Page 32 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products | Heisener Electronics
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Transistors - FETs, MOSFETs - Arrays

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Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SI7904DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 5.3A 1212-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 935µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
Package: PowerPAK? 1212-8 Dual
Stock5,088
Logic Level Gate
20V
5.3A
30 mOhm @ 7.7A, 4.5V
1V @ 935µA
15nC @ 4.5V
-
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
SI5915BDC-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 8V 4A 1206-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 4V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
Package: 8-SMD, Flat Lead
Stock3,584
Logic Level Gate
8V
4A
70 mOhm @ 3.3A, 4.5V
1V @ 250µA
14nC @ 8V
420pF @ 4V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
hot SI3905DV-T1-E3
Vishay Siliconix

MOSFET 2P-CH 8V 6-TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
Package: SOT-23-6 Thin, TSOT-23-6
Stock229,740
Logic Level Gate
8V
-
125 mOhm @ 2.5A, 4.5V
450mV @ 250µA (Min)
6nC @ 4.5V
-
1.15W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
hot NTLJD4116NT1G
ON Semiconductor

MOSFET 2N-CH 30V 2.5A 6-WDFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 15V
  • Power - Max: 710mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-WDFN (2x2)
Package: 6-WDFN Exposed Pad
Stock609,576
Logic Level Gate
30V
2.5A
70 mOhm @ 2A, 4.5V
1V @ 250µA
6.5nC @ 4.5V
427pF @ 15V
710mW
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-WDFN (2x2)
NTJD2152PT2
ON Semiconductor

MOSFET 2P-CH 8V 0.775A SOT-363

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 775mA
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 8V
  • Power - Max: 270mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
Package: 6-TSSOP, SC-88, SOT-363
Stock5,632
Logic Level Gate
8V
775mA
300 mOhm @ 570mA, 4.5V
1V @ 250µA
4nC @ 4.5V
225pF @ 8V
270mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
FDS6993
Fairchild/ON Semiconductor

MOSFET 2P-CH 30V/12V 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V, 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A, 6.8A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Package: 8-SOIC (0.154", 3.90mm Width)
Stock2,848
Logic Level Gate
30V, 12V
4.3A, 6.8A
55 mOhm @ 4.3A, 10V
3V @ 250µA
7.7nC @ 5V
530pF @ 15V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SP8M3TB
Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
  • Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Package: 8-SOIC (0.154", 3.90mm Width)
Stock104,232
Logic Level Gate
30V
5A, 4.5A
51 mOhm @ 5A, 10V
2.5V @ 1mA
3.9nC @ 5V
230pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
NTHC5513T1
ON Semiconductor

MOSFET N/P-CH 20V CHIPFET

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.2A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: ChipFET?
Package: 8-SMD, Flat Lead
Stock2,160
Logic Level Gate
20V
2.9A, 2.2A
80 mOhm @ 2.9A, 4.5V
1.2V @ 250µA
4nC @ 4.5V
180pF @ 10V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
ChipFET?
APTM20TAM16FPG
Microsemi Corporation

MOSFET 6N-CH 200V 104A SP6-P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 104A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
Package: SP6
Stock4,448
Standard
200V
104A
19 mOhm @ 52A, 10V
5V @ 2.5mA
140nC @ 10V
7220pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
APTC60HM24T3G
Microsemi Corporation

MOSFET 4N-CH 600V 95A SP3

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Super Junction
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 95A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
  • Power - Max: 462W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
Package: SP3
Stock7,888
Super Junction
600V
95A
24 mOhm @ 47.5A, 10V
3.9V @ 5mA
300nC @ 10V
14400pF @ 25V
462W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
APTM50DSKM65T3G
Microsemi Corporation

MOSFET 2N-CH 500V 51A SP3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 51A
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
Package: SP3
Stock3,504
Standard
500V
51A
78 mOhm @ 25.5A, 10V
5V @ 2.5mA
140nC @ 10V
7000pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
GWM100-01X1-SMDSAM
IXYS

MOSFET 6N-CH 100V 90A ISOPLUS

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 90A
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Gull Wing
  • Supplier Device Package: ISOPLUS-DIL?
Package: 17-SMD, Gull Wing
Stock4,944
Standard
100V
90A
8.5 mOhm @ 80A, 10V
4.5V @ 250µA
90nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
17-SMD, Gull Wing
ISOPLUS-DIL?
FDMC8010DC
Fairchild/ON Semiconductor

N-CHANNEL POWERTRENCH MOSFET POW

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7080pF @ 15V
  • Power - Max: 50W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: -
Package: 8-PowerWDFN
Stock5,264
Standard
30V
-
-
3V @ 250µA
94nC @ 10V
7080pF @ 15V
50W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
-
hot AO8810
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 7A 8-TSSOP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
Package: 8-TSSOP (0.173", 4.40mm Width)
Stock13,121,976
Logic Level Gate
20V
7A
20 mOhm @ 7A, 4.5V
1.1V @ 250µA
14nC @ 4.5V
1295pF @ 10V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
FPF1C2P5BF07A
Fairchild/ON Semiconductor

MOSFET 5N-CH 650V 36A F1 MODULE

  • FET Type: 5 N-Channel (Solar Inverter)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 36A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 27A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: F1 Module
  • Supplier Device Package: F1
Package: F1 Module
Stock6,888
Standard
650V
36A
90 mOhm @ 27A, 10V
3.8V @ 250µA
-
-
250W
-40°C ~ 150°C (TJ)
Chassis Mount
F1 Module
F1
US6K4TR
Rohm Semiconductor

