
• Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
• Power - Max: 700mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-UDFN Exposed Pad
• Supplier Device Package: U-DFN2020-6 (Type B)

Package: -

SBR2M100SB-13

Diodes Incorporated

DIODE SBR 100V 2A SMB T&R

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 780 mV @ 2 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -55°C ~ 150°C

Package: -

AP7343Q-28FDZW-7

Diodes Incorporated

LDO CMOS LOWCURR W-DFN2020-6 T&R

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.25V
• Voltage - Output (Min/Fixed): 2.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 300mA
• Current - Quiescent (Iq): 60 µA
• Current - Supply (Max): -
• PSRR: 75dB (1kHz)
• Control Features: Current Limit, Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-WDFN Exposed Pad
• Supplier Device Package: W-DFN2020-6 (Type A1)

Package: -