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Transistors - Bipolar (BJT) - Single, Pre-Biased

Records 4,130
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Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Resistor - Base (R1) (Ohms)
Resistor - Emitter Base (R2) (Ohms)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
Frequency - Transition
Power - Max
Mounting Type
Package / Case
Supplier Device Package
RN2108ACT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W CST3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Package: SC-101, SOT-883
Stock7,664
80mA
50V
22k
47k
80 @ 10mA, 5V
150mV @ 250µA, 5mA
500nA
-
100mW
Surface Mount
SC-101, SOT-883
CST3
PBRN113ZS,126
NXP

TRANS PREBIAS NPN 0.7W TO92-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 700mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock3,088
800mA
40V
1k
10k
500 @ 300mA, 5V
1.15V @ 8mA, 800mA
500nA
-
700mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJNS4206RTA
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92S

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
  • Supplier Device Package: TO-92S
Package: TO-226-3, TO-92-3 Short Body (Formed Leads)
Stock3,440
100mA
50V
10k
47k
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body (Formed Leads)
TO-92S
FJN4312RBU
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Package: TO-226-3, TO-92-3 (TO-226AA)
Stock2,160
100mA
40V
47k
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN4312RTA
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock5,536
100mA
40V
47k
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
DDTC113TCA-7
Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT23-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock7,824
100mA
50V
1k
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
500nA (ICBO)
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
PDTC114YMB,315
Nexperia USA Inc.

TRANS PREBIAS NPN 250MW 3DFN

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 230MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 3-XFDFN
  • Supplier Device Package: 3-DFN1006B (0.6x1)
Package: 3-XFDFN
Stock4,128
100mA
50V
10k
47k
100 @ 5mA, 5V
100mV @ 250µA, 5mA
1µA
230MHz
250mW
Surface Mount
3-XFDFN
3-DFN1006B (0.6x1)
DTC114WETL
Rohm Semiconductor

TRANS PREBIAS NPN 150MW EMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: EMT3
Package: SC-75, SOT-416
Stock2,384
100mA
50V
10k
4.7k
24 @ 10mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
150mW
Surface Mount
SC-75, SOT-416
EMT3
hot DDTB122JC-7-F
Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT23-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 220
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock432,000
500mA
50V
220
4.7k
47 @ 50mA, 5V
300mV @ 2.5mA, 50mA
500nA
200MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DTA113EET1G
ON Semiconductor

TRANS PREBIAS PNP 0.2W SC75

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 1k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SC-75
Package: SC-75, SOT-416
Stock4,496
100mA
50V
1k
1k
3 @ 5mA, 10V
250mV @ 5mA, 10mA
500nA
-
200mW
Surface Mount
SC-75, SOT-416
SC-75
DTC124XM3T5G
ON Semiconductor

TRANS PREBIAS NPN 260MW SOT723

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 260mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: SOT-723
Package: SOT-723
Stock3,072
100mA
50V
22k
47k
80 @ 5mA, 10V
250mV @ 1mA, 10mA
500nA
-
260mW
Surface Mount
SOT-723
SOT-723
PDTA124TT,215
Nexperia USA Inc.

TRANS PREBIAS PNP 250MW TO236AB

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
Package: TO-236-3, SC-59, SOT-23-3
Stock4,784
100mA
50V
22k
-
100 @ 1mA, 5V
150mV @ 500µA, 10mA
1µA
-
250mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
RN1104MFV,L3F
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.15W VESM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
Package: SOT-723
Stock5,904
100mA
50V
47k
47k
80 @ 10mA, 5V
300mV @ 500µA, 5mA
500nA
-
150mW
Surface Mount
SOT-723
VESM
PDTA123ET,215
Nexperia USA Inc.

