Infineon Technologies Products

IRGS4B60KD1TRRP

Infineon Technologies

IGBT 600V 11A 63W D2PAK

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 11A
• Current - Collector Pulsed (Icm): 22A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
• Power - Max: 63W
• Switching Energy: 73µJ (on), 47µJ (off)
• Input Type: Standard
• Gate Charge: 12nC
• Td (on/off) @ 25°C: 22ns/100ns
• Test Condition: 400V, 4A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 93ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPD60R600CPBTMA1

Infineon Technologies

MOSFET N-CH 600V 6.1A TO-252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 220µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 60W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

IRL3714ZSPBF

Infineon Technologies

MOSFET N-CH 20V 36A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.55V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPP100N08S2L07AKSA1

Infineon Technologies

MOSFET N-CH 75V 100A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

Package: TO-220-3

AUIRLZ24NSTRL

Infineon Technologies

MOSFET N-CH 55V D2-PAK AUTO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SMBT3904E6433HTMA1

Infineon Technologies

TRANS NPN 40V 0.2A SOT23

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 300MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

BCR08PNE6327BTSA1

Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 170MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

Package: 6-VSSOP, SC-88, SOT-363

IRAMS10UP60B-S

Infineon Technologies

IC MOD PWR HYBRID 600V 10A

• Type: -
• Configuration: -
• Current: -
• Voltage: -
• Voltage - Isolation: -
• Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads

Package: 23-PowerSIP Module, 19 Leads, Formed Leads

BAR 90-081LS E6327

Infineon Technologies

DIODE ARRAY 80V 100MA TSSLP-8

• Diode Type: PIN - 4 Independent
• Voltage - Peak Reverse (Max): 80V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
• Resistance @ If, F: 800 mOhm @ 10mA, 100MHz
• Power Dissipation (Max): 150mW
• Operating Temperature: 150°C (TJ)
• Package / Case: 8-XFDFN
• Supplier Device Package: PG-TSSLP-8

Package: 8-XFDFN

IRS2332DJPBF

Infineon Technologies

IC DVR 3-PHASE BRIDGE PLCC44

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.2V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 35ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 44-LCC (J-Lead), 32 Leads
• Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)

Package: 44-LCC (J-Lead), 32 Leads

IRS2008SPBF

Infineon Technologies

IC DRIVER HALF-BRIDGE 8-SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Synchronous
• Number of Drivers: 2
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.5V
• Current - Peak Output (Source, Sink): 290mA, 600mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 200V
• Rise / Fall Time (Typ): 70ns, 30ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

SAF-XC164SM-16F20F BA

Infineon Technologies

IC MCU 16BIT 128KB FLASH 64LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SPI, UART/USART
• Peripherals: PWM, WDT
• Number of I/O: 47
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
• Data Converters: A/D 14x8/10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

Package: 64-LQFP

XMC1302T016X0032ABXUMA1

Infineon Technologies

IC MCU 32BIT 32KB FLASH 16TSSOP

• Core Processor: ARM? Cortex?-M0
• Core Size: 32-Bit
• Speed: 32MHz
• Connectivity: I2C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
• Number of I/O: 11
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 11x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: -
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: PG-TSSOP-16-8

Package: 16-TSSOP (0.173", 4.40mm Width)

TLE4984CX2SF47HAMA1

Infineon Technologies

SPEED SENSORS 3SSO

• Function: -
• Technology: -
• Polarization: -
• Sensing Range: -
• Test Condition: -
• Voltage - Supply: -
• Current - Supply (Max): -
• Current - Output (Max): -
• Output Type: -
• Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

Package: -

TDA5220XUMA1

Infineon Technologies

RECEIVER SHR FSK/ASK SGL TSSOP28

• Frequency: 810MHz ~ 870MHz, 400MHz ~ 440MHz
• Sensitivity: -110dBm
• Data Rate (Max): 100 kbps
• Modulation or Protocol: ASK, FSK
• Applications: RKE, Remote Control Systems
• Current - Receiving: 5.9mA
• Data Interface: PCB, Surface Mount
• Memory Size: -
• Antenna Connector: PCB, Surface Mount
• Features: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 28-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: PG-TSSOP-28

