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Transistors - FETs, MOSFETs - Arrays

Records 5,684
Page  20/190
Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRF7754
Infineon Technologies

MOSFET 2P-CH 12V 5.5A 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
Package: 8-TSSOP (0.173", 4.40mm Width)
Stock4,720
Logic Level Gate
12V
5.5A
25 mOhm @ 5.4A, 4.5V
900mV @ 250µA
22nC @ 4.5V
1984pF @ 6V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot AO4803L
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 5A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Package: 8-SOIC (0.154", 3.90mm Width)
Stock288,768
Standard
30V
5A
52 mOhm @ 5A, 10V
2.4V @ 250µA
11nC @ 10V
520pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI4920DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Package: 8-SOIC (0.154", 3.90mm Width)
Stock596,532
Logic Level Gate
30V
-
25 mOhm @ 6.9A, 10V
1V @ 250µA (Min)
23nC @ 5V
-
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SI5511DC-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 30V 4A 1206-8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
  • Power - Max: 3.1W, 2.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
Package: 8-SMD, Flat Lead
Stock3,840
Logic Level Gate
30V
4A, 3.6A
55 mOhm @ 4.8A, 4.5V
2V @ 250µA
7.1nC @ 5V
435pF @ 15V
3.1W, 2.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
hot SSM6P15FE(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 0.1A ES6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
Package: SOT-563, SOT-666
Stock1,056,000
Logic Level Gate
30V
100mA
12 Ohm @ 10mA, 4V
1.7V @ 100µA
-
9.1pF @ 3V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
FMM150-0075P
IXYS

MOSFET 2N-CH 75V 150A I4-PAC-5

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 150A
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 120A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5
  • Supplier Device Package: ISOPLUS i4-PAC?
Package: i4-Pac?-5
Stock3,504
Standard
75V
150A
4.2 mOhm @ 120A, 10V
4V @ 1mA
225nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Through Hole
i4-Pac?-5
ISOPLUS i4-PAC?
BSO207PHXUMA1
Infineon Technologies

MOSFET 2P-CH 20V 5A 8DSO

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 44µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
Package: 8-SOIC (0.154", 3.90mm Width)
Stock6,096
Logic Level Gate
20V
5A
45 mOhm @ 5.7A, 4.5V
1.2V @ 44µA
16nC @ 4.5V
1650pF @ 15V
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
APTM100A23STG
Microsemi Corporation

MOSFET 2N-CH 1000V 36A SP4

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 36A
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 308nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
  • Power - Max: 694W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
Package: SP4
Stock7,088
Standard
1000V (1kV)
36A
270 mOhm @ 18A, 10V
5V @ 5mA
308nC @ 10V
8700pF @ 25V
694W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
hot SI4808DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 5.7A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Package: 8-SOIC (0.154", 3.90mm Width)
Stock396,420
Logic Level Gate
30V
5.7A
22 mOhm @ 7.5A, 10V
800mV @ 250µA (Min)
20nC @ 10V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMHT6016LFJ-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V V-DFN5045-

  • FET Type: 4 N-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-VDFN Exposed Pad
  • Supplier Device Package: V-DFN5045-12
Package: 12-VDFN Exposed Pad
Stock5,744
Standard
-
14.8A (Ta)
22 mOhm @ 10A, 10V
3V @ 250µA
8.4nC @ 4.5V
864pF @ 30V
-
-55°C ~ 150°C (TJ)
Surface Mount
12-VDFN Exposed Pad
V-DFN5045-12
QS8J5TR
Rohm Semiconductor

MOSFET 2P-CH 30V 5A TSMT8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
  • Power - Max: 600mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
Package: 8-SMD, Flat Lead
Stock7,600
Logic Level Gate
30V
5A
39 mOhm @ 5A, 10V
2.5V @ 1mA
19nC @ 10V
1100pF @ 10V
600mW
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
ECH8659-TL-W
ON Semiconductor

MOSFET 2N-CH 30V 7A ECH8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V
  • Power - Max: 1.3W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: -
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: SOT-28FL/ECH8
Package: 8-SMD, Flat Lead
Stock6,656
Logic Level Gate, 4V Drive
30V
7A
24 mOhm @ 3.5A, 10V
2.6V @ 1mA
11.8nC @ 10V
710pF @ 10V
1.3W
150°C (TJ)
-
8-SMD, Flat Lead
SOT-28FL/ECH8
hot EFC4618R-P-TR
ON Semiconductor

MOSFET 2N-CH EFCP1818

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 25.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.6W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XBGA, 4-FCBGA
  • Supplier Device Package: EFCP1313-4CC-037
Package: 4-XBGA, 4-FCBGA
Stock43,620
Logic Level Gate, 2.5V Drive
-
-
-
-
25.4nC @ 4.5V
-
1.6W
150°C (TJ)
Surface Mount
4-XBGA, 4-FCBGA
EFCP1313-4CC-037
hot FDY3000NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 0.6A SC89

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 600mA
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
  • Power - Max: 446mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
Package: SOT-563, SOT-666
Stock160,128
Logic Level Gate
20V
600mA
700 mOhm @ 600mA, 4.5V
1.3V @ 250µA
1.1nC @ 4.5V
60pF @ 10V
446mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
hot ZXMC3F31DN8TA
Diodes Incorporated

