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Transistors - IGBTs - Single

Records 4,424
Page  13/148
Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG8CH15K10D
Infineon Technologies

IGBT 1200V ULTRA FAST DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Package: -
Stock4,864
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXGC16N60C2D1
IXYS

IGBT 600V 20A 63W ISOPLUS220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
  • Power - Max: 63W
  • Switching Energy: 60µJ (off)
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 25ns/60ns
  • Test Condition: 400V, 12A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS220?
  • Supplier Device Package: ISOPLUS220?
Package: ISOPLUS220?
Stock3,104
600V
20A
100A
3V @ 15V, 12A
63W
60µJ (off)
Standard
32nC
25ns/60ns
400V, 12A, 22 Ohm, 15V
30ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS220?
ISOPLUS220?
FGL60N100DTU
Fairchild/ON Semiconductor

IGBT 1000V 60A 176W TO264

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
  • Power - Max: 176W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 230nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.5µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
Package: TO-264-3, TO-264AA
Stock7,616
1000V
60A
120A
2.9V @ 15V, 60A
176W
-
Standard
230nC
-
-
1.5µs
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
HGTP12N60C3
Fairchild/ON Semiconductor

IGBT 600V 24A 104W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 12A
  • Power - Max: 104W
  • Switching Energy: 380µJ (on), 900µJ (off)
  • Input Type: Standard
  • Gate Charge: 48nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
Package: TO-220-3
Stock2,016
600V
24A
96A
2V @ 15V, 12A
104W
380µJ (on), 900µJ (off)
Standard
48nC
-
-
-
-40°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot SGW10N60RUFDTM
Fairchild/ON Semiconductor

IGBT 600V 16A 75W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
  • Power - Max: 75W
  • Switching Energy: 141µJ (on), 215µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 15ns/36ns
  • Test Condition: 300V, 10A, 20 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock12,180
600V
16A
30A
2.8V @ 15V, 10A
75W
141µJ (on), 215µJ (off)
Standard
30nC
15ns/36ns
300V, 10A, 20 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot SGS10N60RUFTU
Fairchild/ON Semiconductor

IGBT 600V 16A 55W TO220F

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
  • Power - Max: 55W
  • Switching Energy: 141µJ (on), 215µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 15ns/36ns
  • Test Condition: 300V, 10A, 20 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
Package: TO-220-3 Full Pack
Stock2,000
600V
16A
30A
2.8V @ 15V, 10A
55W
141µJ (on), 215µJ (off)
Standard
30nC
15ns/36ns
300V, 10A, 20 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
IRGS4062DTRLPBF
Infineon Technologies

IGBT DISCRETES

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock5,968
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG4BC30KPBF
Infineon Technologies

IGBT 600V 28A 100W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 58A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
  • Power - Max: 100W
  • Switching Energy: 360µJ (on), 510µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 26ns/130ns
  • Test Condition: 480V, 16A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
Package: TO-220-3
Stock7,872
600V
28A
58A
2.7V @ 15V, 16A
100W
360µJ (on), 510µJ (off)
Standard
67nC
26ns/130ns
480V, 16A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRG4RC10UDPBF
Infineon Technologies

IGBT 600V 8.5A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.5A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 140µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 40ns/87ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock7,616
600V
8.5A
34A
2.6V @ 15V, 5A
38W
140µJ (on), 120µJ (off)
Standard
15nC
40ns/87ns
480V, 5A, 100 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IXXK300N60C3
IXYS

IGBT 600V 510A 2300W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 510A
  • Current - Collector Pulsed (Icm): 1075A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Power - Max: 2300W
  • Switching Energy: 3.35mJ (on), 1.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 438nC
  • Td (on/off) @ 25°C: 50ns/160ns
  • Test Condition: 400V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXXK)
Package: TO-264-3, TO-264AA
Stock7,680
600V
510A
1075A
2V @ 15V, 100A
2300W
3.35mJ (on), 1.9mJ (off)
Standard
438nC
50ns/160ns
400V, 100A, 1 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXXK)
APT30GT60BRG
Microsemi Corporation

IGBT 600V 64A 250W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 64A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 525µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 145nC
  • Td (on/off) @ 25°C: 12ns/225ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
Package: TO-247-3
Stock5,872
600V
64A
110A
2.5V @ 15V, 30A
250W
525µJ (on), 600µJ (off)
Standard
145nC
12ns/225ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
IXGK28N140B3H1
IXYS

