Global Power Technologies Group Products

GSID200A170S3B1

Global Power Technologies Group

SILICON IGBT MODULES

• IGBT Type: -
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 400A
• Power - Max: 1630W
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
• Current - Collector Cutoff (Max): 1mA
• Input Capacitance (Cies) @ Vce: 26nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: D-3 Module
• Supplier Device Package: D3

Package: D-3 Module

GSID080A120B1A5

Global Power Technologies Group

SILICON IGBT MODULES

• IGBT Type: -
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 160A
• Power - Max: 1710W
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
• Current - Collector Cutoff (Max): 1mA
• Input Capacitance (Cies) @ Vce: 7nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

Package: Module

GHIS080A120S-A1

Global Power Technologies Group

IGBT BOOST CHP 1200V 160A SOT227

• IGBT Type: Trench Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 160A
• Power - Max: 480W
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 80A
• Current - Collector Cutoff (Max): 2mA
• Input Capacitance (Cies) @ Vce: 10.3nF @ 30V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

Package: SOT-227-4, miniBLOC

GP2M010A065H

Global Power Technologies Group

MOSFET N-CH 650V 9.5A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 198W (Tc)
• Rds On (Max) @ Id, Vgs: 820 mOhm @ 4.75A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

Package: TO-220-3

GP2M005A060CG

Global Power Technologies Group

MOSFET N-CH 600V 4.2A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 658pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 98.4W (Tc)
• Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 2.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

GP2M005A050CG

Global Power Technologies Group

MOSFET N-CH 500V 4.5A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 98.4W (Tc)
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

GP1M018A020HG

Global Power Technologies Group

MOSFET N-CH 200V 18A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 94W (Tc)
• Rds On (Max) @ Id, Vgs: 170 mOhm @ 9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

Package: TO-220-3

GP1M003A080CH

Global Power Technologies Group

MOSFET N-CH 800V 3A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 696pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 94W (Tc)
• Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

GP2M008A060HG

Global Power Technologies Group

MOSFET N-CH 600V 7.5A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 120W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

Package: TO-220-3

GP2M008A060FG

Global Power Technologies Group

MOSFET N-CH 600V 7.5A TO220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 39W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

Package: TO-220-3 Full Pack

GP2M005A050FG

Global Power Technologies Group

MOSFET N-CH 500V 4.5A TO220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 32.9W (Tc)
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

Package: TO-220-3 Full Pack

GP1M011A050FSH

Global Power Technologies Group

MOSFET N-CH 500V 10A TO220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1546pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 51.4W (Tc)
• Rds On (Max) @ Id, Vgs: 700 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

Package: TO-220-3 Full Pack

GP1M009A070F

Global Power Technologies Group

MOSFET N-CH 700V 9A TO220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1944pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 52W (Tc)
• Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 4.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

Package: TO-220-3 Full Pack

GP1M003A050PG

Global Power Technologies Group

MOSFET N-CH 500V 2.5A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 52W (Tc)
• Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 1.25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Package: TO-251-3 Short Leads, IPak, TO-251AA

GCMS080A120B3C1

Global Power Technologies Group

SIC MOSFET 6-PACK MODULE B2_EASY

• Type: MOSFET
• Configuration: 3 Phase
• Current: 40A
• Voltage: 1200V
• Voltage - Isolation: 2500Vrms
• Package / Case: Power Module

Package: Power Module

GHIS075A120T2P2

Global Power Technologies Group

SI IGBT & SIC SBD HYBRID MODULES

• Type: IGBT
• Configuration: 3 Phase
• Current: 150A
• Voltage: 1200V
• Voltage - Isolation: 2500Vrms
• Package / Case: Power Module

Package: Power Module

GHIS050A060B3P2

Global Power Technologies Group

SI IGBT & SIC SBD HYBRID MODULES

• Type: IGBT
• Configuration: 3 Phase
• Current: 100A
• Voltage: 600V
• Voltage - Isolation: 2500Vrms
• Package / Case: Power Module

Package: Power Module

GDP60Z120E

Global Power Technologies Group

DIODE SCHOTT 1.2KV 60A TO247-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 60A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 60A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Capacitance @ Vr, F: 3581pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247-2
• Operating Temperature - Junction: -55°C ~ 135°C

Package: TO-247-2

GDP03S060C

Global Power Technologies Group

DIODE SCHOTTKY 600V 3A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Capacitance @ Vr, F: 122pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 135°C

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

GSXD300A170S2D5

Global Power Technologies Group

SILICON SCHOTTKY RECTIFIER MODUL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1700V
• Current - Average Rectified (Io): 300A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 540ns
• Current - Reverse Leakage @ Vr: 230A @ 900V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3)
• Supplier Device Package: ADD-A-PAK?
• Operating Temperature - Junction: -40°C ~ 150°C

Package: ADD-A-PAK (3)

GP2D010A120A

Global Power Technologies Group

DIODE SCHOTTKY 1.2KV 10A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 20µA @ 1200V
• Capacitance @ Vr, F: 635pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-220-2

GP2D006A060A

Global Power Technologies Group

DIODE SCHOTTKY 600V 6A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 6A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.65V @ 6A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 20µA @ 600V
• Capacitance @ Vr, F: 316pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-220-2

GSXF030A060S1-D3

Global Power Technologies Group

DIODE FAST REC 600V 30A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60ns
• Current - Reverse Leakage @ Vr: 25µA @ 600V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

Package: SOT-227-4, miniBLOC

GHXS030A120S-D4

Global Power Technologies Group

DIODE SCHOTKY 1200V 30A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

Package: SOT-227-4, miniBLOC

GSXD060A018S1-D3

Global Power Technologies Group

DIODE SCHOTTKY 180V 60A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 180V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 180V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

Package: SOT-227-4, miniBLOC

GSXD080A020S1-D3

Global Power Technologies Group

DIODE 200V 80A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 80A
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 80A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 200V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

Package: SOT-227-4, miniBLOC

GSXD120A015S1-D3

Global Power Technologies Group

DIODE SCHOTTKY 150V 120A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 120A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 120A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 150V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

Package: SOT-227-4, miniBLOC

GHXS030A120S-D3

Global Power Technologies Group

DIODE SCHOTKY 1200V 30A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

Package: SOT-227-4, miniBLOC

GSXD160A020S1-D3

Global Power Technologies Group

DIODE SCHOTTKY 200V 160A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 160A
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 160A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 200V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

Package: SOT-227-4, miniBLOC

GHXS015A120S-D1

Global Power Technologies Group

MOD SBD BRIDGE 1200V 15A SOT227

• Diode Type: Single Phase
• Technology: Silicon Carbide Schottky
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

Package: SOT-227-4, miniBLOC