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IXYS Products

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hot IXGH30N60A
IXYS

IGBT 600V 50A 200W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 30A
  • Power - Max: 200W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
Package: TO-247-3
Stock93,360
IXGH12N60CD1
IXYS

IGBT 600V 24A 100W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 20ns/60ns
  • Test Condition: 480V, 12A, 18 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
Package: TO-247-3
Stock3,392
hot IXGH24N60B
IXYS

IGBT 600V 48A 150W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
  • Power - Max: 150W
  • Switching Energy: 600µJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 25ns/150ns
  • Test Condition: 480V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
Package: TO-247-3
Stock18,084
IXGX75N250
IXYS

IGBT 2500V 170A 780W PLUS247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 2500V
  • Current - Collector (Ic) (Max): 170A
  • Current - Collector Pulsed (Icm): 530A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A
  • Power - Max: 780W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 410nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
Package: TO-247-3
Stock2,064
VII75-06P1
IXYS

MOD IGBT PHASE LEG 600V ECOPAC2

  • IGBT Type: NPT
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 69A
  • Power - Max: 208W
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 75A
  • Current - Collector Cutoff (Max): 800µA
  • Input Capacitance (Cies) @ Vce: 2.8nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC2
  • Supplier Device Package: ECO-PAC2
Package: ECO-PAC2
Stock7,600
MUBW10-12A7
IXYS

CONVERTER/BRAKE/INVERTER 2.3VCE

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 20A
  • Power - Max: 105W
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
  • Current - Collector Cutoff (Max): 600µA
  • Input Capacitance (Cies) @ Vce: 0.6nF @ 25V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E2
  • Supplier Device Package: E2
Package: E2
Stock2,144
IXFT1874 TR
IXYS

MOSFET N-CH TO268

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Package: -
Stock4,576
IXTU44N10T
IXYS

MOSFET N-CH 100V 44A TO-251

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4.5V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Package: TO-251-3 Short Leads, IPak, TO-251AA
Stock4,176
IXFN39N90
IXYS

MOSFET N-CH 900V 39A SOT-227B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 39A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 694W (Tc)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
Package: SOT-227-4, miniBLOC
Stock7,840
hot IXFX52N60Q2
IXYS

MOSFET N-CH 600V 52A PLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 735W (Tc)
  • Rds On (Max) @ Id, Vgs: 115 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
Package: TO-247-3
Stock7,856
IXTP3N110
IXYS

MOSFET N-CH 1100V 3A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1100V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Package: TO-220-3
Stock6,896
IXTT2N300P3HV
IXYS

2000V TO 3000V POLAR3 POWER MOSF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 3000V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 21 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 155°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Stock7,776
hot IXFH6N100Q
IXYS

MOSFET N-CH 1000V 6A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
Package: TO-247-3
Stock68,232
hot IXTP24P085T
IXYS

MOSFET P-CH 85V 24A TO-220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Package: TO-220-3
Stock46,908
MDC500-18IO1
IXYS

DIODE MODULE 1800V WC-500

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1800V
  • Current - On State (It (AV)) (Max): 545A
  • Current - On State (It (RMS)) (Max): 1294A
  • Voltage - Gate Trigger (Vgt) (Max): 3V
  • Current - Gate Trigger (Igt) (Max): 300mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
  • Current - Hold (Ih) (Max): 1A
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: WC-500
Package: WC-500
Stock7,952
DPG60IM400QB
IXYS

DIODE GEN PURP 400V 60A TO3P

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.47V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 1µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
  • Operating Temperature - Junction: -55°C ~ 175°C
Package: TO-3P-3, SC-65-3
Stock3,216
DSA75-16B
IXYS

DIODE AVALANCHE 1.6KV 110A DO203

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 110A
  • Voltage - Forward (Vf) (Max) @ If: 1.17V @ 150A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 6mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -40°C ~ 180°C
Package: DO-203AB, DO-5, Stud
Stock7,136
DHG10I1200PM
IXYS

DIODE GEN PURP 1.2KV 10A TO220FP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2.69V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 15µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220FPAC
  • Operating Temperature - Junction: -55°C ~ 150°C
Package: TO-220-2 Full Pack, Isolated Tab
Stock6,336
MDD600-22N1
IXYS

DIODE MODULE 2.2KV 883A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200V
  • Current - Average Rectified (Io) (per Diode): 883A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 18µs
  • Current - Reverse Leakage @ Vr: 50mA @ 2200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
Package: Module
Stock7,520
HTZ150C6K
IXYS

DIODE MODULE 6KV 3A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6000V
  • Current - Average Rectified (Io) (per Diode): 3A
  • Voltage - Forward (Vf) (Max) @ If: 6V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 6000V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
Package: Module
Stock5,600
DSA60C60HB
IXYS

DIODE ARRAY SCHOTTKY 60V TO247AD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500nA @ 60V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
Package: TO-247-3
Stock5,664
VBO21-08NO7
IXYS

DIODE BRIDGE 21A 800V ECO-PAC1

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 21A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC1
  • Supplier Device Package: ECO-PAC1
Package: ECO-PAC1
Stock6,112
IXS839AQ2T/R
IXYS

IC MOSFET DRIVER SYNC BUCK 10QFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 2A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 24V
  • Rise / Fall Time (Typ): 20ns, 15ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-VFQFN Exposed Pad
  • Supplier Device Package: 10-QFN (3x3)
Package: 10-VFQFN Exposed Pad
Stock5,264
IX2R11S3
IXYS

IC DRVR HALF BRIDGE 2A 16-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 35 V
  • Logic Voltage - VIL, VIH: 6V, 9.6V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 500V
  • Rise / Fall Time (Typ): 8ns, 7ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
Package: 16-SOIC (0.295", 7.50mm Width)
Stock4,496
IXCY40M45
IXYS

IC CURRENT REGULATOR DPAK

  • Function: Current Regulator
  • Sensing Method: -
  • Accuracy: -
  • Voltage - Input: -
  • Current - Output: 40mA
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock5,296
IX526119
IXYS

ITF40PF1200DHGTLB-TRR

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Package: -
Request a Quote
IXTP34N65X2
IXYS

MOSFET N-CH 650V 34A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
Package: -
Stock492
CME30E1600PZ-TRL
IXYS

SCR 1.6KV 35A TO263

  • Voltage - Off State: 1.6 kV
  • Voltage - Gate Trigger (Vgt) (Max): 1.3 V
  • Current - Gate Trigger (Igt) (Max): 50 mA
  • Voltage - On State (Vtm) (Max): 1.92 V
  • Current - On State (It (AV)) (Max): 30 A
  • Current - On State (It (RMS)) (Max): 35 A
  • Current - Hold (Ih) (Max): 90 mA
  • Current - Off State (Max): -
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
  • SCR Type: Standard Recovery
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
Package: -
Request a Quote
IXTQ34N65X2M
IXYS

DISCRETE MOSFET 34A 650V X2 TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
Package: -
Request a Quote
MIXG240W1200PT-PC
IXYS

IGBT MODULE MIXG240W1200PTEH-PC

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Package: -
Request a Quote