Infineon Technologies Products

SKB10N60AATMA1

Infineon Technologies

IGBT 600V 20A 92W TO263-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
• Power - Max: 92W
• Switching Energy: 320µJ
• Input Type: Standard
• Gate Charge: 52nC
• Td (on/off) @ 25°C: 28ns/178ns
• Test Condition: 400V, 10A, 25 Ohm, 15V
• Reverse Recovery Time (trr): 220ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRGBC20UD2

Infineon Technologies

IGBT W/DIODE 600V 13A TO-220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 13A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6.5A
• Power - Max: 60W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

Package: TO-220-3

IRG7PH46UDPBF

Infineon Technologies

IGBT 1200V 40A 390W TO247AC

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
• Power - Max: 390W
• Switching Energy: 2.61mJ (on), 1.85mJ (off)
• Input Type: Standard
• Gate Charge: 220nC
• Td (on/off) @ 25°C: 45ns/410ns
• Test Condition: 600V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 140ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

Package: TO-247-3

FS600R07A2E3B32BOSA1

Infineon Technologies

IGBT MODULES

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

IRFB23N20D

Infineon Technologies

MOSFET N-CH 200V 24A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Package: TO-220-3

BSS139H6906XTSA1

Infineon Technologies

MOSFET N-CH 250V 100MA SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
• Vgs(th) (Max) @ Id: 1V @ 56µA
• Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 76pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 360mW (Ta)
• Rds On (Max) @ Id, Vgs: 14 Ohm @ 100mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

Package: TO-261-4, TO-261AA

AUIRLU3114Z

Infineon Technologies

MOSFET NCH 40V 130A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 3810pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 42A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: IPAK (TO-251)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Package: TO-251-3 Short Leads, IPak, TO-251AA

PXFC191507FCV1R250XTMA1

Infineon Technologies

IC AMP RF LDMOS

• Transistor Type: -
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Power - Output: -
• Voltage - Rated: -
• Package / Case: -
• Supplier Device Package: -

Package: -

TLE8264EXUMA4

Infineon Technologies

IC SYSTEM BASIS CHIP DSO-36

• Type: -
• Applications: -
• Mounting Type: Surface Mount
• Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-36

Package: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad

BTS500251TADATMA1

Infineon Technologies

HIC-PROFET

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 8 V ~ 18 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 25A
• Rds On (Typ): 3.9 mOhm
• Input Type: -
• Features: -
• Fault Protection: Over Temperature, Over Voltage, Reverse Battery
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: -
• Supplier Device Package: -

Package: -

IRS2304SPBF

Infineon Technologies

IC DRIVER HALF-BRIDGE 600V 8SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.7V, 2.3V
• Current - Peak Output (Source, Sink): 290mA, 600mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 70ns, 35ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

2ED020I12FIXUMA1

Infineon Technologies

IC IGBT DRIVER DUAL PDSO18

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 14 V ~ 18 V
• Logic Voltage - VIL, VIH: 0.8V, 2V
• Current - Peak Output (Source, Sink): 1A, 2A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 1200V
• Rise / Fall Time (Typ): 20ns, 20ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width) 18 leads
• Supplier Device Package: PG-DSO-18-2

Package: 20-SOIC (0.295", 7.50mm Width) 18 leads

SAF-TC1115-L100EB BB

Infineon Technologies

IC MCU 32BIT ROMLESS 208LBGA

• Core Processor: TriCore?
• Core Size: 32-Bit
• Speed: 100MHz
• Connectivity: CAN, EBI/EMI, FIFO, I2C, IrDA, SPI, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number of I/O: 72
• Program Memory Size: -
• Program Memory Type: ROMless
• EEPROM Size: -
• RAM Size: 144K x 8
• Voltage - Supply (Vcc/Vdd): 1.43 V ~ 1.58 V
• Data Converters: -
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 208-LBGA
• Supplier Device Package: P-LBGA-208-2

Package: 208-LBGA

TLE4957C2NE6747HAMA1

Infineon Technologies

IC HALL EFFECT SENSOR SSO-3

• Function: -
• Technology: -
• Polarization: -
• Sensing Range: -
• Test Condition: -
• Voltage - Supply: -
• Current - Supply (Max): -
• Current - Output (Max): -
• Output Type: -
• Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

Package: -

IR3564AMGB04TRP

Infineon Technologies

IC REG BUCK 40VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

Package: -

XC2060M104F80LAAKXQMA1

Infineon Technologies

IC MCU 16BIT 100LQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

PEF2055NV2-1

Infineon Technologies

PCM INTERFACE CONTROLLER

• Function: PCM Interface Controller
• Interface: ISDN, PCM
• Number of Circuits: 1
• Voltage - Supply: 5V
• Current - Supply: 9.5mA
• Power (Watts): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 44-LCC (J-Lead)
• Supplier Device Package: P-LCC-44-1

Package: -

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IRF60DM206ATMA1

Infineon Technologies

FET N-CHANNEL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.7V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 96W (Tc)
• Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DirectFET™ Isometric ME
• Package / Case: DirectFET™ Isometric ME

Package: -

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CY15V116QI-20BKXC

Infineon Technologies

IC FRAM 16MBIT SPI 20MHZ 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 16Mbit
• Memory Interface: SPI
• Clock Frequency: 20 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20 ns
• Voltage - Supply: 1.71V ~ 1.89V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-FBGA (6x8)

Package: -

SAF-XE167K-48F66LAC

Infineon Technologies

16-BIT FLASH MICROCONTROLLER, 80

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

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CY9AF004BGL-G105MJK7ERE1

Infineon Technologies

IC MCU 32BIT 121PFBGA

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

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CYT2BL4BAAQ0AZSGS

Infineon Technologies

IC MCU 32BIT 4.063MB FLSH 80LQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 160MHz
• Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
• Number of I/O: 63
• Program Memory Size: 4.063MB (4.063M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 512K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 52x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 80-LQFP
• Supplier Device Package: 80-LQFP (12x12)

Package: -

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S28HS01GTFPBHI033

Infineon Technologies

IC FLASH 1GBIT SPI/OCTAL 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: SPI - Octal I/O
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 1.7ms
• Access Time: 5.45 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (8x8)

Package: -

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AIMZHN120R020M1TXKSA1

Infineon Technologies

SIC_DISCRETE

• FET Type: N-Channel
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
• Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
• Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
• Vgs (Max): +23V, -5V
• FET Feature: -
• Power Dissipation (Max): 429W (Tc)
• Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-4-14
• Package / Case: TO-247-4

Package: -

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CY8C4146LQSS455XQSA1

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, WDT
• Number of I/O: 54
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 64-VFQFN Exposed Pad
• Supplier Device Package: 64-QFN (9x9)

Package: -

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CG8885AMT

Infineon Technologies

IC

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

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BTG70020A1ESWXUMA1

Infineon Technologies

PROFET

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: Logic
• Voltage - Load: 4.1V ~ 28V
• Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
• Current - Output (Max): 21.5A
• Rds On (Typ): 2.2mOhm
• Input Type: Non-Inverting
• Features: Slew Rate Controlled
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-TSDSO-24-32

Package: -

IR3585BMSY01TRP

Infineon Technologies

IC REG BUCK 48VQFN

• Applications: -
• Voltage - Input: -
• Number of Outputs: -
• Voltage - Output: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

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AIGB50N65F5ATMA1

Infineon Technologies

DISCRETE SWITCHES

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3-2

Package: -

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IRFH5053TRPBFXUMA1

Infineon Technologies

TRENCH >=100V

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Package: -

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