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STMicroelectronics Products - Diodes - Rectifiers - Single

Records 937
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Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
STTH810DI
STMicroelectronics

DIODE GEN PURP 1KV 8A TO220AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220Ins
  • Operating Temperature - Junction: 175°C (Max)
Package: TO-220-3
Stock20,460
1000V
8A
2V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
85ns
5µA @ 1000V
-
Through Hole
TO-220-3
TO-220Ins
175°C (Max)
hot STTH15S12D
STMicroelectronics

DIODE GEN PURP 1.2KV 15A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 3.1V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 175°C (Max)
Package: TO-220-2
Stock8,916
1200V
15A
3.1V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
10µA @ 1200V
-
Through Hole
TO-220-2
TO-220AC
175°C (Max)
hot STTH512D
STMicroelectronics

DIODE GEN PURP 1.2KV 5A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 175°C (Max)
Package: TO-220-2
Stock5,344
1200V
5A
2.2V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
95ns
5µA @ 1200V
-
Through Hole
TO-220-2
TO-220AC
175°C (Max)
hot STTH8L06D
STMicroelectronics

DIODE GEN PURP 600V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 105ns
  • Current - Reverse Leakage @ Vr: 8µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 175°C (Max)
Package: TO-220-2
Stock44,880
600V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
105ns
8µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
175°C (Max)
STPS30M60ST
STMicroelectronics

DIODE SCHOTTKY 60V 30A TO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 590mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 165µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: 150°C (Max)
Package: TO-220-3
Stock6,312
60V
30A
590mV @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
165µA @ 60V
-
Through Hole
TO-220-3
TO-220AB
150°C (Max)
hot STTH1512G
STMicroelectronics

DIODE GEN PURP 1.2KV 15A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 105ns
  • Current - Reverse Leakage @ Vr: 15µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: 175°C (Max)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock8,592
1200V
15A
2.1V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
105ns
15µA @ 1200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
175°C (Max)
hot STPS10L25D
STMicroelectronics

DIODE SCHOTTKY 25V 10A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 25V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 460mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 25V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 150°C (Max)
Package: TO-220-2
Stock408,528
25V
10A
460mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 25V
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
STPSC20H12GY-TR
STMicroelectronics

DIODE SCHOTTKY 1.2KV 20A D2PAK

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 20A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 120µA @ 1200V
  • Capacitance @ Vr, F: 1650pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 175°C
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock2,112
1200V
20A
1.5V @ 20A
No Recovery Time > 500mA (Io)
0ns
120µA @ 1200V
1650pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 175°C
STPSC10H12GY-TR
STMicroelectronics

DIODE SCHOTTKY 1.2KV 10A D2PAK

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 60µA @ 1200V
  • Capacitance @ Vr, F: 725pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 175°C
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock4,464
1200V
10A
1.5V @ 10A
No Recovery Time > 500mA (Io)
0ns
60µA @ 1200V
725pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 175°C
hot STTH8006W
STMicroelectronics

DIODE GEN PURP 600V 80A DO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 80A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 80A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 105ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-247-2 (Straight Leads)
  • Supplier Device Package: DO-247
  • Operating Temperature - Junction: 175°C (Max)
Package: DO-247-2 (Straight Leads)
Stock3,968
600V
80A
1.6V @ 80A
Fast Recovery =< 500ns, > 200mA (Io)
105ns
50µA @ 600V
-
Through Hole
DO-247-2 (Straight Leads)
DO-247
175°C (Max)
STPSC10H065G-TR
STMicroelectronics

DIODE SILICON 650V 10A D2PAK

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 100µA @ 650V
  • Capacitance @ Vr, F: 480pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 175°C
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock7,568
650V
10A
1.75V @ 10A
No Recovery Time > 500mA (Io)
0ns
100µA @ 650V
480pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 175°C
STTH3002PI
STMicroelectronics

DIODE GEN PURP 200V 30A DOP3I

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 20µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DOP3I-2 Insulated (Straight Leads)
  • Supplier Device Package: DOP3I
  • Operating Temperature - Junction: 175°C (Max)
Package: DOP3I-2 Insulated (Straight Leads)
Stock13,944
200V
30A
1.05V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
20µA @ 200V
-
Through Hole
DOP3I-2 Insulated (Straight Leads)
DOP3I
175°C (Max)
STPSC12H065DY
STMicroelectronics

DIODE SCHOTTKY 650V 12A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 120µA @ 650V
  • Capacitance @ Vr, F: 600pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 175°C
Package: TO-220-2
Stock7,464
650V
12A
1.75V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
120µA @ 650V
600pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
hot SPV1001N30
STMicroelectronics

DIODE GEN PURP 30V 12.5A 8PQFN

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 12.5A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 5A
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-PQFN (5x6)
  • Operating Temperature - Junction: -45°C ~ 150°C
Package: 8-PowerVDFN
Stock43,572
30V
12.5A
850mV @ 5A
-
-
1µA @ 30V
-
Surface Mount
8-PowerVDFN
8-PQFN (5x6)
-45°C ~ 150°C
STTH50W06SW
STMicroelectronics

DIODE GEN PURP 600V 50A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 2.4V @ 50A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: 175°C (Max)
Package: TO-247-3
Stock6,816
600V
50A
2.4V @ 50A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
50µA @ 600V
-
Through Hole
TO-247-3
TO-247
175°C (Max)
STPSC12C065DY
STMicroelectronics