IGBT 1400V 60A 300W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1400V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 28A
  • Power - Max: 300W
  • Switching Energy: 3.6mJ (on), 3.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 88nC
  • Td (on/off) @ 25°C: 16ns/190ns
  • Test Condition: 960V, 28A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 350ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
Package: TO-264-3, TO-264AA
Stock2,032
1400V
60A
150A
3.6V @ 15V, 28A
300W
3.6mJ (on), 3.9mJ (off)
Standard
88nC
16ns/190ns
960V, 28A, 5 Ohm, 15V
350ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
IXYP20N65C3D1M
IXYS

IGBT 650V 18A 50W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 18A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 50W
  • Switching Energy: 430µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 19ns/80ns
  • Test Condition: 400V, 20A, 20 Ohm, 15V
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
Package: TO-220-3
Stock7,984
650V
18A
105A
2.5V @ 15V, 20A
50W
430µJ (on), 350µJ (off)
Standard
30nC
19ns/80ns
400V, 20A, 20 Ohm, 15V
30ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
IKA15N65H5XKSA1
Infineon Technologies

IGBT 650V 14A 33.3W PG-TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 33.3W
  • Switching Energy: 120µJ (on), 50µJ (off)
  • Input Type: Standard
  • Gate Charge: 38nC
  • Td (on/off) @ 25°C: 17ns/160ns
  • Test Condition: 400V, 7.5A, 39 Ohm, 15V
  • Reverse Recovery Time (trr): 48ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
Package: TO-220-3
Stock8,772
650V
14A
45A
2.1V @ 15V, 15A
33.3W
120µJ (on), 50µJ (off)
Standard
38nC
17ns/160ns
400V, 7.5A, 39 Ohm, 15V
48ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot STGWT40H65FB
STMicroelectronics

IGBT 650V 80A 283W TO3P-3L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 283W
  • Switching Energy: 498mJ (on), 363mJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 40ns/142ns
  • Test Condition: 400V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
Package: TO-3P-3, SC-65-3
Stock87,756
650V
80A
160A
2.3V @ 15V, 40A
283W
498mJ (on), 363mJ (off)
Standard
210nC
40ns/142ns
400V, 40A, 5 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
hot IKW50N60TA
Infineon Technologies

IGBT 600V 80A 333W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 333W
  • Switching Energy: 2.6mJ
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 26ns/299ns
  • Test Condition: 400V, 50A, 7 Ohm, 15V
  • Reverse Recovery Time (trr): 143ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
Package: TO-247-3
Stock103,464
600V
80A
150A
2V @ 15V, 50A
333W
2.6mJ
Standard
310nC
26ns/299ns
400V, 50A, 7 Ohm, 15V
143ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
AOK60B65H2AL
Alpha & Omega Semiconductor Inc.

IGBT 60A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 120 A
  • Current - Collector Pulsed (Icm): 180 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
  • Power - Max: 416 W
  • Switching Energy: 2.36mJ (on), 1.17mJ (off)
  • Input Type: Standard
  • Gate Charge: 84 nC
  • Td (on/off) @ 25°C: 35ns/168ns
  • Test Condition: 400V, 60A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 318 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
Package: -
Request a Quote
650 V
120 A
180 A
2.5V @ 15V, 60A
416 W
2.36mJ (on), 1.17mJ (off)
Standard
84 nC
35ns/168ns
400V, 60A, 5Ohm, 15V
318 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
FGD1240G2
onsemi

IGBT 600V DPAK-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
Package: -
Stock7,500
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK-3
HGTH12N50CID
Harris Corporation

12A, 500V, N CHANNEL IGBT WITH A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RGSX5TS65DHRC11
Rohm Semiconductor

IGBT TRENCH FLD 650V 114A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 114 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
  • Power - Max: 404 W
  • Switching Energy: 3.32mJ (on), 1.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 79 nC
  • Td (on/off) @ 25°C: 43ns/113ns
  • Test Condition: 400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 114 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
Package: -
Stock1,350
650 V
114 A
225 A
2.15V @ 15V, 75A
404 W
3.32mJ (on), 1.9mJ (off)
Standard
79 nC
43ns/113ns
400V, 75A, 10Ohm, 15V
114 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RJP30L4DPE-00-J3
Renesas Electronics Corporation