Package: 28-TSSOP (0.173", 4.40mm Width)

ASP1211-A80DT

Infineon Technologies

IC REGULATOR PG-VQFN-56-901

• Applications: -
• Voltage - Input: -
• Number of Outputs: -
• Voltage - Output: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

IR3570AMIS03TRP

Infineon Technologies

IC REGULATOR PG-VQFN-40-901

• Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-VFQFN Exposed Pad
• Supplier Device Package: 40-VQFN (5x5)

Package: 40-VFQFN Exposed Pad

FP30R06W1E3PBPSA1

Infineon Technologies

LOW POWER EASY AG-EASY1B-311

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

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IRF7413ZTRPBFXTMA1

Infineon Technologies

TRENCH <= 40V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-DSO-8-902
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Package: -

IRLML2402TR

Infineon Technologies

MOSFET N-CH 20V 1.2A SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 250mOhm @ 930mA, 4.5V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: Micro3™/SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

Package: -

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CY9BF429TBGL-GK7E1

Infineon Technologies

MULTI-MARKET MCUS

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 60MHz
• Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 154
• Program Memory Size: 1.5625MB (1.5625M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 192K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 24x12b SAR; D/A 2x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 192-LFBGA
• Supplier Device Package: 192-FBGA (12x12)

Package: -

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T1220N28TOFVTXPSA1

Infineon Technologies

SCR MODULE 2800V 2625A DO200AC

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 2.8 kV
• Current - On State (It (AV)) (Max): 1220 A
• Current - On State (It (RMS)) (Max): 2625 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
• Current - Hold (Ih) (Max): 500 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Clamp On
• Package / Case: TO-200AC

Package: -

IAUCN04S7N020ATMA1

Infineon Technologies

MOSFET_(20V 40V)

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-33
• Package / Case: 8-PowerTDFN

Package: -

CY62157GE30-45BVXI

Infineon Technologies

IC SRAM 8MBIT PARALLEL 48VFBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 8Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 45ns
• Access Time: 45 ns
• Voltage - Supply: 2.2V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-VFBGA
• Supplier Device Package: 48-VFBGA (6x8)

Package: -

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S6J335EKBESE20000

Infineon Technologies

TRAVEO-40NM

• Core Processor: ARM® Cortex®-R5F
• Core Size: 32-Bit
• Speed: 240MHz
• Connectivity: CANbus, CSIO, I2C, LINbus, SCI, UART/USART
• Peripherals: DMA, LVD, LVR, POR, PWM, WDT
• Number of I/O: 208
• Program Memory Size: 4.16MB (4.16M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 112K x 8
• RAM Size: 544K x 8
• Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 208-LQFP Exposed Pad
• Supplier Device Package: 208-TEQFP (28x28)

Package: -

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CHOPPERKIT4IHM30694NOSA1

Infineon Technologies

IGBT MODULE CHOPPER KIT A-PSAO-1

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

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CY9AFA41MBBGL-GK9E1

Infineon Technologies

IC MCU 32BIT 96KB FLASH 96FBGA

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit Single-Core
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, UART/USART
• Peripherals: DMA, LCD, LVD, POR, PWM, WDT
• Number of I/O: 66
• Program Memory Size: 96KB (96K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
• Data Converters: A/D 17x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 96-LFBGA
• Supplier Device Package: 96-FBGA (6x6)

Package: -

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FF1000R17IE4B60BPSA1

Infineon Technologies

PP IHM I

• IGBT Type: -
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 1390 A
• Power - Max: 6250 W
• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

Package: -

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IPC60R600E6UNSAWNX6SA1

Infineon Technologies

MOSFET N-CH BARE DIE

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Package: -

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IPLK60R600PFD7ATMA1

Infineon Technologies

MOSFET N-CH 600V 7A THIN-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 80µA
• Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-52
• Package / Case: 8-PowerTDFN

Package: -

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