DIODE SCHOTTKY 650V 12A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 120µA @ 650V
  • Capacitance @ Vr, F: 530pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 175°C
Package: TO-220-2
Stock9,792
650V
12A
1.75V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
120µA @ 650V
530pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
hot STTH8T06DI
STMicroelectronics

DIODE GEN PURP 600V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2.95V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Insulated, TO-220AC
  • Supplier Device Package: TO-220AC ins
  • Operating Temperature - Junction: -40°C ~ 175°C
Package: TO-220-2 Insulated, TO-220AC
Stock4,880
600V
8A
2.95V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 600V
-
Through Hole
TO-220-2 Insulated, TO-220AC
TO-220AC ins
-40°C ~ 175°C
STPSC10H065DY
STMicroelectronics

DIODE SCHOTTKY 650V 10A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 650V
  • Capacitance @ Vr, F: 480pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 175°C
Package: TO-220-2
Stock7,116
650V
10A
1.75V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 650V
480pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
hot STTH30S06W
STMicroelectronics

DIODE GEN PURP 600V 30A DO247-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 3.6V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-247-2 (Straight Leads)
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 175°C
Package: DO-247-2 (Straight Leads)
Stock7,740
600V
30A
3.6V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
50µA @ 600V
-
Through Hole
DO-247-2 (Straight Leads)
-
-40°C ~ 175°C
STPSC806G-TR
STMicroelectronics

DIODE SCHOTTKY 600V 8A D2PAK

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: 450pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 175°C
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock2,416
600V
8A
1.7V @ 8A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
450pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 175°C
STPSC10H065DI
STMicroelectronics

DIODE SCHOTTKY 650V 10A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Insulated, TO-220AC
  • Supplier Device Package: TO-220AC ins
  • Operating Temperature - Junction: -40°C ~ 175°C
Package: TO-220-2 Insulated, TO-220AC
Stock15,492
650V
10A
1.75V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 650V
-
Through Hole
TO-220-2 Insulated, TO-220AC
TO-220AC ins
-40°C ~ 175°C
hot STPSC806D
STMicroelectronics

DIODE SCHOTTKY 600V 8A TO220AC

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: 450pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 175°C
Package: TO-220-2
Stock71,268
600V
8A
1.7V @ 8A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
450pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
hot STTH3002W
STMicroelectronics

DIODE GEN PURP 200V 30A DO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 20µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-247-2 (Straight Leads)
  • Supplier Device Package: DO-247
  • Operating Temperature - Junction: 175°C (Max)
Package: DO-247-2 (Straight Leads)
Stock4,832
200V
30A
1.05V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
20µA @ 200V
-
Through Hole
DO-247-2 (Straight Leads)
DO-247
175°C (Max)
STTH30R04WY
STMicroelectronics

DIODE GEN PURP 400V 30A DO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 15µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-247-2 (Straight Leads)
  • Supplier Device Package: DO-247
  • Operating Temperature - Junction: -40°C ~ 175°C
Package: DO-247-2 (Straight Leads)
Stock15,624
400V
30A
1.55V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
15µA @ 400V
-
Through Hole
DO-247-2 (Straight Leads)
DO-247
-40°C ~ 175°C
STPSC6H12B-TR1
STMicroelectronics

DIODE SCHOTTKY 1.2KV 6A DPAK

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 400µA @ 1200V
  • Capacitance @ Vr, F: 330pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Operating Temperature - Junction: -40°C ~ 175°C
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock7,152
1200V
6A
1.9V @ 6A
No Recovery Time > 500mA (Io)
0ns
400µA @ 1200V
330pF @ 0V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-40°C ~ 175°C
hot STTH30L06G-TR
STMicroelectronics

DIODE GEN PURP 600V 30A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 90ns
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: 175°C (Max)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock8,844
600V
30A
1.55V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
90ns
25µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
175°C (Max)
hot STPSC10H065D
STMicroelectronics

DIODE SCHOTTKY 650V 10A TO220AC

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 100µA @ 650V
  • Capacitance @ Vr, F: 480pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 175°C
Package: TO-220-2
Stock5,616
650V
10A
1.75V @ 10A
No Recovery Time > 500mA (Io)
0ns
100µA @ 650V
480pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
STTH30R04G-TR
STMicroelectronics

DIODE GEN PURP 400V 30A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 15µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 175°C
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock7,648
400V
30A
1.45V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
15µA @ 400V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 175°C
STPSC8H065DI
STMicroelectronics

DIODE SCHOTTKY 650V 8A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 80µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Insulated, TO-220AC
  • Supplier Device Package: TO-220AC ins
  • Operating Temperature - Junction: -40°C ~ 175°C
Package: TO-220-2 Insulated, TO-220AC
Stock15,936
650V
8A
1.75V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
80µA @ 650V
-
Through Hole
TO-220-2 Insulated, TO-220AC
TO-220AC ins
-40°C ~ 175°C
hot STTH30R02DJF-TR
STMicroelectronics

DIODE GEN 200V 30A POWERFLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerFlat? (5x6)
  • Operating Temperature - Junction: 175°C (Max)
Package: 8-PowerVDFN
Stock6,000
200V
30A
1.15V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
-
Surface Mount
8-PowerVDFN
PowerFlat? (5x6)
175°C (Max)