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
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SIGC54T60R3EX1SA3
Infineon Technologies

IGBT TRENCH FS 600V 100A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
Package: -
Request a Quote
600 V
100 A
300 A
1.85V @ 15V, 100A
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Standard
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-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
FGH40N60SMD-F085
onsemi

IGBT 600V 80A 349W TO-247-3

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 349 W
  • Switching Energy: 920µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 180 nC
  • Td (on/off) @ 25°C: 18ns/110ns
  • Test Condition: 400V, 40A, 6Ohm, 15V
  • Reverse Recovery Time (trr): 47 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
Package: -
Request a Quote
600 V
80 A
120 A
2.5V @ 15V, 40A
349 W
920µJ (on), 300µJ (off)
Standard
180 nC
18ns/110ns
400V, 40A, 6Ohm, 15V
47 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IKB30N65ES5ATMA1
Infineon Technologies

IGBT TRENCH FS 650V 62A TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 62 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
  • Power - Max: 188 W
  • Switching Energy: 560µJ (on), 320µJ (off)
  • Input Type: Standard
  • Gate Charge: 70 nC
  • Td (on/off) @ 25°C: 17ns/124ns
  • Test Condition: 400V, 30A, 13Ohm, 15V
  • Reverse Recovery Time (trr): 75 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
Package: -
Stock11,544
650 V
62 A
120 A
1.7V @ 15V, 30A
188 W
560µJ (on), 320µJ (off)
Standard
70 nC
17ns/124ns
400V, 30A, 13Ohm, 15V
75 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3
IQFH55N04NM6ATMA1
Infineon Technologies

TRENCH <= 40V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Package: -
Request a Quote
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IXYH40N120C4
IXYS

IGBT DISCRETE TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 120 A
  • Current - Collector Pulsed (Icm): 230 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
  • Power - Max: 680 W
  • Switching Energy: 5.55mJ (on), 1.55mJ (off)
  • Input Type: Standard
  • Gate Charge: 92 nC
  • Td (on/off) @ 25°C: 21ns/140ns
  • Test Condition: 960V, 32A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 55 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
Package: -
Request a Quote
1200 V
120 A
230 A
2.5V @ 15V, 32A
680 W
5.55mJ (on), 1.55mJ (off)
Standard
92 nC
21ns/140ns
960V, 32A, 5Ohm, 15V
55 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
IKFW75N60ETXKSA1
Infineon Technologies

IGBT TRENCH FS 600V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 178 W
  • Switching Energy: 2.7mJ (on), 2.35J (off)
  • Input Type: Standard
  • Gate Charge: 440 nC
  • Td (on/off) @ 25°C: 33ns/340ns
  • Test Condition: 400V, 75A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 107 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-AI
Package: -
Stock600
600 V
80 A
225 A
2V @ 15V, 75A
178 W
2.7mJ (on), 2.35J (off)
Standard
440 nC
33ns/340ns
400V, 75A, 5Ohm, 15V
107 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-AI
MIW60N65RA-BP
Micro Commercial Co

IGBT TRENCH FS 650V 120A TO247AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 120 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
  • Power - Max: 333 W
  • Switching Energy: 2.84mJ (on), 1.21mJ (off)
  • Input Type: Standard
  • Gate Charge: 240 nC
  • Td (on/off) @ 25°C: 18ns/163ns
  • Test Condition: 400V, 60A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 42 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AB
Package: -
Request a Quote
650 V
120 A
120 A
2.4V @ 15V, 60A
333 W
2.84mJ (on), 1.21mJ (off)
Standard
240 nC
18ns/163ns
400V, 60A, 10Ohm, 15V
42 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AB
SIGC25T60SNCX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 44ns/324ns
  • Test Condition: 400V, 30A, 11Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
Package: -
Request a Quote
600 V
30 A
90 A
2.5V @ 15V, 30A
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Standard
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44ns/324ns
400V, 30A, 11Ohm, 15V
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-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC11T60NCX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 20ns/110ns
  • Test Condition: 300V, 10A, 27Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
Package: -
Request a Quote
600 V
10 A
30 A
2.5V @ 15V, 10A
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Standard
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20ns/110ns
300V, 10A, 27Ohm, 15V
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-55°C ~ 150°C (TJ)
Surface Mount
Die
Die