Memory

IS42SM32400G-75BI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 90BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile
• Memory Size: 128Mb (4M x 32)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 6ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

Package: 90-TFBGA

M29F800FB52M3F2 TR

Micron Technology Inc.

IC FLASH 8MBIT 55NS 44SO

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 8Mb (1M x 8, 512K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-SOIC (0.496", 12.60mm Width)
• Supplier Device Package: 44-SO

Package: 44-SOIC (0.496", 12.60mm Width)

FM25H20-DG

Cypress Semiconductor Corp

IC FRAM 2MBIT 40MHZ 8TDFN

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 2Mb (256K x 8)
• Memory Interface: SPI
• Clock Frequency: 40MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: 8-TDFN (5x6)

Package: 8-WDFN Exposed Pad

MT48H8M16LFB4-6 IT:K

Micron Technology Inc.

IC SDRAM 128MBIT 167MHZ 54VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPSDR
• Memory Size: 128Mb (8M x 16)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-VFBGA
• Supplier Device Package: 54-VFBGA (8x8)

Package: 54-VFBGA

70V5388S100BC8

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 100MHZ 256BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Quad Port, Synchronous
• Memory Size: 1.125Mb (64K x 18)
• Memory Interface: Parallel
• Clock Frequency: 100MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.6ns
• Voltage - Supply: 3.15 V ~ 3.45 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 256-LBGA
• Supplier Device Package: 256-CABGA (17x17)

Package: 256-LBGA

RC28F256J3D95A

Micron Technology Inc.

IC FLASH 256MBIT 95NS 64EASYBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 256Mb (32M x 8, 16M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 95ns
• Access Time: 95ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-TBGA
• Supplier Device Package: 64-EasyBGA (10x13)

Package: 64-TBGA

M29F040B90N1

Micron Technology Inc.

IC FLASH 4MBIT 90NS 32TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 4Mb (512K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 90ns
• Access Time: 90ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 32-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 32-TSOP (8x20)

Package: 32-TFSOP (0.724", 18.40mm Width)

CY7C1021CV33-10BAXI

Cypress Semiconductor Corp

IC SRAM 1MBIT 10NS 48FBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 1Mb (64K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 10ns
• Access Time: 10ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFBGA
• Supplier Device Package: 48-FBGA (7x7)

Package: 48-TFBGA

CY7C1357C-100AXCT

Cypress Semiconductor Corp

IC SRAM 9MBIT 100MHZ 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 9Mb (512K x 18)
• Memory Interface: Parallel
• Clock Frequency: 100MHz
• Write Cycle Time - Word, Page: -
• Access Time: 7.5ns
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x20)

Package: 100-LQFP

AT27C256R-70RI

Microchip Technology

IC OTP 256KBIT 70NS 28SOIC

• Memory Type: Non-Volatile
• Memory Format: EPROM
• Technology: EPROM - OTP
• Memory Size: 256Kb (32K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 70ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.342", 8.69mm Width)
• Supplier Device Package: 28-SOIC

Package: 28-SOIC (0.342", 8.69mm Width)

MT52L512M64D4GN-107 WT:B TR

Micron Technology Inc.

IC SDRAM 32GBIT 933MHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR3
• Memory Size: 32Gb (512M x 64)
• Memory Interface: -
• Clock Frequency: 933MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.2V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

CY7C1145KV18-450BZXC

Cypress Semiconductor Corp

IC SRAM 18MBIT 450MHZ 165FBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous, QDR II+
• Memory Size: 18Mb (512K x 36)
• Memory Interface: Parallel
• Clock Frequency: 450MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-LBGA
• Supplier Device Package: 165-FBGA (13x15)

Package: 165-LBGA

DS1230ABP-70+

Maxim Integrated

IC NVSRAM 256KBIT 70NS 34PCM

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 256Kb (32K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 34-PowerCap? Module
• Supplier Device Package: 34-PowerCap Module

Package: 34-PowerCap? Module

71V35761S183PFGI

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 183MHZ 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 4.5Mb (128K x 36)
• Memory Interface: Parallel
• Clock Frequency: 183MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.3ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

Package: 100-LQFP

IS65C256AL-25TLA3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 256KBIT 25NS 28TSOP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 256Kb (32K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 28-TSSOP (0.465", 11.80mm Width)
• Supplier Device Package: 28-TSOP I

Package: 28-TSSOP (0.465", 11.80mm Width)

IS42S16100H-7BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 143MHZ 60BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 16Mb (1M x 16)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.5ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-TFBGA
• Supplier Device Package: 60-TFBGA (6.4x10.1)

Package: 60-TFBGA

CAV25128VE-GT3

ON Semiconductor

IC EEPROM 128KBIT 10MHZ 8SOIC

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 128Kb (16K x 8)
• Memory Interface: SPI
• Clock Frequency: 10MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

25AA160B-I/P

Microchip Technology

IC EEPROM 16KBIT 10MHZ 8DIP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 16Kb (2K x 8)
• Memory Interface: SPI
• Clock Frequency: 10MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-PDIP

Package: 8-DIP (0.300", 7.62mm)

24LC024T-I/MNY

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8TDFN

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 2Kb (256 x 8)
• Memory Interface: I2C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: 900ns
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-WFDFN Exposed Pad
• Supplier Device Package: 8-TDFN (2x3)

Package: 8-WFDFN Exposed Pad

MT40A256M16GE-083E AAT:B

Micron Technology Inc.

IC DRAM 4G PARALLEL 1.2GHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 4Gb (256M x 16)
• Memory Interface: Parallel
• Clock Frequency: 1.2GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.26 V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-FBGA (14x9)

Package: 96-TFBGA

S29JL032J70TFI213

Cypress Semiconductor Corp

IC FLASH 32M PARALLEL 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 32Mb (4M x 8, 2M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP

Package: 48-TFSOP (0.724", 18.40mm Width)

IS62WV2568EBLL-45TLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 2M PARALLEL 32STSOP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 2Mb (256K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 45ns
• Access Time: 45ns
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 32-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 32-TSOP I (8x18.4)

Package: 32-TFSOP (0.724", 18.40mm Width)

IS42S32400F-7B-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 128M PARALLEL 90TFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 128Mb (4M x 32)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

Package: 90-TFBGA

MT53D4DARN-DC TR

Micron Technology Inc.

SPECIAL/CUSTOM LPDDR4

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

MT53D512M32D2NP-053 WT ES:D TR

Micron Technology Inc.

IC DRAM 16G 1866MHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 16Gb (512M x 32)
• Memory Interface: -
• Clock Frequency: 1866MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

MTFC32GAPALNA-AIT TR

Micron Technology Inc.

IC FLASH 256G MMC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 256Gb (32G x 8)
• Memory Interface: MMC
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

7008L20JGI

IDT, Integrated Device Technology Inc

IC SRAM 512K PARALLEL 84PLCC

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Asynchronous
• Memory Size: 512Kb (64K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 20ns
• Access Time: 20ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 84-LCC (J-Lead)
• Supplier Device Package: 84-PLCC (29.21x29.21)

Package: 84-LCC (J-Lead)

MT53B512M32D2GZ-062 WT ES:B

Micron Technology Inc.

IC DRAM 16G 1600MHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 16Gb (512M x 32)
• Memory Interface: -
• Clock Frequency: 1600MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Package: -

S25FL128LAGMFI003

Cypress Semiconductor Corp

IC FLASH 128M SPI 133MHZ 16SOIC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (16M x 8)
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

Package: 16-SOIC (0.295", 7.50mm Width)

BR93A86RFVT-WME2

Rohm Semiconductor

MEMORY EEPROM

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 16Kb (1K x 16)
• Memory Interface: SPI
• Clock Frequency: 2MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 2.5V ~ 5.5V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP-B

Package: 8-TSSOP (0.173", 4.40mm Width)