Page 40 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AO4801L	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 5A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,592	Standard	30V	5A (Ta)	48 mOhm @ 5A, 10V	1.3V @ 250µA	9nC @ 4.5V	780pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI6983DQ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 4.6A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock2,112	Logic Level Gate	20V	4.6A	24 mOhm @ 5.4A, 4.5V	1V @ 400µA	30nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI1970DH-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 1.3A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 15V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	Package: 6-TSSOP, SC-88, SOT-363	Stock7,920	Logic Level Gate	30V	1.3A	225 mOhm @ 1.2A, 4.5V	1.6V @ 250µA	3.8nC @ 10V	95pF @ 15V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
SI1905BDH-T1-E3	Vishay Siliconix	MOSFET 2P-CH 8V 0.63A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 630mA Rds On (Max) @ Id, Vgs: 542 mOhm @ 580mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 4V Power - Max: 357mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	Package: 6-TSSOP, SC-88, SOT-363	Stock518,040	Logic Level Gate	8V	630mA	542 mOhm @ 580mA, 4.5V	1V @ 250µA	1.5nC @ 4.5V	62pF @ 4V	357mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
SI5517DU-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 6A CHIPFET FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 8.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? ChipFET? Dual Supplier Device Package: PowerPAK? ChipFet Dual	Package: PowerPAK? ChipFET? Dual	Stock7,888	Logic Level Gate	20V	6A	39 mOhm @ 4.4A, 4.5V	1V @ 250µA	16nC @ 8V	520pF @ 10V	8.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFET? Dual	PowerPAK? ChipFet Dual
SI3586DV-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 2.9A 6TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	Package: SOT-23-6 Thin, TSOT-23-6	Stock544,848	Logic Level Gate	20V	2.9A, 2.1A	60 mOhm @ 3.4A, 4.5V	1.1V @ 250µA	6nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SI1563DH-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 1.13A SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 570mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	Package: 6-TSSOP, SC-88, SOT-363	Stock259,200	Logic Level Gate	20V	1.13A, 880mA	280 mOhm @ 1.13A, 4.5V	1V @ 100µA	2nC @ 4.5V	-	570mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
VMM90-09F	IXYS	MOSFET 2N-CH 900V 85A Y3-LI FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 85A Rds On (Max) @ Id, Vgs: 76 mOhm @ 65A, 10V Vgs(th) (Max) @ Id: 5V @ 30mA Gate Charge (Qg) (Max) @ Vgs: 960nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Y3-Li Supplier Device Package: Y3-Li	Package: Y3-Li	Stock3,792	Standard	900V	85A	76 mOhm @ 65A, 10V	5V @ 30mA	960nC @ 10V	-	-	-40°C ~ 150°C (TJ)	Chassis Mount	Y3-Li	Y3-Li
APTM100H35FT3G	Microsemi Corporation	MOSFET 4N-CH 1000V 22A SP3 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 22A Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	Package: SP3	Stock6,416	Standard	1000V (1kV)	22A	420 mOhm @ 11A, 10V	5V @ 2.5mA	186nC @ 10V	5200pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
GWM180-004X2-SLSAM	IXYS	MOSFET 6N-CH 40V 180A 17-SMD FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Flat Leads Supplier Device Package: ISOPLUS-DIL?	Package: 17-SMD, Flat Leads	Stock4,688	Standard	40V	180A	2.5 mOhm @ 100A, 10V	4.5V @ 1mA	110nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Flat Leads	ISOPLUS-DIL?
NTMFD4C20NT3G	ON Semiconductor	MOSFET 2N-CH 30V SO8FL FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V Power - Max: 1.09W, 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	Package: 8-PowerTDFN	Stock5,168	Standard	30V	9.1A, 13.7A	7.3 mOhm @ 10A, 10V	2.1V @ 250µA	9.3nC @ 4.5V	970pF @ 15V	1.09W, 1.15W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
CSD85302L	Texas Instruments	MOSFET 2N-CH 20V 5A FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFLGA Supplier Device Package: 4-Picostar (1.31x1.31)	Package: 4-XFLGA	Stock3,376	Standard	-	-	-	-	7.8nC @ 4.5V	-	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	4-XFLGA	4-Picostar (1.31x1.31)
DMC2038LVTQ-7	Diodes Incorporated	MOSFET BVDSS: 8V 24V TSOT26 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 2.6A (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V, 74 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, 705pF @ 10V Power - Max: 800mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	Package: SOT-23-6 Thin, TSOT-23-6	Stock4,976	Standard	20V	3.7A (Ta), 2.6A (Ta)	35 mOhm @ 4A, 4.5V, 74 mOhm @ 3A, 4.5V	1V @ 250µA	5.7nC @ 4.5V, 10nC @ 4.5V	530pF @ 10V, 705pF @ 10V	800mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
STL20DNF06LAG	STMicroelectronics	MOSFET 2NCH 60V 20A POWERFLAT FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Power - Max: 75W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	Package: 8-PowerVDFN	Stock3,216	Logic Level Gate	60V	20A	40 mOhm @ 4A, 10V	2.5V @ 250µA	22.5nC @ 10V	670pF @ 25V	75W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