MOSFET N/P-CH 30V 6.8A/4.9A 8SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.9A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Package: 8-SOIC (0.154", 3.90mm Width)
Stock962,676
Logic Level Gate, 4.5V Drive
30V
6.8A, 4.9A
24 mOhm @ 7A, 10V
3V @ 250µA
12.9nC @ 10V
608pF @ 15V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SIA778DJ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 12V/20V SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A, 1.5A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
  • Power - Max: 6.5W, 5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
Package: PowerPAK? SC-70-6 Dual
Stock120,012
Logic Level Gate
12V, 20V
4.5A, 1.5A
29 mOhm @ 5A, 4.5V
1V @ 250µA
15nC @ 8V
500pF @ 6V
6.5W, 5W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
2N7002DWQ-7-F
Diodes Incorporated

MOSFET 2N-CH 60V 0.23A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 230mA
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 310mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Package: 6-TSSOP, SC-88, SOT-363
Stock2,272
Standard
60V
230mA
7.5 Ohm @ 50mA, 5V
2V @ 250µA
-
50pF @ 25V
310mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
QH8KA1TCR
Rohm Semiconductor

30V NCH+NCH POWER MOSFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 73 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
  • Power - Max: 2.4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
Package: 8-SMD, Flat Lead
Stock2,688
-
30V
4.5A
73 mOhm @ 4.5A, 10V
2.5V @ 1mA
3nC @ 10V
125pf @ 15V
2.4W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
hot DMP3085LSD-13
Diodes Incorporated

MOSFET 2P-CH 30V 3.9A 8SO

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 5.3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 563pF @ 25V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Package: 8-SOIC (0.154", 3.90mm Width)
Stock144,060
Logic Level Gate
30V
3.9A
70 mOhm @ 5.3A, 10V
3V @ 250µA
11nC @ 10V
563pF @ 25V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
BSC076N04NDATMA1
Infineon Technologies

MOSFET 2N-CH 40V 20A 8TDSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 20V
  • Power - Max: 2.3W (Ta), 65W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
Package: -
Stock13,440
-
40V
20A (Tc)
7.6mOhm @ 17A, 10V
4V @ 30µA
38nC @ 10V
2950pF @ 20V
2.3W (Ta), 65W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
PSMN045-100HLX
Nexperia USA Inc.

MOSFET 2N-CH 100V 21A LFPAK56D

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
  • Power - Max: 53W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
Package: -
Stock4,470
Logic Level Gate
100V
21A (Ta)
42mOhm @ 5A, 10V
2.1V @ 1mA
18.5nC @ 5V
2152pF @ 25V
53W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
FF11MR12W1M1B70BPSA1
Infineon Technologies

SIC 2N-CH 1200V AG-EASY1B

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
  • Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
  • Vgs(th) (Max) @ Id: 5.55V @ 40mA
  • Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1B
Package: -
Request a Quote
-
1200V (1.2kV)
100A (Tj)
11.3mOhm @ 100A, 15V
5.55V @ 40mA
248nC @ 15V
7360pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-EASY1B
FF11MR12W2M1HPB11BPSA1
Infineon Technologies

MOSFET 1200V

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Package: -
Stock54
-
1200V (1.2kV)
-
-
-
-
-
-
-
-
-
-
SP8K1FRATB
Rohm Semiconductor

MOSFET 2N-CH 30V 5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Package: -
Stock7,401
-
30V
5A (Ta)
51mOhm @ 5A, 10V
2.5V @ 1mA
5.5nC @ 5V
230pF @ 10V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
AOCA32116E
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 6A 4ALPHADFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.7W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: 4-AlphaDFN (1.2x1.2)
Package: -
Request a Quote
-
20V
6A (Ta)
36mOhm @ 3A, 4.5V
1.3V @ 250µA
5.5nC @ 4.5V
-
1.7W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, No Lead
4-AlphaDFN (1.2x1.2)
SI1965DH-T1-BE3
Vishay Siliconix

MOSFET 2P-CH 12V 1.3A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
  • Power - Max: 740mW (Ta), 1.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
Package: -
Request a Quote
-
12V
1.14A (Ta), 1.3A (Tc)
390mOhm @ 1A, 4.5V
1V @ 250µA
4.2nC @ 8V
120pF @ 6V
740mW (Ta), 1.25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
SH8K39GZETB
Rohm Semiconductor

MOSFET 2N-CH 60V 8A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Package: -
Request a Quote
-
60V
8A (Ta)
21mOhm @ 8A, 10V
2.7V @ 200µA
25nC @ 10V
1240pF @ 30V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
RFD14LN05SM
Fairchild Semiconductor

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMN31D5UDW-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT363 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 0.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V
  • Power - Max: 330mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Package: -
Request a Quote
-
30V
430mA (Ta)
1.5Ohm @ 100mA, 4.5V
0.9V @ 250µA
0.3nC @ 4.5V
15.4pF @ 15V
330mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
RF1S15N06
Harris Corporation

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-