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GeneSiC Semiconductor Products - Diodes - Bridge Rectifiers

Records 345
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Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BR81
GeneSiC Semiconductor

DIODE BRIDGE 100V 8A BR-8

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-8
  • Supplier Device Package: BR-8
Package: 4-Square, BR-8
Stock16,704
Standard
100V
8A
1.1V @ 4A
10µA @ 100V
-65°C ~ 125°C (TJ)
Through Hole
4-Square, BR-8
BR-8
BR62
GeneSiC Semiconductor

DIODE BRIDGE 200V 6A BR-6

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-6
  • Supplier Device Package: BR-6
Package: 4-Square, BR-6
Stock17,544
Standard
200V
6A
1V @ 3A
10µA @ 200V
-65°C ~ 125°C (TJ)
Through Hole
4-Square, BR-6
BR-6
KBU8M
GeneSiC Semiconductor

DIODE BRIDGE 1000V 8A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
Package: 4-SIP, KBU
Stock16,440
Standard
1000V
8A
1V @ 8A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
hot W01M
GeneSiC Semiconductor

DIODE BRIDGE 100V 1.5A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
Package: 4-Circular, WOM
Stock145,692
Standard
100V
1.5A
1V @ 1A
10µA @ 100V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
hot GBPC2510W
GeneSiC Semiconductor

DIODE BRIDGE 1000V 25A GBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
Package: 4-Square, GBPC-W
Stock3,456
Standard
1000V
25A
1.1V @ 12.5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
GBPC3504W
GeneSiC Semiconductor

DIODE BRIDGE 400V 35A GBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
Package: 4-Square, GBPC-W
Stock5,536
Standard
400V
35A
1.1V @ 17.5A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
GBPC3504T
GeneSiC Semiconductor

DIODE BRIDGE 400V 35A GBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC-T
  • Supplier Device Package: GBPC-T
Package: 4-Square, GBPC-T
Stock19,032
Standard
400V
35A
1.1V @ 12.5A
5µA @ 400V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC-T
GBPC-T
hot GBPC2508W
GeneSiC Semiconductor

DIODE BRIDGE 800V 25A GBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.2A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
Package: 4-Square, GBPC-W
Stock43,872
Standard
800V
25A
1.1V @ 1.2A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
GBPC3502T
GeneSiC Semiconductor

DIODE BRIDGE 200V 35A GBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC-T
  • Supplier Device Package: GBPC-T
Package: 4-Square, GBPC-T
Stock21,816
Standard
200V
35A
1.1V @ 12.5A
5µA @ 200V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC-T
GBPC-T
GBPC2508T
GeneSiC Semiconductor

DIODE BRIDGE 800V 25A GBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
Package: 4-Square, GBPC
Stock16,848
Standard
800V
25A
1.1V @ 12.5A
5µA @ 800V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
hot GBPC3508W
GeneSiC Semiconductor

DIODE BRIDGE 800V 35A GBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
Package: 4-Square, GBPC-W
Stock7,200
Standard
800V
35A
1.1V @ 17.5A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
hot GBPC3510W
GeneSiC Semiconductor

DIODE BRIDGE 1000V 35A GBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
Package: 4-Square, GBPC-W
Stock33,396
Standard
1000V
35A
1.1V @ 17.5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
hot GBPC2506W
GeneSiC Semiconductor

DIODE BRIDGE 600V 25A GBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
Package: 4-Square, GBPC-W
Stock4,736
Standard
600V
25A
1.1V @ 12.5A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
hot GBPC2504W
GeneSiC Semiconductor

DIODE BRIDGE 400V 25A GBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
Package: 4-Square, GBPC-W
Stock6,704
Standard
400V
25A
1.1V @ 12.5A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
GBPC2504T
GeneSiC Semiconductor

DIODE BRIDGE 400V 25A GBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
Package: 4-Square, GBPC
Stock20,916
Standard
400V
25A
1.1V @ 12.5A
5µA @ 400V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
GBPC2506T
GeneSiC Semiconductor

DIODE BRIDGE 600V 25A GBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
Package: 4-Square, GBPC
Stock22,092
Standard
600V
25A
1.1V @ 12.5A
5µA @ 600V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
hot GBPC2502W
GeneSiC Semiconductor

DIODE BRIDGE 200V 25A GBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
Package: 4-Square, GBPC-W
Stock6,224
Standard
200V
25A
1.1V @ 12.5A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
hot GBL02
GeneSiC Semiconductor

DIODE BRIDGE 200V 4 A- GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
Package: 4-SIP, GBL
Stock6,036
Standard
200V
4A
1.1V @ 4A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
hot KBU6D
GeneSiC Semiconductor

DIODE BRIDGE 200V 6A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
Package: 4-SIP, KBU
Stock4,896
Standard
200V
6A
1V @ 6A
10µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
W02M
GeneSiC Semiconductor

DIODE BRIDGE 200V 1.5A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
Package: 4-Circular, WOM
Stock24,120
Standard
200V
1.5A
1V @ 1A
10µA @ 200V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
GBJ6D
GeneSiC Semiconductor

200V 6A GBJ SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
Package: -
Request a Quote
Standard
200 V
6 A
1.05 V @ 3 A
5 µA @ 200 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBJ6B
GeneSiC Semiconductor

100V 6A GBJ SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
Package: -
Request a Quote
Standard
100 V
6 A
1.05 V @ 3 A
5 µA @ 100 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBJ6M
GeneSiC Semiconductor

1000V 6A GBJ SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
Package: -
Request a Quote
Standard
1 kV
6 A
1.05 V @ 3 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBJ6K
GeneSiC Semiconductor

800V 6A GBJ SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
Package: -
Request a Quote
Standard
800 V
6 A
1.05 V @ 3 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBJ6J
GeneSiC Semiconductor

600V 6A GBJ SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
Package: -
Request a Quote
Standard
600 V
6 A
1.05 V @ 3 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBJ6G
GeneSiC Semiconductor

400V 6A GBJ SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
Package: -
Request a Quote
Standard
400 V
6 A
1.05 V @ 3 A
5 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBJ35M
GeneSiC Semiconductor

1000V 35A GBJ SINGLE PHASE BRIDG

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
Package: -
Request a Quote
Standard
1 kV
35 A
1.1 V @ 17.5 A
10 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBJ35J
GeneSiC Semiconductor

600V 35A GBJ SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
Package: -
Request a Quote
Standard
600 V
35 A
1.1 V @ 17.5 A
10 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBJ35K
GeneSiC Semiconductor

800V 35A GBJ SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
Package: -
Request a Quote
Standard
800 V
35 A
1.1 V @ 17.5 A
10 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBJ35G
GeneSiC Semiconductor

400V 35A GBJ SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
Package: -
Request a Quote
Standard
400 V
35 A
1.1 V @ 17.5 A
10 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