Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO252-3
|
Package: - |
Stock5,632 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE SCHOTTKY 600V 4A TO252-3
|
Package: - |
Stock3,856 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2
|
Package: - |
Stock7,680 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2
|
Package: - |
Stock5,728 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2
|
Package: - |
Stock6,352 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2
|
Package: - |
Stock6,352 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2
|
Package: - |
Stock5,824 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2
|
Package: - |
Stock6,320 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO220-2
|
Package: TO-220-2 |
Stock5,552 |
|
650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 1200V 7.5A DIE
|
Package: Die |
Stock4,880 |
|
1200V | 7.5A (DC) | 1.8V @ 7.5A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 1200V | 380pF @ 1V, 1MHz | Surface Mount | Die | Sawn on foil | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 600V 10A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,024 |
|
600V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 600V | 480pF @ 1V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 600V 6A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,120 |
|
600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | - |
||
Infineon Technologies |
DIODE GEN PURPOSE SAWN WAFER
|
Package: - |
Stock4,832 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE SIC 600V 8A SAWN WAFER
|
Package: Die |
Stock3,536 |
|
600V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | Surface Mount | Die | Die | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE SIC 600V 8A SAWN WAFER
|
Package: Die |
Stock5,568 |
|
600V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | Surface Mount | Die | Die | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE SIC 600V 5A SAWN WAFER
|
Package: Die |
Stock2,736 |
|
600V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 600V | 240pF @ 1V, 1MHz | Surface Mount | Die | Die | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURPOSE SAWN WAFER
|
Package: - |
Stock6,528 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE SIC 600V 4A SAWN WAFER
|
Package: Die |
Stock2,544 |
|
600V | 4A (DC) | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | Surface Mount | Die | Die | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 1200V 15A TO247-3
|
Package: TO-247-3 |
Stock2,896 |
|
1200V | 15A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 305µA @ 1200V | 870pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 1200V 10A TO247-3
|
Package: TO-247-3 |
Stock7,216 |
|
1200V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 1200V | 580pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
Package: - |
Stock4,816 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
Package: - |
Stock7,664 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 10A DIE
|
Package: Die |
Stock2,336 |
|
1200V | 10A | 2.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 154ns | 200nA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
Package: - |
Stock3,344 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
Package: - |
Stock2,896 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 150A DIE
|
Package: Die |
Stock6,000 |
|
1200V | 150A | 2.7V @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | 355ns | 3µA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 5A DIE
|
Package: Die |
Stock6,144 |
|
1200V | 5A | 2.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 96ns | 100nA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
Package: - |
Stock3,328 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
Package: - |
Stock3,408 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
Package: - |
Stock5,264 |
|
- | - | - | - | - | - | - | - | - | - | - |