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IXYS |
IGBT 600V 14A 75W TO263
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 14A
- Current - Collector Pulsed (Icm): 30A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
- Power - Max: 75W
- Switching Energy: 120µJ (off)
- Input Type: Standard
- Gate Charge: 25nC
- Td (on/off) @ 25°C: 10ns/65ns
- Test Condition: 480V, 7A, 18 Ohm, 15V
- Reverse Recovery Time (trr): 35ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (IXGA)
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,048 |
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IXYS |
IGBT 600V 40A 150W TO263
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 40A
- Current - Collector Pulsed (Icm): 100A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
- Power - Max: 150W
- Switching Energy: 160µJ (on), 90µJ (off)
- Input Type: Standard
- Gate Charge: 25nC
- Td (on/off) @ 25°C: 16ns/75ns
- Test Condition: 400V, 12A, 22 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (IXGA)
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,232 |
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IXYS |
IGBT 650V 170A 750W TO247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 170A
- Current - Collector Pulsed (Icm): 360A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
- Power - Max: 750W
- Switching Energy: 2.8mJ (on), 1mJ (off)
- Input Type: Standard
- Gate Charge: 123nC
- Td (on/off) @ 25°C: 27ns/93ns
- Test Condition: 400V, 60A, 3 Ohm, 15V
- Reverse Recovery Time (trr): 150ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXYH)
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Package: TO-247-3 |
Stock4,432 |
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IXYS |
MOD IGBT H-BRIDGE 1200V 125A E3
- IGBT Type: NPT
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 125A
- Power - Max: 640W
- Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A
- Current - Collector Cutoff (Max): 1.3mA
- Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E3
- Supplier Device Package: E3
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Package: E3 |
Stock5,552 |
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IXYS |
MODULE IGBT CBI
- IGBT Type: NPT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 18A
- Power - Max: 70W
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
- Current - Collector Cutoff (Max): 600µA
- Input Capacitance (Cies) @ Vce: 0.45nF @ 25V
- Input: Single Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: MiniPack2
- Supplier Device Package: MiniPack2
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Package: MiniPack2 |
Stock2,192 |
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IXYS |
MOSFET N-CH ISOPLUS247
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock6,608 |
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IXYS |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock4,416 |
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IXYS |
MOSFET N-CH 150V ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
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Package: ISOPLUS220? |
Stock5,968 |
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IXYS |
MOSFET N-CH 600V 50A SMPD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: ISOPLUS-SMPD?.B
- Package / Case: 9-SMD Module
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Package: 9-SMD Module |
Stock5,600 |
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IXYS |
MOSFET N-CH 1000V 10A ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
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Package: ISOPLUS247? |
Stock14,148 |
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IXYS |
MOSFET P-CH 150V 44A TO-263
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 298W (Tc)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,960 |
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IXYS |
MOSFET N-CH 1000V 4A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXFA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,104 |
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IXYS |
MOSFET P-CH 50V 48A TO-252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,168 |
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IXYS |
MOSFET N-CH 500V 22A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 350W (Tc)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock390,000 |
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IXYS |
RF MOSFET N-CHANNEL PLUS247-3
- Transistor Type: N-Channel
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: 1mA
- Noise Figure: -
- Current - Test: -
- Power - Output: 350W
- Voltage - Rated: 500V
- Package / Case: TO-247-3
- Supplier Device Package: PLUS247?-3
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Package: TO-247-3 |
Stock6,504 |
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IXYS |
SCR THRYRISTOR 2200V WC-500
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 2200V
- Current - On State (It (AV)) (Max): 700A
- Current - On State (It (RMS)) (Max): 1331A
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 18200 @ 50MHz
- Current - Hold (Ih) (Max): -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: WC-500
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Package: WC-500 |
Stock7,728 |
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IXYS |
MOD THYRISTOR/DIO 1200V TO-240AA
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 115A
- Current - On State (It (RMS)) (Max): 180A
- Voltage - Gate Trigger (Vgt) (Max): 2.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1800A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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Package: TO-240AA |
Stock6,784 |
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IXYS |
RECT BRIDGE 1PH 800V V1-A-PAK
- Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
- Number of SCRs, Diodes: 2 SCRs, 4 Diodes
- Voltage - Off State: 800V
- Current - On State (It (AV)) (Max): 16A
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): 1V
- Current - Gate Trigger (Igt) (Max): 65mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 150A, 170A
- Current - Hold (Ih) (Max): 100mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: V1A-PAK
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Package: V1A-PAK |
Stock3,648 |
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IXYS |
DIODE GEN 600V 9A ISOPLUS247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 9A
- Voltage - Forward (Vf) (Max) @ If: 4V @ 9A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 15ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: ISOPLUS247?
- Supplier Device Package: ISOPLUS247?
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: ISOPLUS247? |
Stock6,992 |
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IXYS |
DIODE SCHOTTKY 45V 15A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock6,128 |
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IXYS |
DIODE ARRAY 1600V 45A ISOPLUS247
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io) (per Diode): 45A
- Voltage - Forward (Vf) (Max) @ If: 1.22V @ 40A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 1600V
- Operating Temperature - Junction: -40°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: ISOPLUS247?
- Supplier Device Package: ISOPLUS247?
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Package: ISOPLUS247? |
Stock7,072 |
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IXYS |
DIODE ARRAY SCHOTTKY 45V TO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 670mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 45V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock3,216 |
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IXYS |
IC DRVR HALF BRIDGE GATE 14DIP
- Driven Configuration: -
- Channel Type: -
- Number of Drivers: -
- Gate Type: -
- Voltage - Supply: -
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: -
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: 14-DIP
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Package: 14-DIP (0.300", 7.62mm) |
Stock5,120 |
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IXYS |
IC CURRENT REGULATOR DPAK
- Function: Current Regulator
- Sensing Method: -
- Accuracy: -
- Voltage - Input: -
- Current - Output: 50mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,136 |
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IXYS |
IXGA48N60B3 TRL
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 48 A
- Current - Collector Pulsed (Icm): 280 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
- Power - Max: 300 W
- Switching Energy: 840µJ (on), 660µJ (off)
- Input Type: Standard
- Gate Charge: 115 nC
- Td (on/off) @ 25°C: 22ns/130ns
- Test Condition: 480V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2PAK)
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Package: - |
Request a Quote |
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IXYS |
MOSFET N-CH 19A SOT-227B
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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IXYS |
DIODE SCHOTTKY 150V 15A TO252AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 250 µA @ 150 V
- Capacitance @ Vr, F: 82pF @ 24V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 1.6KV 45A TO268AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 45A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
- Capacitance @ Vr, F: 19pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA (D3Pak-HV)
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock90 |
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IXYS |
POWER DIODE DISCRETES-FRED TO-24
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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IXYS |
TRIAC 1.2KV 44A TO263HV
- Triac Type: Standard
- Voltage - Off State: 1.2 kV
- Current - On State (It (RMS)) (Max): 44 A
- Voltage - Gate Trigger (Vgt) (Max): 1.3 V
- Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 215A
- Current - Gate Trigger (Igt) (Max): 40 mA
- Current - Hold (Ih) (Max): 50 mA
- Configuration: Single
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
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Package: - |
Request a Quote |
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