Infineon Technologies Products

IRGP4063PBF

Infineon Technologies

IGBT 600V 96A 330W TO247AC

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 96A
• Current - Collector Pulsed (Icm): 144A
• Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
• Power - Max: 330W
• Switching Energy: 625µJ (on), 1.28mJ (off)
• Input Type: Standard
• Gate Charge: 95nC
• Td (on/off) @ 25°C: 60ns/145ns
• Test Condition: 400V, 48A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

Package: TO-247-3

IPI25N06S3-25

Infineon Technologies

MOSFET N-CH 55V 25A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1862pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 48W (Tc)
• Rds On (Max) @ Id, Vgs: 25.1 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

IRF4104L

Infineon Technologies

MOSFET N-CH 40V 75A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

SPP12N50C3HKSA1

Infineon Technologies

MOSFET N-CH 560V 11.6A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 560V
• Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

Package: TO-220-3

IRLR8113

Infineon Technologies

MOSFET N-CH 30V 94A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2920pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 89W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF1704

Infineon Technologies

MOSFET N-CH 40V 170A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Package: TO-220-3

IRL2203NSTRR

Infineon Technologies

MOSFET N-CH 30V 116A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 180W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB80N04S2H4ATMA2

Infineon Technologies

MOSFET N-CHANNEL_30/40V

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Package: -

IPI70N10S3L12AKSA1

Infineon Technologies

MOSFET N-CH 100V 70A TO262-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 83µA
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5550pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 12.1 mOhm @ 70A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

IPD50N04S410ATMA1

Infineon Technologies

MOSFET N-CH 40V 50A TO252-3-313

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 15µA
• Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 41W (Tc)
• Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3-313
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFH8316TRPBF

Infineon Technologies

MOSFET N-CH 30V 27A PQFN5X6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.6W (Ta), 59W (Tc)
• Rds On (Max) @ Id, Vgs: 2.95 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PQFN (5x6)
• Package / Case: 8-PowerTDFN

Package: 8-PowerTDFN

AUIRF7304Q

Infineon Technologies

MOSFET 2P-CH 20V 4A 8SOIC

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.3A
• Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Supplier Device Package: 8-SO

Package: 8-SOIC

BC846SH6327XTSA1

Infineon Technologies

TRANS 2NPN 65V 0.1A SOT363

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 65V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

Package: 6-VSSOP, SC-88, SOT-363

BB 659 E7908

Infineon Technologies

DIODE VAR CAP 30V 20MA SCD-80

• Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
• Capacitance Ratio: 14.7
• Capacitance Ratio Condition: C1/C28
• Voltage - Peak Reverse (Max): 30V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-80
• Supplier Device Package: PG-SCD80-2

Package: SC-80

BAT1705WE6327HTSA1

Infineon Technologies

DIODE SCHOTTKY RF CC SOT-323

• Diode Type: Schottky - 1 Pair Common Cathode
• Voltage - Peak Reverse (Max): 4V
• Current - Max: 130mA
• Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
• Resistance @ If, F: 15 Ohm @ 5mA, 10kHz
• Power Dissipation (Max): 150mW
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

Package: SC-70, SOT-323

TLE4274DV50ITJKKNTMA1

Infineon Technologies

IC REG LINEAR 400MA TO252-3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 250mA
• Current - Output: 400mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 220µA ~ 30mA
• PSRR: 60dB (100Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

TLE7244SLXUMA2

Infineon Technologies

IC DRIVER SPI 8CH LS 24SSOP

• Switch Type: Relay, Solenoid Driver
• Number of Outputs: 8
• Ratio - Input:Output: 1:2
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 4.5 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Current - Output (Max): 290mA
• Rds On (Typ): 800 mOhm
• Input Type: -
• Features: -
• Fault Protection: Open Load Detect, Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 24-SSOP (0.154", 3.90mm Width)
• Supplier Device Package: PG-SSOP-24-7

Package: 24-SSOP (0.154", 3.90mm Width)

