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Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

Records 3,365
Page  6/113
Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot SUM110N10-09-E3
Vishay Siliconix

MOSFET N-CH 100V 110A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock73,464
MOSFET (Metal Oxide)
100V
110A (Tc)
10V
4V @ 250µA
160nC @ 10V
6700pF @ 25V
±20V
-
3.75W (Ta), 375W (Tc)
9.5 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2Pak)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot SUM110P06-07L-E3
Vishay Siliconix

MOSFET P-CH 60V 110A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 345nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.9 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock103,392
MOSFET (Metal Oxide)
60V
110A (Tc)
4.5V, 10V
3V @ 250µA
345nC @ 10V
11400pF @ 25V
±20V
-
3.75W (Ta), 375W (Tc)
6.9 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2Pak)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot SUM55P06-19L-E3
Vishay Siliconix

MOSFET P-CH 60V 55A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock236,628
MOSFET (Metal Oxide)
60V
55A (Tc)
4.5V, 10V
3V @ 250µA
115nC @ 10V
3500pF @ 25V
±20V
-
3.75W (Ta), 125W (Tc)
19 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2Pak)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRF540PBF
Vishay Siliconix

MOSFET N-CH 100V 28A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Package: TO-220-3
Stock5,792
MOSFET (Metal Oxide)
100V
28A (Tc)
10V
4V @ 250µA
72nC @ 10V
1700pF @ 25V
±20V
-
150W (Tc)
77 mOhm @ 17A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot IRFZ44PBF
Vishay Siliconix

MOSFET N-CH 60V 50A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Package: TO-220-3
Stock28,920
MOSFET (Metal Oxide)
60V
50A (Tc)
10V
4V @ 250µA
67nC @ 10V
1900pF @ 25V
±20V
-
150W (Tc)
28 mOhm @ 31A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot IRF740PBF
Vishay Siliconix

MOSFET N-CH 400V 10A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Package: TO-220-3
Stock19,632
MOSFET (Metal Oxide)
400V
10A (Tc)
10V
4V @ 250µA
63nC @ 10V
1400pF @ 25V
±20V
-
125W (Tc)
550 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot SI7192DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 60A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Package: PowerPAK? SO-8
Stock789,828
MOSFET (Metal Oxide)
30V
60A (Tc)
4.5V, 10V
2.5V @ 250µA
135nC @ 10V
5800pF @ 15V
±20V
-
6.25W (Ta), 104W (Tc)
1.9 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SI7174DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 75V 60A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2770pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Package: PowerPAK? SO-8
Stock301,332
MOSFET (Metal Oxide)
75V
60A (Tc)
10V
4.5V @ 250µA
72nC @ 10V
2770pF @ 40V
±20V
-
6.25W (Ta), 104W (Tc)
7 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot IRF640PBF
Vishay Siliconix

MOSFET N-CH 200V 18A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Package: TO-220-3
Stock98,748
MOSFET (Metal Oxide)
200V
18A (Tc)
10V
4V @ 250µA
70nC @ 10V
1300pF @ 25V
±20V
-
125W (Tc)
180 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot IRF840PBF
Vishay Siliconix

MOSFET N-CH 500V 8A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Package: TO-220-3
Stock613,332
MOSFET (Metal Oxide)
500V
8A (Tc)
10V
4V @ 250µA
63nC @ 10V
1300pF @ 25V
±20V
-
125W (Tc)
850 mOhm @ 4.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot SUM60N10-17-E3
Vishay Siliconix

MOSFET N-CH 100V 60A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock41,424
MOSFET (Metal Oxide)
100V
60A (Tc)
6V, 10V
4V @ 250µA
100nC @ 10V
4300pF @ 25V
±20V
-
3.75W (Ta), 150W (Tc)
16.5 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2Pak)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot SI7790DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 50A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Package: PowerPAK? SO-8
Stock65,400
MOSFET (Metal Oxide)
40V
50A (Tc)
4.5V, 10V
2.5V @ 250µA
95nC @ 10V
4200pF @ 20V
±25V
-
5.2W (Ta), 69W (Tc)
4.5 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SUD50P04-15-E3
Vishay Siliconix

MOSFET P-CH 40V 50A TO252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock129,060
MOSFET (Metal Oxide)
40V
50A (Tc)
4.5V, 10V
1V @ 250µA (Min)
130nC @ 10V
5400pF @ 25V
±20V
-
3W (Ta), 100W (Tc)
15 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
SQJ461EP-T1_GE3
Vishay Siliconix

MOSFET P-CH 60V 30A

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4710pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 14.4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Package: PowerPAK? SO-8
Stock94,866
MOSFET (Metal Oxide)
60V
30A (Tc)
4.5V, 10V
2.5V @ 250µA
140nC @ 10V
4710pF @ 30V
±20V
-
83W (Tc)
16 mOhm @ 14.4A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SUD50N06-09L-E3
Vishay Siliconix

MOSFET N-CH 60V 50A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock60,264
MOSFET (Metal Oxide)
60V
50A (Tc)
4.5V, 10V
3V @ 250µA
70nC @ 10V
2650pF @ 25V
±20V
-
3W (Ta), 136W (Tc)
9.3 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SUD19N20-90-E3
Vishay Siliconix

