Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 38.8A TO247
|
Package: TO-247-3 |
Stock6,084 |
|
MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 3.7V @ 1.9mA | 110nC @ 10V | 4100pF @ 300V | ±30V | Super Junction | 270W (Tc) | 65 mOhm @ 19.4A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 30.8A TO247
|
Package: TO-247-3 |
Stock5,952 |
|
MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | ±30V | Super Junction | 230W (Tc) | 88 mOhm @ 15.4A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 35A TO-247
|
Package: TO-247-3 |
Stock6,240 |
|
MOSFET (Metal Oxide) | 650V | 35A (Ta) | 10V | 3.5V @ 2.1mA | 100nC @ 10V | 4100pF @ 300V | ±30V | - | 270W (Tc) | 80 mOhm @ 17.5A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-220
|
Package: TO-220-3 |
Stock6,992 |
|
MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 3.5V @ 1.5mA | 65nC @ 10V | 3000pF @ 300V | ±30V | Super Junction | 230W (Tc) | 88 mOhm @ 9.4A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 214A TO220SIS
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock6,708 |
|
MOSFET (Metal Oxide) | 80V | 100A (Tc) | 10V | 4V @ 1mA | 130nC @ 10V | 9000pF @ 40V | ±20V | - | 45W (Tc) | 3.2 mOhm @ 50A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock6,400 |
|
MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | ±30V | - | 40W (Tc) | 300 mOhm @ 6.9A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock4,848 |
|
MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | ±30V | - | 40W (Tc) | 250 mOhm @ 6.9A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 9.7A TO-220
|
Package: TO-220-3 |
Stock6,960 |
|
MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | ±30V | Super Junction | 100W (Tc) | 380 mOhm @ 4.9A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 65A TO-220
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock6,216 |
|
MOSFET (Metal Oxide) | 100V | 65A (Tc) | 10V | 4V @ 1mA | 81nC @ 10V | 5400pF @ 50V | ±20V | - | 45W (Tc) | 4.8 mOhm @ 32.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 100A TO-220
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock5,296 |
|
MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 4V @ 1mA | 140nC @ 10V | 10500pF @ 30V | ±20V | - | 45W (Tc) | 2.7 mOhm @ 50A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 900V TO-3PN
|
Package: TO-3P-3, SC-65-3 |
Stock6,252 |
|
MOSFET (Metal Oxide) | 900V | 7A (Ta) | 10V | 4V @ 700µA | 32nC @ 10V | 1350pF @ 25V | ±30V | - | 200W (Tc) | 2 Ohm @ 3.5A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 60V 100A TO-220
|
Package: TO-220-3 |
Stock7,656 |
|
MOSFET (Metal Oxide) | 60V | 100A (Ta) | 10V | 4V @ 1mA | 140nC @ 10V | 10500pF @ 30V | ±20V | - | 255W (Tc) | 2.3 mOhm @ 50A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 800V TO220SIS
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock4,784 |
|
MOSFET (Metal Oxide) | 800V | 10A (Ta) | 10V | 4V @ 1mA | 46nC @ 10V | 2000pF @ 25V | ±30V | - | 50W (Tc) | 1 Ohm @ 5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 900V TO220SIS
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock6,912 |
|
MOSFET (Metal Oxide) | 900V | 9A (Ta) | 10V | 4V @ 900µA | 46nC @ 10V | 2000pF @ 25V | ±30V | - | 50W (Tc) | 1.3 Ohm @ 4.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 5.4A TO-220SIS
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock6,108 |
|
MOSFET (Metal Oxide) | 600V | 5.4A (Ta) | 10V | 3.7V @ 270µA | 10.5nC @ 10V | 380pF @ 300V | ±30V | Super Junction | 30W (Tc) | 900 mOhm @ 2.7A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 120V 56A TO-220
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock6,432 |
|