ALD110908ASAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V Vgs(th) (Max) @ Id: 810mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,880	Standard	10.6V	12mA, 3mA	500 Ohm @ 4.8V	810mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMN2014LHAB-7	Diodes Incorporated	MOSFET 2N-CH 20V 9A 6-UDFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 13 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN2030-6 (Type B)	Package: 6-UFDFN Exposed Pad	Stock3,296	Logic Level Gate	20V	9A	13 mOhm @ 4A, 4.5V	1.1V @ 250µA	16nC @ 4.5V	1550pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	U-DFN2030-6 (Type B)
NTJD5121NT1G	ON Semiconductor	MOSFET 2N-CH 60V 0.295A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 295mA Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock2,930,520	Logic Level Gate	60V	295mA	1.6 Ohm @ 500mA, 10V	2.5V @ 250µA	0.9nC @ 4.5V	26pF @ 20V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
SMA5133	Sanken	MOSFET 3N/3P-CH 500V 2.5A 12-SIP FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: 12-SIP, Exposed Tab Supplier Device Package: 12-SIP	Package: 12-SIP, Exposed Tab	Stock41,772	Standard	500V	2.5A	-	-	-	-	-	-	Through Hole	12-SIP, Exposed Tab	12-SIP
AUIRF7341QTR	Infineon Technologies	MOSFET 2N-CH 55V 5.1A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.1A Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,768	Logic Level Gate	55V	5.1A	50 mOhm @ 5.1A, 10V	3V @ 250µA	44nC @ 10V	780pF @ 25V	2.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BUK7K25-40E,115	Nexperia USA Inc.	MOSFET 2N-CH 40V 27A LFPAK56D FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 27A Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 25V Power - Max: 32W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Package: SOT-1205, 8-LFPAK56	Stock6,016	Standard	40V	27A	25 mOhm @ 5A, 10V	4V @ 1mA	7.9nC @ 10V	525pF @ 25V	32W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
STL40DN3LLH5	STMicroelectronics	MOSFET 2N-CH 30V 40A POWERFLAT56 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 18 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V Power - Max: 60W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	Package: 8-PowerVDFN	Stock6,848	Standard	30V	40A	18 mOhm @ 5.5A, 10V	1.5V @ 250µA	4.5nC @ 4.5V	475pF @ 25V	60W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
SQJ570EP-T1_GE3	Vishay Siliconix	MOSFET ARRAY N/P-CH 100V SO8 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 9.5A (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V, 146 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 600pF @ 25V Power - Max: 27W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	Package: PowerPAK? SO-8 Dual	Stock6,976	Standard	100V	15A (Tc), 9.5A (Tc)	45 mOhm @ 6A, 10V, 146 mOhm @ 6A, 10V	2.5V @ 250µA	20nC @ 10V, 15nC @ 10V	650pF @ 25V, 600pF @ 25V	27W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
ZDM4306NTA	Diodes Incorporated	MOSFET 2N-CH 60V 2A SOT-223-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Power - Max: 3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SM8	Package: SOT-223-8	Stock19,950	Standard	60V	2A	330 mOhm @ 3A, 10V	3V @ 1mA	-	350pF @ 25V	3W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SM8
SP8K3TB	Rohm Semiconductor	MOSFET 2N-CH 30V 7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,031,220	Logic Level Gate	30V	7A	24 mOhm @ 7A, 10V	2.5V @ 1mA	11.8nC @ 5V	600pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMP210DUDJ-7	Diodes Incorporated	MOSFET 2P-CH 20V 0.2A SOT-963 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1.15V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 27.44pF @ 15V Power - Max: 330mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	Package: SOT-963	Stock44,640	Logic Level Gate	20V	200mA	5.5 Ohm @ 100mA, 4.5V	1.15V @ 250µA	-	27.44pF @ 15V	330mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
DMN2029USD-13	Diodes Incorporated	MOSFET 2N-CH 20V 5.8A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 10V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,496	Logic Level Gate	20V	5.8A	25 mOhm @ 6.5A, 4.5V	1.5V @ 250µA	18.6nC @ 8V	1171pF @ 10V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
CMLDM7003TG TR	Central Semiconductor Corp	MOSFET 2N-CH 50V 0.28A SOT563 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: SOT-563, SOT-666	Stock29,922	Standard	50V	280mA	1.5 Ohm @ 50mA, 5V	1.2V @ 250µA	0.76nC @ 4.5V	50pF @ 25V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
SI1553CDL-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA Rds On (Max) @ Id, Vgs: 390 mOhm @ 700mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V Power - Max: 340mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	Package: 6-TSSOP, SC-88, SOT-363	Stock855,912	Logic Level Gate	20V	700mA, 500mA	390 mOhm @ 700mA, 4.5V	1.5V @ 250µA	1.8nC @ 10V	38pF @ 10V	340mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
DMN65D8LDW-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.18A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180mA Rds On (Max) @ Id, Vgs: 6 Ohm @ 115mA, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock177,240	Logic Level Gate	60V	180mA	6 Ohm @ 115mA, 10V	2V @ 250µA	0.87nC @ 10V	22pF @ 25V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
EM6K34T2CR	Rohm Semiconductor	MOSFET 2N-CH 50V 0.2A EMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 0.9V Drive Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 800mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V Power - Max: 120mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	Package: SOT-563, SOT-666	Stock260,514	Logic Level Gate, 0.9V Drive	50V	200mA	2.2 Ohm @ 200mA, 4.5V	800mV @ 1mA	-	26pF @ 10V	120mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6