MOSFET N-CH 200V 19A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock493,668
MOSFET (Metal Oxide)
200V
19A (Tc)
6V, 10V
4V @ 250µA
51nC @ 10V
1800pF @ 25V
±20V
-
3W (Ta), 136W (Tc)
90 mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SIR880DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 80V 60A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Package: PowerPAK? SO-8
Stock608,088
MOSFET (Metal Oxide)
80V
60A (Tc)
4.5V, 10V
2.8V @ 250µA
74nC @ 10V
2440pF @ 40V
±20V
-
6.25W (Ta), 104W (Tc)
5.9 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SI7489DP-T1-E3
Vishay Siliconix

MOSFET P-CH 100V 28A PPAK SO-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 41 mOhm @ 7.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Package: PowerPAK? SO-8
Stock31,044
MOSFET (Metal Oxide)
100V
28A (Tc)
4.5V, 10V
3V @ 250µA
160nC @ 10V
4600pF @ 50V
±20V
-
5.2W (Ta), 83W (Tc)
41 mOhm @ 7.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SUD50P08-25L-E3
Vishay Siliconix

MOSFET P-CH 80V 50A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 25.2 mOhm @ 12.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock450,000
MOSFET (Metal Oxide)
80V
50A (Tc)
4.5V, 10V
3V @ 250µA
160nC @ 10V
4700pF @ 40V
±20V
-
8.3W (Ta), 136W (Tc)
25.2 mOhm @ 12.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SI7489DP-T1-GE3
Vishay Siliconix

MOSFET P-CH 100V 28A PPAK SO-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 41 mOhm @ 7.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Package: PowerPAK? SO-8
Stock9,444
MOSFET (Metal Oxide)
100V
28A (Tc)
4.5V, 10V
3V @ 250µA
160nC @ 10V
4600pF @ 50V
±20V
-
5.2W (Ta), 83W (Tc)
41 mOhm @ 7.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SI4472DY-T1-E3
Vishay Siliconix

MOSFET N-CH 150V 7.7A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 5.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Package: 8-SOIC (0.154", 3.90mm Width)
Stock95,160
MOSFET (Metal Oxide)
150V
7.7A (Tc)
8V, 10V
4.5V @ 250µA
43nC @ 10V
1735pF @ 50V
±20V
-
3.1W (Ta), 5.9W (Tc)
45 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SUD40N08-16-E3
Vishay Siliconix

MOSFET N-CH 80V 40A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock247,848
MOSFET (Metal Oxide)
80V
40A (Tc)
10V
4V @ 250µA
60nC @ 10V
1960pF @ 25V
±20V
-
3W (Ta), 136W (Tc)
16 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
SIR882DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 60A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1930pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Package: PowerPAK? SO-8
Stock114,066
MOSFET (Metal Oxide)
100V
60A (Tc)
4.5V, 10V
2.8V @ 250µA
58nC @ 10V
1930pF @ 50V
±20V
-
5.4W (Ta), 83W (Tc)
8.7 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
SI7463DP-T1-GE3
Vishay Siliconix

MOSFET P-CH 40V 11A PPAK SO-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 18.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Package: PowerPAK? SO-8
Stock231,228
MOSFET (Metal Oxide)
40V
11A (Ta)
4.5V, 10V
3V @ 250µA
140nC @ 10V
-
±20V
-
1.9W (Ta)
9.2 mOhm @ 18.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SI7164DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 60A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.25 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Package: PowerPAK? SO-8
Stock113,784
MOSFET (Metal Oxide)
60V
60A (Tc)
10V
4.5V @ 250µA
75nC @ 10V
2830pF @ 30V
±20V
-
6.25W (Ta), 104W (Tc)
6.25 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
SI7141DP-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 60A PPAK SO-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14300pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Package: PowerPAK? SO-8
Stock59,358
MOSFET (Metal Oxide)
20V
60A (Tc)
4.5V, 10V
2.3V @ 250µA
400nC @ 10V
14300pF @ 10V
±20V
-
6.25W (Ta), 104W (Tc)
1.9 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SI7145DP-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 60A PPAK SO-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 413nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15660pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Package: PowerPAK? SO-8
Stock6,204
MOSFET (Metal Oxide)
30V
60A (Tc)
4.5V, 10V
2.3V @ 250µA
413nC @ 10V
15660pF @ 15V
±20V
-
6.25W (Ta), 104W (Tc)
2.6 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SI7135DP-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 60A PPAK SO-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8650pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Package: PowerPAK? SO-8
Stock12,012
MOSFET (Metal Oxide)
30V
60A (Tc)
4.5V, 10V
3V @ 250µA
250nC @ 10V
8650pF @ 15V
±20V
-
6.25W (Ta), 104W (Tc)
3.9 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
SI4434DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 250V 2.1A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta)
  • Rds On (Max) @ Id, Vgs: 155 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Package: 8-SOIC (0.154", 3.90mm Width)
Stock42,714
MOSFET (Metal Oxide)
250V
2.1A (Ta)
6V, 10V
4V @ 250µA
50nC @ 10V
-
±20V
-
1.56W (Ta)
155 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SI7178DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 60A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2870pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Package: PowerPAK? SO-8
Stock768,012
MOSFET (Metal Oxide)
100V
60A (Tc)
10V
4.5V @ 250µA
72nC @ 10V
2870pF @ 50V
±20V
-
6.25W (Ta), 104W (Tc)
14 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8