MOSFET (Metal Oxide) | 120V | 56A (Tc) | 10V | 4V @ 1mA | 69nC @ 10V | 4200pF @ 60V | ±20V | - | 45W (Tc) | 7.5 mOhm @ 28A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 11.1A TO-220
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock6,992 |
|
MOSFET (Metal Oxide) | 650V | 11.1A (Ta) | 10V | 3.5V @ 450µA | 25nC @ 10V | 890pF @ 300V | ±30V | - | 35W (Tc) | 390 mOhm @ 5.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V TO220SIS
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock5,760 |
|
MOSFET (Metal Oxide) | 500V | 12A (Ta) | 10V | 4V @ 1.2mA | 40nC @ 10V | 1300pF @ 25V | ±30V | - | 45W (Tc) | 520 mOhm @ 6A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 800V TO220SIS
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock5,856 |
|
MOSFET (Metal Oxide) | 800V | 6A (Ta) | 10V | 4V @ 600µA | 32nC @ 10V | 1350pF @ 25V | ±30V | - | 45W (Tc) | 1.7 Ohm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 40A TO-220
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock9,228 |
|
MOSFET (Metal Oxide) | 100V | 40A (Tc) | 10V | 4V @ 500µA | 49nC @ 10V | 3000pF @ 50V | ±20V | - | 35W (Tc) | 8.2 mOhm @ 20A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 100V 90A TO220
|
Package: TO-220-3 |
Stock7,380 |
|
MOSFET (Metal Oxide) | 100V | 90A (Tc) | 10V | 4V @ 500µA | 49nC @ 10V | 3000pF @ 50V | ±20V | - | 126W (Tc) | 8.2 mOhm @ 20A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 900V TO220SIS
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock6,912 |
|
MOSFET (Metal Oxide) | 900V | 7A (Ta) | 10V | 4V @ 700µA | 32nC @ 10V | 1350pF @ 25V | ±30V | - | 45W (Tc) | 2 Ohm @ 3.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 5.4A IPAK
|
Package: TO-251-3 Stub Leads, IPak |
Stock6,024 |
|
MOSFET (Metal Oxide) | 600V | 5.4A (Ta) | 10V | 3.7V @ 270µA | 10.5nC @ 10V | 380pF @ 300V | ±30V | Super Junction | 60W (Tc) | 900 mOhm @ 2.7A, 10V | 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 75A TO-220
|
Package: TO-220-3 |
Stock6,000 |
|
MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 4V @ 500µA | 38nC @ 10V | 2600pF @ 50V | ±20V | - | 103W (Tc) | 9.5 mOhm @ 17A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 120V 60A TO-220
|
Package: TO-220-3 |
Stock11,508 |
|
MOSFET (Metal Oxide) | 120V | 60A (Tc) | 10V | 4V @ 500µA | 34nC @ 10V | 2000pF @ 60V | ±20V | - | 98W (Tc) | 13.8 mOhm @ 16A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 100V 52A TO220
|
Package: TO-220-3 |
Stock10,188 |
|
MOSFET (Metal Oxide) | 100V | 52A (Tc) | 10V | 4V @ 300µA | 28nC @ 10V | 1800pF @ 50V | ±20V | - | 72W (Tc) | 13.8 mOhm @ 11A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 60V 58A TO-220
|
Package: TO-220-3 |
Stock7,776 |
|
MOSFET (Metal Oxide) | 60V | 58A (Ta) | 10V | 4V @ 500µA | 46nC @ 10V | 3400pF @ 30V | ±20V | - | 110W (Tc) | 5.4 mOhm @ 29A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 30A TO-220
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock6,544 |
|
MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 4V @ 200µA | 16nC @ 10V | 1050pF @ 30V | ±20V | - | 25W (Tc) | 15 mOhm @ 15A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V TO220SIS
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock5,648 |
|
MOSFET (Metal Oxide) | 600V | 10A (Ta) | 10V | 4V @ 1mA | 40nC @ 10V | 1300pF @ 25V | ±30V | - | 45W (Tc) | 750 mOhm @ 5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 7A TO-220SIS
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock6,264 |
|
MOSFET (Metal Oxide) | 600V | 7A (Ta) | 10V | 4.5V @ 350µA | 16nC @ 10V | 490pF @ 300V | ±30V | - | 30W (Tc) | 650 mOhm @ 3.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |