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Infineon Technologies |
TRANS RF NPN 12V 80MA MICRO-X1
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7.5GHz
- Noise Figure (dB Typ @ f): 2.3dB ~ 2.9dB @ 2GHz
- Gain: 12.5dB ~ 13.5dB
- Power - Max: 580mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 8V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: MICRO-X1
- Supplier Device Package: MICRO-X1
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Package: MICRO-X1 |
Stock5,760 |
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12V | 7.5GHz | 2.3dB ~ 2.9dB @ 2GHz | 12.5dB ~ 13.5dB | 580mW | 50 @ 30mA, 8V | 80mA | 200°C (TJ) | Surface Mount | MICRO-X1 | MICRO-X1 |
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Infineon Technologies |
TRANSISTOR RF NPN 6V TSLP-3
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 9V
- Frequency - Transition: 14GHz
- Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
- Gain: 11.5dB ~ 16dB
- Power - Max: 210mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: PG-TSLP-3
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Package: SC-101, SOT-883 |
Stock2,288 |
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9V | 14GHz | 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz | 11.5dB ~ 16dB | 210mW | 90 @ 15mA, 3V | 35mA | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | PG-TSLP-3 |
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CEL |
SAME AS 2SC4093 NPN SILICON AMPL
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
- Gain: 13dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143
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Package: TO-253-4, TO-253AA |
Stock3,728 |
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12V | 9GHz | 1.1dB @ 1GHz | 13dB | 200mW | 50 @ 20mA, 10V | 100mA | 150°C (TJ) | Surface Mount | TO-253-4, TO-253AA | SOT-143 |
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ON Semiconductor |
TRANS NPN BIPO VHF-UHF SMCP
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1dB @ 1GHz
- Gain: 12dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
- Current - Collector (Ic) (Max): 70mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SMCP
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Package: SC-75, SOT-416 |
Stock6,576 |
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10V | 7GHz | 1dB @ 1GHz | 12dB | 100mW | 90 @ 20mA, 5V | 70mA | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SMCP |
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CEL |
RF TRANSISTOR NPN SOT-89
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 6GHz
- Noise Figure (dB Typ @ f): 2.3dB @ 1GHz
- Gain: 8.3dB
- Power - Max: 1.8W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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Package: TO-243AA |
Stock4,896 |
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12V | 6GHz | 2.3dB @ 1GHz | 8.3dB | 1.8W | 50 @ 50mA, 5V | 150mA | 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 |
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Broadcom Limited |
IC TRANS NPN GP BIPOLAR 86PP
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
- Gain: 8dB ~ 17dB
- Power - Max: 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
- Current - Collector (Ic) (Max): 60mA
- Operating Temperature: 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock4,624 |
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12V | 8GHz | 1.4dB ~ 3dB @ 1GHz ~ 4GHz | 8dB ~ 17dB | 500mW | 30 @ 10mA, 8V | 60mA | 200°C (TJ) | Surface Mount | Die | Die |
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Fairchild/ON Semiconductor |
TRANS RF NPN 25V 50MA TO-92
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: 650MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,352 |
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25V | 650MHz | - | - | 350mW | 60 @ 4mA, 10V | 50mA | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS RF NPN 12V 50MA TO-92
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 2GHz
- Noise Figure (dB Typ @ f): 5dB @ 200MHz
- Gain: 15dB
- Power - Max: 350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,248 |
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12V | 2GHz | 5dB @ 200MHz | 15dB | 350mW | 25 @ 3mA, 1V | 50mA | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS RF NPN 20V 100MA TO-92
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 700MHz
- Noise Figure (dB Typ @ f): 3dB @ 200MHz
- Gain: -
- Power - Max: 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,904 |
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20V | 700MHz | 3dB @ 200MHz | - | 625mW | 40 @ 20mA, 10V | 100mA | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Broadcom Limited |
TRANS NPN BIPO 12V 50MA SOT-23
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz
- Gain: 9dB ~ 14.5dB
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock45,600 |