AO4801L

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 5A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,592

Standard

30V

5A (Ta)

48 mOhm @ 5A, 10V

1.3V @ 250µA

9nC @ 4.5V

780pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI6983DQ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 4.6A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock2,112

Logic Level Gate

20V

4.6A

24 mOhm @ 5.4A, 4.5V

1V @ 400µA

30nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI1970DH-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 1.3A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 15V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

Package: 6-TSSOP, SC-88, SOT-363

Stock7,920

Logic Level Gate

30V

1.3A

225 mOhm @ 1.2A, 4.5V

1.6V @ 250µA

3.8nC @ 10V

95pF @ 15V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

SI1905BDH-T1-E3

Vishay Siliconix

MOSFET 2P-CH 8V 0.63A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 630mA
Rds On (Max) @ Id, Vgs: 542 mOhm @ 580mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 4V
Power - Max: 357mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

Package: 6-TSSOP, SC-88, SOT-363

Stock518,040

Logic Level Gate

8V

630mA

542 mOhm @ 580mA, 4.5V

1V @ 250µA

1.5nC @ 4.5V

62pF @ 4V

357mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

SI5517DU-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 6A CHIPFET

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Power - Max: 8.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? ChipFET? Dual
Supplier Device Package: PowerPAK? ChipFet Dual

Package: PowerPAK? ChipFET? Dual

Stock7,888

Logic Level Gate

20V

6A

39 mOhm @ 4.4A, 4.5V

1V @ 250µA

16nC @ 8V

520pF @ 10V

8.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? ChipFET? Dual

PowerPAK? ChipFet Dual

SI3586DV-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 2.9A 6TSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock544,848

Logic Level Gate

20V

2.9A, 2.1A

60 mOhm @ 3.4A, 4.5V

1.1V @ 250µA

6nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

SI1563DH-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 1.13A SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 570mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