MOSFET 2N-CH 20V 1.5A TUMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: TUMT6
Package: 6-SMD, Flat Leads
Stock4,064
Logic Level Gate
20V
1.5A
180 mOhm @ 1.5A, 4.5V
1V @ 1mA
2.5nC @ 4.5V
110pF @ 10V
1W
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
TUMT6
TT8M3TR
Rohm Semiconductor

MOSFET N/P-CH 20V 2.5A TSST8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A, 2.4A
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-TSST
Package: 8-SMD, Flat Lead
Stock3,424
Logic Level Gate, 1.5V Drive
20V
2.5A, 2.4A
72 mOhm @ 2.5A, 4.5V
1V @ 1mA
3.6nC @ 4.5V
260pF @ 10V
1W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-TSST
BSD840NH6327XTSA1
Infineon Technologies

MOSFET 2N-CH 20V 0.88A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 880mA
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 880mA, 2.5V
  • Vgs(th) (Max) @ Id: 750mV @ 1.6µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.26nC @ 2.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
Package: 6-VSSOP, SC-88, SOT-363
Stock657,162
Logic Level Gate
20V
880mA
400 mOhm @ 880mA, 2.5V
750mV @ 1.6µA
0.26nC @ 2.5V
78pF @ 10V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
hot SI5902BDC-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 4A 1206-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
  • Power - Max: 3.12W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
Package: 8-SMD, Flat Lead
Stock324,012
Logic Level Gate
30V
4A
65 mOhm @ 3.1A, 10V
3V @ 250µA
7nC @ 10V
220pF @ 15V
3.12W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
DMT3009UDT-7
Diodes Incorporated

MOSFET 2N-CH 30V 10.6A 8VDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 894pF @ 15V
  • Power - Max: 1.1W (Ta), 16W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: V-DFN3030-8 (Type KS)
Package: -
Request a Quote
-
30V
10.6A (Ta), 30A (Tc)
11.1mOhm @ 11A, 10V
1.8V @ 250µA
14.6nC @ 10V
894pF @ 15V
1.1W (Ta), 16W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
V-DFN3030-8 (Type KS)
MCACD60N06YHE3-TP
Micro Commercial Co

N-CHANNEL MOSFET,PDFN5060-8D

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 30V
  • Power - Max: 50W (Tj)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: PDFN5060-8D
Package: -
Request a Quote
-
60V
60A (Tc)
6.5mOhm @ 20A, 10V
2.5V @ 250µA
34.5nC @ 10V
1740pF @ 30V
50W (Tj)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerLDFN
PDFN5060-8D
AOCA32317
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 17A 10DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
  • Rds On (Max) @ Id, Vgs: 7.3mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 3.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-SMD, No Lead
  • Supplier Device Package: 10-AlphaDFN (3.37x1.47)
Package: -
Request a Quote
-
30V
17A (Ta)
7.3mOhm @ 5A, 10V
2V @ 250µA
70nC @ 10V
-
3.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
10-SMD, No Lead
10-AlphaDFN (3.37x1.47)
MSCSM120TLM50C3AG
Microchip Technology

SIC 4N-CH 1200V 55A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.7V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
  • Power - Max: 245W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
Package: -
Stock18
-
1200V (1.2kV)
55A (Tc)
50mOhm @ 40A, 20V
2.7V @ 1mA
137nC @ 20V
1990pF @ 1000V
245W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
SIZ980BDT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 23.7A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V
  • Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (6x5)
Package: -
Stock40,779
-
30V
23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
2.2V @ 250µA
18nC @ 10V, 79nC @ 10V
790pF @ 15V, 3655pF @ 15V
3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (6x5)
CAB425M12XM3
Wolfspeed, Inc.

SIC 2N-CH 1200V 450A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 450A
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 115mA
  • Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
Package: -
Stock9
-
1200V (1.2kV)
450A
4.2mOhm @ 425A, 15V
3.6V @ 115mA
1135nC @ 15V
30.7nF @ 800V
-
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
DMP68D1LV-13
Diodes Incorporated

BSS FAMILY SOT563 T&R 10K

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 238mA (Ta)
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 30V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
Package: -
Request a Quote
-
60V
238mA (Ta)
8Ohm @ 100mA, 5V
2.1V @ 250µA
0.6nC @ 5V
42pF @ 30V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
SI6562DQ-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V 8-TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
Package: -
Request a Quote
Logic Level Gate
20V
-
30mOhm @ 4.5A, 4.5V
600mV @ 250µA (Min)
25nC @ 4.5V
-
1W
-
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
QH8KC5TCR
Rohm Semiconductor

MOSFET 2N-CH 60V 3A TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
Package: -
Stock3,471
-
60V
3A (Ta)
90mOhm @ 3A, 10V
2.5V @ 1mA
3.1nC @ 10V
135pF @ 30V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
CMXDM7002A-TR-PBFREE
Central Semiconductor Corp

MOSFET 2N-CH 60V 0.28A SOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 280mA
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.59nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
Package: -
Request a Quote
-
60V
280mA
2Ohm @ 500mA, 10V
2.5V @ 250µA
0.59nC @ 4.5V
50pF @ 25V
350mW
-65°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
BUK9MJJ-65PLL-518
Nexperia USA Inc.

MOSFET 2N-CH 65V 11.6A 20SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 65V
  • Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
  • Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 30.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 25V
  • Power - Max: 4.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SO
Package: -
Request a Quote
Logic Level Gate
65V
11.6A (Tc)
15.5mOhm @ 10A, 10V
2V @ 1mA
30.8nC @ 5V
2660pF @ 25V
4.4W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
20-SOIC (0.295", 7.50mm Width)
20-SO