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12V | - | 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz | 9dB ~ 14.5dB | 225mW | 30 @ 5mA, 5V | 50mA | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Fairchild/ON Semiconductor |
TRANSISTOR NPN 30V 20MA TO-92
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: 700MHz
- Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz
- Gain: 20dB ~ 24dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 10V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock4,496 |
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30V | 700MHz | 2dB ~ 3dB @ 200MHz | 20dB ~ 24dB | 250mW | 60 @ 2mA, 10V | 20mA | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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CEL |
TRANS NPN HF FT=12GHZ SOT-363
- Transistor Type: 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 12GHz
- Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
- Gain: -
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-SO
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock211,452 |
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6V | 12GHz | 1.5dB ~ 2.5dB @ 2GHz | - | 200mW | 75 @ 10mA, 3V | 30mA | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-SO |
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NXP |
TRANS NPN 15V 25MA 3GHZ SOT23
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 2.8GHz
- Noise Figure (dB Typ @ f): 2.5dB @ 800MHz
- Gain: -
- Power - Max: 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
- Current - Collector (Ic) (Max): 25mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,016 |
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15V | 2.8GHz | 2.5dB @ 800MHz | - | 300mW | 25 @ 2mA, 1V | 25mA | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
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Infineon Technologies |
TRANS RF NPN 15V 25MA SOT363
- Transistor Type: 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 1.4GHz
- Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 800MHz
- Gain: -
- Power - Max: 280mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
- Current - Collector (Ic) (Max): 25mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
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Package: 6-VSSOP, SC-88, SOT-363 |
Stock5,440 |
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15V | 1.4GHz | 3dB ~ 5dB @ 800MHz | - | 280mW | 40 @ 2mA, 1V | 25mA | 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
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Microsemi Corporation |
TRANS RF BIPO 350W 15A 55KS1
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 2.7GHz ~ 2.9GHz
- Noise Figure (dB Typ @ f): -
- Gain: 9dB ~ 9.5dB
- Power - Max: 350W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 600mA, 5V
- Current - Collector (Ic) (Max): 15A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55KS-1
- Supplier Device Package: 55KS-1
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Package: 55KS-1 |
Stock5,008 |
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65V | 2.7GHz ~ 2.9GHz | - | 9dB ~ 9.5dB | 350W | 18 @ 600mA, 5V | 15A | 200°C (TJ) | Chassis Mount | 55KS-1 | 55KS-1 |
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Microsemi Corporation |
TRANS RF BIPO 575W 20A M214
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 60V
- Frequency - Transition: 960MHz ~ 1.215GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8dB ~ 8.7dB
- Power - Max: 575W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
- Current - Collector (Ic) (Max): 20A
- Operating Temperature: 250°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M214
- Supplier Device Package: M214
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Package: M214 |
Stock4,592 |
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60V | 960MHz ~ 1.215GHz | - | 8dB ~ 8.7dB | 575W | 10 @ 1A, 5V | 20A | 250°C (TJ) | Chassis Mount | M214 | M214 |
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Microsemi Corporation |
TRANS RF BIPO 270W 20A TO-220AC
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 18V
- Frequency - Transition: 136MHz ~ 175MHz
- Noise Figure (dB Typ @ f): -
- Gain: 6dB
- Power - Max: 270W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
- Current - Collector (Ic) (Max): 20A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: M111
- Supplier Device Package: M111
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Package: M111 |
Stock3,344 |
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18V | 136MHz ~ 175MHz | - | 6dB | 270W | 10 @ 5A, 5V | 20A | 200°C (TJ) | Surface Mount | M111 | M111 |
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Microsemi Corporation |
TRANS BIPO NPN M122
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: 860MHz
- Noise Figure (dB Typ @ f): -
- Gain: 10dB
- Power - Max: 19.4W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 1.2A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis, Stud Mount