TRANS PREBIAS PNP 250MW TO236AB

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
Package: TO-236-3, SC-59, SOT-23-3
Stock3,168
100mA
50V
2.2k
2.2k
30 @ 20mA, 5V
150mV @ 500µA, 10mA
100nA (ICBO)
-
250mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
DTC123YCAT116
Rohm Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SST3
Package: TO-236-3, SC-59, SOT-23-3
Stock6,800
100mA
50V
2.2k
10k
33 @ 10mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SST3
FJN4303RTA
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock2,688
100mA
50V
22k
22k
56 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot DTA123JUAT106
Rohm Semiconductor

TRANS PREBIAS PNP 200MW UMT3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: UMT3
Package: SC-70, SOT-323
Stock1,101,180
100mA
50V
2.2k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
200mW
Surface Mount
SC-70, SOT-323
UMT3
DRC9143T0L
Panasonic Electronic Components

TRANS PREBIAS NPN 125MW SSMINI3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F3-B
Package: SC-89, SOT-490
Stock7,776
100mA
50V
4.7k
-
160 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
125mW
Surface Mount
SC-89, SOT-490
SSMini3-F3-B
DRC5144G0L
Panasonic Electronic Components

TRANS PREBIAS NPN 150MW SMINI3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): -
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2-B
Package: SC-85
Stock5,136
100mA
50V
-
47k
80 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
150mW
Surface Mount
SC-85
SMini3-F2-B
DDTD114TU-7-F
Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT323

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
Package: SC-70, SOT-323
Stock5,104
500mA
50V
10k
-
100 @ 5mA, 5V
300mV @ 2.5mA, 50mA
500nA (ICBO)
200MHz
200mW
Surface Mount
SC-70, SOT-323
SOT-323
DDTA144VE-7
Diodes Incorporated

TRANS PREBIAS PNP 150MW SOT523

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
Package: SOT-523
Stock22,890
100mA
50V
47k
10k
33 @ 10mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
150mW
Surface Mount
SOT-523
SOT-523
hot UNR921MJ0L
Panasonic Electronic Components

TRANS PREBIAS NPN 125MW SSMINI3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F1
Package: SC-89, SOT-490
Stock504,000
100mA
50V
2.2k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
125mW
Surface Mount
SC-89, SOT-490
SSMini3-F1
UNR521V00L
Panasonic Electronic Components

TRANS PREBIAS NPN 150MW SMINI3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 6mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1.5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SMini3-G1
Package: SC-70, SOT-323
Stock117,840
100mA
50V
2.2k
2.2k
6 @ 6mA, 10V
250mV @ 1.5mA, 10mA
500nA
150MHz
150mW
Surface Mount
SC-70, SOT-323
SMini3-G1
RN2404,LF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V TO236-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
Package: TO-236-3, SC-59, SOT-23-3
Stock52,368
100mA
50V
47k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
DTC123YE3TL
Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A EMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 22 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250 MHz
  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: EMT3
Package: -
Stock8,910
100 mA
50 V
22 kOhms
22 kOhms
56 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA (ICBO)
250 MHz
150 mW
Surface Mount
SC-75, SOT-416
EMT3
RN2303-LF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 22 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
Package: -
Stock600
100 mA
50 V
22 kOhms
22 kOhms
70 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200 MHz
100 mW
Surface Mount
SC-70, SOT-323
SC-70
PDTC143XQCZ
Nexperia USA Inc.

TRANS PREBIAS NPN 50V 0.1A 3DFN

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 4.7 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA
  • Frequency - Transition: 230 MHz
  • Power - Max: 360 mW
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 3-XDFN Exposed Pad
  • Supplier Device Package: DFN1412D-3
Package: -
Stock15,000
100 mA
50 V
4.7 kOhms
10 kOhms
50 @ 10mA, 5V
100mV @ 500µA, 10mA
100nA
230 MHz
360 mW
Surface Mount, Wettable Flank
3-XDFN Exposed Pad
DFN1412D-3
DTA143EU3T106
Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A UMT3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 4.7 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: UMT3
Package: -
Stock684
100 mA
50 V
4.7 kOhms
4.7 kOhms
30 @ 10mA, 5V
300mV @ 500µA, 10mA
500nA
250 MHz
200 mW
Surface Mount
SC-70, SOT-323
UMT3
NHDTC114YUX
Nexperia USA Inc.

TRANS PREBIAS NPN 80V SOT323

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Resistor - Base (R1) (Ohms): 10 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA
  • Frequency - Transition: 170 MHz
  • Power - Max: 235 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
Package: -
Stock80,790
100 mA
80 V
10 kOhms
47 kOhms
100 @ 10mA, 5V
100mV @ 500µA, 10mA
100nA
170 MHz
235 mW
Surface Mount
SC-70, SOT-323
SOT-323
2SA1502-TB-E
onsemi

TRANS PREBIAS PNP 50V

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Resistor - Base (R1) (Ohms): -
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: -
  • Power - Max: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Package: -
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