Package: 6-TSSOP, SC-88, SOT-363

Stock259,200

Logic Level Gate

20V

1.13A, 880mA

280 mOhm @ 1.13A, 4.5V

1V @ 100µA

2nC @ 4.5V

-

570mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

VMM90-09F

IXYS

MOSFET 2N-CH 900V 85A Y3-LI

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 85A
Rds On (Max) @ Id, Vgs: 76 mOhm @ 65A, 10V
Vgs(th) (Max) @ Id: 5V @ 30mA
Gate Charge (Qg) (Max) @ Vgs: 960nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y3-Li
Supplier Device Package: Y3-Li

Package: Y3-Li

Stock3,792

Standard

900V

85A

76 mOhm @ 65A, 10V

5V @ 30mA

960nC @ 10V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Y3-Li

APTM100H35FT3G

Microsemi Corporation

MOSFET 4N-CH 1000V 22A SP3

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

Package: SP3

Stock6,416

Standard

1000V (1kV)

22A

420 mOhm @ 11A, 10V

5V @ 2.5mA

186nC @ 10V

5200pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

GWM180-004X2-SLSAM

IXYS

MOSFET 6N-CH 40V 180A 17-SMD

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Flat Leads
Supplier Device Package: ISOPLUS-DIL?

Package: 17-SMD, Flat Leads

Stock4,688

Standard

40V

180A

2.5 mOhm @ 100A, 10V

4.5V @ 1mA

110nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

17-SMD, Flat Leads

ISOPLUS-DIL?

NTMFD4C20NT3G

ON Semiconductor

MOSFET 2N-CH 30V SO8FL

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A
Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V
Power - Max: 1.09W, 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

Package: 8-PowerTDFN

Stock5,168

Standard

30V

9.1A, 13.7A

7.3 mOhm @ 10A, 10V

2.1V @ 250µA

9.3nC @ 4.5V

970pF @ 15V

1.09W, 1.15W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

CSD85302L

Texas Instruments

MOSFET 2N-CH 20V 5A

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFLGA
Supplier Device Package: 4-Picostar (1.31x1.31)

Package: 4-XFLGA

Stock3,376

Standard

-

7.8nC @ 4.5V

-

1.7W

-55°C ~ 150°C (TJ)

Surface Mount

4-XFLGA

4-Picostar (1.31x1.31)

DMC2038LVTQ-7

Diodes Incorporated

MOSFET BVDSS: 8V 24V TSOT26

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V, 74 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, 705pF @ 10V
Power - Max: 800mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

Package: SOT-23-6 Thin, TSOT-23-6

Stock4,976

Standard

20V

3.7A (Ta), 2.6A (Ta)

35 mOhm @ 4A, 4.5V, 74 mOhm @ 3A, 4.5V

1V @ 250µA

5.7nC @ 4.5V, 10nC @ 4.5V

530pF @ 10V, 705pF @ 10V

800mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

STL20DNF06LAG

STMicroelectronics

MOSFET 2NCH 60V 20A POWERFLAT

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Power - Max: 75W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)

Package: 8-PowerVDFN

Stock3,216

Logic Level Gate

60V

20A

40 mOhm @ 4A, 10V

2.5V @ 250µA

22.5nC @ 10V

670pF @ 25V

75W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

ALD110908ASAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,880

Standard

10.6V

12mA, 3mA

500 Ohm @ 4.8V

810mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMN2014LHAB-7

Diodes Incorporated

MOSFET 2N-CH 20V 9A 6-UDFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 13 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: U-DFN2030-6 (Type B)

Package: 6-UFDFN Exposed Pad

Stock3,296

Logic Level Gate

20V

9A

13 mOhm @ 4A, 4.5V

1.1V @ 250µA

16nC @ 4.5V

1550pF @ 10V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

U-DFN2030-6 (Type B)

NTJD5121NT1G

ON Semiconductor

MOSFET 2N-CH 60V 0.295A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

Package: 6-TSSOP, SC-88, SOT-363

Stock2,930,520

Logic Level Gate

60V

295mA

1.6 Ohm @ 500mA, 10V

2.5V @ 250µA

0.9nC @ 4.5V

26pF @ 20V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

SMA5133

Sanken

MOSFET 3N/3P-CH 500V 2.5A 12-SIP

FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: 12-SIP, Exposed Tab
Supplier Device Package: 12-SIP

Package: 12-SIP, Exposed Tab

Stock41,772

Standard

500V

2.5A

-

Through Hole

12-SIP, Exposed Tab

12-SIP

AUIRF7341QTR

Infineon Technologies

MOSFET 2N-CH 55V 5.1A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
Power - Max: 2.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,768

Logic Level Gate

55V

5.1A

50 mOhm @ 5.1A, 10V

3V @ 250µA

44nC @ 10V

780pF @ 25V

2.4W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BUK7K25-40E,115

Nexperia USA Inc.