- Package / Case: M122
- Supplier Device Package: M122
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Package: M122 |
Stock7,984 |
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25V | 860MHz | - | 10dB | 19.4W | - | 1.2A | 200°C (TJ) | Chassis, Stud Mount | M122 | M122 |
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Panasonic Electronic Components |
TRANS NPN 10VCEO 80MA SSMINI-3
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 6GHz
- Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 800MHz
- Gain: 11dB ~ 14dB
- Power - Max: 125mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SSMini3-F3
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Package: SC-89, SOT-490 |
Stock22,608 |
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10V | 6GHz | 1.3dB ~ 2dB @ 800MHz | 11dB ~ 14dB | 125mW | 50 @ 20mA, 8V | 80mA | 125°C (TJ) | Surface Mount | SC-89, SOT-490 | SSMini3-F3 |
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Fairchild/ON Semiconductor |
TRANSISTOR RF NPN SOT-23
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: 650MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock36,000 |
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25V | 650MHz | - | - | 225mW | 60 @ 4mA, 10V | 50mA | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Infineon Technologies |
TRANSISTOR NPN RF 12V SOT-143
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
- Gain: 22dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: PG-SOT143-4
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Package: TO-253-4, TO-253AA |
Stock22,506 |
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12V | 8GHz | 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz | 22dB | 250mW | 70 @ 15mA, 8V | 65mA | 150°C (TJ) | Surface Mount | TO-253-4, TO-253AA | PG-SOT143-4 |
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NXP |
TRANSISTOR NPN 10V 8.5GHZ SOT323
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 8.5GHz
- Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
- Gain: -
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323-3
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Package: SC-70, SOT-323 |
Stock95,382 |
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10V | 8.5GHz | 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz | - | 250mW | 50 @ 5mA, 6V | 50mA | 175°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323-3 |
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Fairchild/ON Semiconductor |
TRANSISTOR RF NPN SOT-23
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: 650MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock8,018,004 |
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25V | 650MHz | - | - | 225mW | 60 @ 4mA, 10V | 50mA | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Ampleon USA Inc. |
C5H2350N10/DFN-4.5X4-6-1/TR7, 10
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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onsemi |
TRANSISTOR
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: 320MHz
- Noise Figure (dB Typ @ f): -
- Gain: 25dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CP
|
Package: - |
Request a Quote |
|
- | 320MHz | - | 25dB | 150mW | 135 @ 1mA, 6V | 30mA | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3-CP |
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Infineon Technologies |
LOW-NOISE SI TRANSISTOR
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 3.5V
- Frequency - Transition: 45GHz
- Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
- Gain: 22.5dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
- Current - Collector (Ic) (Max): 40mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-TSFP
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Package: - |
Request a Quote |
|
3.5V | 45GHz | 0.95dB @ 1.8GHz | 22.5dB | 100mW | 70 @ 20mA, 2V | 40mA | 150°C (TJ) | Surface Mount | 4-SMD, Flat Leads | 4-TSFP |
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MACOM Technology Solutions |
TRANSISTOR,BIPOLAR,RADAR,300W,1.
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 90V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 8.75dB
- Power - Max: 583W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 21A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 2L-FLG
- Supplier Device Package: 2L-FLG
|
Package: - |
Request a Quote |
|
90V | - | - | 8.75dB | 583W | - | 21A | 200°C (TJ) | Chassis Mount | 2L-FLG | 2L-FLG |
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Central Semiconductor Corp |
RF TRANSISTOR TO-39
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: 500MHz
- Noise Figure (dB Typ @ f): -
- Gain: 10dB
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
- Current - Collector (Ic) (Max): 400mA
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
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30V | 500MHz | - | 10dB | - | 10 @ 50mA, 5V | 400mA | -65°C ~ 150°C (TJ) | Surface Mount | Die | Die |