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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 3A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-214AB, SMC |
Stock6,752 |
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30V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 3A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-214AB, SMC |
Stock6,016 |
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20V | 3A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AB, SMC |
Stock5,984 |
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200V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 5µA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AB, SMC |
Stock2,240 |
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150V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AB, SMC |
Stock3,120 |
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100V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AB, SMC |
Stock5,472 |
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200V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 5µA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AB, SMC |
Stock2,096 |
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150V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AB, SMC |
Stock4,992 |
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100V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 1A DO213AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 60V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-213AB, MELF |
Stock3,024 |
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60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 80pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | DO-213AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 1A DO213AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 50V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-213AB, MELF |
Stock4,976 |
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50V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | 80pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | DO-213AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE FRED
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 930mV @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 2µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock2,544 |
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200V | 4A | 930mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 200V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE FRED
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 930mV @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 2µA @ 4V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock4,400 |
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100V | 4A | 930mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 4V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A TO277A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 58ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock4,288 |
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600V | 6A | 1.3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 58ns | 5µA @ 600V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A TO277A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock2,032 |
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600V | 6A | 1.8V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 600V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 720mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 80µA @ 45V
- Capacitance @ Vr, F: 270pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock369,600 |
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45V | 10A | 720mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80µA @ 45V | 270pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5µs
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-201AD, Axial |
Stock3,792 |
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800V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 800V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5µs
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-201AD, Axial |
Stock7,456 |
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1000V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 1000V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5µs
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-201AD, Axial |
Stock8,508 |
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600V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5µs
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-201AD, Axial |
Stock7,232 |
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400V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5µs
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-201AD, Axial |
Stock4,112 |
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200V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5µs
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-201AD, Axial |
Stock2,448 |
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100V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5µs
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-201AD, Axial |
Stock3,520 |
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50V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 2.5A DO201
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 2.5A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-201AD, Axial |
Stock7,248 |
|
1000V | 2.5A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5µs
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-201AD, Axial |
Stock6,128 |
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1000V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 1000V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5µs
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-201AD, Axial |
Stock4,976 |
|
800V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 800V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5µs
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: DO-201AD, Axial |
Stock3,056 |
|
600V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5µs
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-201AD, Axial |
Stock3,280 |
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200V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5µs
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-201AD, Axial |
Stock3,312 |
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100V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |