Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE GEN PURP 600V 15A TO220
|
Package: TO-220-2 |
Stock131,976 |
|
600V | 15A | 2.4V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 19ns | 25µA @ 600V | - | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 35A DO5
|
Package: DO-203AB, DO-5, Stud |
Stock4,960 |
|
600V | 35A | 1.4V @ 110A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 600V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE MODULE 600V 500A LP4
|
Package: LP4 |
Stock6,000 |
|
600V | 500A | 1.8V @ 500A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 2.5mA @ 600V | - | Chassis Mount | LP4 | LP4 | - |
||
Microsemi Corporation |
DIODE SCHOTTKY 1.2KV 99A
|
Package: TO-247-2 |
Stock6,864 |
|
1200V | 99A (DC) | 1.8V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 600µA @ 1200V | 2100pF @ 0V, 1MHz | Through Hole | TO-247-2 | TO-247 | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 4A B-MELF
|
Package: SQ-MELF, B |
Stock6,648 |
|
- | 4A (DC) | 1V @ 200mA | Standard Recovery >500ns, > 200mA (Io) | 3µs | 1nA @ 125V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1A AXIAL
|
Package: A, Axial |
Stock12,732 |
|
400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 35pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 225V 400MA DO35
|
Package: DO-204AH, DO-35, Axial |
Stock18,312 |
|
225V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 225V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 200MA DO213AA
|
Package: DO-213AA (Glass) |
Stock5,664 |
|
50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Surface Mount | DO-213AA (Glass) | DO-213AA | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200MA DO35
|
Package: SQ-MELF, B |
Stock14,616 |
|
- | 200mA (DC) | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 1nA @ 125V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 3A AXIAL
|
Package: B, Axial |
Stock13,104 |
|
600V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 225V 200MA DO35
|
Package: DO-204AH, DO-35, Axial |
Stock4,064 |
|
225V | 200mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 25nA @ 225V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 3A AXIAL
|
Package: B, Axial |
Stock16,176 |
|
100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 300MA DO204AH
|
Package: DO-204AH, DO-35, Axial |
Stock10,272 |
|
50V | 300mA | 1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 300MA DO204AH
|
Package: DO-204AH, DO-35, Axial |
Stock17,220 |
|
75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 1A D5A
|
Package: SQ-MELF, A |
Stock18,864 |
|
150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 1A AXIAL
|
Package: A, Axial |
Stock15,240 |
|
150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 25A DO4
|
Package: DO-203AA, DO-4, Stud |
Stock6,504 |
|
100V | 25A | 950mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 20µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 5A 30V TOPHAT
|
Package: Axial |
Stock2,040,000 |
|
30V | 5A | 370mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 30V | - | Through Hole | Axial | Axial | -65°C ~ 125°C |
||
Microsemi Corporation |
DIODE GEN PURP 80V DO35
|
Package: DO-204AH, DO-35, Axial |
Stock14,886 |
|
80V | - | 1.1V @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 100nA @ 75V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 70V 33MA DO35
|
Package: DO-204AH, DO-35, Axial |
Stock16,716 |
|
70V | 33mA | 410mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 50V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 45V 1A DO204AL
|
Package: DO-204AL, DO-41, Axial |
Stock18,816 |
|
45V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | 70pF @ 5V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1.75A D5B
|
Package: SQ-MELF, E |
Stock15,072 |
|
200V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 2µA @ 200V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 3A AXIAL
|
Package: B, Axial |
Stock22,008 |
|
600V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 2µA @ 600V | - | Through Hole | B, Axial | - | - |
||
Microsemi Corporation |
DIODE GEN PURP 800V 5A AXIAL
|
Package: B, Axial |
Stock7,656 |
|
800V | 5A | 1.3V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 3A B-MELF
|
Package: SQ-MELF, B |
Stock23,988 |
|
150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 660V 1.2A A-MELF
|
Package: SQ-MELF, A |
Stock7,884 |
|
660V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 660V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 440V 1.2A A-MELF
|
Package: SQ-MELF, A |
Stock8,076 |
|
440V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 440V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 1A AXIAL
|
Package: A, Axial |
Stock18,348 |
|
150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1A D5A
|
Package: SQ-MELF, A |
Stock19,086 |
|
200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 70V 33MA DO213AA
|
Package: DO-213AA |
Stock4,512 |
|
70V | 33mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 100V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 150°C |