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IXYS |
IGBT 1200V 240A 830W PLUS247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 240A
- Current - Collector Pulsed (Icm): 600A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
- Power - Max: 830W
- Switching Energy: 10mJ (on), 33mJ (off)
- Input Type: Standard
- Gate Charge: 420nC
- Td (on/off) @ 25°C: 40ns/490ns
- Test Condition: 960V, 100A, 1 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PLUS247?-3
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Package: TO-247-3 |
Stock2,000 |
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IXYS |
IGBT 1200V 188A 1150W PLUS247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 225A
- Current - Collector Pulsed (Icm): 530A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
- Power - Max: 1150W
- Switching Energy: 7.7mJ (on), 7.1mJ (off)
- Input Type: Standard
- Gate Charge: 250nC
- Td (on/off) @ 25°C: 30ns/153ns
- Test Condition: 600V, 100A, 1 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PLUS247?-3
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Package: TO-247-3 |
Stock6,576 |
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IXYS |
IGBT 1200V 30A 150W TO247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 30A
- Current - Collector Pulsed (Icm): 60A
- Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A
- Power - Max: 150W
- Switching Energy: 1.05mJ (off)
- Input Type: Standard
- Gate Charge: 69nC
- Td (on/off) @ 25°C: 25ns/150ns
- Test Condition: 960V, 15A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 40ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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Package: TO-247-3 |
Stock2,608 |
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IXYS |
IGBT 600V 24A 100W TO263AA
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 24A
- Current - Collector Pulsed (Icm): 48A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
- Power - Max: 100W
- Switching Energy: 90µJ (off)
- Input Type: Standard
- Gate Charge: 32nC
- Td (on/off) @ 25°C: 20ns/60ns
- Test Condition: 480V, 12A, 18 Ohm, 15V
- Reverse Recovery Time (trr): 35ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (IXGA)
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,848 |
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IXYS |
IGBT 3000V 50A 250W TO268
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 3000V
- Current - Collector (Ic) (Max): 50A
- Current - Collector Pulsed (Icm): 140A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
- Power - Max: 250W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 105nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 1.35µs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock4,416 |
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IXYS |
IGBT 1700V 75A 350W TO268
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 200A
- Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
- Power - Max: 350W
- Switching Energy: 11mJ (off)
- Input Type: Standard
- Gate Charge: 155nC
- Td (on/off) @ 25°C: 45ns/270ns
- Test Condition: 1020V, 32A, 2.7 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock3,776 |
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IXYS |
IGBT 1200V 240A 1500W PLUS247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 240A
- Current - Collector Pulsed (Icm): 700A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
- Power - Max: 1500W
- Switching Energy: 6.75mJ (on), 5.1mJ (off)
- Input Type: Standard
- Gate Charge: 412nC
- Td (on/off) @ 25°C: 35ns/176ns
- Test Condition: 600V, 100A, 1 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PLUS247?-3
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Package: TO-247-3 |
Stock7,584 |
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IXYS |
IGBT 4000V 30A 160W I4-PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 4000V
- Current - Collector (Ic) (Max): 30A
- Current - Collector Pulsed (Icm): 360A
- Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 90A
- Power - Max: 160W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 135nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5 (3 leads)
- Supplier Device Package: ISOPLUS i4-PAC?