MOSFET 2N-CH 40V 27A LFPAK56D

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 27A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 25V
Power - Max: 32W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

Package: SOT-1205, 8-LFPAK56

Stock6,016

Standard

40V

27A

25 mOhm @ 5A, 10V

4V @ 1mA

7.9nC @ 10V

525pF @ 25V

32W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

STL40DN3LLH5

STMicroelectronics

MOSFET 2N-CH 30V 40A POWERFLAT56

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Power - Max: 60W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)

Package: 8-PowerVDFN

Stock6,848

Standard

30V

40A

18 mOhm @ 5.5A, 10V

1.5V @ 250µA

4.5nC @ 4.5V

475pF @ 25V

60W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

SQJ570EP-T1_GE3

Vishay Siliconix

MOSFET ARRAY N/P-CH 100V SO8

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V, 146 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 600pF @ 25V
Power - Max: 27W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

Package: PowerPAK? SO-8 Dual

Stock6,976

Standard

100V

15A (Tc), 9.5A (Tc)

45 mOhm @ 6A, 10V, 146 mOhm @ 6A, 10V

2.5V @ 250µA

20nC @ 10V, 15nC @ 10V

650pF @ 25V, 600pF @ 25V

27W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

ZDM4306NTA

Diodes Incorporated

MOSFET 2N-CH 60V 2A SOT-223-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Power - Max: 3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8

Package: SOT-223-8

Stock19,950

Standard

60V

2A

330 mOhm @ 3A, 10V

3V @ 1mA

-

350pF @ 25V

3W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223-8

SM8

SP8K3TB

Rohm Semiconductor

MOSFET 2N-CH 30V 7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,031,220

Logic Level Gate

30V

7A

24 mOhm @ 7A, 10V

2.5V @ 1mA

11.8nC @ 5V

600pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMP210DUDJ-7

Diodes Incorporated

MOSFET 2P-CH 20V 0.2A SOT-963

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 27.44pF @ 15V
Power - Max: 330mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

Package: SOT-963

Stock44,640

Logic Level Gate

20V

200mA

5.5 Ohm @ 100mA, 4.5V

1.15V @ 250µA

-

27.44pF @ 15V

330mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

DMN2029USD-13

Diodes Incorporated

MOSFET 2N-CH 20V 5.8A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 10V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,496

Logic Level Gate

20V

5.8A

25 mOhm @ 6.5A, 4.5V

1.5V @ 250µA

18.6nC @ 8V

1171pF @ 10V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

CMLDM7003TG TR

Central Semiconductor Corp

MOSFET 2N-CH 50V 0.28A SOT563

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.76nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

Package: SOT-563, SOT-666

Stock29,922

Standard

50V

280mA

1.5 Ohm @ 50mA, 5V

1.2V @ 250µA

0.76nC @ 4.5V

50pF @ 25V

350mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

SI1553CDL-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Rds On (Max) @ Id, Vgs: 390 mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
Power - Max: 340mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

Package: 6-TSSOP, SC-88, SOT-363

Stock855,912

Logic Level Gate

20V

700mA, 500mA

390 mOhm @ 700mA, 4.5V

1.5V @ 250µA

1.8nC @ 10V

38pF @ 10V

340mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

DMN65D8LDW-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.18A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 180mA
Rds On (Max) @ Id, Vgs: 6 Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

Package: 6-TSSOP, SC-88, SOT-363

Stock177,240

Logic Level Gate

60V

180mA

6 Ohm @ 115mA, 10V

2V @ 250µA

0.87nC @ 10V

22pF @ 25V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

EM6K34T2CR

Rohm Semiconductor

MOSFET 2N-CH 50V 0.2A EMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 0.9V Drive
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
Power - Max: 120mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

Package: SOT-563, SOT-666

Stock260,514

Logic Level Gate, 0.9V Drive

50V

200mA

2.2 Ohm @ 200mA, 4.5V

800mV @ 1mA

-

26pF @ 10V

120mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

EMT6