ESD18VU1B-02LRH E6327

Infineon Technologies

TVS DIODE 18.5VWM 17VC TSLP2-17

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 18.5V (Max)
• Voltage - Breakdown (Min): 20V
• Voltage - Clamping (Max) @ Ipp: 17V (Typ)
• Current - Peak Pulse (10/1000µs): 2A (8/20µs)
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: RF Antenna
• Capacitance @ Frequency: 0.3pF @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: TSLP-2-17

Package: SOD-882

TCA505BCHIPX1SA1

Infineon Technologies

IC SWITCH PROXIMITY INDCT CHIP

• Type: Proximity Only
• Proximity Detection: Yes
• Number of Inputs: 1
• LED Driver Channels: -
• Interface: -
• Resolution: -
• Voltage - Supply: 3.1 V ~ 40 V
• Current - Supply: 550µA
• Operating Temperature: -40°C ~ 110°C
• Package / Case: -
• Supplier Device Package: -

Package: -

SRF55V10PHCNBX1SA1

Infineon Technologies

IC INTERFACE EEPROM

• Type: RFID Transponder
• Frequency: 13.56MHz
• Standards: ISO 15693, ISO 18000-3
• Interface: -
• Voltage - Supply: -
• Operating Temperature: -25°C ~ 70°C
• Package / Case: -
• Supplier Device Package: -

Package: -

S25FL064LABMFV011

Infineon Technologies

IC FLASH 64MBIT SPI/QUAD 8SOIC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 108 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 8-SOIC

Package: -

TLE9879QXW40XUMA2

Infineon Technologies

IC SOC MOTOR DRIVER 48VQFN

• Applications: -
• Core Processor: ARM® Cortex®-M3
• Program Memory Type: FLASH (128kB)
• Controller Series: TLE987x
• RAM Size: 6K x 8
• Interface: DMA, LIN, SPI, SSC, UART
• Number of I/O: 10
• Voltage - Supply: 5.5V ~ 28V
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-29

Package: -

S27KL0643DPBHB023

Infineon Technologies

IC PSRAM 64MBIT SPI/OCTAL 24FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 64Mbit
• Memory Interface: SPI - Octal I/O
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 36ns
• Access Time: 36 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

Package: -

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IPD088N06N3GATMA1

Infineon Technologies

MOSFET N-CH 60V 50A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 34µA
• Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 71W (Tc)
• Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3-311
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Package: -

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PSB2170HV2-1

Infineon Technologies

ACOUSTIC ECHO CANCELLER ACE

• Function: -
• Interface: -
• Number of Circuits: -
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

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T1081N70TOHPRXPSA1

Infineon Technologies

HIGH POWER THYR / DIO

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 7 kV
• Current - On State (It (AV)) (Max): 1800 A
• Current - On State (It (RMS)) (Max): 2040 A
• Voltage - Gate Trigger (Vgt) (Max): 2.5 V
• Current - Gate Trigger (Igt) (Max): 350 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 35000A @ 50Hz
• Current - Hold (Ih) (Max): 350 mA
• Operating Temperature: -40°C ~ 125°C (TC)
• Mounting Type: Chassis Mount
• Package / Case: TO-200AF

Package: -

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IKU06N60R

Infineon Technologies

IGBT TRENCH 600V 12A TO251-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 12 A
• Current - Collector Pulsed (Icm): 18 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
• Power - Max: 100 W
• Switching Energy: 330µJ
• Input Type: Standard
• Gate Charge: 48 nC
• Td (on/off) @ 25°C: 12ns/127ns
• Test Condition: 400V, 6A, 23Ohm, 15V
• Reverse Recovery Time (trr): 68 ns
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
• Supplier Device Package: PG-TO251-3

Package: -

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IPA65R420CFDXKSA2

Infineon Technologies

MOSFET N-CH 650V 8.7A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 300µA
• Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 31.2W (Tc)
• Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-FP
• Package / Case: TO-220-3 Full Pack

Package: -

FP50R07N2E4B11BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2B-411

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 70 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO2B

Package: -

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S29GL064S90TFI020

Infineon Technologies

IC FLASH 64MBIT PARALLEL 56TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 90 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 56-TSOP

Package: -

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