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Package: i4-Pac?-5 (3 leads) |
Stock6,416 |
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IXYS |
IGBT 90A 600V SOT-227B
- IGBT Type: PT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 90A
- Power - Max: 250W
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
- Current - Collector Cutoff (Max): 750µA
- Input Capacitance (Cies) @ Vce: 4.5nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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Package: SOT-227-4, miniBLOC |
Stock2,464 |
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IXYS |
MOD IGBT PHASE LEG 600V ECOPAC2
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 69A
- Power - Max: 208W
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 75A
- Current - Collector Cutoff (Max): 800µA
- Input Capacitance (Cies) @ Vce: 2.8nF @ 25V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC2
- Supplier Device Package: ECO-PAC2
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Package: ECO-PAC2 |
Stock7,600 |
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IXYS |
MODULE IGBT CBI E1
- IGBT Type: NPT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 27.5A
- Power - Max: 77W
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 1.1nF @ 25V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E1
- Supplier Device Package: E1
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Package: E1 |
Stock6,240 |
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IXYS |
MOD IGBT RBSOA 1200V 425A Y3-LI
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 420A
- Power - Max: 1700W
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 300A
- Current - Collector Cutoff (Max): 3.3mA
- Input Capacitance (Cies) @ Vce: 17nF @ 25V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y3-Li
- Supplier Device Package: Y3-Li
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Package: Y3-Li |
Stock3,952 |
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IXYS |
MOSFET N-CH 1KV 21A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 21A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock7,600 |
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IXYS |
MOSFET N-CH 1000V 15A ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11900pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 290W (Tc)
- Rds On (Max) @ Id, Vgs: 430 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
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Package: ISOPLUS247? |
Stock6,368 |
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IXYS |
MOSFET N-CH 200V 88A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 44A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
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Package: TO-264-3, TO-264AA |
Stock7,280 |
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IXYS |
MOSFET N-CH 150V 120A PLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: PLUS220
- Package / Case: TO-220-3, Short Tab
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Package: TO-220-3, Short Tab |
Stock3,472 |
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IXYS |
MOSFET N-CH 100V 420A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 420A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 670nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 47000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1070W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock5,872 |
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IXYS |
MOSFET 6N-CH 40V 180A ISOPLUS
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 180A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 17-SMD, Gull Wing
- Supplier Device Package: ISOPLUS-DIL?
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Package: 17-SMD, Gull Wing |
Stock4,208 |
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IXYS |
MOSFET 6N-CH 75V 118A ISOPLUS
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 118A
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 17-SMD, Gull Wing
- Supplier Device Package: ISOPLUS-DIL?
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Package: 17-SMD, Gull Wing |
Stock3,392 |
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IXYS |
MOSFET 6N-CH 100V 90A ISOPLUS
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 90A
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 17-SMD, Gull Wing
- Supplier Device Package: ISOPLUS-DIL?
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Package: 17-SMD, Gull Wing |
Stock5,568 |
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IXYS |
MODULE AC CTLR 1600V KAMM-MODUL
- Structure: 1-Phase Controller - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 41A
- Current - On State (It (RMS)) (Max): 65A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
- Current - Hold (Ih) (Max): 100mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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Package: Module |
Stock4,192 |
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IXYS |
THYRISTOR MODULE 1400V 2X130A
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): 130A
- Current - On State (It (RMS)) (Max): 300A
- Voltage - Gate Trigger (Vgt) (Max): 2.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y4-M6
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Package: Y4-M6 |
Stock5,520 |
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IXYS |
DIODE GEN PURP 1.2KV 26A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 26A
- Voltage - Forward (Vf) (Max) @ If: 2.55V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 750µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-247-2 |
Stock19,800 |
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IXYS |
DIODE MODULE 7.2KV 3A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 7200V
- Current - Average Rectified (Io) (per Diode): 3A
- Voltage - Forward (Vf) (Max) @ If: 6V @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 7200V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: Module |
Stock3,296 |
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IXYS |
DIODE MODULE 1.8KV 190A Y4-M6
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800V
- Current - Average Rectified (Io) (per Diode): 190A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 300A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20mA @ 1800V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Y4-M6
- Supplier Device Package: Y4-M6
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Package: Y4-M6 |
Stock6,656 |
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IXYS |
DIODE BRIDGE FAST 1600V KAMM-MOD
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 2.2V @ 55A
- Current - Reverse Leakage @ Vr: 5mA @ 1600V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: KAMM
- Supplier Device Package: KAMM
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Package: KAMM |
Stock3,328 |
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IXYS |
RECT BRIDGE 3PH 72A 1800V FO-F-B
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1800V
- Current - Average Rectified (Io): 72A
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 150A
- Current - Reverse Leakage @ Vr: 300µA @ 1800V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: FO-F-B
- Supplier Device Package: FO-F-B
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Package: FO-F-B |
Stock6,912 |
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IXYS |
IC GATE DRIVER 2A 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 7.5ns, 6.5ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock42,684 |
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IXYS |
IC GATE DRIVER 4A 8-DIP
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 9ns, 8ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock5,184 |
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IXYS |
IC DIODE MODULE BOD 0.9A 2200V
- Voltage - Clamping: 2200V (2.2kV)
- Technology: Mixed Technology
- Number of Circuits: 3
- Number of Circuits: 3
- Applications: High Voltage
- Mounting Type: PCB, Through Hole
- Package / Case: Radial
- Supplier Device Package: BOD
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Package: Radial |
Stock4,248 |
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