The L4970A is a highly efficient step-down power switching regulator capable of delivering up to 10A with an adjustable output voltage range from 5.1V to 40V. Utilizing BCD mixed technology and a DMOS output transistor, it achieves fast switching and low power loss.
2024-12-02
The IR2130S is a high-voltage, high-speed driver IC designed for controlling power MOSFETs and IGBTs, featuring three independent high-side and low-side output channels.
2024-11-27
The LM293D is an integrated dual-channel voltage comparator that operates over a wide voltage range and supports both single and dual power supply modes.
2024-11-25
The IR2102 is a high-voltage, high-speed gate driver designed for controlling power MOSFETs and IGBTs with independent high-side and low-side output channels.
2024-11-20
The TDA7560 is a high-performance Class AB audio power amplifier built using advanced BCD (Bipolar, CMOS, DMOS) technology.
2024-11-18
The IR2184S is a high-speed, high-voltage power MOSFET and IGBT driver, designed for driving both high-side and low-side channels in power electronics applications.
2024-11-13
The IR2113 is versatile, high-voltage, high-speed drivers designed to control power MOSFETs and IGBTs with precision and efficiency.
2024-11-12
The UA741CN is a high-performance monolithic operational amplifier built on a single silicon chip, designed for a broad spectrum of analog applications. It features a high gain and operates across a wide range of voltages, making it exceptionally suitable for use in integrators, summing amplifiers, and general feedback circuits.
2024-11-07
Melexis, a global microelectronics leader, has introduced the MLX91235, a coreless current sensor chip designed to accurately measure high currents flowing through PCB traces and busbars. Targeted at automotive and alternative mobility applications, the sensor supports use cases such as inverters, battery management systems (BMS), and low-voltage DC-DC converters.
November 23, 2024 View More
Nexperia has introduced a series of high-performance gate driver ICs for driving high-side and low-side N-channel MOSFETs in synchronous buck or half-bridge configurations. These ICs, available in automotive-grade and industrial-grade versions, deliver high current output and dynamic performance to enhance efficiency and robustness.
November 21, 2024 View More
STMicroelectronics has launched ST AIoT Craft, a web-based tool designed to simplify the development of AIoT (Artificial Intelligence of Things) projects and related network configurations. The tool focuses on leveraging the Machine Learning Core (MLC) of ST’s intelligent MEMS sensors, enabling efficient node-to-cloud solutions.
November 19, 2024 View More
A team from the Massachusetts Institute of Technology (MIT) has successfully developed a novel nanometer-scale 3D transistor using ultra-thin semiconductor materials. This transistor is the smallest 3D transistor known to date, with performance and functionality that can match or even exceed current silicon-based transistors. It is expected to open new pathways for the development of high-performance, energy-efficient electronic products. The related paper was published in the Nature Electronics journal on the 5th.
November 7, 2024 View More
Scientists at the Korea Institute of Materials Science have developed an ultra-thin composite film capable of absorbing over 99% of electromagnetic waves across various frequencies, including 5G, 6G, WiFi, and radar for autonomous vehicles, which could significantly enhance the reliability of wireless communication. The findings were published in Advanced Functional Materials.
November 7, 2024 View More
On October 22, the Semiconductor Industry Association (SEMI) released its 2024 silicon shipment forecast report in California. The report predicts that after a significant decline of 14.3% in 2023, global silicon wafer shipments will experience a smaller year-on-year drop of 2.4% in 2024.
October 22, 2024 View More
Developers now have access to enhanced storage and advanced functionalities with the STM32C0 microcontroller (MCU), enabling more sophisticated capabilities in resource-constrained and cost-sensitive embedded applications.
October 18, 2024 View More
November 26, 2024 View More
November 26, 2024 View More
Traction inverters are the main battery drain components in electric vehicles (EVs), with power levels up to 150kW or higher. The efficiency and performance of traction inverter directly affect the driving range of electric vehicle after a single charge. Therefore, in order to build the next generation of traction inverter systems, silicon carbide (SiC) field effect transistor (FET) is widely used in the industry to achieve higher reliability, efficiency and power density.
May 22, 2023 View More
Do you know the 8 application circuits of operational amplifiers?
April 24, 2023 View More
This technical presentation requires an understanding of how to configure an operational amplifier in a typical gain control circuit. The applications of linear and nonlinear digital potentiometers are discussed. This article gives an overview of the basic techniques required to convert audio and other potentiometer/op amp applications from conventional mechanical potentiometers to solid state potentiometers
April 21, 2023 View More
The current in an electronic circuit usually has to be limited. In USB ports, for example, excessive current must be prevented to provide reliable protection for the circuit. Also in the power bank, the battery must be prevented from discharging. Too high discharge current results in too large voltage drop of the battery and insufficient supply voltage of downstream devices
April 17, 2023 View More
Using advanced real-time control technologies such as motor control circuits with higher power density, higher integration and more efficient systems, better acoustic performance of the system can be achieved
April 13, 2023 View More
Brushless direct current (BLDC) motors have been widely used in household appliances, industrial equipment and automobiles. While brushless DC motors offer a more reliable and maintainable alternative to traditional brushless motors, they require more sophisticated electronics to drive them
April 3, 2023 View More
How to achieve precise motion control in industrial actuators
March 23, 2023 View More
The NCP51820 is a 650 V, high-speed, half-bridge driver capable of driving gallium nitride (" GaN ") power switches at dV/dt rates up to 200 V/ns. The full performance advantages of high voltage, high frequency and fast dV/dt edge rate switches can only be realized if the printed circuit board (PCB) can be properly designed to support this power switch. This paper will briefly introduce NCP51820 and the key points of PCB design of high performance GaN half bridge grid driver circuit using NCP51820
March 13, 2023 View More
DIODE GEN PURP 400V 1A DO204AL
DIODE GEN PURP 80V 100MA UMD2
MOSFET P-CH 30V 3.6A SOT-23-3
IC AMP HBT 6000MHZ SOT-89
IC INVERTER HEX SCHMITT 14-SOIC
IC OPAMP VFB 160MHZ RRO 14SOIC
RES SMD 0.01 OHM 1% 1/2W 2010
IC FLASH 256MBIT 100NS 64EASYBGA
IC ELECTRONIC FUSE 10DFN
Decodes both full HD MPEG-2 and H.264
TRANS PNP 100V 1A SOT23-3
TVS DIODE 33VWM 53.3VC SMB
FIXED IND 10UH 20A 5 MOHM TH
RES SMD 0.0005 OHM 1% 5W 3920
IC LOG DETECTOR/CTRLR 8-MSOP
CRYSTAL 24MHZ 8PF SMD
IC MCU 8BIT 14KB FLASH 20SSOP
IC MOTOR DRIVER PAR MFP10S